JPS62173703A - Sic thin film thermistor - Google Patents
Sic thin film thermistorInfo
- Publication number
- JPS62173703A JPS62173703A JP1513286A JP1513286A JPS62173703A JP S62173703 A JPS62173703 A JP S62173703A JP 1513286 A JP1513286 A JP 1513286A JP 1513286 A JP1513286 A JP 1513286A JP S62173703 A JPS62173703 A JP S62173703A
- Authority
- JP
- Japan
- Prior art keywords
- lead wire
- sic
- thin film
- glass layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 10
- 230000003014 reinforcing effect Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000009835 boiling Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910018885 Pt—Au Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高応答性、高耐熱性、高耐水性を要求される
温度センサに使用されるＳｉＣ薄膜サーミスタに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a SiC thin film thermistor used in a temperature sensor that requires high responsiveness, high heat resistance, and high water resistance.
従来の技術
従来のＳ工Ｃ薄膜サーミスタは、第２因に示すようにア
ルミナ基板１上に、金属ペーストにて一対の対向電極２
Ｎ、２ｂ’ｉ形成した後、リード線取り出し部電極３ａ
、３ｂと除く前記対向電極２ ａ。Conventional technology As shown in the second factor, a conventional S-C thin film thermistor has a pair of opposing electrodes 2 on an alumina substrate 1 using metal paste.
After forming N, 2b'i, lead wire extraction part electrode 3a
, 3b and the counter electrode 2a except for.
２ｂが形成されている前記アルミナ基板１上に５ｉＣＦ
Ｊ膜４をスパッタリングにより形成し、前記リード線取
り出し部電極３ａ、３ｂにリード線ｅａ、ｓｂｌ接続し
たのち、アルミナ系板１上全面にわたってガラス層５に
て被覆した構造であり７’Ｃ。5iCF on the alumina substrate 1 on which 2b is formed.
The J film 4 was formed by sputtering, the lead wires ea and sbl were connected to the lead wire extraction portion electrodes 3a and 3b, and then the entire surface of the alumina plate 1 was covered with a glass layer 5, which was 7'C.
発明が解決しようとする問題点
このような従来の構成でＩｉ、ＳｌＣ薄腰がリード線取
り出し部電極を除く対向電惨が形成されているアルミナ
基板上全面に形成されているため、この上からガラス層
で被覆してもＳｉＣ薄膜の端面汀ガラス層で完全に覆わ
れていないため、煮沸、スチーム等の苛酷な条件下では
、水分の吸着あるいは浸入により抵抗値の異ｎ低下をも
たらし、耐水性面で保証し難い構造であった。一方、リ
ード俸取り出し部霜、極にリード線分接続した後、アル
ミナ基板上全面をガラス層で１°σって１７り成ざルて
いるが、リード線とガラス層の熱膨張係数に差があるた
め、引き出しリード線に滑ってクラックが発生する場合
があり、この時にも同様に煮沸、スチーム等の苛酷な条
件下では、水分の浸入により抵抗値の異常低下？もたら
すという問題があった。Problems to be Solved by the Invention In such a conventional configuration, a thin layer of Ii, SlC is formed over the entire surface of the alumina substrate on which the opposing electric current is formed except for the lead wire extraction portion electrode. Even if the SiC thin film is coated with a glass layer, the edges of the SiC thin film are not completely covered with the glass layer, so under harsh conditions such as boiling or steam, the resistance value will drop due to adsorption or infiltration of water, making it difficult to resist water. It was a structure that was difficult to guarantee in terms of performance. On the other hand, after connecting the lead wires to the lead wires and poles, a glass layer is formed on the entire surface of the alumina substrate at an angle of 1°σ, but there is a difference in the coefficient of thermal expansion between the lead wires and the glass layer. Because of this, the pull-out lead wire may slip and crack, and at this time, under harsh conditions such as boiling or steam, the resistance value may drop abnormally due to moisture infiltration. There was a problem with bringing it.
本発明はこのような問題点を解決するもので、煮沸、ス
チーム等の苛酷な条件下でも十分に使用可能な耐水性、
耐湿性に優れたＳｉＣ薄膜サーミスタを提供することを
目的とするものである。The present invention solves these problems by providing water resistance that can be used even under harsh conditions such as boiling and steam.
The object of the present invention is to provide a SiC thin film thermistor with excellent moisture resistance.
