JPS62170047A - Production of optical recording medium - Google Patents

Abstract

PURPOSE:To easily control the compsn. of a recording layer by depositing a metal by evaporation on a substrate in gas contg. a gaseous org. metal thereby forming the recording layer. CONSTITUTION:The org. metal 6 to be gasified includes, for example, the compds. expressed by formulas I, II and III, where M' of the formula denotes Zn, Se, etc.; M<2> denotes Al, Ga, etc.; M<3> denotes Si, Ge, etc.; R<1> denotes an aliphat. group of 1-4 C; R<2>-R<4> denote H and an aliphat. group of 1-4 C. The metal 6 (e.g.: dimethyl selenium) of a bubbler 8 is bubbled and diluted by the inert gas from a vessel 7. The diluted gas is introduced into a vacuum vessel 1 in which, for example, Te is used as a target 2. High-frequency current is then conducted between electrodes 3 and 3' to cause sputtering and to form the recording layer on the substrate 4. The compsn. of the recording layer is controlled with good reproducibility and the recording layer having the high sensitivity and high stability is obtd. according to the above-mentioned method.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention is directed to an optical disc for recording information. a·
The present invention relates to a method of manufacturing optical recording media such as COM>.

[Prior art] Conventional optical recording media and their manufacturing methods involve vacuum deposition of a metal thin film mainly composed of a metal with a low melting point and low thermal conductivity, such as tellurium or bismuth, on a transparent substrate such as glass or plastic. , a recording layer formed by a method such as sputtering is required. These optical recording media use Te and [3i, which are relatively easily oxidized, so to improve oxidation resistance, elements such as Se are simultaneously vapor-deposited, or sputtering is performed using Tergutsu 1~ containing 3e. Se or the like is added to the recording layer by the following method.

Furthermore, in order to adjust the shape of the recorded pits 1- and to suppress the occurrence of cracks in the recording layer, elements such as Pb are added in the same manner as Se.

[Problems to be Solved by the Invention] However, in the case of this conventional technique, there are the following problems. Therefore, when forming a recording layer of a conventional Te-based alloy containing Se, Bi, Pb, etc., vacuum evaporation A
When using the method, it is difficult to perform simultaneous multi-element deposition while controlling the deposition rate of easily sublimed elements such as Se, and the reproducibility of the composition of the recording layer is low and the characteristics are inconsistent, making it difficult to mass-produce. There was a problem. In addition, due to the heating of Targutsu 1~ during sputtering and the difference in sputtering rate with Te, etc., the surface composition changes to Targutsu 1, making it impossible to maintain a constant composition of the recording layer formed, and the recording layer being formed. There were problems such as poor surface smoothness of the layer. Even when composite targs 1 to 1 were used, the influence of sublimation due to heating of the target could not be avoided, and it was difficult to avoid the above-mentioned problem.

Furthermore, even when using ion plate ink, it is difficult to simultaneously perform multi-element deposition of elements that easily sublimate, such as Se, while controlling the deposition rate.

SUMMARY OF THE INVENTION An object of the present invention is to solve these problems and provide a method for manufacturing an optical recording medium with high reproducibility and excellent productivity, which can maintain a constant composition of a recording layer during mass production.

[Means for Solving the Problems] An object of the present invention is to form a recording layer by depositing a metal on a substrate by a vacuum deposition method in an organometallic gas or a mixed gas of this and an inert gas. This is achieved by a method for manufacturing an optical recording medium, which is characterized by a formation process.

The term "organometallic" as used in the present invention refers to a metal that has a carbon-metal bond between at least one atomic group and a metal atom and is vaporizable.

Examples of the organic group include saturated and unsaturated argyl groups. Further, a lower alkyl group is preferred because it is easily vaporized and has good recording layer forming properties, and an alkyl group having 4 or less carbon atoms is particularly preferred.

As metal atoms, group ■B, ■group B, ■group B of the periodic table,
Examples include metals of group V B and group B (including metals and metalloids).Specific examples include 2n, 12.Ga, In
, Ding LSi, Ge, 5nPb, P, As, Sb, B i
, Se, and Dina To'ka are listed.

Among these, Zn, Ga, In, Ge, and Sn.

