JPS62160694A - Thin film el device and manufacture of the same - Google Patents
Thin film el device and manufacture of the sameInfo
- Publication number
- JPS62160694A JPS62160694A JP61001883A JP188386A JPS62160694A JP S62160694 A JPS62160694 A JP S62160694A JP 61001883 A JP61001883 A JP 61001883A JP 188386 A JP188386 A JP 188386A JP S62160694 A JPS62160694 A JP S62160694A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- emitting layer
- light
- evaporation
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011572 manganese Substances 0.000 claims description 27
- 239000005083 Zinc sulfide Substances 0.000 claims description 22
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 22
- 238000001704 evaporation Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- CADICXFYUNYKGD-UHFFFAOYSA-N sulfanylidenemanganese Chemical compound [Mn]=S CADICXFYUNYKGD-UHFFFAOYSA-N 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004299 TbF3 Inorganic materials 0.000 description 2
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- -1 that is Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- OJIKOZJGHCVMDC-UHFFFAOYSA-K samarium(iii) fluoride Chemical compound F[Sm](F)F OJIKOZJGHCVMDC-UHFFFAOYSA-K 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical group [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、１ｉｌ１９ＥＬ（エレクトロ・ルミネッセン
ス）素子に係り、待に、高輝度・低電圧駆動の薄膜ＥＬ
素子に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an 1il19EL (electroluminescence) device, and firstly, a thin film EL device with high brightness and low voltage drive.
Regarding elements.
Ｙ４度の面で問題が多く、照明用光源としての開発を断
念せざるを得なかった、硫化亜鉛（ＺｎＳ）系蛍光体粉
末を用いた分散型ＥＬ素子に代わって、薄膜蛍光体層を
用いたスリ脱型ＥＬ素子が高輝度を得られることから近
年注目されてきている。A thin film phosphor layer is used instead of a dispersed EL element using zinc sulfide (ZnS)-based phosphor powder, which had many problems with Y4 degrees and had to be abandoned for development as a light source for lighting. In recent years, scraped EL devices have been attracting attention because they can provide high brightness.
薄膜Ｅｌ素子は、発光層が透明な薄膜で構成されていて
、外部から入射する光および発光層内部で発光した光が
散乱されてハレーションやにじみを生じることが少なく
、鮮明でコントラストが高いことから、車両への搭載用
、コンピュータ端末等の表示装置あるいは照明用として
脚光を浴びている。Thin-film El elements have a light-emitting layer made of a transparent thin film, and light incident from the outside and light emitted inside the light-emitting layer are less likely to be scattered and cause halation or smearing, and are clear and have high contrast. It has been attracting attention for use in vehicles, display devices for computer terminals, and lighting.
例えば、マンガン（Ｍｎ）を、ＺｎＳ中の発光中心とし
て用いたＩＩＥＬ素子の基本構造は透光性の基板上に、
酸化錫（ＳｎＯ２）＠等かうなる透明電極と、第１の誘
電体層と、母材をＺｎＳ。For example, the basic structure of an IIEL device using manganese (Mn) as a luminescent center in ZnS is as follows:
A transparent electrode made of tin oxide (SnO2), etc., a first dielectric layer, and a base material made of ZnS.
発光中心不純物をＭｎとした結晶薄膜すなわちＺｎＳ：
Ｍｎａｉｉ−膜からなる発光層と、第２の誘電体層、ア
ルミニウム（Ａ Ｉ ＞層等からなる背面電極とが順次
積層せしめられた２重誘電体＠造をなしている。Crystal thin film with Mn as the luminescent center impurity, that is, ZnS:
It has a double dielectric structure in which a light emitting layer made of a Mnaii film, a second dielectric layer, and a back electrode made of an aluminum (A I > layer, etc.) are laminated in sequence.
そして、発光の過程は、以下に示す如くである。The process of light emission is as shown below.
前記透明電極と前記背面電極との間に電圧を印加すると
、発光胴内に誘起された宙界によって界面準位にトラッ
プされていた電子が引き出されてｈ０通され充分なエネ
ルギーを得、この電子がＭｎ（発光中心）の軌道電子に
衝突しこれを励起する。When a voltage is applied between the transparent electrode and the back electrode, the electrons trapped in the interface level are extracted by the cosmic field induced in the light emitting body and passed through h0, obtaining sufficient energy, and the electrons collides with orbital electrons of Mn (emission center) and excites them.
そしてこの励起された発光中心が基底状態に戻る際に発
光を行なう。Then, when this excited luminescent center returns to the ground state, it emits light.
