JPS62193278A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS62193278A JPS62193278A JP61036015A JP3601586A JPS62193278A JP S62193278 A JPS62193278 A JP S62193278A JP 61036015 A JP61036015 A JP 61036015A JP 3601586 A JP3601586 A JP 3601586A JP S62193278 A JPS62193278 A JP S62193278A
- Authority
- JP
- Japan
- Prior art keywords
- well
- solid
- grooves
- substrate
- sidewalls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000003384 imaging method Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 boron ions Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、インターライン型固体撮像装置に関する。[Detailed description of the invention] Industrial applications The present invention relates to an interline solid-state imaging device.
従来の技術
最近の実用化している固体撮像装置は、総合特待性から
Ｐウェル インターライン型固体撮像装置が主流となっ
ている。BACKGROUND OF THE INVENTION P-well interline type solid-state imaging devices have become mainstream among solid-state imaging devices that have recently been put into practical use due to their comprehensive benefits.
第２図はインターライン型固体撮像装置の１画素部分の
構造を示す断面図である。２１はｎ型シリコン基板Ｓｉ
、２２はＰウェル、２５はチャンネルストッパ、２４は
ｎ型拡散層で、Ｐウェル２２とのＰｎ接合によるフォト
ダイオードＰＤ部を形成している。また、２６は垂直Ｃ
ＯＤ （電荷転送素子）部を形成する埋め込みチャンネ
ル領域、２７はポリシリコンゲート電極、２８はアルミ
等の遮光層で、このような単位構造を１画素として、固
体撮像素子は、約６０朋に約２０〜３０万個の画素が集
積されている。また９は電源を示す。FIG. 2 is a cross-sectional view showing the structure of one pixel portion of an interline solid-state imaging device. 21 is an n-type silicon substrate Si
, 22 is a P-well, 25 is a channel stopper, and 24 is an n-type diffusion layer, which forms a photodiode PD section by a Pn junction with the P-well 22. Also, 26 is vertical C
A buried channel region forming an OD (charge transfer device) section, 27 a polysilicon gate electrode, and 28 a light-shielding layer made of aluminum or the like.With such a unit structure as one pixel, a solid-state image sensor has approximately 60 pixels. 200,000 to 300,000 pixels are integrated. Further, 9 indicates a power source.
基本的動作は、Ｐウェル２とｎ型シリコン基板２１との
間に、電源９により逆バイアスを印加して、ＰＤ部とな
るｎ型拡散層２４下のＰウェル２２を完全空乏化するこ
とによりプルーミング機能を有する。）（例えば、〔ア
イニスニスシーシーダイジェスト オブ テクニカル
ペーパーズ〕（Ｉ Ｓ Ｓｅｃ Ｄｉｇｅｓｔ ｏｆ
Ｔｅｃｈｎｉｃａｌ Ｐａｐｅｒｓ）。The basic operation is to apply a reverse bias from the power supply 9 between the P well 2 and the n-type silicon substrate 21, and completely deplete the P well 22 under the n-type diffusion layer 24, which will become the PD section. It has a pluming function. ) (for example,
Papers] (I S Sec Digest of
Technical Papers).
ｐｐｌ θａ 、 １９８２ ）
発明が解決しようとする問題点
このような構造の固体撮像装置では、高集積が進み単位
画素が縮小化するとｖＣＣＤ（垂直Ｃ０Ｄ）のチャンネ
ル幅が制限を受け、取り扱い電荷量が低下するという問
題点と、スミア低減には、限界があるという欠点があっ
た。ppl θa, 1982) Problems to be Solved by the Invention In solid-state imaging devices with such a structure, as the unit pixel becomes smaller due to higher integration, the channel width of vCCD (vertical C0D) is restricted, and the amount of charge handled becomes smaller. There was a problem that the amount of smear decreased, and that there was a limit to smear reduction.
