JPS62185222A - Magnetic memory body - Google Patents
Magnetic memory bodyInfo
- Publication number
- JPS62185222A JPS62185222A JP2854986A JP2854986A JPS62185222A JP S62185222 A JPS62185222 A JP S62185222A JP 2854986 A JP2854986 A JP 2854986A JP 2854986 A JP2854986 A JP 2854986A JP S62185222 A JPS62185222 A JP S62185222A
- Authority
- JP
- Japan
- Prior art keywords
- coated
- layer
- film
- metal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 150000003839 salts Chemical class 0.000 claims abstract description 11
- 229920006254 polymer film Polymers 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 125000005462 imide group Chemical group 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 31
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 6
- 235000014113 dietary fatty acids Nutrition 0.000 abstract description 5
- 229930195729 fatty acid Natural products 0.000 abstract description 5
- 239000000194 fatty acid Substances 0.000 abstract description 5
- 150000004665 fatty acids Chemical class 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 150000003949 imides Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004962 Polyamide-imide Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229920002312 polyamide-imide Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001096 P alloy Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AVOVSJYQRZMDQJ-KVVVOXFISA-M lithium;(z)-octadec-9-enoate Chemical compound [Li+].CCCCCCCC\C=C/CCCCCCCC([O-])=O AVOVSJYQRZMDQJ-KVVVOXFISA-M 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000013556 antirust agent Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- HGPXWXLYXNVULB-UHFFFAOYSA-M lithium stearate Chemical compound [Li+].CCCCCCCCCCCCCCCCCC([O-])=O HGPXWXLYXNVULB-UHFFFAOYSA-M 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- OBQVOBQZMOXRAL-UHFFFAOYSA-L magnesium;docosanoate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCCCCCC([O-])=O OBQVOBQZMOXRAL-UHFFFAOYSA-L 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HPUJPNOFAQQDQF-UHFFFAOYSA-M potassium;tetracosanoate Chemical compound [K+].CCCCCCCCCCCCCCCCCCCCCCCC([O-])=O HPUJPNOFAQQDQF-UHFFFAOYSA-M 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 spin code method Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁気的記録装置(磁気ディスク装置。[Detailed description of the invention] [Industrial application field] The present invention relates to a magnetic recording device (magnetic disk device).
磁気ドラム装置及び磁気テープ装置等)に用いられる磁
気記憶体(以下、記憶体と呼ぶ)に関し、詳しくは、記
憶体の金属磁性薄膜媒体(以下、金属媒体と呼ぶ)上の
保護膜に関する。The present invention relates to a magnetic storage body (hereinafter referred to as a storage body) used in a magnetic drum device, a magnetic tape device, etc., and specifically relates to a protective film on a metal magnetic thin film medium (hereinafter referred to as a metal medium) of the storage body.
本発明は金属媒体上に酸化物及び窒化物から選ばれる少
なくとも1柚の物質より成る薄膜が第1層として被覆さ
れ、次にAl、Cr、Ti、Ta、Nbから選ばれる少
なくとも1種の金属薄膜が第2層として被覆され、次に
イミド基含有高分子膜が第3層として被覆され、更に少
なくとも脂肪酸とLi、Na、に、Mg、Oaから選ば
れる金属との塩で融点が80℃以上の物質が第4層とし
て被覆せしめた記憶体を提供することにより、該記憶体
と記録再生ヘッド(以下、ヘッドと呼ぶ)との間の摩擦
係数を著るしく低下させ、記憶体の機械的信頼性を高め
、他方、水分等の環境に対する記憶体の耐食性を飛躍的
に向上させたものである。In the present invention, a thin film made of at least one substance selected from oxides and nitrides is coated on a metal medium as a first layer, and then a thin film made of at least one substance selected from Al, Cr, Ti, Ta, and Nb is coated on a metal medium. A thin film is coated as a second layer, then an imide group-containing polymer film is coated as a third layer, and a salt of at least a fatty acid and a metal selected from Li, Na, Mg, and Oa with a melting point of 80 ° C. By providing a storage body coated with the above-mentioned substance as the fourth layer, the coefficient of friction between the storage body and a recording/reproducing head (hereinafter referred to as a head) can be significantly reduced, and the mechanical This improves the physical reliability of the storage medium, and also dramatically improves the corrosion resistance of the storage medium against moisture and other environmental conditions.