従来、このような薄膜ＥＬ素子では、通常上述の如きＺ
ｎＳ：Ｍｎ等の発光層の形成に際し、電子ビーム、蒸着
法が用いられていた（特公昭５３−１０３５８＠公報、
特公昭５４−８０８０号公報参照）。Conventionally, in such a thin film EL element, the above-mentioned Z
When forming a light-emitting layer such as nS:Mn, electron beam and vapor deposition methods were used (Japanese Patent Publication No. 53-10358 @ Publication,
(See Japanese Patent Publication No. 54-8080).
これは、第８図に示Ｖり１１＜、真空！！ｉ内で、Ｚ
ｎ ３と０．１〜１％のマンガン（Ｍｎ）とを混せ合１
りＡ結ｕしめて形成されるペレット２を市子銃３からの
電子ビーム４で黙劇することにより該ペレットを加熱せ
しめ、蒸発させてこれを基板５上に堆積させるものであ
る。This is shown in Figure 8.V11<, vacuum! ! Within i, Z
Mix n 3 and 0.1 to 1% manganese (Mn) 1
The pellets 2 formed by bonding A are heated and evaporated by irradiating them with an electron beam 4 from an Ichiko gun 3, and are deposited on a substrate 5.
この方法によると、発光層の母材の然気圧、母材を構成
する元素の蒸気圧、並びに発光中心不純物の蒸気圧（例
えばＰＺｎＳ 、 ＰＺｎ、 ＰＳ 、 ＰＨｎ）が大
きく異なる（ Ｐ２ｎＳ ＜ ＰＭｎ＜ Ｆ）Ｉｎ＜
ＰＳ ）ため、蒸発の仕方が均一でなかったり、一旦基
板に付着した元素が再蒸発したりすることにより、成膜
される発光層のぽ材が化学母論的組成からずれ、結晶性
が悪くなったり発光中心不純物の分布が不均一となる等
の不都合があった。（なお、ｐＺｎｓ。According to this method, the natural pressure of the base material of the light emitting layer, the vapor pressure of the elements constituting the base material, and the vapor pressure of the luminescent center impurities (for example, PZnS, PZn, PS, PHn) are significantly different (P2nS < PMn < F )In<
PS), due to uneven evaporation or re-evaporation of elements once attached to the substrate, the material of the light-emitting layer that is formed will deviate from its scientometric composition, resulting in poor crystallinity. There have been disadvantages such as uneven distribution of luminescent center impurities. (In addition, pZns.
ｐ Ｈｎ、 ｐ Ｉｎ、 Ｐ Ｓは夫々ＺｎＳ、Ｍｎ、
Ｚｎ、３の蒸気圧を示すものとする。）
従って、電子ビーム、蒸着法によって、成膜された発光
層は第９図に示ず如く、粒状の多結晶構造あるいは成長
の初期段階に小さな結晶粒がたくさんできる、いわゆる
デッドレイヤーが存在する構造であった。p Hn, p In, P S are respectively ZnS, Mn,
Let us indicate the vapor pressure of Zn,3. ) Therefore, the light-emitting layer formed by electron beam or vapor deposition has a granular polycrystalline structure or a so-called dead layer structure in which many small crystal grains are formed in the initial stage of growth, as shown in Figure 9. Met.
このような発光層を用いた薄膜Ｅｌ素子では、外部から
印加された電界によって加速される発光層中の電子Ｅが
発光中心不純物１ｍに衝突して発光に寄与する前に結晶
粒界面Ｂによって散乱されるため、外部から印加された
電界が有効に発光に寄与しない。In a thin film El element using such a light emitting layer, electrons E in the light emitting layer accelerated by an externally applied electric field are scattered by the crystal grain interface B before colliding with the emission center impurity 1m and contributing to light emission. Therefore, an externally applied electric field does not effectively contribute to light emission.
従って、かかる４ｆｉｍ造の薄膜ＥＬ素子では、実用に
供し得る程度の輝度（２０ｆｔ−Ｌ）を得るためには２
００Ｖ程度の高い電圧が必要であった。Therefore, in such a 4-film thin film EL element, in order to obtain a practical level of brightness (20 ft-L), it is necessary to
A high voltage of about 00V was required.
本発明は、前記実情に鑑みてなされたもので、高輝度、
低電圧駆動の薄膜ＥＥ素子を提供することを目的とする
。The present invention has been made in view of the above-mentioned circumstances.
An object of the present invention is to provide a thin film EE element driven at a low voltage.