Pb, As, sb, Bi, and Se are preferable because they are highly effective in improving the storage stability and recording/reproducing characteristics of the recording layer. Zn, Ga, In, Ge, and S can be used because the toxicity of the recording layer can be reduced.
Particularly preferred are n, Pb, Sb, Si, and 3e.

Examples of organometallics include metal alkyls or metal hydrides. For more details, please refer to the following general formula (1
) to (III) are mentioned.

R1-Ml-R” (1) R3' R-M-R(III) ^4 (In the formula, Ml is Zn, 3e, l'-e M2 is α, Ga, In, Tfl, ΔS.

3b, 31 M3 is 3i, Ge, 3n, pb R1 is a lower aliphatic group having 1 to 4 carbon atoms R2, R3, and R4 each represent hydrogen or a lower aliphatic group having 1 to 4 carbon atoms. ) Specifically, the following can be mentioned.

Dimethylzinc, diethylenezinc dimethylselenium, diethyltellurium dimethyltellurium, diethyltellurium trimethylaluminum, 1-ethylaluminum trimethylgallium, 1-ethylgallium 1-limethylindium, triethylindium 1-helimethylthallium trimethylarsenic, ]-ethylarsenic Trimethylantimony, 1~ethylantimonytrimethylbismuthtetramethylsilane, tetraethylsilanethel~lamethylgermane, 1~ethylgermanetetramethyltin, ditraethyltin, tetramethylleaddimethylgermane, trimethylstannane These organic metals are only one type. Only one type may be used, or two or more types may be used.

Dimethylzinc, diethylzinc dimethylselenium, diethyltellurium, 1-limethylgallium, trimethylindium, triethylindium, 1 because it has a large effect of improving the recording characteristics and storage stability of the recording layer and can lower toxicity.
-trimethylantimony, trimethylbismuth, Te1-lamethylgermane, Te1-lamethyltin, Te1-laethyl lead, and the like are preferably used.

The present invention forms a vapor-deposited recording layer using a vacuum deposition method such as sputtering or ion blasting of a metal in such an organic metal gas or a mixed gas of an organic metal gas and an inert gas. .

Examples of the inert gas used in the present invention include known inert gases such as helium, neon, argon, and xenon, and these can be used alone or in combination. It is preferable to use argon because of its high vapor deposition efficiency and low cost. N2 instead of inert gas. C
A less active gas such as O2 can also be used.

The composition of the mixed gas of organometallic gas and inert gas is not particularly limited, but if the volume fraction of organometallic in the mixed gas exceeds 50%, sputtering efficiency may decrease; The surface of Targutsu 1~ may be contaminated. If the Q is less than 5%, the smoothness of the surface of the recording layer may deteriorate. Therefore, the volume fraction of metal in the mixed gas is preferably 0.5 to 50%, more preferably 1% or more and less than 40%.

The method for introducing the organometallic metal may include directly introducing it from the organometallic storage container into the vacuum container while the organometallic storage container is heated, or at room temperature.

In addition, when using a mixed gas of an organic metal and an inert gas, there is a method in which liquid organic metal is bubbled with an inert gas to generate a mixed gas containing saturated vapor of the organic metal, and the mixed gas is introduced. It can be done by The volume fraction of the organic metal in the mixed gas can be controlled quantitatively by the bubbling temperature and the pressure of the inert gas introduced into the bubbler.

Further, it is also possible to dilute the above-mentioned organometallic gas or mixed gas with an inert gas using a gas mixer, etc., and then introduce the diluted gas.

A bubbling method is preferred because the composition of the mixed gas can be controlled quantitatively.

When using the bubbling method described above, it is preferable to use a constant temperature bath in order to maintain the temperature of the bubbler constant, and in order to improve the quantitativeness of the gas flow rate and gas composition,
It is preferable to maintain the bubbler at an arbitrarily set temperature within the temperature range of about 0'C to 100'C.

In the case of bubbling, the amount depends on the type of metal, but 1
It is preferable to use conditions that generate a mixed gas containing an organic metal at a volume fraction of approximately 30% to 30%, since the composition of the mixed gas is stabilized.

In the case of sputtering, Ti is used as the metal material for materials 1 to 1 used for forming the recording layer of the present invention.