金ki4媒体を有する記憶体に於いては、ヘッドとの接
触に耐えるだけの充分な機械的信頼性と金属媒体を力負
環境から守る耐食性を有する保護膜を被覆せしめること
が必須である。In a storage medium having a gold ki4 medium, it is essential to coat the metal medium with a protective film having sufficient mechanical reliability to withstand contact with the head and corrosion resistance to protect the metal medium from a stressful environment.
従来より種々の保詭膜が提案されている。Various protective films have been proposed in the past.
Sin、(ポリケイ酸を含む)やTiNに代表される化
合物被膜は、記憶体に優れた耐食性能を与えるが、潤滑
性に劣り、単独での保護膜では、実用化レベルに達して
いない。又炭素質膜は、ピンホールが多く、その導電性
が良好である事から金々4媒体の耐食性を逆に悪くする
ものである。又BN、MC13,,イミド基含有高分子
体等の固体潤滑膜もピンホールが多いため防食効果が不
充分であった。又上述の被膜被覆記憶体は、ヘッドと記
憶体が接触を繰り返すことにより、両者間の静M擦係数
が増大し、その結果、記憶体回転用スピンドルモーター
が停止するスティッキング現象を起こした。更に2価フ
ェノール等の防錆剤や、高級アルコール、エステル、脂
肪酸等の潤滑剤が提案されているものの、効果のあるも
のが少なく、又効果があっても、長期に渡りその効果を
維持できえなかった。Compound films typified by Sin, (including polysilicic acid), and TiN provide excellent corrosion resistance to memory bodies, but have poor lubricity and have not reached a practical level when used alone as a protective film. Furthermore, the carbonaceous film has many pinholes and has good conductivity, which adversely affects the corrosion resistance of the metal medium. Also, solid lubricant films made of BN, MC13, imide group-containing polymers, etc. had many pinholes, and therefore had insufficient anticorrosion effects. Further, in the above-mentioned film-covered storage body, repeated contact between the head and the storage body increases the static M friction coefficient between the two, resulting in a sticking phenomenon in which the spindle motor for rotating the storage body stops. Furthermore, although anti-rust agents such as dihydric phenols and lubricants such as higher alcohols, esters, and fatty acids have been proposed, there are few that are effective, and even if they are effective, they cannot maintain their effectiveness over a long period of time. I couldn't.
従来の技術では、記憶体とヘッドとの接触による記憶体
とヘッドの物理的劣化及びスティッキング現象、そして
記憶体の金属媒体の耐食性を充分に確保出来ないという
問題点を有していた。Conventional techniques have had problems such as physical deterioration and sticking phenomenon between the storage body and the head due to contact between the storage body and the head, and failure to ensure sufficient corrosion resistance of the metal medium of the storage body.
そこで本発明は上記の問題点を解決するものであり、そ
の目的とするところは、記憶体とヘッドとの間の摩擦係
数を大幅に低減させ、記憶体の機械的信頼性を高めると
ともに、水分等の環境に対する金属媒体の耐食性を飛躍
的に向上させた記憶体を提供するところにある。Therefore, the present invention is intended to solve the above problems, and its purpose is to significantly reduce the coefficient of friction between the storage body and the head, improve the mechanical reliability of the storage body, and reduce moisture content. An object of the present invention is to provide a storage medium in which the corrosion resistance of a metal medium in environments such as the above is dramatically improved.
本発明の記憶体は、基体上に金属媒体を形成した後、A
L、Or 、 Ti 、Ta 、Nbから選ばれる少な
くとも1種の金属薄膜の有無に於いて、酸化物及び窒化
物から選ばれる少なくとも1種の物質より成る薄膜を第
1 Wlとして被覆され、次にA t 、 Cr 、
T i 、 T a 、 N bから選ばれる少なくと
も1種の金属薄膜が第2層として被覆され、次にイミド
基含有高分子膜が第5層として被覆され、更に少なくと
も脂肪酸とLi、Ha、K。In the storage body of the present invention, after forming a metal medium on a base, A
In the presence or absence of at least one metal thin film selected from L, Or, Ti, Ta, and Nb, a thin film made of at least one substance selected from oxides and nitrides is coated as the first Wl, and then At, Cr,
A thin film of at least one metal selected from T i , T a , and N b is coated as a second layer, then an imide group-containing polymer film is coated as a fifth layer, and further a thin film of at least one metal selected from T i , T a , and N b is coated as a fifth layer. .