そこで本発明では、発光層に柱状多結晶薄膜を用いるよ
うにしている。Therefore, in the present invention, a columnar polycrystalline thin film is used for the light emitting layer.
また、発光層の形成に際しては、発光層の母材あるいは
母材の構成元素と発光中心不純物とを夫々別の蒸発源す
なわち多元から蒸発せしめ、基板上で結合させる、いわ
ば多元蒸着法を用いるようにしている。In addition, when forming the light-emitting layer, a so-called multi-source evaporation method is used, in which the base material of the light-emitting layer or the constituent elements of the base material and the luminescent center impurity are evaporated from separate evaporation sources, that is, multiple sources, and then combined on the substrate. I have to.
（作用〕
すなわち、第１図に示す如く、柱状多結晶を５テ光層と
して用いることにより、外部から電界を加えると発光層
中の電子Ｅが加速され、発光中心不純物１ｍに衝突し、
有効に発光する。(Function) That is, as shown in Fig. 1, by using a columnar polycrystal as a 5-T light layer, when an electric field is applied from the outside, the electrons E in the light emitting layer are accelerated and collide with the light emitting center impurity 1 m.
Emit light effectively.
発光層の形成に際しては、第２図に示す如く、例えば１
ｏ−３〜１０−７程度の真空度に設定された真空槽１１
内に、発光層の母材であるＺｎＳの構成元素と発光中心
不純物Ｍｎ（例えばＺ自とＳとＭｎ）を別々のルツボ１
２．１３．１４に入れ各々を独立に温度コントロールし
つつ加熱し、形成された発光層が化学苗論的組成になる
ように各々の蒸発量を制御することによって、発光中心
不純物の分布が均一な柱状結晶を基板１５上に析出せし
めることができる。When forming the light-emitting layer, for example, as shown in FIG.
Vacuum chamber 11 set to a degree of vacuum of about o-3 to 10-7
The constituent elements of ZnS, which is the base material of the luminescent layer, and the luminescent center impurity Mn (for example, Z itself, S, and Mn) are placed in separate crucibles 1.
2.13.14 and heating each layer while controlling the temperature independently, and by controlling the amount of evaporation of each so that the formed luminescent layer has a chemical composition, the distribution of luminescent center impurities is uniform. Columnar crystals can be deposited on the substrate 15.
これは、次に示すような成長過程をたどることによる。This is due to the following growth process.
例えば物質Ａと物質Ｂを別々のルツボに入れ、独立した
蒸発源とした多元蒸着法により基板上に物質ＡＢを形成
する場合を想定する。For example, assume that substance A and substance B are placed in separate crucibles and substance AB is formed on a substrate by a multi-dimensional evaporation method using independent evaporation sources.
ある温度Ｔ＾における物質Ａの蒸気圧をＰＡとすると、
真空槽内の真空度（圧力）ＰＯがＰＯ＜ＰＡであるとき
、基板温度ＴＳをＴＳにおける物質Ａの蒸気圧ＰＡＳが
ＰＡＳ＞ＰＡとなるようにＴＳ〉■八とすることにより
、ＲＡＳ＞ＰＯとなり、Ａ単体を蒸発させて基板上に付
着させようとしても基板上にはほとんど付着しない。If the vapor pressure of substance A at a certain temperature T is PA, then
When the degree of vacuum (pressure) PO in the vacuum chamber is PO<PA, by setting the substrate temperature TS to TS>■8 so that the vapor pressure PAS of substance A at TS becomes PAS>PA, RAS>PO Therefore, even if an attempt is made to evaporate A alone and make it adhere to the substrate, it hardly adheres to the substrate.
このとき、他物質Ｂと前記物質Ａとの化合物ＡＢの温度
ＴＳにおける蒸気圧Ｐ ＡＢＳがＰＡＢＳ＜ＰＯとなる
ようにＴＳを設定すれば、基板上に物質Ｂがあれば（ｐ
ＢＳ＜ＰＯとする）基板上で物質、へど物質Ｂとが反応
し、化合物結晶ＡＢが成長していく。このとき基板上に
存在する元素Ｂ（あるいはＡ）と飛来してきた元素Ａ（
あるいはＢ）とが粘合するとき、最もポテンシャルの低
い位置に元素がおさまるため、結果的にある結晶面だけ
が成長していき柱状結晶をなすように成膜していく。At this time, if TS is set so that the vapor pressure PABS at the temperature TS of the compound AB of the other substance B and the substance A satisfies PABS<PO, then if substance B is present on the substrate (p
BS<PO) The substance B reacts with the substance B on the substrate, and a compound crystal AB grows. At this time, element B (or A) existing on the substrate and element A (or
Alternatively, when B) is viscous, the elements settle in the position with the lowest potential, and as a result, only a certain crystal plane grows, forming a film forming a columnar crystal.
