JPS6218706A - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS6218706A JPS6218706A JP15866485A JP15866485A JPS6218706A JP S6218706 A JPS6218706 A JP S6218706A JP 15866485 A JP15866485 A JP 15866485A JP 15866485 A JP15866485 A JP 15866485A JP S6218706 A JPS6218706 A JP S6218706A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- crystal
- source material
- liquid
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866485A JPS6218706A (ja) | 1985-07-17 | 1985-07-17 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866485A JPS6218706A (ja) | 1985-07-17 | 1985-07-17 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6218706A true JPS6218706A (ja) | 1987-01-27 |
| JPH0219967B2 JPH0219967B2 (cg-RX-API-DMAC7.html) | 1990-05-07 |
Family
ID=15676655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15866485A Granted JPS6218706A (ja) | 1985-07-17 | 1985-07-17 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6218706A (cg-RX-API-DMAC7.html) |
-
1985
- 1985-07-17 JP JP15866485A patent/JPS6218706A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0219967B2 (cg-RX-API-DMAC7.html) | 1990-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5021224A (en) | Apparatus for growing multicomponents compound semiconductor crystals | |
| US3632431A (en) | Method of crystallizing a binary semiconductor compound | |
| JP2017506206A (ja) | マルチゾーン可変電力密度ヒーター、そのヒーターを含む装置及びそのヒーターを使用する方法 | |
| JPS6218706A (ja) | 結晶成長方法 | |
| US3765959A (en) | Method for the liquid phase epitaxial growth of semiconductor crystals | |
| US20020005158A1 (en) | Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus | |
| JPS6218707A (ja) | 結晶成長方法 | |
| JPS6218705A (ja) | 結晶成長方法 | |
| JPS60264391A (ja) | 結晶製造装置 | |
| Golubev et al. | Liquid phase electroepitaxy of III–V semiconductors | |
| JPS5860534A (ja) | 半導体結晶の製造方法 | |
| JPS6065799A (ja) | 結晶成長方法 | |
| JPH0431385A (ja) | 結晶成長装置 | |
| JPH02184592A (ja) | 結晶成長方法 | |
| JPH0312382A (ja) | 結晶成長装置 | |
| JPS61274316A (ja) | 結晶成長法 | |
| JPH0264087A (ja) | 半導体結晶成長装置 | |
| JPS63144191A (ja) | 化合物半導体単結晶の製造方法と装置 | |
| JPH02222529A (ja) | 結晶成長装置 | |
| JPH03104114A (ja) | 結晶成長装置 | |
| JPH026383A (ja) | 半導体結晶成長装置 | |
| Żytkiewicz et al. | On the High Compositional Uniformity of Thick GaAlAs Layers Grown by Liquid Phase Electroepitaxy | |
| JPH02111690A (ja) | 化合物半導体結晶成長方法及びそれを実施する装置 | |
| JPH0139999B2 (cg-RX-API-DMAC7.html) | ||
| JPH03270127A (ja) | 半導体結晶成長装置 |