CN213242577U - Three-in-one coating equipment for mass production type high-efficiency photovoltaic cell - Google Patents
Three-in-one coating equipment for mass production type high-efficiency photovoltaic cell Download PDFInfo
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- CN213242577U CN213242577U CN202021710165.5U CN202021710165U CN213242577U CN 213242577 U CN213242577 U CN 213242577U CN 202021710165 U CN202021710165 U CN 202021710165U CN 213242577 U CN213242577 U CN 213242577U
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Abstract
The utility model discloses a trinity coating equipment of high-efficient photovoltaic cell of volume production type relates to TOPcon battery back passivation field, and the passive film structure that TOPCON battery of photovoltaic enterprise chooseed for use is Al2O3 SiNx bilayer membrane or SiO2 Al2O3 SiNx three-layer membrane structure, and above-mentioned three-layer membrane structure needs three above equipment to make usually, the utility model discloses a coating equipment just can accomplish above-mentioned coating film, and the design has the boiler tube, and the flange is installed at the boiler tube both ends, and all gas all gets into in the quartz capsule through the inlet port on the flange to sealed quartz capsule is intraductal with the external world, has the cooling water can circulate inside the flange, gives the flange cooling, avoids rubber seal to melt, evenly distributed inlet port all around the flange guarantees that the air supply lets in evenly. The coating process is simpler, the production cost is reduced, multiple turnover is not needed in the coating process, the pollution risk is reduced, the process stability is higher, the oxidation time is shortened, and the productivity is greatly improved.
Description
Technical Field
The utility model relates to a TOPcon battery back passivation field especially relates to the trinity coating equipment of the high-efficient photovoltaic cell of volume production type.
Background
The photovoltaic power generation technology is developed rapidly in recent years as an environment-friendly new energy technology, and particularly, the crystalline silicon battery technology is the most mature and has the highest market share. The efficiency of the crystal silicon battery with the traditional structure does not basically improve the space, the crystal silicon battery with a new structure and higher efficiency is urgently needed to be developed, the crystal silicon battery with the potential and the highest process feasibility is an N-type TOPCON battery, the efficiency can be improved by more than 1% compared with a conventional aluminum back field battery and the current PERC battery TOPCON battery, and only partial equipment needs to be added on the basis of the original production line. For a high-efficiency battery, the surface passivation requirement of a crystalline silicon wafer is extremely high, and the passivation means that the recombination of photon-generated carriers on the surface is reduced by depositing a layer of film on the surface of crystalline silicon, forming a bond with a surface silicon dangling bond and forming a built-in electric field by rich fixed charges in the film. The conventional cell passivation film is generally a silicon nitride film, the passivation film structure selected by TOPCON cells of various photovoltaic enterprises at present is an Al2O3/SiNx double-layer film or a SiO2/Al2O3/SiNx three-layer film structure, wherein the SiO2 and silicon crystal lattice matching property is higher, the chemical passivation effect is better, Al2O3 is rich in high-concentration negative charges and has a good field effect physical passivation effect, and the SiNx film on the outermost layer has the functions of increasing light absorption and surface protection. The passivation effect of the SiO2/Al2O3/SiNx three-layer film is better, the cell efficiency is higher, but the current process for preparing the three-layer film is complex and can be completed by more than two kinds of equipment, including a thermal oxidation furnace and Al2O3/SiNx two-in-one coating equipment, so that the equipment investment cost is greatly increased, the pollution risk in the turnover process of a silicon wafer is reduced, and the productivity is low due to too long time of a thermal oxidation process.
There are mainly the following three problems;
1. three-layer film can be completed by more than two devices, and the investment of the main device and the device at the upper and lower material ends is high.
2. The pollution risk of the silicon wafer during the turnover is increased, and the process stability is low.
3. The process flow is complex, the process time is long, and the productivity is low.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the shortcoming that exists among the prior art, provided the trinity coating equipment of high-efficient photovoltaic cell of volume production type, through the cooperation of flange structural design and quartz capsule, realize including the quick thermal oxidation deposition first layer SiO2 membrane of O3H 2O vapour, PEALD deposition Al2O3 and last step PECVD deposition SiNx all accomplish in same quartz capsule. The first layer of silicon oxide film of preparation can accelerate silicon oxide growth rate through wet ozone thermal oxidation, avoids the silicon chip surface damage that plasma bombardment leads to in follow-up two layers of aluminium oxide membrane deposition process, has strengthened the passivation effect, trinity filming equipment has greatly promoted the productivity, has reduced manufacturing cost, has promoted battery efficiency.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
three-in-one coating equipment of high-efficient photovoltaic cell of volume production type, including boiler tube structure, special gas source system, temperature control system the boiler tube structure is including quartz capsule, flange, fixed plate, furnace gate, fixed plate, flange, furnace gate are all installed in proper order to the quartz capsule both ends, a plurality of inlet ports have been seted up all around to the flange, inlet port and the inside intercommunication of quartz capsule.