Mg 、Oaから選ばれる金属との塩で融点が80℃以
上の物質を第4層として被覆せしめたことを特徴とする
。The fourth layer is coated with a salt of a metal selected from Mg and Oa and has a melting point of 80° C. or higher.
金属媒体と酸化物及び窒化物間の金属薄膜は、密着性を
より確かにする目的で被覆し、その膜厚は50〜200
にで充分であり、必須ではない。The thin metal film between the metal medium and the oxide or nitride is coated to ensure better adhesion, and the film thickness is between 50 and 200 mm.
is sufficient and not required.
第1層の酸化物は、5i02 、’I’102 、
Or。The first layer oxides are 5i02, 'I'102,
Or.
0、、Ta、o、、NbO,、A、4tOa等、窒化物
はSi3N4 、’I’iN、’1’a2N、AtN
、OrN等であり、膜厚は200〜800Xである。こ
れらはいずれも、緻密性及び絶縁性に優れることから、
金属媒体を水分等の力負環境から守る特性を有する。0,, Ta, o,, NbO,, A, 4tOa, etc. Nitride is Si3N4, 'I'iN, '1'a2N, AtN
, OrN, etc., and the film thickness is 200 to 800X. All of these have excellent density and insulation properties, so
It has the property of protecting the metal medium from negative environments such as moisture.
第2層の金属M膜は、いずれも金属媒体に較らぺ卑な金
属である事から、記憶体が力負環境に放置された時、金
属媒体が方食するより先に方食し、又理由は不明である
が、第2層の金J14 薄膜が方食しても、記憶体の面
上に力負後の生成物が成長しない特徴を有する。金属薄
膜の膜厚は50〜2ooXが適切である。Since the metal M film of the second layer is a base metal compared to the metal medium, when the storage body is left in a stress-negative environment, it erodes before the metal medium erodes. Although the reason is unknown, it has a characteristic that even if the second layer of gold J14 thin film is etched, no products after stress are grown on the surface of the memory body. The appropriate thickness of the metal thin film is 50 to 200X.
第3層のイミド基含有高分子膜は熱硬化及び熱可塑性の
アミドイミド、イミドアミン等いずれでも、又混合、積
層でも良く、膜厚は100〜500Aである。The imide group-containing polymer film of the third layer may be made of thermosetting or thermoplastic amide-imide, imidoamine, etc., or may be mixed or laminated, and has a film thickness of 100 to 500 Å.
以上の被膜は、真空蒸着法、スパッタリング法、イオン
ブレーティング法等のPVD法、CtVD法や下記の塗
布法のいずれの方法でも形成する事が可能である。The above coating can be formed by any of the following coating methods: PVD methods such as vacuum evaporation, sputtering, and ion blating, CtVD.
第4層の金属塩は、脂肪酸は炭素数が12〜30が良く
、直鎖1分枝、飽和、不飽和の制限はないが、特に直鎖
のものが良好であった。これらの中から融点が80℃以
上の金属塩を用いるが、単独及び混合で用いても良い。In the metal salt of the fourth layer, the fatty acid preferably has 12 to 30 carbon atoms, and is not limited to linear, monobranched, saturated, or unsaturated, but linear ones are particularly good. Among these, metal salts having a melting point of 80° C. or higher are used, but they may be used alone or in combination.
又これらは極性溶媒に溶解し、スピンコード法、スプレ
ー法、等!引き上げ法等の塗布法で被覆するか、真空蒸
着法等の真空成膜法で被覆しても良い、膜厚は50〜2
00Aである。Also, these can be dissolved in polar solvents, spin code method, spray method, etc. It may be coated by a coating method such as a pulling method or by a vacuum film forming method such as a vacuum evaporation method, and the film thickness is 50 to 2
It is 00A.
金属塩の金属元素が上述以外の場合、摩擦係数低減効果
に乏しく、又融点が80℃以下の金属塩は高温下に記憶
体が放置された場合、除々に気化したり、下地層に含浸
してその効果が失なわれる〔作用〕
本発明の上記の構成によれば、金属媒体上に防食効果に
優れた酸化物及び窒化物から選ばれる少なくとも1種の
物質より成る化合物薄膜が被覆されるが該薄膜の膜欠陥
を皆無にすることは不可能である。父上記の化合物薄膜
上にイミド基含有高分子膜を被覆した場合、膜欠陥はか
なり改善されるものの、不充分である。If the metal element in the metal salt is other than those mentioned above, the effect of reducing the coefficient of friction will be poor, and if the metal salt has a melting point of 80°C or lower, if the storage medium is left at high temperatures, it will gradually vaporize or impregnate the underlying layer. [Function] According to the above structure of the present invention, the metal medium is coated with a compound thin film made of at least one substance selected from oxides and nitrides having excellent anticorrosion effects. However, it is impossible to completely eliminate film defects in the thin film. When a thin film of the above-mentioned compound is coated with an imide group-containing polymer film, the film defects are considerably improved, but the results are insufficient.
