JPS62186422U - - Google Patents
Info
- Publication number
- JPS62186422U JPS62186422U JP7552986U JP7552986U JPS62186422U JP S62186422 U JPS62186422 U JP S62186422U JP 7552986 U JP7552986 U JP 7552986U JP 7552986 U JP7552986 U JP 7552986U JP S62186422 U JPS62186422 U JP S62186422U
- Authority
- JP
- Japan
- Prior art keywords
- cvd apparatus
- light source
- support substrate
- reaction chamber
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
Description
第１図は本考案光ＣＶＤ装置の概略を示す模式
図、第２図は本考案光ＣＶＤ装置の要部を示す正
面図、第３図は本考案装置と従来装置に於ける成
膜速度と反応圧力との関係を示す特性図、である
。
１……反応室、２……照射窓、３……光源、５
……支持基板、７……不活性ガス導入管、９……
導入板、１２……反応ガス導入系、１３……排気
系。
Fig. 1 is a schematic diagram showing the outline of the optical CVD apparatus of the present invention, Fig. 2 is a front view showing the main parts of the optical CVD apparatus of the invention, and Fig. 3 is a diagram showing the film formation speed of the inventive apparatus and the conventional apparatus. FIG. 3 is a characteristic diagram showing the relationship with reaction pressure. 1...Reaction chamber, 2...Irradiation window, 3...Light source, 5
...Support substrate, 7...Inert gas introduction pipe, 9...
Introduction plate, 12... Reaction gas introduction system, 13... Exhaust system.
Claims (1)
された光エネルギにより分解して当該反応室内に
保持された支持基板表面に薄膜を堆積せしめる光
ＣＶＤ装置であつて、上記光源から支持基板に至
る照射光路にほぼ沿つて不活性ガスを供給したこ
とを特徴とする光ＣＶＤ装置。 A photo-CVD apparatus that deposits a thin film on the surface of a support substrate held within the reaction chamber by decomposing a reaction gas introduced into a reaction chamber with light energy irradiated from a light source, the irradiation extending from the light source to the support substrate. An optical CVD apparatus characterized in that an inert gas is supplied substantially along an optical path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7552986U JPS62186422U (en) | 1986-05-20 | 1986-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7552986U JPS62186422U (en) | 1986-05-20 | 1986-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62186422U true JPS62186422U (en) | 1987-11-27 |
Family
ID=30921755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7552986U Pending JPS62186422U (en) | 1986-05-20 | 1986-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62186422U (en) |
-
1986
- 1986-05-20 JP JP7552986U patent/JPS62186422U/ja active Pending
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