問題点を解決するための手段
この問題点を解決するために本発明は、セラミック絶縁
基板上に熱安定性に優れた金属ペーストにて一対の対向
電極を形成し、リード線取り出し部を除く前記対向電極
上にＳ工Ｃ遼膜を形成し、この上から５ｉｌＪ１７膜よ
り大きな面積を有するＳｉＣ保護用ガラス層でＳｉ０ｇ
膜を完全に被覆し更に前記リード線取り出し部電極にリ
ード線を接続し、このリード線取り出し部をリード線補
強用ガラスにて仮覆することにより構成されたＳｉＣ＃
膜す−ミスタである。Means for Solving the Problem In order to solve this problem, the present invention forms a pair of opposing electrodes using a metal paste with excellent thermal stability on a ceramic insulating substrate, and eliminates the lead wire extraction portion. A SiC film is formed on the counter electrode, and a SiC protective glass layer with a larger area than the 5ilJ17 film is formed on top of the Si0G film.
SiC# constructed by completely covering the film, further connecting a lead wire to the electrode of the lead wire extraction part, and temporarily covering this lead wire extraction part with glass for reinforcing the lead wire.
The film is Mr.
作用
このｔｌり成により、Ｓ工ＯＡｌ１膜は、この上からＳ
ｉＣ薄膜より大きな面積を有するＳｉＣ保護用ガラス層
で完全に被覆されていること、及び、リード線取り出し
都電極上に接続したリード線は、この上からリード線補
強用ガラスでリード線ヲ被可しているため、リード線と
リード線補強用ガラスの熱膨張係数の違いにより、リー
ド線に沿ってクランクが発生したとしても、ＳｉＣ保護
用ガラス層には、そのクラックが到達しないため、５ｉ
Ｃ４膜は、ＳｉＣ保護用ガラスで完全に被覆された状態
を維持することができるため、煮沸、スチーム等の苛酷
な条件下でも常に安定した電気的特性？維持発揮するこ
とのできるＳｉＣ薄膜サーミスタを提供することができ
ることとなる。Effect: Due to this tl formation, the S-OAl1 film is coated with S from above.
It must be completely covered with a SiC protective glass layer that has a larger area than the iC thin film, and the lead wires connected to the lead wire extraction electrode can be covered with lead wire reinforcing glass from above. Therefore, even if a crack occurs along the lead wire due to the difference in thermal expansion coefficient between the lead wire and the glass for reinforcing the lead wire, the crack will not reach the SiC protective glass layer.
Since the C4 film can maintain a state completely covered with SiC protective glass, its electrical properties always remain stable even under harsh conditions such as boiling and steam. This means that it is possible to provide a SiC thin film thermistor that can maintain its performance.
実施例
本発明の一実施例による５ｉＣＲＩＩＩサーミスタを、
図面ヲ泰照しながら説明する。Embodiment A 5iCRIII thermistor according to an embodiment of the present invention is
I will explain while referring to the drawings.
第１図に示すように、アルミナ基板７の上に、熱安定性
に優れたＰｔ −Ａｕペーストにて一対の対向電極８４
，８ｂを形成した後、リード線取り出し部電極９ａ＋
９ｂを除く前記対向電極９Ｎ、８ｂが形成されている
アルミナ基板７上に、基板７の端部より内側にＳｉＣ薄
膜１ｏをスパッタリングにより形成し感温抵抗体とする
。次いで、このＳｉＣ薄膜１Ｑの面積より更に大きな面
積でＳｉＣ保護用ガラス層１１？スクリーン印刷により
塗布、焼付して形成し、５ｉ（Ｊ９膜１０ｉＳｉＣ保護
用ガラス１１にて完全に被覆する。更に、前記リード線
取り出し部電極９１．９ｂ上にリード線１２！Ｌ、１２
ｂを溶接にて接続した後、このリード線取り出し部ｅ
ＩＪ−ド線補強用ガラス１３Ｊ１３ｂで塗布。As shown in FIG. 1, a pair of opposing electrodes 84 are made of Pt-Au paste with excellent thermal stability on the alumina substrate 7.
, 8b, the lead wire extraction portion electrode 9a+
On the alumina substrate 7 on which the counter electrodes 9N and 8b except 9b are formed, a SiC thin film 1o is formed by sputtering inside the edge of the substrate 7 to form a temperature-sensitive resistor. Next, a SiC protective glass layer 11 is formed with an area larger than that of the SiC thin film 1Q. It is formed by coating and baking by screen printing, and is completely covered with 5i (J9 film 10i SiC protective glass 11. Furthermore, lead wires 12!L, 12 are formed on the lead wire extraction portion electrode 91.9b.
After connecting b by welding, this lead wire extraction part e
Coated with IJ-do wire reinforcing glass 13J13b.
焼付けることにより被覆して構成される。It is constructed by coating by baking.
ここで、アルミナ基板は他のセラミック絶縁基板でもよ
く、また対向電極は熱安定性に優れた金属ペーストで形
成されればよいものである。Here, the alumina substrate may be any other ceramic insulating substrate, and the counter electrode may be formed of a metal paste with excellent thermal stability.