V, Cr, Mn, Fe, Co, Ni, Cu, Zn
.

Ga, AD, Si, Ge, Zr, Nb, Mo, Pd
, Rh, Ag, Cd, In, Sn, Sb, Te.

Any metal can be used as long as it can be sputtered, such as Ta, W, Pt, Au, Pb, etc., and the above elements can be used alone or in combination of two or more.

In addition to the above metals, a combination of Bi can also be used. When using an alloy target, it is necessary that the target has a melting point that does not melt during sputtering, and preferably has a melting point of about 200'C or higher.

Metals used when forming the recording layer by ion blating include Ti, V, and Cr.

Mn, Fe, Co, Ni, Cu, Zn,
Ga, HaQ, Si, Ge, Mo, Pd, Ag, Cd, i
n.

Any metal can be used as long as it can be ion-blated, such as 3n, 3b, 3i, Te, Pt, AU, and Pb, and the above metals can be used alone or in combination of two or more.

When the recording layer formed by the method of the present invention is used as a recording medium using a semiconductor laser, it is desirable that the melting point of the alloy formed dispersed in the recording layer is about 700'C or less, and Zn, in, It is preferable to use metals such as 3n, 3b, Te, and pb, and alloys containing these as main components.

The metals contained in the alloy in the recording layer include Ge, T
i, V, Ni, Cu, Ga, AQ, Au
is preferable because it increases the stability of the recording layer.

As the substrate in the present invention, plastic, glass,
A material similar to a conventional recording medium such as Au may be used. For the purpose of avoiding the influence of dust by recording from the substrate side using convergent light, it is preferable to use a transparent material as the substrate. The above materials include polyester resin,
Acrylic resin, polycarbonate resin, epoxy resin,
Examples include polyolefin resins and styrene resins.

Since it is easy to mold a substrate with a low birefringence index, polymethyl methacrylate-1, polycarbonate, and epoxy resin are preferably used.

Although the thickness of the substrate is not particularly limited, it is practically 10 microns or more and 5 mm or less. 10
If it is less than a micron, it will be easily affected by dust even when recording with convergent light from the substrate side, and if it exceeds 5 mm, it will be impossible to increase the numerical aperture of the objective lens when recording with convergent light, and the pit 1 Since the size increases, it becomes difficult to increase the recording density.

The thickness of the recording layer of the recording medium of the present invention can range from 100 angstroms to 1 micron. In order to obtain a high recording sensitivity of 1q, it is preferable that the thickness is 100 angstroms or more and 1000 angstroms or less and 1 q or less.

The recording layer can be provided on one or both sides of the substrate. Further, the recording layer can be formed on a substrate on which a protective layer for the recording layer has been applied in advance. A protective layer can also be provided on top of the recording layer.

The substrate may be flexible or rigid. The flexible substrate can be used in the form of a tape or sheet.

The rigid substrate can be used in the form of a card or a circular disk.

Examples of the structure of the recording medium include a structure in which a single plate or two substrates are bonded together, an air switch structure, and an air incident structure.

Further, the light irradiated onto the recording medium of the present invention may be any light such as laser light or slopping light, as long as it can thermally deform the recording layer, form openings, or form recesses.

In particular, it is preferable to use a semiconductor ray because the ray light can be easily modulated.

Thermal deformation, formation of an aperture, or recess means that as a result of the formation of the deformed aperture or recess, there is an easily detectable difference in optical properties, such as transmittance and reflectance, from the undeformed region. Any deformation, opening, or recessed portion may be used.

Optical recording media manufactured by the method of the present invention include optical disks, optical tapes, optical cards, optical floppy disks, microfiche, and media for Rayleigh COM.

Hereinafter, a method for forming the recording layer will be explained based on the drawings.

