JPH02158936A - Production of information recording medium - Google Patents

Production of information recording medium

Info

Publication number
JPH02158936A
JPH02158936A JP31293688A JP31293688A JPH02158936A JP H02158936 A JPH02158936 A JP H02158936A JP 31293688 A JP31293688 A JP 31293688A JP 31293688 A JP31293688 A JP 31293688A JP H02158936 A JPH02158936 A JP H02158936A
Authority
JP
Japan
Prior art keywords
recording
film
films
sputtering
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31293688A
Other languages
Japanese (ja)
Inventor
Isao Morimoto
勲 森本
Masaru Suzuki
勝 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP31293688A priority Critical patent/JPH02158936A/en
Publication of JPH02158936A publication Critical patent/JPH02158936A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To suppress the deterioration in characteristics by repetition and to improve corrosion resistance by forming films by using a gas consisting of He or Ne and by sputtering in the case of producing the recording medium provided with a recording film and the protective films on a substrate. CONSTITUTION:The protective films 2, 4 and the recording film 3 are provided on the substrate 1 to form the recording medium. The gas consisting of the He or Ne is used and the sputtering is executed to form the films in the production of this medium. The holes in the films are removed and the density of the films are improved if the gaseous mixture composed of the He and Ne is used. The change in the thermal properties by repetition is, therefore, lessened and the deterioration in the characteristics is drastically suppressed. Since the dense films are formed, the infiltration of moisture and oxygen into the films is prevented and the corrosion resistance is improved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、光学的手段で情報を記録・再生・消去できる
情報記録媒体の製造法に関するものであり、更に詳しく
言えば、記録・消去の繰り返し特性に優れた情報記録媒
体の製造法に関するものである。
[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a method for manufacturing an information recording medium that can record, reproduce, and erase information by optical means. The present invention relates to a method for manufacturing an information recording medium with excellent repeatability.

(従来の技術) 近年、情報量の増大に伴ないレーザー光線を利用して高
密度な情報の記録・再生を行うことのできる光ディスク
の応用が盛んに行われている。光ディスクには、−度の
み記録可能な追記型と記録した情報を消去し何度も使用
可能な書換え可能型がある。追記型光ディスクは、主と
して文古や画像の永久保存ファイルとして既に用いられ
ている。
(Prior Art) In recent years, as the amount of information has increased, optical discs that can record and reproduce high-density information using laser beams have been widely used. There are two types of optical discs: a write-once type, which allows recording only once, and a rewritable type, which allows recorded information to be erased and used many times. Write-once optical discs are already used primarily as permanent storage files for ancient literature and images.

しかし、永久保存が必要な用途以外では情報の書換えを
行なうことの出来る書換え可能型光ディスクが要望され
ている。このような情報記録媒体において、書換え可能
な繰り返し回数は用途によって異なるが少なくとも10
0回以上は必要とされる。特にコンピューターの外部メ
モリに用いる場合は10h回の繰り返し回数が必要とさ
れている。
However, for applications other than those that require permanent storage, there is a demand for a rewritable optical disc that allows information to be rewritten. In such an information recording medium, the number of repetitions that can be rewritten varies depending on the application, but is at least 10 times.
Zero or more times are required. In particular, when used as an external memory for a computer, a repetition rate of 10h is required.

書換え可能型光ディスクとしては、磁化方向によって反
射光の偏光面に差が生じることを利用して情報の再生を
行う光磁気方式と結晶構造の違いによって反射率や透過
率が異なることを利用して情報の再生を行う相変化方式
がある。
Rewritable optical discs use the magneto-optical method, which uses the difference in the polarization plane of reflected light depending on the magnetization direction to reproduce information, and the magneto-optical method, which uses the fact that reflectance and transmittance differ depending on the crystal structure. There is a phase change method for reproducing information.