本発明は上述の従来技術の欠点に鑑みて成されたもので
、ＶＣＣＤの断面構造を変えることで、単位画素の縮小
化およびスミア低減が図れる固体撮像装置を提供するこ
とを目的としたものである。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and aims to provide a solid-state imaging device that can reduce unit pixel size and reduce smear by changing the cross-sectional structure of a VCCD. be.
問題点を解決するための手段
上記の従来技術の問題点を解決するため本発明の固体撮
像装置は、垂直信号転送部（ｖｃｃｎ）を、基板をエツ
チングした２つの溝の向い合う側面およびそれらを結ぶ
主表面に形成するものである。Means for Solving the Problems In order to solve the problems of the prior art described above, the solid-state imaging device of the present invention has a vertical signal transfer section (VCCN) formed by forming a vertical signal transfer section (VCCN) on the opposite sides of two grooves etched in the substrate, and on the opposite sides of two grooves etched in the substrate. It is formed on the main surface to be tied.
作用
本発明は上記した構成をとることにより、平面的なりｃ
ｃｎの専有面積を減少させ、かつ有効面積増大が図れ、
しかも、構造上、ＶＣＣＤへの直接入射光が減少するた
めスミアの低減される固体撮像装置となる。Function The present invention has the above-described configuration, so that it is possible to
Reduce the exclusive area of CN and increase the effective area,
Moreover, since the amount of light directly incident on the VCCD is reduced due to its structure, the solid-state imaging device has reduced smear.
実施例
第１図は本発明の一実施例を示す断面図であり、１はｎ
型Ｓｉ基板、２はＰウェル、３はＰ＋ウェル、４はＰＤ
となるｎ型拡散層、６はチャンネルストッパ、６はＣＯ
Ｄの埋め込みチャンネル領域、７はポリシリコンゲート
電極、８はアルミ遮光層である。Embodiment FIG. 1 is a sectional view showing an embodiment of the present invention, where 1 is n
type Si substrate, 2 is P well, 3 is P+ well, 4 is PD
n-type diffusion layer, 6 is a channel stopper, 6 is CO
D is a buried channel region, 7 is a polysilicon gate electrode, and 8 is an aluminum light-shielding layer.
この構造の固体撮像装置は次のように形成される。はじ
めに、ｎ型Ｓｉ基板１にボロンをイオン注入、ドライブ
インによってＰウェル２を形成する。次に、選択的にポ
ロンをイオン注入、ドライブインによってＰ＋ウェル３
を形成し、さらに、ｎ型拡散層４、チャンネルストッパ
６を形成後、ＶＣＣＤとなる領域の両側に２つの溝を少
なくとも、ｎ型拡散層４よりも深く形成する。そして、
２つの溝の向い合う側壁とそれらを結ぶ表面に、ＣＯＤ
の埋め込みチャンネル領域６を形成した後、ゲート酸化
膜を形成して、ポリシリコンゲート電極７を形成する。A solid-state imaging device having this structure is formed as follows. First, boron ions are implanted into an n-type Si substrate 1 and a P well 2 is formed by drive-in. Next, selectively implant poron into the P+ well 3 by drive-in.
After forming the n-type diffusion layer 4 and the channel stopper 6, at least two grooves are formed deeper than the n-type diffusion layer 4 on both sides of the region that will become the VCCD. and,
COD is applied to the opposing side walls of the two grooves and the surface connecting them.
After forming a buried channel region 6, a gate oxide film is formed and a polysilicon gate electrode 7 is formed.
後は、層間絶縁膜を成長させ、アルミじゃ光層８を形成
すると完成する。After that, an interlayer insulating film is grown and an aluminum reflective layer 8 is formed to complete the process.
なお、上述の実施例では、ｎ型拡散層４は、溝形成前に
行なったが、ポリシリコンゲート電極形成後でも良い。In the above embodiment, the n-type diffusion layer 4 was formed before forming the groove, but it may be formed after forming the polysilicon gate electrode.
