JPS62183525A - Resist developing apparatus - Google Patents
Resist developing apparatusInfo
- Publication number
- JPS62183525A JPS62183525A JP2643286A JP2643286A JPS62183525A JP S62183525 A JPS62183525 A JP S62183525A JP 2643286 A JP2643286 A JP 2643286A JP 2643286 A JP2643286 A JP 2643286A JP S62183525 A JPS62183525 A JP S62183525A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- temperature
- heat
- pretreatment liquid
- pretreatment agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000009833 condensation Methods 0.000 claims abstract description 6
- 230000005494 condensation Effects 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 41
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000002203 pretreatment Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 5
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009834 vaporization Methods 0.000 abstract description 3
- 230000008016 vaporization Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 229940035429 isobutyl alcohol Drugs 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はレジスト現像装置、詳しくは半導体ウェハ、半
導体マスク、光ディスク等の被現像体に装着されたレジ
スト層の現像を行なうレジスト現像装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resist developing apparatus, and more particularly to a resist developing apparatus that develops a resist layer mounted on an object to be developed, such as a semiconductor wafer, a semiconductor mask, or an optical disk.
（従来の技術）
従来、半導体ウェハにおけるレジスト層の現像を行なう
現像装置は、特開昭５７−１５２１２９号公報に示され
、また、第２図に示した如く、２つのノズル（Ｎ１）（
Ｎ２）を備え、半導体ウェハ（Ｗ）に前処理液を放出し
た後現像液を放出できるようにして、前記ウェハ（Ｗ）
の現像に先立って放出される前処理液により該ウエノ１
（Ｗ）の経時変化による感度のバラツキを低減する如く
している。(Prior Art) Conventionally, a developing device for developing a resist layer on a semiconductor wafer is disclosed in Japanese Unexamined Patent Publication No. 152129/1982, and as shown in FIG.
N2), which is capable of releasing a developing solution after releasing a pretreatment liquid onto a semiconductor wafer (W), and
The pre-treatment liquid released prior to the development of Ueno 1
This is intended to reduce variations in sensitivity due to changes in (W) over time.
また一方、一般に現像液はアルコール系の混合溶剤から
成り揮撥性を存していること＼、最近のレジスト高感度
化に伴なう現像温度に対する要求が重要なものとなって
いることから、現像槽（Ｄ）を密閉状にすると共に、現
像液の構成液体を封入して成る蒸発槽（Ａ）（Ｂ）を設
けて、前記現像槽（Ｄ）内を飽和状態とすることにより
、−刃側のノズル例えば前記ノズル（Ｎ２）から放出さ
れる現像液が前記現像槽（Ｄ）内で蒸発して温度を低下
させてしまうのを防止して、前記現像槽（Ｄ）内の温度
を一定に保持する如くしている。On the other hand, developers generally consist of alcohol-based mixed solvents and are volatile, and the development temperature requirements have become important as resists have become more sensitive in recent years. By making the developer tank (D) airtight and providing evaporation tanks (A) and (B) in which liquids constituting the developer are sealed, the inside of the developer tank (D) is brought into a saturated state. The temperature in the developer tank (D) is reduced by preventing the developer discharged from the blade-side nozzle, for example, the nozzle (N2), from evaporating in the developer tank (D) and lowering the temperature. I try to keep it constant.
（発明が解決しようとする問題点）
ところが、上記従来例によると、前記現像槽（Ｄ）内を
飽和させるために、前記蒸発槽（Ａ）（Ｂ）を設ける必
要があり、その分構造が複雑になるし、また、装置全体
が大形になる問題があった。(Problems to be Solved by the Invention) However, according to the above-mentioned conventional example, it is necessary to provide the evaporation tanks (A) and (B) in order to saturate the inside of the developer tank (D), and the structure is accordingly reduced. There was a problem that it became complicated and the entire device became large.
また前記現像槽（Ｄ）を密閉状にするだけでは、外気温
度の影響を受けること＼なり、前記現像槽（Ｄ）内の温
度が安定しにくいという問題もあった。Further, if the developer tank (D) is simply made airtight, there is a problem that the temperature inside the developer tank (D) is difficult to stabilize because it is affected by the outside temperature.
本発明の目的は、現像槽に工夫を加え、かつ前処理液を
利用して、現像槽内の温度を所定値に高精度に保持でき
るようにしたレジスト現像装置を提供する点にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a resist developing device in which the temperature inside the developer tank can be maintained at a predetermined value with high accuracy by adding a device to the developer tank and using a pretreatment liquid.