〔実施例）
以下、本発明の実施例について、図面を参照しつつ詳細
に説明する。[Examples] Examples of the present invention will be described in detail below with reference to the drawings.
この薄膜ＥＬ素子は、第３図に示づ如く、二車誘電体構
造をなすもので、発光層２１を、母材としてのＺｎＳ中
に、発光中心不純物としての０．４％のＩｙｌｎを含有
せしめた膜厚５０００人の柱状多結晶構造の油膜層（以
下ＺｎＳ：０．４％Ｍｎというように表現するものとす
る。）によって構成するようにしている。As shown in FIG. 3, this thin film EL element has a two wheel dielectric structure, and the light emitting layer 21 is made of ZnS as a base material containing 0.4% Iyln as a light emitting center impurity. It is made up of an oil film layer (hereinafter expressed as ZnS:0.4%Mn) having a columnar polycrystalline structure with a film thickness of 5000 mm.
すなわち、厚さ１順の透光性のガラス基板２２上に膜厚
０．３−の酸化錫（ＳｎＯ２）層等からなる透明電極２
３、膜厚０．５ｍの酸化タンタル（Ｔａ２０ｓ ）層か
らなる第１の誘電体層２４、前記発光層２１、膜厚０．
５ｍの酸化タンタル（Ｔａ２０ｓ ）層からなる第２の
誘電体層２５、膜厚０．５膚のアルミニウム薄膜からな
る背面電極２６とが順次積層ゼしめられて構成されてい
る。That is, a transparent electrode 2 made of a 0.3-thick tin oxide (SnO2) layer or the like is placed on a transparent glass substrate 22 in order of thickness.
3. The first dielectric layer 24 made of a tantalum oxide (Ta20s) layer with a thickness of 0.5 m; the light emitting layer 21;
A second dielectric layer 25 made of a 5 m thick tantalum oxide (Ta20s) layer and a back electrode 26 made of a thin aluminum film 0.5 m thick are successively laminated.
この薄膜ＥＬ素子の等価回路は第４図に示す如く、夫々
、第１の誘電体層２４、発光層２１、第２の誘電体層２
５によって構成される３つのコンデンサの直列接続体と
して表わすことができる。As shown in FIG. 4, the equivalent circuit of this thin film EL element includes a first dielectric layer 24, a light emitting layer 21, a second dielectric layer
5 can be represented as a series connection of three capacitors.
次に、本発明実施例の薄膜ＥＬ素子の製造方法について
説明する。Next, a method for manufacturing a thin film EL device according to an embodiment of the present invention will be described.
まず、第５図（ａ）に示す如り、透光性のガラス基板２
２上に、スパッタリング法により５ｎ０２層からなる透
明電極２３を形成する。First, as shown in FIG. 5(a), a transparent glass substrate 2
2, a transparent electrode 23 made of a 5n02 layer is formed by sputtering.
次いで、第５図（ｂ）に示す如く、スパッタリング法に
より酸化クンタル層からなる第１の誘電体層２４を形成
する。Next, as shown in FIG. 5(b), a first dielectric layer 24 made of a Kuntal oxide layer is formed by sputtering.
続いて、第２図に示したような蒸着装置を使用し、Ｚｎ
、Ｓ、Ｍｎを夫々別のルツボに入れ、東空漕内の蒸気圧
を１０−５ ＴＯｒｒに設定した後、３つのルツボを、
形成される発光層が化学は論的組成となるように独立的
に温度コントロールしながら前記Ｚｎ、Ｓ、Ｍｎを加熱
蒸発せしめると共に、該ガラス基板の温度ＴＳを１００
〜１０００″Ｃの適切な範囲に設定することにより、発
光中心不純物Ｍ ｎの均一に分布するＺｎＳ柱状多結晶
からなる発光層２１が析出する（第５図（Ｃ））。Next, Zn was deposited using a vapor deposition apparatus as shown in Figure 2.
After putting , S, and Mn into separate crucibles and setting the steam pressure in the Toku tank to 10-5 Torr, the three crucibles were
The Zn, S, and Mn are heated and evaporated while independently controlling the temperature so that the light emitting layer to be formed has a chemical composition, and the temperature TS of the glass substrate is increased to 100%.