以上一実施例を説明したが、上述から明らかなように本
発明の固体撮像装置は、ｖｃｃｎは側壁をも利用して形
成されているため、単位面積当りの有効面積は増大して
おり、ｖＧＧＤの空乏層は、アルミじゃ光層８の端から
空間的にへだたっているため、スミアの低減効果も大き
くなる。One embodiment has been described above, but as is clear from the above, in the solid-state imaging device of the present invention, since the vccn is formed also using the side wall, the effective area per unit area is increased, and the vGGD Since the depletion layer is spatially separated from the edge of the aluminum reflective layer 8, the effect of reducing smear is also increased.
発明の詳細
な説明して明らかなように本発明は、垂直ＣＯＤを溝の
側面にも形成することで、有効面積の増大を平面積を増
大させずに行なえ、かつ、垂直ＣＯＤを受光部より空間
的に離すように２つの溝に囲まれた配置にすることによ
り、スミアの低減も図れるなど、大きな効果が得られる
。As is clear from the detailed description of the invention, the present invention is capable of increasing the effective area without increasing the planar area by forming the vertical COD on the side surface of the groove, and also allows the vertical COD to be formed from the light receiving part. By arranging the grooves so as to be surrounded by two grooves that are spatially separated from each other, great effects such as reduction of smear can be obtained.
第１図は本発明の固体撮像装置の一実施例を示す断面図
、第２図は従来例を示すインタライン型の固体撮像装置
の断面図である。
１・・・・・・ｎ型Ｓｉ基板、２・・・・・・Ｐウェル
、３・・・・・・Ｐ＋ウェル、４・・・・・・ｎ型拡散
層、６・・・・・・チャンネルストッパ、６・・・・・
・ＣＣＤの埋め込みチャンネル領域、７・・・・・・ポ
リシリコンゲート電極、８・・・・・・アルミしや光層
。FIG. 1 is a sectional view showing an embodiment of the solid-state imaging device of the present invention, and FIG. 2 is a sectional view of an interline type solid-state imaging device showing a conventional example. 1...N-type Si substrate, 2...P-well, 3...P+ well, 4...n-type diffusion layer, 6...・Channel stopper, 6...
・Embedded channel region of CCD, 7...Polysilicon gate electrode, 8...Aluminum film and optical layer.
Claims (2)
され、この領域内に受光部と信号転送部とが二次元的に
配列され、上記信号転送部は、上記反対導電型の領域に
形成された溝の側面と主表面に形成されていることを特
徴とする固体撮像装置。(1) A region of an opposite conductivity type is formed on the main surface of a substrate of one conductivity type, a light receiving section and a signal transfer section are arranged two-dimensionally within this region, and the signal transfer section is of the opposite conductivity type. A solid-state imaging device characterized in that a groove is formed on a side surface and a main surface of a groove formed in a region.
部が、上記２つの溝の向い合う側壁とそれらを結ぶ表面
に形成されていることを特徴とする特許請求の範囲第１
項記載の固体撮像装置。(2) Grooves are formed at both ends of the signal transfer section, and the effective transfer section is formed on the opposing side walls of the two grooves and the surface connecting them.
The solid-state imaging device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61036015A JPS62193278A (en) | 1986-02-20 | 1986-02-20 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61036015A JPS62193278A (en) | 1986-02-20 | 1986-02-20 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193278A true JPS62193278A (en) | 1987-08-25 |
Family
ID=12457919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61036015A Pending JPS62193278A (en) | 1986-02-20 | 1986-02-20 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193278A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005123538A (en) * | 2003-10-20 | 2005-05-12 | Sony Corp | Solid imaging device and its manufacturing method |
-
1986
- 1986-02-20 JP JP61036015A patent/JPS62193278A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005123538A (en) * | 2003-10-20 | 2005-05-12 | Sony Corp | Solid imaging device and its manufacturing method |
| JP4496753B2 (en) * | 2003-10-20 | 2010-07-07 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
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