（問題点を解決するための手段）
そこで本発明は、被現像体（Ｗ）の保持手段を内装した
密閉状の現像槽（１）に、前記保持手段で保持する被現
像体（Ｗ）に前処理液を放出した後現像液を放出する放
出手段を設けたレジスト現像装置において、前記現像槽
（１）の胴体（１１）に真空チャンバー（１４）を形成
して、前記現像槽（１）を断熱構造とする一方、前記前
処理液と現像液とを、前処理液を放出した後現像液を放
出したとき、前処理液の凝縮に伴なう熱量と現像液の蒸
発に伴なう熱量とがはと均衡する組成から構成すると共
に、前記前処理液と現像液とをは〈同一温度に設定する
温調器（７）を設けたのである。(Means for Solving the Problems) Therefore, the present invention provides an airtight developing tank (1) which is equipped with a holding means for the object to be developed (W), and the object to be developed (W) held by the holding means. In a resist developing apparatus provided with a discharge means for discharging a developer after discharging a pre-treatment solution, a vacuum chamber (14) is formed in the body (11) of the developer tank (1), and the developer tank (1) On the other hand, when the pretreatment liquid and the developer are discharged after the pretreatment liquid is discharged, the amount of heat due to the condensation of the pretreatment liquid and the amount of heat due to the evaporation of the developer are reduced. In addition to having a composition that balances the amount of heat, a temperature regulator (7) is provided to set the pretreatment liquid and the developer at the same temperature.
（作用）
前処理液と現像液とが、前処理液を放出した後現像液を
放出したとき、前処理液の凝縮に伴なう熱量と現像液の
蒸発に伴なう熱量とかは（均衡する組成から構成され、
かつ前記温調器（７）によりは糧同一温度に設定される
ことにより、前処理液の放出後に現像液が放出されても
、現像液の蒸発による温度低下をほとんどなくすること
ができ、しかも前記真空チャンバー（１４）により、前
記現像槽（１）を断熱構造としたことにより、外気の影
響をも排することができ、従って、前記現像槽（１）内
の温度を所定の一定温度に高精度に保持できるのである
。(Function) When the pretreatment liquid and the developer release the pretreatment liquid and then release the developer, the amount of heat associated with the condensation of the pretreatment liquid and the amount of heat associated with the evaporation of the developer are (balanced). It is composed of a composition of
In addition, by setting the temperature controller (7) to the same temperature as the pretreatment liquid, even if the developer is released after the pretreatment liquid is released, the temperature drop due to evaporation of the developer can be almost eliminated. By making the developing tank (1) have a heat-insulating structure using the vacuum chamber (14), the influence of outside air can be eliminated, and therefore the temperature inside the developing tank (1) can be maintained at a predetermined constant temperature. It can be held with high precision.
（実施例）
第１図において（１）は現像槽であって、この現像槽（
１）は二重壁構造とした胴体（１１）と、底壁（１２）
及び蓋体（１３）とから成り、その内部に密閉状の現像
室（１０）を形成すると共に、前記胴体（１１）の二重
壁構造により、真空チャンバー（１４）を形成して、前
記現像槽（１）を断熱構造にしているのである。(Example) In Fig. 1, (1) is a developer tank, and this developer tank (
1) has a double-walled fuselage (11) and a bottom wall (12)
and a lid body (13), forming a sealed developing chamber (10) inside thereof, and a vacuum chamber (14) formed by the double wall structure of the body (11), which The tank (1) has a heat insulating structure.
また、前記底壁（１２）には支持筒（１５）を立設して
、その内部に、上端に被現像体として例えば半導体ウェ
ハ（Ｗ）を固定状に保持するチャック（１６）をもった
回転軸（１７）を回転自由に支持するのであり、また、
前記蓋体（１３）には、前記チャック（１６）に保持さ
れる前記ウェハ（Ｗ）に対向する２つの第１及び第２ノ
ズル（２Ａ）（２Ｂ）を配設するのである。Further, a support cylinder (15) is provided upright on the bottom wall (12), and a chuck (16) is provided inside the support cylinder (15) for fixedly holding an object to be developed, such as a semiconductor wafer (W), at the upper end thereof. It supports the rotary shaft (17) freely, and also,
The lid (13) is provided with two first and second nozzles (2A) (2B) that face the wafer (W) held by the chuck (16).