By setting the temperature in an appropriate range of ~1000''C, a light-emitting layer 21 made of ZnS columnar polycrystals in which the light-emitting center impurity Mn is uniformly distributed is precipitated (FIG. 5(C)).
更に、第５図（ｄ）示づ如く、スパッタリング法により
、酸化タンタル層からなる第２の誘電体層２５を形成す
る。Furthermore, as shown in FIG. 5(d), a second dielectric layer 25 made of tantalum oxide is formed by sputtering.
そして最後に、第５図（ｅ）に示す如く、真空蒸着法に
より、アルミニウム薄膜を成膜した後、フォトリソエツ
チング法によりパターニングし背面電極２６を形成する
。Finally, as shown in FIG. 5(e), a thin aluminum film is formed by vacuum evaporation, and then patterned by photolithography to form the back electrode 26.
このようにして形成された薄膜Ｅ １ｇ子のツシ光層は
、第６図（ａ）にそのＸ線回折の結果を示す如く、極め
て結晶性の良いものとなっている。比較のために、従来
の電子ビーム蒸着法によって形成したＺｎＳ ：Ｍｎ層
（発光層）のＸ線回折の結果を第６図（ｂ）に示す。こ
れらの比較からも明らかなように、本発明の方法によっ
て形成した発光層は結晶性のより良いものとなっている
ことがわかる。The optical layer of the thin film E 1g thus formed has extremely good crystallinity, as shown in the results of X-ray diffraction in FIG. 6(a). For comparison, FIG. 6(b) shows the results of X-ray diffraction of a ZnS:Mn layer (emissive layer) formed by the conventional electron beam evaporation method. As is clear from these comparisons, it can be seen that the light-emitting layer formed by the method of the present invention has better crystallinity.
また、この薄膜Ｅｌ素子は、透明電極と背面電極との間
に交番電界を加えることによって駆動されるが、その電
圧−輝度特性曲線ａを従来例の蒲ＷＡＥ Ｌｆ４子の電
圧−輝度特性曲線すと共に第７図に示す。これらの比較
からも、本発明の薄膜ＥＬ素子は、従来例の薄膜ＥＬ素
子の約１／２の電圧で同一の輝度を得ることができ、低
電圧で高輝度特性を有するものであることがわかる。In addition, this thin film El element is driven by applying an alternating electric field between the transparent electrode and the back electrode, and its voltage-brightness characteristic curve a is similar to the voltage-brightness characteristic curve of the conventional waE Lf4 element. This is shown in FIG. From these comparisons, it can be seen that the thin film EL device of the present invention can obtain the same brightness at about half the voltage of the conventional thin film EL device, and has high brightness characteristics at low voltage. Recognize.
ここで、本発明の発光層２１に、更に誘電率の大きい誘
電体膜、例えはヂタン酸バリウムＢａＴｉＯ３を第１の
誘電体層２４、第２の誘電体層２５に用いることにより
、電圧−輝度特性は第７図の曲線（Ｃ）に示す如くなり
、従来例の薄％ Ｅ Ｌ水子（曲線（ｂ））に比べて約
１／３〜１／４の電圧で駆動するとか可能となる。これ
は第１の誘電体層２４、第２の誘電体層２５、発光；閃
２１の比誘電率を夫々ε「１、ε「２、ε１とすると、
これらの関係はＣｒ１、Ｓｒ２）ε１となり（第・１図
参照）、従ってこれらの電気容量Ｃｒ１、Ｃｒ２、Ｃ１
はＣｒ１、Ｃｒ２）ＣＩ となルタメ、コ（７）素子へ
の外部からの印加電圧の（Ｊとんどが発光層にだけかか
ることになるからである。Here, in the light emitting layer 21 of the present invention, by using a dielectric film having a higher dielectric constant, for example, barium ditanate BaTiO3 for the first dielectric layer 24 and the second dielectric layer 25, the voltage-luminance The characteristics are as shown in the curve (C) in Figure 7, and it is possible to drive with about 1/3 to 1/4 of the voltage compared to the conventional thin %EL water child (curve (b)). . If the relative dielectric constants of the first dielectric layer 24, the second dielectric layer 25, and the light emitting flash 21 are ε'1, ε'2, and ε1, respectively,
The relationship between these is Cr1, Sr2) ε1 (see Figure 1), so these electric capacities Cr1, Cr2, C1
This is because (J) of the externally applied voltage to the element is applied only to the light emitting layer.
