JPS62184769U - - Google Patents
Info
- Publication number
- JPS62184769U JPS62184769U JP1986073622U JP7362286U JPS62184769U JP S62184769 U JPS62184769 U JP S62184769U JP 1986073622 U JP1986073622 U JP 1986073622U JP 7362286 U JP7362286 U JP 7362286U JP S62184769 U JPS62184769 U JP S62184769U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- semiconductor laser
- circuit
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Optical Communication System (AREA)
Description
第１図は本考案の一実施例を示す回路図、第２
図は従来例を示すブロツク図、第３図は入力信号
の波形図である。
１……電界効果型トランジスタ、２……トラン
ジスタ、３……抵抗、４……半導体レーザダイオ
ード、５……抵抗、６……チヨークコイル、７…
…直流バイアス電流供給回路、８……キヤパシタ
、９……光出力、１０……バイアス電流（ｉｂ）
、１１……パルス電流（ｉｐ）、１２……コレク
タ電流（ｉｃ）、１３……コレクタ接地形増幅回
路、１４……定電圧回路。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a block diagram showing a conventional example, and FIG. 3 is a waveform diagram of an input signal. DESCRIPTION OF SYMBOLS 1... Field effect transistor, 2... Transistor, 3... Resistor, 4... Semiconductor laser diode, 5... Resistor, 6... Chiyoke coil, 7...
...DC bias current supply circuit, 8...Capacitor, 9...Optical output, 10...Bias current (i b )
, 11... Pulse current ( ip ), 12... Collector current ( ic ), 13... Collector grounded amplification circuit, 14... Constant voltage circuit.
Claims (1)
増幅回路と、該電界効果型トランジスタのドレイ
ン電極と基準電位との間に接続された半導体レー
ザと、前記該電界効果型トランジスタのドレイン
電極に接続された直流バイアス電流供給回路とを
含む半導体レーザ駆動回路において、前記電界効
果型トランジスタのソース電極と電源との間に接
続された抵抗と、前記ソース電極にトランジスタ
のエミツタが接続されたコレクタ接地形増幅回路
とを含む半導体レーザ駆動回路。 a common source amplifier circuit using a field effect transistor; a semiconductor laser connected between the drain electrode of the field effect transistor and a reference potential; and a direct current connected to the drain electrode of the field effect transistor. a bias current supply circuit; a resistor connected between the source electrode of the field effect transistor and a power source; and a grounded collector amplification circuit in which the emitter of the transistor is connected to the source electrode. A semiconductor laser drive circuit including:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986073622U JPH0514535Y2 (en) | 1986-05-15 | 1986-05-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986073622U JPH0514535Y2 (en) | 1986-05-15 | 1986-05-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62184769U true JPS62184769U (en) | 1987-11-24 |
| JPH0514535Y2 JPH0514535Y2 (en) | 1993-04-19 |
Family
ID=30918114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986073622U Expired - Lifetime JPH0514535Y2 (en) | 1986-05-15 | 1986-05-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514535Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928396A (en) * | 1982-08-10 | 1984-02-15 | Nec Corp | Semiconductor laser drive device |
| JPS59151481A (en) * | 1983-02-17 | 1984-08-29 | Nec Corp | Driving circuit laser diode |
-
1986
- 1986-05-15 JP JP1986073622U patent/JPH0514535Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928396A (en) * | 1982-08-10 | 1984-02-15 | Nec Corp | Semiconductor laser drive device |
| JPS59151481A (en) * | 1983-02-17 | 1984-08-29 | Nec Corp | Driving circuit laser diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0514535Y2 (en) | 1993-04-19 |
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