前記第１及び第２ノズル（２Ａ）（２Ｂ）は、送液管（
５）（Ｅｌ）を介して、加圧タンクを構成する前処理液
容器（３５）及び現像液容器（３６）にそれぞれ接続さ
れるのであり、前記ノズル（２Ａ）（２Ｂ）の近くに介
装する制御弁（５１）（８１）の開閉操作により、まず
前記第１ノズル（２Ａ）から前記ウェハ（Ｗ）に前処理
液を例えば噴射により所定時間放出した後に、引続いて
前記第２ノズル（２Ｂ）から同ウェハ（Ｗ）に現像液を
放出（噴射）するようにしている。前処理液は、現像に
先立って前記ウェハ（Ｗ）の経時変化による感度のバラ
ツキを低減するものであって、この前処理液の放出時間
は概ね２〜３分程度である。尚、（５２）Ｃｆ３２＞は
、前処理液及び現像液をろ過するためのストレーナであ
る。The first and second nozzles (2A) (2B) are provided with liquid feeding pipes (
5) (El) are connected to the pretreatment liquid container (35) and the developer container (36) that constitute the pressurized tank, and the nozzles (2A) and (2B) are By opening and closing the control valves (51) and (81), the pretreatment liquid is first discharged from the first nozzle (2A) onto the wafer (W), for example, by injection, for a predetermined period of time, and then the pretreatment liquid is released from the second nozzle (2A). 2B) onto the wafer (W). The pretreatment liquid is used to reduce variations in sensitivity due to changes in the wafer (W) over time prior to development, and the release time of this pretreatment liquid is approximately 2 to 3 minutes. Note that (52) Cf32> is a strainer for filtering the pretreatment liquid and the developer.
前記した前処理液と現像液とは、前処理液を放出した後
現像液を放出したとき、前処理液の凝縮に伴なう熱量と
現像液の蒸発に伴なう熱量とがほゞ均衡する組成から成
るもを用いているのであり、具体的には、例えば圧力相
当飽和温度や、分子量、蒸発潜熱かはと同一のものを用
いているのであって、例えば、前処理液にイソプロピル
アルコールを、また、現像液にエタノールとイソブチル
アルコールとを約５０対５０の割合で混合したものを用
いているのである。The pretreatment liquid and developer described above are such that when the pretreatment liquid is released and the developer is released, the amount of heat due to condensation of the pretreatment liquid and the amount of heat due to evaporation of the developer are almost balanced. Specifically, for example, the same composition is used in terms of pressure equivalent saturation temperature, molecular weight, and latent heat of vaporization.For example, isopropyl alcohol is used in the pretreatment liquid. Furthermore, a developer mixture of ethanol and isobutyl alcohol in a ratio of about 50:50 is used.
一方、前記送液管（５）（８）は、その途中にフィル状
の熱交換器（５３）（６３）をもち、これら熱交換器（
５３）（６３）は、断熱構造とした恒温槽（７０）に、
恒温熱媒体としての水と、ヒータ（７１）及び冷凍装置
の蒸発器（７２）とを内装して成る１台の温調器（７）
内に配置され、前記ノズル（２Ａ）（２Ｂ）からそれぞ
れ放出される前処理液と現像液とを同一温度に設定でき
るようにしている。On the other hand, the liquid sending pipes (5) and (8) have fill-shaped heat exchangers (53) and (63) in the middle thereof, and these heat exchangers (
53) (63) is placed in a constant temperature oven (70) with a heat insulating structure.
One temperature controller (7) that contains water as a constant temperature heat medium, a heater (71), and an evaporator (72) of a freezing device.
The pretreatment liquid and the developer discharged from the nozzles (2A) and (2B), respectively, can be set to the same temperature.
尚、前処理液と現像液とを個別の温調器で、同一温度も
しくはは糧同一温度に設定するようにしてもよい。Note that the pretreatment liquid and the developer may be set at the same temperature or at the same temperature using separate temperature controllers.
前記恒温槽（７０）に内装する前記ヒータ（７１）及び
蒸発器（７２）の運転は前記現像室（１０）の室内温度
などを検出し、予じめ任意に設定した設定温度との比較
を行なうコントローラ（８）により制御されるのであっ
て、前記ヒータ（７１）及び蒸発器（７２）の運転制御
により５℃乃至４０℃で誤差±０．１℃の一定の恒温水
（恒温熱媒）を形成できるのである。The heater (71) and evaporator (72) installed in the constant temperature oven (70) are operated by detecting the indoor temperature of the developing chamber (10) and comparing it with a set temperature arbitrarily set in advance. The controller (8) controls the operation of the heater (71) and evaporator (72) to maintain a constant temperature of water (constant temperature heating medium) with an error of ±0.1°C from 5°C to 40°C. can be formed.