このように、本発明実施例の薄膜ＥＬ素子によれ（よ、
約２０ｆｔ−Ｌ（フットランバート）の輝度を育るのに
約１００Ｖ以下の低電圧でよく、滲めて実用的なものと
なっている。In this way, the thin film EL device of the embodiment of the present invention
A low voltage of about 100 V or less is required to achieve a brightness of about 20 ft-L (foot-lambert), making it practical.
な、方、実施例においては、Ｚ ｎ Ｓ ： Ｍ ｎ薄
膜を梵光層に用いた場合について説明したが、これに限
定されることなく、母材をＺｎＳとして、発光中心不純
物のみをフッ化テルビウム（ＴｂＦ３）、フッ化サマリ
ウム（ＳｍＦ３ ）等で置き換えたＺｎＳ：０．１〜１
％ＴｂＦ３、ＺｎＳ：０．１〜１％５ｍＦ３等の柱状多
結晶をはじめとし、硫化カルシウム（ＣａＳ）：０．１
〜１％ユーロピウム（Ｅｕ）、硫化ストロンチウム（Ｓ
ｒＳ）：０．１〜１％フフ化セリウム（ＣｅＦ３ ）の
柱状多結晶等、他の物質の柱状多結晶でもよいことはい
うまでもない。By the way, in the example, the case where a ZnS:Mn thin film was used for the spectral layer was explained, but the present invention is not limited to this. ZnS replaced with terbium (TbF3), samarium fluoride (SmF3), etc.: 0.1-1
Including columnar polycrystals such as %TbF3, ZnS: 0.1-1%5mF3, calcium sulfide (CaS): 0.1
~1% europium (Eu), strontium sulfide (S
It goes without saying that columnar polycrystals of other materials such as columnar polycrystals of 0.1 to 1% cerium fluoride (CeF3) may also be used.
また、実施例においては、Ｚ ｎ Ｓ ： Ｍ ｎの柱
状多結晶薄膜を成膜するのに、夫々Ｚｎ、Ｓ、Ｍｎの入
った３つのルツボを蒸着源として用いたが、ＺｎＳ、Ｓ
、Ｍｎの３つあるいは、Ｚｎ、Ｓ、Ｍ ｎ Ｓの３つあ
るいは、Ｚｎ、Ｓ、ＺｎＳ、Ｍｎ等、適宜調整可能であ
る。In addition, in the example, three crucibles containing Zn, S, and Mn were used as vapor deposition sources to form a columnar polycrystalline thin film of ZnS:Mn, but
, Mn, three of Zn, S, MnS, or Zn, S, ZnS, Mn, etc., which can be adjusted as appropriate.
加えて、この薄膜ＥＬ累子は、表示装置以外にも照明用
として、光記Ｑ媒体への信号の出５゛込み、読み出し、
消去用の光源としても使用可能である。In addition, this thin film EL transducer can be used not only for display devices but also for illumination, for inputting and reading signals to and from optical recording media.
It can also be used as a light source for erasing.
〔効果］
以上説明してぎたように、本発明の薄膜ＥＬ木子によれ
ば、発光層を複数個の蒸光源を独立的に温度コントロー
ルしつつ蒸着せしめた柱状多結晶で４ｉ４成しているた
め、低い駆動電圧で高輝度を１！７ることが可能となる
。[Effects] As explained above, according to the thin film EL wood of the present invention, the light-emitting layer is made of 4i4 columnar polycrystals deposited by independently controlling the temperature of a plurality of evaporation light sources. , it is possible to achieve high brightness by 1:7 with a low driving voltage.
第１図は、本光明の薄膜ＥＬ累子の発光層の結晶＋ｆＩ
Ｉ造を示す図、第２図は、本発明に基つく発光拵の形成
方法の原理図、第３図は、本発明実施例の薄膜ＥＬ素子
を示す図、第４図は、同素子の等価回路図、第５図（ａ
＞乃至（ｅ）は同素子の製造工程図、第６図（ａ）およ
び（ｂ）は夫々、本発明および従来例の薄膜ＥＬ素子の
発光層のＸ線回折の結果を示す比較図、第７図は、本光
明および従来例の＠ｉ膜ＥＬ素子の電圧−輝度特性の比
較図、第８図は、従来例の薄膜ＥＬ素子の発光層の形成
方法の原理を示す図、第９図は、従来例の発光層の結晶
描込を示す図である。
１．１１・・・真空槽、２・・・ペレット、３・・・電
子銃、４・・・電子ビーム、５．１５・・基板、Ｅ・・
・電子、１ｍ・・・発光中心不純物、Ｂ・・・結晶粉界
面、１２゜１３．１４・・・ルツボ、２１・・・発光１
藝、２２・・・カラス基板、２３・・・透明電極、２４
・・・第１の誘電体層、２５・・・第２の誘電体層、２
６・・・背面電極。
イ
第５図（Ｑ）
２２ 第５図（ｂ）
第５図（Ｃ）
第５図（ｅ）Figure 1 shows the crystal + fI of the light emitting layer of the thin film EL crystal of this Komei.