そこで、化合物薄膜とイミド基含有高分子膜間に、金属
媒体より卑な金属薄膜を形成せしめる事により、金属媒
体の耐湿性を大幅に向上させたものである。Therefore, by forming a metal thin film that is more base than the metal medium between the compound thin film and the imide group-containing polymer film, the moisture resistance of the metal medium is greatly improved.
イミド基含有高分子膜が優れた潤滑効果を有する事は公
知であるが、ヘッドとの接触により除々に摩耗し、該高
分子膜の表面が平滑化し、一方のヘッドには、摩耗した
該高分子物質が付着し、ヘッドと記憶体間の静摩擦係数
が増大しステイキング現象に至る事からスピンドルモー
ターが停止する起動不良が近年大きな問題点として指て
きされている。そこで脂肪酸とDi、INa、に、Mg
。It is known that an imide group-containing polymer film has an excellent lubricating effect, but it gradually wears out due to contact with the head, and the surface of the polymer film becomes smooth. In recent years, starting failures in which the spindle motor stops due to the adhesion of molecular substances and an increase in the coefficient of static friction between the head and the storage body, leading to a staking phenomenon, have been pointed out as a major problem. Therefore, fatty acids, Di, INa, and Mg
.
σaから金属との塩を被覆することにより、上述の問題
を解決した。これらの金属塩は、塑性変形流動性に優れ
ることから、記憶体とヘッド間の摩擦係数を著るしく低
下せしめるものであり、記憶体及びヘッドの物理的劣化
も著るしく低下する。The above-mentioned problem was solved by coating a salt with a metal from σa. Since these metal salts have excellent plastic deformation fluidity, they significantly reduce the coefficient of friction between the storage body and the head, and also significantly reduce the physical deterioration of the storage body and the head.
近年、小型ハードディスクドライブがより厳しい環境で
用いられる事が多くなりつつあるが、該金属塩の融点が
80℃以上である事から、その効果は上記の環境下でも
充分に発揮される。In recent years, small hard disk drives are increasingly being used in harsher environments, but since the melting point of the metal salt is 80° C. or higher, its effects can be fully demonstrated even under the above environments.
以上の様にして、機械的信頼性、耐食性ともに大幅に向
上せしめた記憶体を提供することが可能になった。In the manner described above, it has become possible to provide a memory body with significantly improved mechanical reliability and corrosion resistance.
〔実施例1〕
誂向仕上げされたディスク状アルミニウム合金基板上に
非磁性合金メッキ、N1−P合金メッキを約15μm厚
に被覆後、研摩により10μ鴇厚、表面粗さを103μ
m以下に加工し、更にC0−N1−P合金を約107μ
扉厚にメッキを行なった。[Example 1] Non-magnetic alloy plating and N1-P alloy plating were coated to a thickness of about 15 μm on a custom-finished disk-shaped aluminum alloy substrate, and then polished to a thickness of 10 μm and a surface roughness of 103 μm.
107 μm or less, and further processed C0-N1-P alloy to approximately 107 μm.
The door was plated thickly.
次にマグネトロンスパッタ法で、Sin、を3ooX、
crを50X1メリイミドアミン被膜(ターゲット:T
ニー2200東し製)を1501に連続成膜した。Next, by magnetron sputtering, Sin, 3ooX,
CR with 50X1 melimidamine coating (Target: T
Ni 2200 (manufactured by Toshi) was continuously formed into a film on 1501.
更に下記処理液に、上記ディスクを浸漬の後、10 c
tt1/ jlllで引き上げ、ステアリン酸ナトリウ
ムを約1001被覆した。Further, after immersing the above disk in the following treatment solution, 10 c
It was pulled up with tt1/jlll and coated with about 1001 sodium stearate.
処理液
〔実施例2〕
実施例1と同様にして金属媒体を有するディスクを作製
した。 。Treatment liquid [Example 2] A disk having a metal medium was produced in the same manner as in Example 1. .