また、前記蒸発器（７２）に対応する冷凍装置における
凝縮器（７８）は、圧縮機と共にコンデンシングユニッ
ト（９）に設けるのであって、前記蒸発器（７２）の運
転制御は前記圧縮機の発停又は容量制御により行なうの
である。Further, the condenser (78) in the refrigeration system corresponding to the evaporator (72) is provided in the condensing unit (9) together with the compressor, and the operation control of the evaporator (72) is controlled by the compressor. This is done by turning on/off or controlling capacity.
尚、第１図において（２０）は、前記現像槽（１）の胴
体（１１）に設けるウェハ出入口であって、この出入口
（２０）には扉（２１）を開閉自由に取付けている。In FIG. 1, (20) is a wafer entrance/exit provided in the body (11) of the developer tank (1), and a door (21) is attached to this entrance/exit (20) so that it can be opened and closed freely.
また、（２２）は前記蓋体（１３）に取付けるファンで
あって、このファン（２２）の撹伴作用により、前記現
像室（１０）の室内を迅速に飽和状態にできると共に、
この室内の温度安定性を向上させることができるのであ
る。この種のファンは、前記チャック（１６）の回転軸
（１７）を利用して、この軸（１７）に取付けてもよい
。Further, (22) is a fan attached to the lid (13), and the stirring action of this fan (22) allows the interior of the developing chamber (10) to be quickly saturated, and
This makes it possible to improve the temperature stability within the room. This type of fan may be attached to the rotating shaft (17) of the chuck (16) using the rotating shaft (17).
以上の構成において、半導体ウェハ（Ｗ）の現像を行な
う場合、まず前記第１ノズル（２Ａ）から前処理液を放
出するのであり、この前処理液によって前記現像室（１
０）内は、前記温調器（７）で調整される設定温度に見
合った所定の圧力及び温度で飽和状態になるのである。In the above configuration, when developing a semiconductor wafer (W), a pretreatment liquid is first discharged from the first nozzle (2A), and this pretreatment liquid is used to develop the development chamber (1).
0) is saturated at a predetermined pressure and temperature commensurate with the set temperature adjusted by the temperature controller (7).
そして、前処理液の放出後、引続いて前記第２ノズル（
２Ｂ）から現像液を放出するのであるが、このとき前記
現像室（１０）内は前処理液により所定の圧力及び温度
で飽和してあり、しかもこの現像液は前処理液と圧力相
当飽和温度、分子量及び蒸発潜熱かはと同じ成分から構
成され、かつ前記温調器（７）では糧同一温度に設定さ
れるものであるから、この現像液が放出されても、前処
理液の凝縮に伴なう熱量と現像液の蒸発に伴なう熱量と
がほゞ均衡すること＼なり、前記現像室（１０）内の温
度は、はとんど変化しないのである。After discharging the pretreatment liquid, the second nozzle (
2B). At this time, the inside of the developing chamber (10) is saturated with the pretreatment liquid at a predetermined pressure and temperature, and this developer is at a pressure equivalent saturation temperature with the pretreatment liquid. , the molecular weight and the latent heat of vaporization are the same, and the temperature controller (7) is set at the same temperature. The amount of heat associated with the evaporation of the developing solution is almost balanced with the amount of heat associated with the evaporation of the developer, so the temperature inside the developing chamber (10) hardly changes.
しかも前記真空チャンバー（１４）により、前記現像槽
（１）を断熱構造としているので、前処理液放出時にお
いても現像液放出時においても前記現像室（１０）内は
外気の影響を受けることがないのである。Furthermore, since the vacuum chamber (14) provides the developer tank (1) with a heat-insulating structure, the inside of the developer chamber (10) is not affected by outside air either when the pre-processing solution is released or when the developer is released. There isn't.
従って、前記現像室（１０）内は所定の温度に高精度に
保持され、前記ウェハ（Ｗ）の現像を良好にできるので
ある。Therefore, the inside of the developing chamber (10) is maintained at a predetermined temperature with high precision, and the wafer (W) can be developed well.