FIG. 2 is a diagram showing the principle of the method for forming a light-emitting device based on the present invention, FIG. 3 is a diagram showing a thin film EL device according to an embodiment of the present invention, and FIG. 4 is a diagram showing the structure of the same device. Equivalent circuit diagram, Figure 5 (a
＞ to (e) are manufacturing process diagrams of the same device, and FIGS. 6(a) and 6(b) are comparative diagrams showing the results of X-ray diffraction of the light-emitting layer of the thin-film EL devices of the present invention and the conventional example, respectively. Fig. 7 is a comparison diagram of the voltage-luminance characteristics of the present Komei and conventional @i film EL elements, Fig. 8 is a diagram showing the principle of the method for forming the light emitting layer of the conventional thin film EL element, and Fig. 9 1 is a diagram showing a crystal drawing of a light emitting layer in a conventional example. 1.11... Vacuum chamber, 2... Pellet, 3... Electron gun, 4... Electron beam, 5.15... Substrate, E...
・Electron, 1m... Luminescence center impurity, B... Crystal powder interface, 12° 13.14... Crucible, 21... Luminescence 1
Art, 22... Glass substrate, 23... Transparent electrode, 24
...first dielectric layer, 25...second dielectric layer, 2
6... Back electrode. A Figure 5 (Q) 22 Figure 5 (b) Figure 5 (C) Figure 5 (e)
Claims (8)
たことを特徴とする 薄膜ＥＬ素子。(1) A thin film EL device characterized in that the light emitting layer is composed of a columnar polycrystalline material.
構成する元素又は化合物を添加した材料からなる柱状多
結晶から構成されるようにしたことを特徴とする特許請
求の範囲第（１）項記載の 薄股ＥＬ素子。(2) The light-emitting layer is made of a columnar polycrystal made of a material obtained by adding an element or compound constituting a light-emitting center to a II-VI compound. ) Thin-crotch EL element described in item 2.
Ｍｎ）を添加してなる柱状多結晶から構成されるように
した特許請求の範囲第（２）項記載の薄膜ＥＬ素子。(3) The light-emitting layer includes zinc sulfide (ZnS) and manganese (
The thin film EL device according to claim 2, wherein the thin film EL device is made of columnar polycrystals doped with Mn).
えた薄膜ＥＬ素子の製造方法において、発光層の形成工
程が、 発光層の母材あるいは母材の構成元素と発光中心不純物
とを夫々別の蒸発源すなわち多元から蒸発せしめ、基板
上で結合させる多元蒸着工程であることを特徴とする 薄膜ＥＬ素子の製造方法。(4) In the method for manufacturing a thin film EL device comprising a transparent electrode, a dielectric layer, a light emitting layer, and a back electrode, the step of forming the light emitting layer includes the base material of the light emitting layer or the constituent elements of the base material and the luminescent center impurity. A method for manufacturing a thin film EL device, characterized in that it is a multi-source evaporation process in which evaporates from different evaporation sources, that is, multiple sources, and combines them on a substrate.
１０＾−＾５Ｔｏｒｒの頁空中で行なうようにしたこと
を特徴とする特許請求の範囲第（４）項記載の薄膜ＥＬ
素子の製造方法。(5) The thin film EL according to claim (4), characterized in that the multi-dimensional vapor deposition step is performed in an atmosphere of 10^-^3 Torr to 10^-^5 Torr.
Method of manufacturing elements.
、ＺｎＳ：Ｍｎ発光層を形成する工程であることを特徴
とする特許請求の範囲第（４）項記載の 薄膜ＥＬ素子の製造方法。(6) The multi-component vapor deposition step is a step in which the evaporation source is composed of three evaporation sources consisting of zinc sulfide (ZnS), sulfur (S), and manganese (Mn), and a ZnS:Mn luminescent layer is formed. A method for manufacturing a thin film EL device according to claim (4), characterized in that:
発光層を形成する工程であることを特徴とする特許請求
の範囲第（４）項記載の 薄膜ＥＬ素子の製造方法。(7) In the multi-component evaporation step, the evaporation source is composed of three evaporation sources consisting of zinc (Zn), S, and Mn;
The method for manufacturing a thin film EL device according to claim (4), characterized in that the step is to form a light emitting layer.