上記のいづれの方式においても、次に示す2つの共通点
がある。第1点は、情報の記録及び消去をレーザー光に
よる記録膜の加熱により行う、いわゆるヒートモード記
録であることである。光磁気方式の場合は、記録膜の加
熱と共に外部磁場を印加して記録膜の磁化方向を変化さ
せることにより情報の記録及び消去を行う。一方、相変
化方式の場合は、加熱時の最高到達温度と冷却時の冷却
速度によって結晶構造を変化させることにより情報の記
録及び消去を行う。いづれの場合も記録膜の加熱により
記録・消去を行うヒートモード記録であることに変りは
ない。第2の共通点は、用いる記録媒体の構成に関する
ものである。すなわち、いづれの方式においても用いる
記録媒体は材質は異なるが、少なくとも基板、記録膜及
び誘電体からなる保護膜により構成され、保護膜は記録
膜に接して設けられているという点である。場合によっ
ては反射層を設けることもある。代表的な層構成として
は、第1図に示すごとく基板1上に保護膜2、記録膜3
、保護膜4を順次積層したものをあげることが出来る。
All of the above methods have the following two points in common. The first point is that information is recorded and erased by heating the recording film with laser light, which is so-called heat mode recording. In the case of the magneto-optical method, information is recorded and erased by heating the recording film and applying an external magnetic field to change the magnetization direction of the recording film. On the other hand, in the case of the phase change method, information is recorded and erased by changing the crystal structure depending on the maximum temperature reached during heating and the cooling rate during cooling. In either case, it is still heat mode recording in which recording and erasing is performed by heating the recording film. The second common point relates to the structure of the recording medium used. That is, the recording medium used in each method is made of different materials, but it is composed of at least a substrate, a recording film, and a protective film made of a dielectric material, and the protective film is provided in contact with the recording film. In some cases, a reflective layer may be provided. As shown in FIG. 1, a typical layer structure includes a protective film 2 and a recording film 3 on a substrate 1.
, protective films 4 are sequentially laminated.

ここで保護膜は、繰り返し記録・消去時における基板の
熱変形や記録膜の変形を防止すると共に、記録膜の酸化
等を防ぐ役割を果す。特に相変化方式の場合は、記録ま
たは消去時に記録膜をいったん融点以上の高温に加熱す
るために耐熱性の保護膜が要求される。
Here, the protective film serves to prevent thermal deformation of the substrate and deformation of the recording film during repeated recording and erasing, as well as to prevent oxidation of the recording film. In particular, in the case of a phase change method, a heat-resistant protective film is required in order to heat the recording film to a high temperature above its melting point during recording or erasing.

以上の2つの共通点から、いづれの方式においても用い
る保護膜としては少なくとも次のような特性が要求され
る。
From the above two common points, the protective film used in either method is required to have at least the following characteristics.

■ 耐熱性 記録及び消去における加熱時に熱…傷を生じないこと ■ 低熱伝導性 発熱した熱の放散が多く加熱に高いレーザーパワーを要
しないようにある程度熱伝導率が低いこと ■ 耐熱サイクル性 記録と消去の繰り返しにおいて、熱物性、機械物性等の
変化が極力小さいこと ■ 低透湿性 記録膜の腐食を防ぐために透湿性が低いこと特に相変化
方式の場合は、記録膜の加熱後の冷却速度により出来る
結晶構造が異なることと、記録または消去時に記録膜を
いったん融点以上の高温に加熱するために耐熱性と共に
耐熱サイクル性に優れた保護膜が要求される。
■ Heat resistance: No heat damage occurs during heating during recording and erasing ■ Low thermal conductivity: Low thermal conductivity to a certain extent so that generated heat is dissipated and high laser power is not required for heating ■ Heat resistance: Recording and erasing Changes in thermal properties, mechanical properties, etc. should be as small as possible during repeated erasing ■ Low moisture permeability Low moisture permeability to prevent corrosion of the recording film Particularly in the case of a phase change method, depending on the cooling rate after heating the recording film The resulting crystal structures are different, and since the recording film is once heated to a high temperature above its melting point during recording or erasing, a protective film with excellent heat resistance and heat cycle resistance is required.

上記特性のうち、■及び■は主に使う材料によって左右
されるが、■及び■は材料と共に成膜法に大きく依存す
る。
Among the above characteristics, (1) and (2) mainly depend on the material used, while (2) and (2) depend largely on the film forming method as well as the material.

また、記録または消去時に記録膜をいったん融点以上に
加熱し溶融させる場合は、記録膜自体の耐熱サイクル性
も要求される。
Furthermore, if the recording film is once heated above its melting point and melted during recording or erasing, heat cycle resistance of the recording film itself is also required.