尚、前記現像室（１０）に臨む前記胴体（１１）の内壁
面や、前記現像室（１０）内に配設される前記チャック
（１６）や、支持筒（１５）等は熱容量が小さいほうが
好ましい。また、前記現像室（１０）の内部容積は小さ
いほうが好ましい。すなわち、斯くすることにより、前
処理液により前記現像室（１０）内が迅速に飽和でき、
上記作用効果を一層顕著に奏することができるのである
。It should be noted that the inner wall surface of the body (11) facing the developing chamber (10), the chuck (16), the support cylinder (15), etc. disposed in the developing chamber (10) should have a smaller heat capacity. preferable. Further, it is preferable that the internal volume of the developing chamber (10) is small. That is, by doing so, the inside of the developing chamber (10) can be quickly saturated with the pretreatment liquid,
The above-mentioned effects can be achieved even more significantly.
（発明の効果）
以上のように本発明によると、前記現像槽（１）の胴体
（１１）に真空チャンバー（１４）を形成して、前記現
像槽（１）を断熱構造とする一方、前記前処理液と現像
液とを、前処理液を放出した後現像液を放出したとき、
前処理液の凝縮に伴なう熱量と現像液の蒸発に伴なう熱
量とかは糧均衡する組成から構成すると共に、前記前処
理液と現像液とをは糧同一温度に設定する温調器（７）
を設けたから、前記現像槽（１）内の温度を所定値に高
精度に保持できるのである。(Effects of the Invention) As described above, according to the present invention, a vacuum chamber (14) is formed in the body (11) of the developer tank (1), and the developer tank (1) has a heat insulating structure. When the pre-treatment liquid and the developer are discharged after the pre-treatment liquid is discharged and the developer is discharged,
The temperature controller is configured to have a composition that balances the amount of heat associated with condensation of the pre-treatment liquid and the amount of heat associated with evaporation of the developer, and sets the pre-treatment liquid and the developer at the same temperature. (7)
Since this is provided, the temperature inside the developer tank (1) can be maintained at a predetermined value with high precision.
従って、現像温度の変化によるレジスト感度のパラつき
を最小限に抑制でき、半導体ウェハ等の被現像体の製品
歩留を向上できるのである。Therefore, variations in resist sensitivity due to changes in development temperature can be suppressed to a minimum, and the product yield of objects to be developed such as semiconductor wafers can be improved.
第１図は本発明現像装置の一実施例を示す概略説明図、
第２図は従来例を示す概略説明図である。
（１）・・・・・・現像槽
（７）・・・・・・温調器
（１１）・・・・・・胴体FIG. 1 is a schematic explanatory diagram showing an embodiment of the developing device of the present invention;
FIG. 2 is a schematic explanatory diagram showing a conventional example. (1)...Developer tank (7)...Temperature controller (11)...Body
Claims (1)
像槽（１）に、前記保持手段で保持する被現像体（Ｗ）
に前処理液を放出した後現像液を放出する放出手段を設
けたレジスト現像装置であって、前記現像槽（１）の胴
体（１１）に真空チャンバー（１４）を形成して、前記
現像槽（１）を断熱構造とする一方、前記前処理液と現
像液とを、前処理液を放出した後現像液を放出したとき
、前処理液の凝縮に伴なう熱量と現像液の蒸発に伴なう
熱量とがほゞ均衡する組成から構成すると共に、前記前
処理液と現像液とをほゞ同一温度に設定する温調器（７
）を設けたことを特徴とするレジスト現像装置。(1) The object to be developed (W) held by the holding means in a closed developing tank (1) equipped with a holding means for the object to be developed (W)
A resist developing device is provided with a discharge means for discharging a pre-treatment solution and then discharging a developing solution, the resist developing device having a vacuum chamber (14) formed in a body (11) of the developer tank (1), (1) has an adiabatic structure, and when the pretreatment liquid and the developer are discharged after the pretreatment liquid is discharged, the amount of heat due to the condensation of the pretreatment liquid and the evaporation of the developer are reduced. A temperature controller (7) configured to have a composition in which the amount of heat involved is almost balanced, and to set the pretreatment liquid and the developer to approximately the same temperature.
) is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2643286A JPS62183525A (en) | 1986-02-07 | 1986-02-07 | Resist developing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2643286A JPS62183525A (en) | 1986-02-07 | 1986-02-07 | Resist developing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62183525A true JPS62183525A (en) | 1987-08-11 |
Family
ID=12193348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2643286A Pending JPS62183525A (en) | 1986-02-07 | 1986-02-07 | Resist developing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62183525A (en) |
-
1986
- 1986-02-07 JP JP2643286A patent/JPS62183525A/en active Pending
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