JPS6215442A - Pattern inspecting method and its device - Google Patents

Pattern inspecting method and its device

Info

Publication number
JPS6215442A
JPS6215442A JP15568585A JP15568585A JPS6215442A JP S6215442 A JPS6215442 A JP S6215442A JP 15568585 A JP15568585 A JP 15568585A JP 15568585 A JP15568585 A JP 15568585A JP S6215442 A JPS6215442 A JP S6215442A
Authority
JP
Japan
Prior art keywords
width
conductor
photodetector
light
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15568585A
Other languages
Japanese (ja)
Inventor
Moritoshi Ando
護俊 安藤
Koji Oka
浩司 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15568585A priority Critical patent/JPS6215442A/en
Publication of JPS6215442A publication Critical patent/JPS6215442A/en
Pending legal-status Critical Current

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  • Image Input (AREA)

Abstract

PURPOSE:To simultaneously inspect the upper width and the lower width of a trapezoidal section of a conductor by using a lighting spot having a dark field in a bright field. CONSTITUTION:A printed circuit board 3 has a conductor pattern 31 on an optical diffusion substrate 32. A lighting part 2 consists of a light source 21, a lens 22 and a mask 24, and an area to be inspected is illuminated by a lighting spot 27 having a dark field 26 in a bright field 25. A photodetecting part is provided with the first photodetector 51 for detecting a width of the conductor 31 in the bright field, and the second photodetector 52 for detecting a width of the conductor 31 in the dark field. The first photodetector 51 executes a measurement of a conductor pattern upper width 33, and the second photodetector 52 executes a measurement of a conductor pattern lower width 34.

Description

【発明の詳細な説明】 〔概 要〕 基板上に形成された導体パターンは通富台形状断面を有
しており、台形の−L幅または下幅が所定の寸法から大
きく外れている場合は、導体パターンの断線や短絡等に
つながる可能性が大きい。従来のパターン検査は台形の
1幅または上幅のいずれか一方を検知して良否を判定し
ていたが、台形の下幅および上幅を同時に検知して良否
を判定を行い欠陥の検出精度を向上させたものである。
[Detailed Description of the Invention] [Summary] The conductor pattern formed on the substrate has a trapezoidal cross section, and if the -L width or lower width of the trapezoid deviates significantly from the predetermined dimension, , there is a high possibility that it will lead to disconnection or short circuit of the conductor pattern. In conventional pattern inspection, pass/fail was determined by detecting either one width or the top width of the trapezoid, but now the bottom and top widths of the trapezoid are simultaneously detected to determine pass/fail, improving defect detection accuracy. It has been improved.

〔産業上の利用分野〕[Industrial application field]

本発明は印刷配線板の検査方法に係り、特に電気的絶縁
性を有する基板上に形成された導体パターンを検査する
方法に関する。
The present invention relates to a method for inspecting a printed wiring board, and more particularly to a method for inspecting a conductive pattern formed on an electrically insulating substrate.

印刷配線板はポリイミド、エポキシ系樹脂、セラミック
等、電気的絶縁性を有する基板の上に、銅(Cu)等か
らなる導体パターンが選択形成されているが、かかる導
体パターンは更に微細化、高密度化されると共に設計上
の余裕が縮小される領向がある。したがって導体パター
ンの一部に欠損や膨らみがあったり不要な導体残滓があ
ると、所望する回路特性を確保することができず信頼性
の低下を招くため、導体パターン全体を細密に検査して
かかる欠陥を予め検出してお(必要がある。
In printed wiring boards, conductor patterns made of copper (Cu) or the like are selectively formed on electrically insulating substrates such as polyimide, epoxy resin, ceramic, etc., but these conductor patterns are becoming finer and more sophisticated. There is an area where design margins are reduced as density increases. Therefore, if a part of the conductor pattern has defects, bulges, or unnecessary conductor residue, it will not be possible to secure the desired circuit characteristics, resulting in a decrease in reliability. Therefore, the entire conductor pattern must be carefully inspected. It is necessary to detect defects in advance.

今までに各種のパターン検査方法が開発されているが前
述の微細化、高密度化されたパターンの検査に適用する
には不十分であり、欠陥の検出精度を一層向上させたパ
ターン検査方法の実現が望まれている。
Although various pattern inspection methods have been developed so far, they are insufficient to be applied to the inspection of the finer, higher-density patterns mentioned above. It is hoped that this will be realized.

〔従来の技術〕[Conventional technology]

第3図および第4図は従来のパターン検査方法を示す斜
視図である。
3 and 4 are perspective views showing a conventional pattern inspection method.

従来のパターン検査方法には検査111当打が拡大鏡を
通して肉眼で欠陥を検出する方法や、被検査領域に照明
スポツl〜を照射しその反射光を検知することによって
欠陥を自動的に検出する方法等がある。しかし欠陥を検
査lll看者肉眼で検出する方法は検出できる欠陥の大
きさに]覗度があり、微細化、高密度化されたパターン
の検査には適さず、かかるパターンの検査には被検査領
域に照明スポットを照射し欠陥を自動的に検出する方法
が採られている。被検査領域に照明スポットを照射し欠
陥を自動的に検出する方法のなかでも一般に行われてい
る方法は、第3図に示す導体パターンと基板の反射率の
差を利用する方法吉、第4図tこ示ず基板の光拡散性を
利用する方法である。
Conventional pattern inspection methods include detecting defects with the naked eye through a magnifying glass, and automatically detecting defects by shining a lighting spot on the area to be inspected and detecting the reflected light. There are methods etc. However, the method of detecting defects with the naked eye is not suitable for inspecting finer, higher-density patterns because there is a degree of visibility in the size of defects that can be detected. A method is used to automatically detect defects by illuminating the area with a lighting spot. Among the methods for automatically detecting defects by irradiating a lighting spot onto the inspection area, the most commonly used method is the method using the difference in reflectance between the conductor pattern and the substrate, as shown in Figure 3. This is a method that utilizes the light diffusivity of the substrate (not shown in Figure t).