成されＺｎＳ：Ｍｎ発光層を形成する工程であることを
特徴とする特許請求の範囲第（４）項記載の 薄膜ＥＬ素子の製造方法。(8) The multi-component evaporation step is a step in which the evaporation source is composed of three evaporation sources consisting of Zn, S, and manganese sulfide (MnS) to form a ZnS:Mn light-emitting layer. A method for manufacturing a thin film EL device according to item (4).
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61001883A JPH0668999B2 (en) | 1986-01-08 | 1986-01-08 | Thin film EL device and method of manufacturing the same |
| US06/947,782 US4794302A (en) | 1986-01-08 | 1986-12-30 | Thin film el device and method of manufacturing the same |
| DE3751206T DE3751206T2 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same. |
| DE8787100094T DE3777664D1 (en) | 1986-01-08 | 1987-01-07 | THICK LAYER ELECTROLUMINESCENT DEVICE AND METHOD FOR PRODUCING THE SAME. |
| EP87100094A EP0229627B1 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same |
| EP90125792A EP0421494B1 (en) | 1986-01-08 | 1987-01-07 | A thin film electroluminescent (EL) device and method of manufacturing the same |
| FI870066A FI83013C (en) | 1986-01-08 | 1987-01-08 | Thin film type electroluminescence device and method of counting its front |
| KR1019870000081A KR0132785B1 (en) | 1986-01-08 | 1987-01-08 | Thin film el device and method of manufacturing the same |
| US07/269,930 US5006365A (en) | 1986-01-08 | 1988-10-28 | Method of manufacturing a thin film EL device by multisource deposition method |
| US07/648,111 US5133988A (en) | 1986-01-08 | 1991-01-31 | Method of manufacturing thin film el device |
| KR1019950034085A KR970000428B1 (en) | 1986-01-08 | 1995-10-02 | Thin film el device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61001883A JPH0668999B2 (en) | 1986-01-08 | 1986-01-08 | Thin film EL device and method of manufacturing the same |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7205903A Division JPH0845664A (en) | 1995-08-11 | 1995-08-11 | Manufacture of thin film el element |
| JP7205902A Division JPH0845666A (en) | 1995-08-11 | 1995-08-11 | Thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62160694A true JPS62160694A (en) | 1987-07-16 |
| JPH0668999B2 JPH0668999B2 (en) | 1994-08-31 |
Family
ID=11513963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61001883A Expired - Lifetime JPH0668999B2 (en) | 1986-01-08 | 1986-01-08 | Thin film EL device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0668999B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137484A (en) * | 1990-09-28 | 1992-05-12 | Komatsu Ltd | Manufacture of thin film el element |
| US5466494A (en) * | 1993-01-29 | 1995-11-14 | Kabushiki Kaisha Komatsu Seisakusho | Method for producing thin film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58112299A (en) * | 1981-12-26 | 1983-07-04 | 高橋 清 | Method of producing electroluminescent element |
| JPS59147634A (en) * | 1983-02-09 | 1984-08-24 | Konishiroku Photo Ind Co Ltd | Formation of insulating film |
| JPS61211993A (en) * | 1985-03-14 | 1986-09-20 | 富士通株式会社 | Manufacture of el panel |
| JPS61253797A (en) * | 1985-05-07 | 1986-11-11 | 日本電気株式会社 | Manufacture of electroluminescence element |
-
1986
- 1986-01-08 JP JP61001883A patent/JPH0668999B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58112299A (en) * | 1981-12-26 | 1983-07-04 | 高橋 清 | Method of producing electroluminescent element |
| JPS59147634A (en) * | 1983-02-09 | 1984-08-24 | Konishiroku Photo Ind Co Ltd | Formation of insulating film |
| JPS61211993A (en) * | 1985-03-14 | 1986-09-20 | 富士通株式会社 | Manufacture of el panel |
| JPS61253797A (en) * | 1985-05-07 | 1986-11-11 | 日本電気株式会社 | Manufacture of electroluminescence element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137484A (en) * | 1990-09-28 | 1992-05-12 | Komatsu Ltd | Manufacture of thin film el element |
| US5466494A (en) * | 1993-01-29 | 1995-11-14 | Kabushiki Kaisha Komatsu Seisakusho | Method for producing thin film |
| US5542979A (en) * | 1993-01-29 | 1996-08-06 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for producing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0668999B2 (en) | 1994-08-31 |
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