(発明が解決しようとする問題点) −船釣に記録膜や保護膜は蒸着法やスパッタ法等によっ
て成膜することが可能であるが、スパッタ法が量産に適
している。スパッタ法に用いる放電ガスとしては、スパ
ッタ率やコストの点でArガスが最もよ(用いられる。
(Problems to be Solved by the Invention) - Recording films and protective films for boat fishing can be formed by vapor deposition, sputtering, etc., but sputtering is suitable for mass production. As the discharge gas used in the sputtering method, Ar gas is most preferred in terms of sputtering rate and cost.

しかし従来のArガスを用いたスパッタ法で成膜した保
護膜を使った場合、記録・消去の繰り返しを多数回行う
と特性が劣化し、実用に供し得ないという問題点があっ
た。特に相変化方式の記録媒体においては、繰り返しに
よる特性劣化は深刻な問題であった。具体的には、記録
・消去を繰り返していくと消去が不十分となり以前に記
録した信号の消し残りが大きくなってしまったり、或い
はバブルが発生したり開孔するという現象が生じる。
However, when using a protective film formed by the conventional sputtering method using Ar gas, there is a problem that the characteristics deteriorate when recording and erasing are repeated many times, making it impossible to put it into practical use. Particularly in phase change type recording media, characteristic deterioration due to repetition has been a serious problem. Specifically, as recording and erasing are repeated, erasing becomes insufficient, and previously recorded signals remain largely unerased, or bubbles or holes form.

本発明者らはこの原因を調査した結果、記録・消去を繰
り返していくと保護膜が一種の焼結作用により緻密にな
って熱物性が変化してゆ(ものと推察した。特に繰り返
し回数の増加と共に緻密化に伴い熱伝導率が増加し、こ
れにより記録膜がその結晶化に必要な温度以上に保持さ
れる時間が短かくなり、その結果消去が不十分になると
考えられる。
The inventors investigated the cause of this problem and found that as recording and erasing is repeated, the protective film becomes denser due to a kind of sintering effect and its thermophysical properties change. It is thought that the thermal conductivity increases with increasing densification, which shortens the time the recording film is held above the temperature required for its crystallization, resulting in insufficient erasing.

また、上記の繰り返しによる特性劣化と共に、従来のス
パッタ法で成膜した保護膜は、成膜時にArや酸素等の
ガスが膜中に取り込まれるために空゛孔の多い膜となり
、その結果記録膜の腐食防止という点からも十分満足の
いくものではなかった。
In addition to the characteristic deterioration due to the repetition of the above process, the protective film formed by the conventional sputtering method becomes a film with many pores due to gases such as Ar and oxygen being taken into the film during film formation, resulting in recording problems. It was also not completely satisfactory from the viewpoint of preventing corrosion of the membrane.

更に、記録膜中に微少な空孔が存在すると記録・消去の
繰り返しに伴い、空孔同志が合体して大きくなったり、
それが記録膜と基板或いは保護膜との界面に移動してバ
ブル発生や開孔という現象が生じるものと考えられる。
Furthermore, if there are minute holes in the recording film, as recording and erasing are repeated, the holes may coalesce and become larger.
It is thought that the particles migrate to the interface between the recording film and the substrate or the protective film, causing phenomena such as bubble generation and pore formation.

(問題点を解決するための手段) 本発明は、かかる問題点を解決した情報記録媒体の製造
法に関するものであり、基板上に記録膜及び保護膜を設
けた情報記録媒体の製造法において、HeまたはNeか
らなるスパッタガスを用いてスパッタリング法により膜
形成を行うことを特徴とする情報記録媒体の製造法であ
る。
(Means for Solving the Problems) The present invention relates to a method for manufacturing an information recording medium that solves these problems, and in a method for manufacturing an information recording medium in which a recording film and a protective film are provided on a substrate, This method of manufacturing an information recording medium is characterized in that film formation is performed by a sputtering method using a sputtering gas made of He or Ne.

スパッタガスは、lleガスのみ、またはNeガスのみ
でもよいし、Arとの混合ガスであっても良い。
The sputtering gas may be only Ile gas, only Ne gas, or a mixed gas with Ar.