FIG. 1 shows an example of a recording layer forming apparatus of the present invention. In FIG. 1, 1 is a vacuum vessel, 2 is a sputtering target plate 1, 3 is an upper electrode, 3' is a lower electrode, 4
is a substrate, 5 is a high frequency power source, 6 is an organic metal, 7 is an inert gas container such as argon, 8 is a bubbler, 9 is a mixer, 1
0 indicates a valve. The vacuum container 1 is heated to 1 o-5r using a known evacuation pump (not shown).
After evacuating to high vacuum from orr to 1Q-6rorr,
Open the valve 10 and introduce the organic metal 6 in the bubbler from the inert gas container 7 such as argon gas into the bubbler 8 and bubble it to create a mixed gas, and adjust the valve 10 to introduce the mixed gas into the vacuum container 1. do. The method for preparing the mixed gas is not limited to bubbling with an inert gas, but it is also possible to mix the vaporized organometallic gas and inert gas by heating the organometallic material from outside the container and allowing it to vaporize. You can also do something like this. In addition, if there is only metal gas,
It is also possible to introduce the gas directly from a commercial gas container (not shown). The degree of vacuum within the vacuum container 1 can be adjusted by appropriately opening and closing the valve 10. The degree of vacuum during sputtering is from 10-1 Torr to 10-3T.
This can be done with orr. A pressure higher than 1Q-1 Torr may deteriorate the surface condition of the recording layer. At pressures lower than 1Q-3 Torr, discharge is not stable. Preferably, 10-3 Torr or more, 10-'Torr
Stay below rr. Further, the flow rate of the mixed waste to be introduced can be adjusted by appropriately opening and closing the valve 10. The flow rate of the mixed gas is 0.01, although it depends on the type of organic metal.
to 100 cc/m1n (converted to 1 atm O'C), and is arbitrarily set depending on the target content in the recording layer.

Furthermore, it is of course possible to make the recording layer contain a plurality of component metal elements by using a plurality of types of mixed gases as necessary. Sputtering can be performed by known high frequency Magne 1 Heron sputtering. Sputtering target layer 1 and upper electrode 3 and lower electrode 3
A high frequency current is applied from the high frequency electrode 5 to perform sputtering to form a recording layer on the substrate. The frequency of high frequency is not limited to 13 in the industrial band.
．． 56MHz is commonly used. The high frequency power is not particularly limited;
tt is used. That is, 0.28Watt/C
Sputtering is performed with a power of about 7 Watt/CM 2 to 1 M 2 . When the high frequency power is larger than the above, the substrate may be deformed in some cases, and when the high frequency power is smaller than the above, the discharge tends to become unstable. The sputtering method is not particularly limited to the high frequency magnetron sputtering method, and a known direct current sputtering method or even a bias weight method may be used. Furthermore, not only the two-pole method but also the three-pole and quadrupole methods can be used.

The process of forming the recording layer will be described below using an example in which Te is sputtered in a mixed gas of dimethyl selenium and argon gas.

When tellurium is sputtered, dimethylselenium dissociates in the discharge plasma to generate hydrocarbon radicals and various organic selenium radicals. According to the production method of the present invention, since an organic metal that easily generates radicals is used as a raw material, this reaction process proceeds easily.

It is estimated that these radicals generate sputtered Te atoms or ions, organic radicals, and organometallic radicals containing a Te-selenium bond. Further, these organometallic radicals and hydrocarbon radicals are polymerized and crosslinked to form an organometallic polymer containing hydrocarbon groups such as alkyl groups and aryl groups, and carbon and selenium as constituent elements on the substrate. In addition, Ding and selenium are
Some metal atoms are deposited on the substrate as they are, and as a result, a recording layer in which Te and Relene are dispersed in the organometallic plasma polymer is formed on the substrate.

FIG. 2 shows an example of an apparatus for forming a recording layer according to the present invention by ion blating. The vacuum device 11 was preliminarily heated to 1X 10'Torr using an exhaust pump (not shown).
After evacuating to a high vacuum, the valve 12 was opened, and the gas was flowed from the container 13 containing the organometallic gas to increase the vacuum degree from 1 to 'IQ-4T.

Let it be rr. The organometallic gas may be filled in a container in advance as described above, or may be a mixed gas bubbled and vaporized with an inert gas as shown in FIG.

A pot for evaporating metal in advance] 4, an electrode coil 15, and a substrate 16 are arranged in the vacuum apparatus, and a high frequency current of 13°5 MHz is applied from an electrode 17 to the electrode coil 15, one end of which is grounded. In the case of a high-voltage application type with an open electrode end, substances sputtered from the electrode, the inner wall of the container, etc. will mix into the recording layer.
A large current type is preferred. Further, a container 19 containing an inert gas having a valve 18 may be provided to dilute the organometallic gas or a mixed gas of the above gas and an inert gas.