次にマグネトロンスパッタ法で、T1を5of、Tie
、を300^、Tiを50A1ポリアミドイミド被膜(
ターゲット二Tニー1100東し製)を200又連続成
膜した。Next, by magnetron sputtering, T1 is 5of, Tie
, 300^, Ti 50A1 polyamideimide coating (
200 films were continuously formed using a target of 2T knee 1100 (manufactured by Toshi).
一
更に下記処理液を約2sj(5/4アイスク)をディス
ク片面ごとに滴下後、j500rpm で20秒回転さ
せて、オレイン酸リチウムを約5゜^塗布した。First, approximately 2sj (5/4 ice cubes) of the following treatment solution was dropped onto each side of the disk, and the disc was rotated at 500 rpm for 20 seconds to coat approximately 5° of lithium oleate.
処理液
〔実施例3〕
研摩されたN1−P合金メッキディスク基板にマグネト
ロンスパッタ法でcrをaooXXc。Treatment liquid [Example 3] AooXXc was applied to a polished N1-P alloy plated disk substrate by magnetron sputtering.
−N i −Or合金(Co−30at、%N i、
−7,5at、%or) を700X、TiNを40
0X、Orを10OA、ポリアミドイミド被膜(ターゲ
ラ):Tl−5o3z東し製)をzooXに連a成膜し
た。-Ni-Or alloy (Co-30at, %Ni,
-7,5at,%or) 700X, TiN 40
0X and 10OA of Or, and a polyamide-imide film (Tagera) (manufactured by Tl-5o3z Toshi) was successively formed on zooX.
次にリグノセリン酸カリウムとベヘン酸マグネシウムの
混合物(重斂比1対1)を抵抗加熱蒸着法で約100X
厚に成膜した。Next, a mixture of potassium lignocerate and magnesium behenate (gravitational ratio 1:1) was deposited at about 100X using a resistance heating vapor deposition method.
A thick film was formed.
〔実施例4〕
実施例1と同様にして金属媒体を有するディスクを作製
した。[Example 4] A disk having a metal medium was produced in the same manner as in Example 1.
次にマグネトロンスパッタ法で、Or、03 を25
OA、Orを50X、ポリイミドアミン被膜(ターゲッ
トTl−2130東し製)を150又に連続成膜した。Next, by magnetron sputtering, Or, 03 was 25
A polyimide amine film (Target Tl-2130 manufactured by Toshi) was successively formed into a 150-fold film using OA and Or at 50X.
更に下記処理液を用い、実施例1同様に等速引き上げ法
で、ステアリン酸リチウムを約soX成膜した。Furthermore, a film of approximately soX lithium stearate was formed using the following treatment solution and the same speed pulling method as in Example 1.
処理液
〔比較例1〕
実施例1に於けるOrの成膜を除き、他は実施例1に準
じてディスクを作製した。Treatment liquid [Comparative example 1] A disk was produced in accordance with Example 1 except for the film formation of Or in Example 1.
〔比較例2〕
実施例1に於けるステアリン酸ナトリウムの被覆を除き
、他は実施例1に準じてディスクを作製した。[Comparative Example 2] A disk was produced in the same manner as in Example 1 except for the coating with sodium stearate.
〔比較例3〕
実施例2に於けるT1をsoX及びT10.を500^
の形成を除き、直接金属媒体上にTi。[Comparative Example 3] T1 in Example 2 was replaced with soX and T10. 500^
Ti directly on the metal medium, except for the formation of Ti.
ポリアミドイミド被膜の成膜及びオレイン酸リチウムの
塗布を実施例2に準じて行った。Formation of a polyamide-imide film and application of lithium oleate were performed according to Example 2.
〔比較例4〕
実施例2に°於けるT10.上ので1及びポリアミドイ
ミド被膜の成膜を除き、他は実施例2に準じてディスク
を作製した。[Comparative Example 4] T10 in Example 2. A disk was produced in accordance with Example 2 except for 1 above and the formation of the polyamide-imide film.
以上の実施例及び比較例で述べたディスクの品質評価は
aSS試験及び耐湿試験で行った。The quality of the discs described in the above Examples and Comparative Examples was evaluated by an aSS test and a moisture resistance test.
aSS試験は083前後の外観的変化、静摩擦係数と出
力低下率を求めた。The aSS test determined the appearance change, static friction coefficient, and output reduction rate before and after 083.
