JPS6218730A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To simplify a manufacturing process by disposing a seeding unit at the position corresponding to a scribing line of a device to form a laterally epitaxial film, forming an element and then dicing to divide into chips. CONSTITUTION:An Si oxide film 2 is formed on the surface of a semiconductor substrate 1, and the hole 3 of the film 2 is formed at the portion corresponding to a scribing line. A seeding unit 4 is formed in the hole 3. Then, an Si is epitaxially grown as a seed of the unit 4. The epitaxial growth is advanced longitudinally and laterally from the unit 4, the growths from the adjacent units 4 meet one another to form a laterally epitaxially grown film 5 on the film 2. Thereafter, an element separating region 6 and a field insulating film 7 are formed on the film 5, and the element is formed. The thus constructed device is diced along the scribing line 13 disposed with the units 4 to separate to chips. According to said method, the etching of the units 4 can be eliminated.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a semiconductor device.
(Silicon On In5ulator) Device manufacturing method.

[Conventional technology]

Conventionally, this type of SOI device has been manufactured using lateral epitaxial growth (ELO).
1Lateral Overgrowth) process has been proposed.

The outline of this process is as follows.

First, an opening is formed in a silicon oxide film provided on a semiconductor substrate, and seeding is performed through the opening by the CVD method. Thereafter, silicon is grown vertically up to the height of the silicon oxide film, and along with this vertical growth, silicon is grown horizontally on the silicon oxide film. This lateral growth is performed until the grown layers from each adjacent seeding meet each other to form a silicon epitaxial interconnect film, ie, an ELO film.

Next, elements such as transistors are formed on this ELO film by a normal impurity diffusion process, and then the ELO film at a position corresponding to the seeding portion is etched, and the etched surface is oxidized to form an insulating film. Then, this insulating film is filled with polysilicon to form an isolation region, and a glass film or the like is applied to correct the protrusion in this part and flatten the whole, and then a metal wiring layer is formed. The SOI device is constructed by metallizing.

[Problem that the invention seeks to solve]

In the above-mentioned conventional SOI device, the seeding portion is arranged corresponding to the position of the isolation region for each element or element group, so the seeding portion is etched and insulated before metallization. The process of
A subsequent planarization step must be carried out, which poses problems of complicating the process, lengthening the time, and increasing costs. In particular, a thick ELO film is required to form a device with a relatively high breakdown voltage, but removing this thick ELO film requires a large amount of time.

Incidentally, it is now possible to obtain a high-quality ELO film with a relatively large area, and it is not necessarily required to perform seeding on a device-by-device basis or a device-group basis.

[Means for solving problems]

In the semiconductor device manufacturing method of the present invention, the seeding portion is placed at a position corresponding to the scribe line area of the device in order to simplify the manufacturing process by omitting the etching of the seeding portion and the subsequent planarization step. After forming an ELO film and forming a predetermined element, the scribe line region is diced to form the chips separately.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

1 to 4 show the manufacturing method of the present invention, and are sectional views of the manufacturing process.

First, as shown in FIG. 1, a silicon oxide film 2 of a predetermined thickness is formed on the surface of a semiconductor substrate 1 made of silicon, etc., and the silicon oxide film 2 is deposited on a portion corresponding to the chip size, that is, a portion corresponding to a scribe line. An opening 3 in the membrane 2 is formed.

Then, N- silicon is grown in this opening 3 by the CVD method to form a seeding part 4. This seeding portion 4 is formed to be approximately equal in thickness to the silicon oxide film 2 .

Next, as shown in FIG. 2, silicon is epitaxially grown using the seeding portion 4 as a nucleus. Epitaxial growth progresses in the vertical and horizontal directions from the seeding part 4, and as the growth from adjacent seeding parts 4 meet each other, the epitaxial growth layer (N-), which is a continuous film of silicon, that is, the ELo film 5 is formed. It is formed on the silicon oxide film 2. Since this ELO film 5 is grown laterally, it does not become polycrystalline.

Then, an element isolation region 6 and a field insulating film 7 are formed on the ELO film 5 by a selective oxidation method or a groove-type isolation method that has been proposed in recent years, and insulation isolation is performed in each element or element group. At the same time, elements are formed using a normal impurity layer diffusion technique, and metal wiring for electrically connecting these elements is formed using a metallization technique. In Fig. 3, the device is configured as a bipolar element, in which 8 is an N3 buried layer, 9 is a P'' base, 10 is an N4 collector, 11 is an N'' emitter, and 12 is the respective electrode. It is.

The device thus constructed is diced along the scribe line 13 where the seeding section 4 is located, and separated into chips as shown in FIG. 4. By this dicing, the seeding portion 4 that has already completed its mission is cut and removed. It is clear that P/W can be set before or after dicing.

In the device constructed by the above manufacturing method, the seeding part 4 is located on the scribe line 13 and is removed by dicing. It is possible to obtain a device with good flatness and high insulation isolation while eliminating the need for flattening the entire surface of the device. Therefore, it is possible to manufacture a high-quality SOI device, and by omitting these treatments, it is possible to simplify the manufacturing process, shorten process time, and reduce costs.

Here, in the above embodiment, an example was explained in which a bipolar element was constructed, but it goes without saying that the present invention can be similarly applied to an MO3 type element.

〔Effect of the invention〕

As explained above, in the present invention, an ELO film is formed by arranging a seeding portion at a position corresponding to a scribe line of a device, and after forming an element on this ELO film, a seeding portion is placed at a position corresponding to a scribe line of a device. Since it is divided into chips by dicing, it is possible to omit the steps of etching away the seeding part and flattening the device surface including the seeding part, resulting in high-quality Sol devices. This has the effect of enabling manufacturing, simplifying the process, shortening the time, and reducing costs.

[Brief explanation of drawings]

1 to 4 are cross-sectional views showing the method of manufacturing a semiconductor device according to the present invention in order of steps. Engineering...Semiconductor substrate, 2...Silicon oxide film, 3...
・Opening part, 4... Seeding part, 5... ELO film, 6... Element isolation region, 7... Field insulating film,
8...N'' buried layer, 9...P'' base, 10...
N+ collector, 11...N'' emitter, 12... electrode, 13... scribe line.

Claims (1)

[Claims] 1. A process of opening an insulating film formed on the surface of the semiconductor substrate at a position corresponding to a scribe line of the semiconductor substrate and forming a seeding part in this opening, and a lateral epitaxial growth method using this seeding part as a core. a step of forming an epitaxially grown layer on the insulating film, a step of forming a circuit element on the epitaxially grown layer, and a step of dividing the semiconductor into chips by dicing along the scribe line. Method of manufacturing the device.