According to a further technical scheme, the flange is further provided with a cooling water inlet and a cooling water outlet in the circumferential direction, and the cooling water inlet is communicated with the cooling water outlet through a cooling water annular channel.
According to the technical scheme, the cooling water annular channel is arranged inside the flange, and cold water is introduced through the cooling water inlet and flows through the cooling water annular channel and then flows out through the cooling water outlet, so that the flange is cooled conveniently, and the flange rubber sealing ring is prevented from melting.
According to a further technical scheme, heating devices are uniformly distributed on the periphery of the quartz tube and controlled by a temperature control system.
According to the further technical scheme, the source supply system is communicated with the flange near air inlet hole through the special gas pipeline, so that the gas source can be uniformly introduced into the quartz tube, and the film deposition is ensured to be more uniform.
According to the further technical scheme, the special gas pipelines are provided with butterfly valves and mass flow meters so as to control the gas source inlet amount.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the deposition of the three layers of films is finished in a quartz tube, so that the process is simpler and the production cost is reduced.
2. The special gas source system avoids the conventional temperature reduction of more than 800 ℃ to more than 400 ℃ from the second Al2O3 deposition process temperature by adopting the ozone/steam for medium-low temperature oxidation at the temperature of less than 500 ℃, shortens the oxidation process time and greatly improves the productivity.
3. The three-in-one coating process does not need to be carried over for many times, and the process stability for reducing pollution risks is higher.
Drawings
FIG. 1 is a schematic structural view of the mass-production type high-efficiency three-in-one photovoltaic cell coating equipment of the present invention;
FIG. 2 is a sectional view of the mass-production type high-efficiency three-in-one photovoltaic cell coating equipment of the present invention;
FIG. 3 is a schematic view of a flange of the mass-production type high-efficiency three-in-one photovoltaic cell coating equipment of the present invention;
FIG. 4 is a schematic view of the internal structure of a flange of the mass-production type high-efficiency three-in-one photovoltaic cell coating equipment of the present invention;
FIG. 5 is a schematic structural view of a furnace door of the mass production type high-efficiency photovoltaic cell three-in-one coating device;
figure 6 is the utility model discloses the trinity coating equipment fixed plate structure schematic diagram of the high-efficient photovoltaic cell of volume production type.
In the figure: 1 fixed plate, 2 flanges, 4 furnace doors, 5 quartz tubes, 6 air inlets, 7 cooling water annular channels, 8 cooling water inlets and 8-1 cooling water outlets.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Referring to fig. 1-6, trinity coating equipment of high-efficient photovoltaic cell of volume production type, including furnace tube structure, special gas source system, temperature control system, the furnace tube structure is including quartz capsule 5, flange 2, fixed plate 1, furnace gate 4, fixed plate 1, flange 2, furnace gate 4 are all installed in proper order at quartz capsule 5 both ends, a plurality of inlet ports 6 have been seted up all around to flange 2, inlet port 6 and the inside switch-on of quartz capsule 5, flange 2 still are equipped with cooling water inlet 8, cooling water outlet 8-1 on the circumferencial direction, cooling water inlet 8 is through cooling water annular channel 7 and cooling water outlet 8-1 intercommunication, cooling water annular channel 7 sets up inside flange 2, lets in cold water through cooling water inlet 8 and flows through cooling water outlet 8-1 behind cooling water annular channel 7, is convenient for the flange 2 cooling, avoid 2 rubber seal of flange to melt, quartz capsule 5 the heating device that evenly has arranged all around, heating device passes through temperature control system control, special gas source system passes through special gas pipeline and flange inlet port intercommunication, makes in the gas source can be even lets in quartz capsule 5, ensures that the film deposit is more even, butterfly valve and mass flow meter are all installed in special gas pipeline in order to control the gas source volume of letting in.