Further, the pressure within the vacuum device 11 of the organometallic gas or a mixed gas of this and an inert gas is not particularly limited, but is preferably 1 to 10'Torr.

If the gas pressure is higher than 1 TOrr, the formation speed of the recording layer will be slow, and the smoothness and sphericity of the recording layer may deteriorate, and if the gas pressure is lower than 10'Torr, the discharge may not be stable. There is.

Particularly preferred pressure is 10'Torr to 10-3 Torr.
r, and within this range, the surface condition of the recording layer is good and a uniform recording layer can be formed.

Below, T in a mixed gas of dimethyl selenium and argon gas
The formation process of the recording layer will be explained using the case of ion blating e as an example.

When tellurium is placed in the crucible 14 and heated and ion-blated to avoid evaporation, dimethylselenium undergoes [1] in the discharge plasma to generate radicals of hydrocarbon groups and various organic selenium radicals. According to the manufacturing method of the present invention,
Since an organic metal that easily generates radicals is used as a raw material, this reaction process progresses easily. It is estimated that these radicals generate sputtered Te atoms or ions, organic Te radicals, and organic metal radicals containing a Te-t lene bond. Further, these organometallic radicals and hydrocarbon radicals are polymerized and crosslinked to form an organometallic polymer containing hydrocarbon groups such as alkyl groups and aryl groups, Te, and selenium as constituent elements on the substrate. In addition, T(!) and selenium may be deposited on the substrate as metal atoms, resulting in a recording layer on the substrate in which Te and selenium are dispersed in the metal plasma polymer. formed on a substrate.

The ratio of metal in the recording layer according to this manufacturing method can be arbitrarily set depending on the gas pressure, discharge power, evaporation rate from the crucible, etc. Furthermore, since metal is used, sublimable metals whose evaporation rate is difficult to control can also be incorporated into the recording layer with good reproducibility.

Of course, a recording layer containing multiple metal components can be formed using a plurality of types of organic metals.

[Example] Hereinafter, the present invention will be specifically explained based on Examples.

Example 1 Based on the manufacturing method of the present invention shown in FIG.
A recording layer was formed on an acrylic substrate with a diameter of 12.5 cm under the following procedure and conditions to produce an optical recording medium.

Tellurium with a purity of 99.99% was used as a sputtering target. Dimethyl selenium with a purity of 97% was bubbled with argon gas in a stainless steel bubbler, and then diluted with argon gas to prepare an argon mixed gas containing dimethyl selenium at a volume fraction of 5.0%. next,
The vacuum container was evacuated in advance to an internal pressure of 2 x 10-6 Torr, and then the mixed gas was introduced! 10.6cc/min
(converted to 1 atm O℃), and the pressure inside the tank was 2 x 10
-2Torr, high-frequency magnetron sputtering was performed with high-frequency manual power of 10 watts, and the film thickness was 50 mm.
A recording layer having a thickness of 0 angstroms and containing 5 atomic % of Se relative to Te was formed. Next, this optical recording medium was exposed to two semiconductor laser beams with an output of 6 milliwatts and a wavelength of 830 nm modulated at a linear velocity of 1°0 m/sec and a frequency of 1 MH2.
When the spot was converged to a micron diameter and recorded from the substrate side, clear pits were recorded.

When this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer remained transparent even after 40 hours.
No pinholes were observed. Further, no decrease in recording sensitivity was observed.

Example 2 In the same manner as in Example 1, a recording layer was formed on an acrylic substrate under the following procedure and conditions to produce an optical recording medium.