発明の効果
以上のように本発明によれば、ＳｉＣ薄膜はガラス層で
完全に被覆されているため、煮沸、スチーム等の苛酷な
条件下でも水分がＳｉＣ％膜部に浸入しないため、抵抗
値の異常低下を起こすことのない極めて安定した電気的
特性を維持発揮するＳｉＣ薄膜サーミスタを得ることが
できる。更に、リード線接続部−１ｄ、 ＳｉＣ保護用
ガラス層とは分離してリード線補強用ガラスでリード線
を被覆しているため、熱膨張係数の違いによりリード線
補強用ガラスにリード線に沿ってクラックが発生したと
しても、そのクランクはＳｉＣ保護用ガラス層には到達
しないため、ＳｉＣ薄膜はＳｉＣ保護用ガラス層にて完
全に被覆された状態を維持することができるため、同様
の効果を発揮することができる０Effects of the Invention As described above, according to the present invention, since the SiC thin film is completely covered with a glass layer, moisture does not penetrate into the SiC film part even under severe conditions such as boiling and steam, so that the resistance value is reduced. It is possible to obtain a SiC thin film thermistor that maintains and exhibits extremely stable electrical characteristics without causing an abnormal decrease in . Furthermore, since the lead wires are covered with the lead wire reinforcing glass separately from the SiC protective glass layer at the lead wire connection part-1d, the lead wire reinforcing glass is coated along the lead wires due to the difference in thermal expansion coefficient. Even if a crack occurs, the crack will not reach the SiC protective glass layer, so the SiC thin film can remain completely covered with the SiC protective glass layer, so the same effect can be achieved. 0 that can be demonstrated
第１図は本発明の一実施例による５ｉＣ４９膜サーミス
タを示す斜視図、第２図は従来のＳ工Ｃ薄膜サーミスタ
を示す斜視図である。
７・・・・・・セラミック絶縁基板（アルミナ基板）、
８２Ｌ、８ｂ・・・・・・対向電＠Ｌ（Ｐｔ−Ａｕ対向
電極）、９ａ、９ｂ・・・・・・リード線取り出し部電
極、１０・・・−−−ＳｉＣ７％１７膜、１１・・・・
・・ＳＩＣ保獲用ガラス層、１２ａ。
１２ｂ・・・・・・リード！、１３ ｚ、 １３ ｂ
−・・−・−リード線補強用ガラス０FIG. 1 is a perspective view showing a 5iC49 film thermistor according to an embodiment of the present invention, and FIG. 2 is a perspective view showing a conventional S-C thin film thermistor. 7...Ceramic insulating substrate (alumina substrate),
82L, 8b...Counter electrode @L (Pt-Au counter electrode), 9a, 9b...Lead wire extraction part electrode, 10...---SiC7%17 film, 11. ...
...Glass layer for SIC retention, 12a. 12b...Lead! , 13 z, 13 b
−・・−・−Glass for reinforcing lead wire 0
Claims (1)
トで一対の対向電極を形成し、この上にＳｉＣの薄膜を
形成し、さらにリード線取り出し部電極を除く前記対向
電極上に形成したＳｉＣ薄膜をそれより大きな面積を有
するＳｉＣ保護用ガラス層で完全に被覆し、更に前記リ
ード線取り出し部電極にリード線を接続し、このリード
線取り出し部をリード線補強用ガラスで被覆し補強した
ことを特徴とするＳｉＣ薄膜サーミスタ。A pair of opposing electrodes is formed on a ceramic insulating substrate using a metal paste with excellent thermal stability, a thin SiC film is formed on this, and the SiC thin film formed on the opposing electrodes except for the lead wire extraction portion electrode is formed. It is characterized by completely covering the SiC with a SiC protective glass layer having a larger area, further connecting a lead wire to the lead wire extraction portion electrode, and covering and reinforcing this lead wire extraction portion with a lead wire reinforcing glass. SiC thin film thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1513286A JPS62173703A (en) | 1986-01-27 | 1986-01-27 | Sic thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1513286A JPS62173703A (en) | 1986-01-27 | 1986-01-27 | Sic thin film thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62173703A true JPS62173703A (en) | 1987-07-30 |
Family
ID=11880294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1513286A Pending JPS62173703A (en) | 1986-01-27 | 1986-01-27 | Sic thin film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62173703A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200192A (en) * | 2008-02-21 | 2009-09-03 | Koa Corp | Method of manufacturing ceramic substrate for chip parts and chip parts |
-
1986
- 1986-01-27 JP JP1513286A patent/JPS62173703A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200192A (en) * | 2008-02-21 | 2009-09-03 | Koa Corp | Method of manufacturing ceramic substrate for chip parts and chip parts |
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