また反応性スパッタを行う場合は、更に酸素や窒素を添
加することが出来る。すなわち金属または半金属のター
ゲットを用いて酸化物や窒化物の保護膜を形成する場合
は、酸素や窒素を添加して反応性スパッタを行う方が成
膜速度が早く量産に適する。以上の方法による膜形成は
、記録膜のみ、或いは保護膜のみに適用してもよい。
Further, when performing reactive sputtering, oxygen or nitrogen can be further added. That is, when forming a protective film of oxide or nitride using a metal or semimetal target, reactive sputtering with addition of oxygen or nitrogen results in a faster film formation rate and is suitable for mass production. Film formation by the above method may be applied only to the recording film or only to the protective film.

保護膜に用いることの出来る材料としては、特に制限は
なく、5iOz、5s3Na 、ZnS 1Mgh等の
金属や半金属の酸化物、窒化物、硫化物及びフッ化物ま
たはこれらの混合物等が広く用いられる。
There are no particular restrictions on the material that can be used for the protective film, and metal or semimetal oxides, nitrides, sulfides, fluorides, or mixtures thereof, such as 5iOz, 5s3Na, and ZnS 1Mgh, are widely used.

記録膜についても特に制限はな(、遷移金属と希土類元
素からなる光磁気用記録膜、TeやSeの合金からなる
相変化用記録膜または有機色素からなる記録膜等が用い
られる。
There are no particular limitations on the recording film either (a magneto-optical recording film made of a transition metal and a rare earth element, a phase change recording film made of an alloy of Te or Se, a recording film made of an organic dye, etc. are used).

(作用) HeまたはNeからなるスパッタガスを用いると、膜中
における空孔が除去され膜の密度が向上するために繰り
返しによる熱物性の変化が小さく、特性劣化を大巾に抑
制出来る。また膜が緻密なために水分や酸素の内部への
浸入を防ぎ、記録膜の腐食防止効果も大きい。更に副次
的に膜の内部応力も軽減でき下地との密着力も向上する
(Function) When a sputtering gas made of He or Ne is used, pores in the film are removed and the density of the film is improved, so that changes in thermal properties due to repetition are small, and property deterioration can be greatly suppressed. Furthermore, the dense film prevents moisture and oxygen from entering the recording film, and has a great effect on preventing corrosion of the recording film. Furthermore, the internal stress of the film is also reduced and its adhesion to the substrate is improved.

実施例 外径130mm、厚さ1.2 mmのポリカーボネート
基板をスパッタ槽にセットし、5 X 10−7Tor
rまで真空排気を行った後、5iOz (100nm)
 、Ge −Te −Sb記録膜(80nm) 、5i
Oz (100nm)の順にスパッタ法により順次膜形
成を行った。各層のスパッタ条件は第1表の如くである
A polycarbonate substrate with a diameter of 130 mm and a thickness of 1.2 mm was set in a sputtering tank and heated at 5 x 10-7 Tor.
After evacuation to r, 5iOz (100nm)
, Ge-Te-Sb recording film (80 nm), 5i
Films were sequentially formed by sputtering in the order of Oz (100 nm). The sputtering conditions for each layer are as shown in Table 1.

第   1   表 比較例として、静ガスのみで全店をスパッタした以外は
実施例と全く同一のサンプルを作製した。
Table 1 As a comparative example, a sample was prepared which was exactly the same as the example except that all the sputtering was performed using static gas only.

これらのディスクを1800rpn+で回転させ、ポリ
カーボネート基板越しに半導体レーザーの光を集光させ
て照射し、以下の評価を行った。
These disks were rotated at 1800 rpm+, and semiconductor laser light was focused and irradiated through the polycarbonate substrate, and the following evaluations were performed.

先づディスク上の直径60mmの所にレーザー光をディ
スク−周分の関連続発光させて初期結晶化を行った。次
に2 MHzのパルス信号を記録した後、C/N比を測
定した。この後、レーザー光をディスク−周分の関連続
発光させて消去動作を行った後、C/N比を測定した。
First, initial crystallization was performed by continuously emitting a laser beam at a location with a diameter of 60 mm on the disk for the circumference of the disk. Next, after recording a 2 MHz pulse signal, the C/N ratio was measured. Thereafter, an erasing operation was performed by continuously emitting a laser beam corresponding to the circumference of the disk, and then the C/N ratio was measured.

以上の記録と消去を繰り返し行った結果を第2図及び第
3図に示す。消去後のC/N比を消し残りとした。
The results of repeating the above recording and erasing are shown in FIGS. 2 and 3. The C/N ratio after erasing was taken as the remaining eraser.