In summary, the principle of depositing the SiO2 film in the first step is realized by feeding a silicon wafer into a quartz tube through a quartz boat, introducing ozone and water vapor into the quartz tube through a flange air inlet hole by a special gas pipeline, wherein the process temperature is within 500 ℃, heating devices are uniformly distributed around the quartz tube, a preferred temperature control system matched with the heating devices adopts a cascade control system, the silicon oxide film prepared by the method is different from the process temperature above 800 ℃ of the conventional thermal oxidation, the cooling time to the process temperature in the second step is greatly shortened, the principle of depositing Al2O3 in the second step is realized, the special gas source system is communicated through the flange air inlet hole of the special gas pipeline, the interior of the flange is in a vacuum state, and the air inlet holes are uniformly distributed and dispersed, so that a gas source can be uniformly introduced into the quartz tube, and the film deposition is ensured to be more uniform. The air source pipelines are all provided with butterfly valves and mass flow meters so as to control the air source input quantity.
Realize the third step deposit SiNx membrane, pass through required SiH4 and NH3, N2 gas through special air supply, the flange is inside to be the vacuum form, and evenly distributed is the inlet port of dispersed form to make the air supply can be even let in the quartz capsule, ensure that the film deposit is more even, butterfly valve and mass flow meter are all installed in each air supply pipeline in order to control the air supply volume of letting in.
The second three-layer film deposition principle is that glow discharge is generated on a cathode of a process cavity (namely a sample is placed in a graphite boat) by using low-temperature plasma under low pressure, the sample is heated to a preset temperature by using the glow discharge (or a heating element is additionally added), then a proper amount of process gas is introduced, and the gases are subjected to a series of chemical reactions and plasma reactions to finally form a solid film on the surface of the sample.
In the reaction process, the reaction gas enters the quartz tube from the gas inlet hole, is gradually diffused to the surface of the sample, and is decomposed into electrons, ions, active groups and the like under the action of an electric field excited by the radio frequency source. The decomposition products are subjected to chemical reaction to generate initial components and side reactants for forming a film, the products are adsorbed to the surface of a sample in the form of chemical bonds to generate crystal nuclei of a solid film, the crystal nuclei gradually grow into islands, and the islands continuously grow into a continuous film. During the film growth process, various byproducts are gradually separated from the surface of the film and are discharged from the outlet under the action of a vacuum pump. The flange plays an important role in the whole process, all gas enters the quartz tube through the gas inlet holes in the flange, and seals the quartz tube and the outside, so that cooling water needs to circulate inside the flange to cool the flange and avoid melting of a rubber sealing ring, and the gas inlet holes are uniformly distributed on the periphery of the flange to ensure that a gas source is uniformly introduced.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (6)
1. Three-in-one coating equipment of high-efficient photovoltaic cell of volume production type, its characterized in that, including boiler tube structure, special gas source system, temperature control system the boiler tube structure is including quartz capsule, flange, fixed plate, furnace gate, fixed plate, flange, furnace gate are all installed in proper order to the quartz capsule both ends, a plurality of inlet ports have been seted up all around to the flange, inlet port and the inside intercommunication of quartz capsule.
2. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells according to claim 1, wherein the flange is further provided with a cooling water inlet and a cooling water outlet in the circumferential direction, and the cooling water inlet is communicated with the cooling water outlet through a cooling water annular channel.
3. The three-in-one coating equipment for the mass production type high-efficiency photovoltaic cells according to claim 2, wherein the cooling water annular channel is arranged inside the flange, and cold water is introduced through the cooling water inlet and flows through the cooling water annular channel and then flows out through the cooling water outlet, so that the flange is cooled conveniently, and the flange rubber sealing ring is prevented from melting.
4. The three-in-one coating equipment for mass production type high-efficiency photovoltaic cells according to claim 1, wherein heating devices are uniformly distributed around the quartz tube, and the heating devices are controlled by a temperature control system.
5. The three-in-one coating apparatus for mass production type high efficiency photovoltaic cells according to claim 1, wherein the special gas source system is communicated with the flange gas inlet hole through a special gas pipeline, so that the gas source can be uniformly introduced into the quartz tube, and the deposition of the thin film is ensured to be more uniform.
6. The three-in-one coating equipment for the mass production type high-efficiency photovoltaic cells according to claim 5, wherein the special gas pipelines are provided with butterfly valves and mass flow meters to control the introduction amount of a gas source.
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