As sputtering targetera 1~, spinning wheel degree 99°99
% tellurium was used. Tetramethyltin with a purity of 97% was bubbled with argon gas in a stainless steel bubbler, and then diluted with argon gas to prepare a lavatramethyltin-argon mixed gas. Next, the vacuum vessel is evacuated in advance to an internal pressure of 2 x 10-6 Torr, and then the mixed gas is flowed at m12, 5cc/min (1
(atmospheric pressure (O'C conversion)), and the pressure inside the tank is 2 x 10
'Torr, high frequency human power 1Q QWatt. Perform high frequency magnetron sputtering with a film thickness of 50
A recording layer of the present invention having a thickness of 0 angstroms was formed. Next, this optical recording medium was exposed to two semiconductor laser beams similar to those in Example 1.
When the spora converged to a diameter of micron 1~ and was recorded from the substrate side, clear pips 1~ were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 3 In the same manner as in Example 1, a recording layer was formed on an acrylic substrate under the following procedure and conditions to produce an optical recording medium.

Tellurium with a purity of 99.99% was used as a sputtering target. After bubbling 97% pure tetramethylgermane with argon gas in a stainless steel bubbler, diluting it with argon gas,
．． An argon mixed gas containing 0% volume fraction was prepared. Next, the vacuum container is preliminarily adjusted to an internal pressure of 2 x 10
-6 Torr and then the mixed gas at a flow rate of 15.
Occ/m1n (1 atm o'c conversion) was introduced, and the pressure inside the tank was 2 x 10-2T.

As rr, high-frequency magneto-long sputtering was performed using high-frequency manual power of 1QQWatt to form a recording layer of the present invention having a film thickness of 500 Å and 1-Roam.

Next, when this optical recording medium was recorded from the substrate side using the same semiconductor radar light as in Example 1 focused on the diameter of the 2 micron spora, clear pits were recorded.

When this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer remained transparent for 400 hours.
No pinholes were observed. Further, no decrease in recording sensitivity was observed.

Example 4 The volume fraction of dimethyl selenium in the mixed gas of Example 1 was reduced to 1
．． A recording layer was formed under the same conditions as in Example 1, except that the content was 5%, and an optical recording medium was obtained. Next, this optical recording medium was recorded from the substrate side by converging the same semiconductor radar light as in Example 1 onto the diameter of the 2 micron spora.
was recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 5 A recording layer was formed under the same conditions as in Example 2, except that the volume fraction of tetramethyltin in the mixed gas in Example 2 was changed to 1.5%, and an optical recording medium was obtained. Next, when this optical recording medium was recorded from the substrate side using the same semiconductor radar light as in Example 1 focused to a spot diameter of 2 microns, clear pits were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 6 The volume fraction of tetramethylgermane in the mixed gas of Example 3 was set to 1.5%, a recording layer was formed under the same conditions as in Example 3, and the optical recording medium was 1q. Next, when this optical recording medium was recorded from the substrate side by converging the semiconductor seer light of Example 1 to a spot diameter of 2 microns, clear pitches 1 to 1 were recorded.
was recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example γ Based on the manufacturing method of the present invention shown in FIG. 2, the thickness was 1.2 m.
An optical recording medium was produced by forming a recording layer on an acrylic substrate of No. m under the following procedure and conditions.

Tetramethyltin with a purity of 97% was bubbled with argon gas in a stainless steel bubbler, and then diluted with argon gas to prepare an argon mixed gas containing tetramethyltin at a volume fraction of 5.0%. Next, the vacuum container is evacuated in advance to an internal pressure of 2X 10-6 Torr, and then the mixed gas is supplied at a flow rate of 12 cc/min (1 atm O
℃ conversion), and the pressure inside the tank was increased to 2 x 10' Torr.
A recording layer of the present invention having a film thickness of 600 angstroms was formed by performing high frequency ion blating with high frequency manual power of 100 Wa11 as r. Next, when this optical recording medium was recorded from the substrate side using the same semiconductor radar light as in Example 1 focused to a spot diameter of 2 microns, clear pips 1 to 1 were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 8 In the same manner as in Example 7, a recording layer was formed on an acrylic substrate under the following procedure and conditions to produce an optical recording medium.

Dimethylpyrene with a purity of 97% was bubbled with argon gas in a stainless steel bubbler, and then diluted with argon gas to prepare an argon mixed gas containing dimethylpyrene at a volume fraction of 5.0%.

Next, make sure to tighten the vacuum container and make sure that the pressure inside the tank is 2×10'To.
rr, then flow the mixed gas at 112cc/m1
n (converted to 1 atm O'C), and the pressure inside the tank was increased to 2X 1
High frequency ion blating was performed at a pressure of 0-3 Torr and a high frequency manual power of 100 Watts to form a recording layer of the present invention having a film thickness of 600 Å to 600 Å.