第2図から、比較例では100回の繰り返し以後消し残
りが増加するが、第3図から実施例では104回後もC
/N比、消し残り共に初期と全く変っていないことがわ
かる。
From FIG. 2, in the comparative example, the number of unerased items increases after 100 repetitions, but from FIG. 3, in the example, C
It can be seen that both the /N ratio and the unerased area have not changed at all from the initial stage.

更にこれらのディスクを温度80°C,湿度80%の環
境下に500時間放置した。比較例では、ピンホールが
多数発生しノイズの増加もみられたが、実施例ではピン
ホールの発生はなく、ノイズの増加もみられなかった。
Further, these disks were left for 500 hours in an environment with a temperature of 80°C and a humidity of 80%. In the comparative example, many pinholes were generated and an increase in noise was observed, but in the example, no pinholes were generated and no increase in noise was observed.

また、スパッタガスとしてArとIIeの混合ガスを用
いたが、ArとNeの混合ガスを用いても同様の効果が
得られる。
Further, although a mixed gas of Ar and IIe was used as the sputtering gas, the same effect can be obtained by using a mixed gas of Ar and Ne.

(発明の効果) 以上、述べたように本発明によれば、密度の高い緻密な
保護膜を形成することができ、(1)繰り返しによる特
性劣化が少ない(2)耐腐食性が高い 信頼性の高い情報記録媒体を提供することが出来る。
(Effects of the Invention) As described above, according to the present invention, it is possible to form a dense and precise protective film, and (1) there is little deterioration of characteristics due to repetition (2) there is high reliability with high corrosion resistance. It is possible to provide an information recording medium with high quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による情報記録媒体の構造の一態様を示
す断面図であり、第2図及び第3図はそれぞれ比較例及
び実施例のディスクの記録・消去の繰り返し特性を示す
グラフである。 1・・・基板 2.4・・・保護膜 3・・・記録膜 特許出願人  旭化成工業株式会社 第1因
FIG. 1 is a cross-sectional view showing one aspect of the structure of the information recording medium according to the present invention, and FIGS. 2 and 3 are graphs showing the recording/erasing repetition characteristics of the disks of the comparative example and the example, respectively. . 1...Substrate 2.4...Protective film 3...Recording film Patent applicant Asahi Kasei Industries, Ltd. First factor

Claims (1)

【特許請求の範囲】[Claims] 1 基板上に記録膜及び保護膜を設けた情報記録媒体の
製造法において、HeまたはNeからなるガスを用いて
スパッタリングにより膜形成を行うことを特徴とする情
報記録媒体の製造法
1. A method for manufacturing an information recording medium in which a recording film and a protective film are provided on a substrate, characterized in that the film is formed by sputtering using a gas consisting of He or Ne.
JP31293688A 1988-12-13 1988-12-13 Production of information recording medium Pending JPH02158936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31293688A JPH02158936A (en) 1988-12-13 1988-12-13 Production of information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31293688A JPH02158936A (en) 1988-12-13 1988-12-13 Production of information recording medium

Publications (1)

Publication Number Publication Date
JPH02158936A true JPH02158936A (en) 1990-06-19

Family

ID=18035258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31293688A Pending JPH02158936A (en) 1988-12-13 1988-12-13 Production of information recording medium

Country Status (1)

Country Link
JP (1) JPH02158936A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149054A (en) * 1985-12-24 1987-07-03 Hitachi Maxell Ltd Manufacture of optical information recording disc and sputtering device
JPS62170047A (en) * 1986-01-21 1987-07-27 Toray Ind Inc Production of optical recording medium
JPH01166321A (en) * 1987-12-23 1989-06-30 Hitachi Ltd Magnetic recording medium and production thereof
JPH02139735A (en) * 1988-11-18 1990-05-29 Sanyo Electric Co Ltd Manufacture of optical recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149054A (en) * 1985-12-24 1987-07-03 Hitachi Maxell Ltd Manufacture of optical information recording disc and sputtering device
JPS62170047A (en) * 1986-01-21 1987-07-27 Toray Ind Inc Production of optical recording medium
JPH01166321A (en) * 1987-12-23 1989-06-30 Hitachi Ltd Magnetic recording medium and production thereof
JPH02139735A (en) * 1988-11-18 1990-05-29 Sanyo Electric Co Ltd Manufacture of optical recording medium

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