JPS62190360U - - Google Patents
Info
- Publication number
- JPS62190360U JPS62190360U JP7789086U JP7789086U JPS62190360U JP S62190360 U JPS62190360 U JP S62190360U JP 7789086 U JP7789086 U JP 7789086U JP 7789086 U JP7789086 U JP 7789086U JP S62190360 U JPS62190360 U JP S62190360U
- Authority
- JP
- Japan
- Prior art keywords
- barrier metal
- substrate
- conductivity type
- region
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示し、ａは電極板
を除いての平面図、ｂは断面図である。
１：シリコン基板、２：バリア金属、４：ガー
ドリング、５：電極、６：共通電極板。
FIG. 1 shows an embodiment of the present invention, in which a is a plan view excluding the electrode plate, and b is a sectional view. 1: silicon substrate, 2: barrier metal, 4: guard ring, 5: electrode, 6: common electrode plate.
Claims (1)
割されたバリア金属が接触し、該基板の各バリア
金属領域によつて接続された面の周縁に他導電形
の層からなるガードリングを有し、各バリア金属
領域が接触する基板領域に対する逆方向特性不良
のものを除いてそれぞれ接続体を介して共通電極
板に接続されたことを特徴とするシヨツトキー・
バリア・ダイオード。 A barrier metal divided into a plurality of regions is in contact with the surface of a semiconductor substrate of one conductivity type, and a guard ring made of a layer of another conductivity type is provided at the periphery of the surface connected by each barrier metal region of the substrate. The shot key is characterized in that each barrier metal region is connected to a common electrode plate through a connecting body, except for those with poor reverse characteristics with respect to the contacting substrate region.
barrier diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7789086U JPH0539637Y2 (en) | 1986-05-23 | 1986-05-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7789086U JPH0539637Y2 (en) | 1986-05-23 | 1986-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190360U true JPS62190360U (en) | 1987-12-03 |
| JPH0539637Y2 JPH0539637Y2 (en) | 1993-10-07 |
Family
ID=30926323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7789086U Expired - Lifetime JPH0539637Y2 (en) | 1986-05-23 | 1986-05-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539637Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286991A (en) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | Light-emitting device and manufacturing method thereof |
| WO2009088081A1 (en) * | 2008-01-09 | 2009-07-16 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1986
- 1986-05-23 JP JP7789086U patent/JPH0539637Y2/ja not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286991A (en) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | Light-emitting device and manufacturing method thereof |
| WO2009088081A1 (en) * | 2008-01-09 | 2009-07-16 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0539637Y2 (en) | 1993-10-07 |