Next, when this optical recording medium was recorded from the substrate side by focusing the same semiconductor laser beam as in Example 1 on the diameter of the slot 1 to 2 microns, clear pips were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 9 In the same manner as in Example 7, a recording layer was formed on an acrylic substrate under the following procedure and conditions to produce an optical recording medium.

After bubbling 97% pure Te1-lamidilene gelmane with argon gas in a stainless steel bubbler.

Dilute with argon gas to prepare 5%
．． An argon mixed gas containing 0% volume fraction was prepared. Next, the vacuum container is preliminarily adjusted to an internal pressure of 2 x 10
-6 Torr and then flow the mixed gas m 12
cc/min < 1 atm (O'C exchanger), the tank internal pressure was set to 2 x 10' Torr, and high frequency ion blating was performed using high frequency manual power of 1 QQ Watt. A recording layer was formed. Next, when this optical recording medium was recorded from the substrate side using the same semiconductor laser beam as in Example 1 focused to a spot diameter of 2 microns, clear pits were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 10 A recording layer was formed to create an optical recording medium using the same procedure and conditions as in Example 7, except that the volume fraction of tetramethyltin in the mixed gas in Example 7 was changed to 1.5%, A recording layer of the present invention having a film thickness of 600 angstroms was formed. Next, when this optical recording medium was recorded from the substrate side using the same semiconductor laser beam as in Example 1 focused to a spot diameter of 2 microns, clear pits were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 11 The volume fraction of dimethylpyrene in the mixed gas of Example 7 was 1
．． An optical recording medium was produced by forming a recording layer using the same procedure and conditions as in Example 7, except that the concentration was 5%, and a recording layer of the present invention having a film thickness of 600 angstroms was formed. Next, when this optical recording medium was recorded from the substrate side using the same semiconductor laser beam as in Example 1 focused to a spot diameter of 2 microns, clear pits were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

Example 12 A recording layer was formed and an optical recording medium was formed using the same procedure and conditions as in Example 7, except that the volume fraction of Te1-ramethylgermane in the mixed gas in Example 7 was changed to 1.5%. A recording layer of the present invention having a film thickness of 600 angstroms was formed. Next, when this optical recording medium was recorded from the substrate side by converging the same semiconductor laser beam as in Example 1 onto a 2 micron diameter spot 1, clear pits were recorded.

Further, when this optical recording medium was left in an environment of 70 degrees Celsius and 85% relative humidity, the recording layer did not become transparent and no pinholes were observed even after 400 hours. Further, no decrease in recording sensitivity was observed.

[Effects of the Invention] The present invention uses a manufacturing method in which a recording layer is formed by vacuum deposition of a metal in an organometallic gas or a mixed gas of an organometallic gas and an inert gas. It has excellent effects such as:

(1) Compared to conventional sputtering method and vacuum evaporation method,
It has good reproducibility and allows the composition of the recording layer to be controlled.

(2) A recording layer with high recording sensitivity and high stability can be formed.

(3) High adhesion to the substrate, allowing formation of a recording layer with a smooth surface.

(4) With sputtering or vacuum evaporation, even metals that are difficult to form into a film can be easily included as a component of the recording layer.

(5) A recording layer with a complex multicomponent composition can be easily formed.

(6) A recording layer having a composition that is difficult to produce in the sputtering target layers 1 to 1 can be easily formed.

[Brief explanation of drawings]

FIG. 1 and FIG. 2 are diagrams each showing an example of an optical recording medium forming apparatus of the present invention. 1: Vacuum container 2: Sputtering targeter 1-3: Upper electrode 3': Lower electrode 4: Substrate 6: Organometallic 8: Bubbler-11 = Vacuum device 12: Valve 13: Organometallic gas storage container 14: Melting point 15: Electrode coil 16 two boards 17: Power supply

Claims (1)

[Claims] (1) A method for producing an optical recording medium, which comprises forming a recording layer by depositing a metal on a substrate by a vacuum deposition method in an organometallic gas or a mixed gas of this and an inert gas. .