耐湿試験は、80℃、80%’R、H、の環境にディス
クを放置し、放置時間の経過を追って、ミッシングピッ
ド数を確認し、その増加した時点を寿命とした。In the moisture resistance test, the disk was left in an environment of 80° C. and 80% R, H, and the number of missing pids was confirmed as the leaving time elapsed, and the time when the number of missing pids increased was defined as the life span.
尚、実施例1のディスクは、100℃に14日間放置し
た後にも、上記同様の品質評価を行った又、実施例では
述べなかったが、基本材料はAt合金に限定されるもの
ではなく、プラスチック、ガラス、セラミック等、任意
である。The disk of Example 1 was subjected to the same quality evaluation as described above even after being left at 100°C for 14 days.Although not mentioned in the Example, the basic material is not limited to At alloy. Plastic, glass, ceramic, etc. are optional.
以上述べた様に本発明によれば、より薄膜で機械的信頼
性と耐食性を充分に確保した高密度記録対応のディスク
の提供が可能になった。As described above, according to the present invention, it has become possible to provide a disk compatible with high-density recording that has a thinner film and has sufficient mechanical reliability and corrosion resistance.
又ディスクドライブがより厳しい環境下で用いられた場
合を想定し、100℃の環境下にディスクを放置させた
後の品質も評価したが、何等、それにより特性が劣化し
ないものであり、高耐久対応のディスクの提供が可能に
なった。In addition, we evaluated the quality of the disk after leaving it in an environment of 100 degrees Celsius, assuming that the disk drive would be used in a harsher environment, but it was found that the characteristics did not deteriorate as a result of this, indicating that it is highly durable. Compatible discs are now available.
以 上that's all
Claims (4)
磁性薄膜媒体上に、酸化物及び窒化物から選ばれる少な
くとも1種の物質より成る薄膜が第1層として被覆され
、次にAl、Cr、Ti、Ta、Nbから選ばれる少な
くとも1種の金属薄膜が第2層として被覆され、次にイ
ミド基含有高分子膜が第3層として被覆され、更に、少
なくとも脂肪酸とLi、Na、K、Mg、Caから選ば
れる金属との塩で融点が80℃以上の物質が第4層とし
て被覆せしめたことを特徴とする磁気記憶体。(1) A metal magnetic thin film medium is coated on a substrate, a thin film made of at least one substance selected from oxides and nitrides is coated on the metal magnetic thin film medium as a first layer, and then Al, A thin film of at least one metal selected from Cr, Ti, Ta, and Nb is coated as a second layer, then an imide group-containing polymer film is coated as a third layer, and at least one metal thin film selected from Cr, Ti, Ta, and Nb is coated as a third layer. 1. A magnetic memory body, characterized in that the fourth layer is coated with a substance having a melting point of 80° C. or higher, which is a salt with a metal selected from , Mg, and Ca.
る少なくとも1種の物質より成る薄膜との間にAl、C
r、Ti、Ta、Nbから選ばれる少なくとも1種の金
属薄膜が形成せしめられた事を特徴とする特許請求の範
囲第1項記載の磁気記憶体。(2) Between the metal magnetic thin film medium and the thin film made of at least one substance selected from oxides and nitrides,
2. The magnetic memory according to claim 1, wherein a thin film of at least one metal selected from r, Ti, Ta, and Nb is formed.
Nb、Siから選ばれる元素の化合物であることを特徴
とする特許請求の範囲第1項記載の磁気記憶体。(3) Oxides and nitrides include Al, Cr, Ti, Ta,
2. The magnetic memory according to claim 1, which is a compound of elements selected from Nb and Si.
、WS_2、BN、炭素から選ばれる少なくとも1種の
物質を含有することを特徴とする特許請求の範囲第1項
記載の磁気記憶体。(4) The imide group-containing polymer film is fluororesin, MOS_2
, WS_2, BN, and carbon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2854986A JPS62185222A (en) | 1986-02-12 | 1986-02-12 | Magnetic memory body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2854986A JPS62185222A (en) | 1986-02-12 | 1986-02-12 | Magnetic memory body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62185222A true JPS62185222A (en) | 1987-08-13 |
Family
ID=12251736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2854986A Pending JPS62185222A (en) | 1986-02-12 | 1986-02-12 | Magnetic memory body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62185222A (en) |
-
1986
- 1986-02-12 JP JP2854986A patent/JPS62185222A/en active Pending
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