第3図において光源11およびレンズ12を具えた照明
部1から出射される照明スポット13が印刷配線板3の
被検査領域を照射しており、その反射光を光検知器41
やレンズ42を具えた光検知部4によって検知している
In FIG. 3, an illumination spot 13 emitted from an illumination unit 1 comprising a light source 11 and a lens 12 illuminates an area to be inspected on a printed wiring board 3, and the reflected light is transmitted to a photodetector 41.
The light is detected by the light detection section 4 equipped with a lens 42 and a lens 42.

即ち導体31は台形状断面を有し月っ基板32に比べて
反射率が高いために、被検査領域において反射され光検
知部4に入射する光のうち、導体上面において反射され
る光が他の導体の台形斜面部や基板の部分で反射される
光に比べて強い。したがって例えば光検知器41として
ラインセンサのように光の強さと共にその区間を検知で
きる素子を用いることによって、導体パターンの上幅3
3の測定を行うと共に上部に現れた欠損や膨らみ等の欠
陥を検出することができる。
That is, since the conductor 31 has a trapezoidal cross section and has a higher reflectance than the moon substrate 32, out of the light that is reflected in the area to be inspected and enters the photodetector 4, the light that is reflected on the upper surface of the conductor is not included. It is stronger than the light reflected from the trapezoidal slope of the conductor or the substrate. Therefore, for example, by using an element like a line sensor as the photodetector 41 that can detect the intensity of light and its section, the upper width of the conductor pattern 3
3. At the same time, it is possible to detect defects such as defects and bulges that appear on the upper part.

また第4図において照明部2は光源21、レンズ22、
および線状の光遮蔽部23を有するマスク24で構成さ
れており、照明部2がら出射される明視野25の中に線
状の暗視!F26を有する照明スポット27が印刷配線
板3の被検査領域を照射している。暗視野26において
導体3】の部分は全く暗黒になるのに対し、基板32の
部分は明視野25から基板内部に拡散した光によって明
るくなり、この光拡散を伴う基板部分を光検知器41や
レンズ42を具えた光検知部4によって検知している。
In addition, in FIG. 4, the illumination section 2 includes a light source 21, a lens 22,
and a mask 24 having a linear light shielding part 23, and a linear night vision! An illumination spot 27 having F26 illuminates the area of the printed wiring board 3 to be inspected. In the dark field 26, the part of the conductor 3 becomes completely dark, whereas the part of the substrate 32 becomes bright due to the light diffused into the board from the bright field 25, and the part of the board with this light diffusion is detected by a photodetector 41 The light is detected by the light detection section 4 equipped with a lens 42.

シタがって例えば光検知器4】としてラインセンサのよ
うに光の強さと共にその区間を検知できる素子を用い、
拡散した光によって明るくなっている領域に挟まれた暗
黒の区間を検知することによって、導体パターンの下幅
34の測定を行うと共に下部に現れた欠損や膨らみ、不
要な導体残滓等の欠陥を検出することができる。
For example, as a photodetector 4, an element like a line sensor that can detect the intensity of light and its area is used.
By detecting the dark section sandwiched between the areas brightened by the diffused light, the bottom width 34 of the conductor pattern can be measured and defects such as defects, bulges, and unnecessary conductor residue appearing at the bottom can be detected. can do.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし導体パターンと基板の反射率の差を利用する方法
は導体パターンの下幅34の測定ができないために、例
えば不要な導体残滓等によって隣接する導体パターン同
志が短絡していても検出できない。また基板の光拡散性
を利用する方法は導体パターンの上幅33の測定ができ
ないために、例えば導体パターンの上部が欠損し断線し
かかっていても検出できないという問題があった。
However, the method that utilizes the difference in reflectance between the conductor pattern and the substrate cannot measure the lower width 34 of the conductor pattern, and therefore cannot detect a short circuit between adjacent conductor patterns due to unnecessary conductor residue, for example. Furthermore, the method using the light diffusivity of the substrate cannot measure the upper width 33 of the conductor pattern, so there is a problem that, for example, even if the upper part of the conductor pattern is damaged and is about to break, it cannot be detected.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

第1図は本発明になるパターン検査装置の一実施例を示
す斜視図であり、全図を通し同じ対象物は同一記号で表
している。
FIG. 1 is a perspective view showing an embodiment of a pattern inspection apparatus according to the present invention, and the same objects are represented by the same symbols throughout the figures.

上記問題点は第1図に示す被検査領域に明視野25中に
暗視野26を有する照明スポット27を照射する照明部
2と、明視野25において反射される光を検知する第1
の光検知器51と、暗視野26において光拡散を伴う基
板部分を検知する第2の光検知器52とを其えてなるパ
ターン検査装置を用い、明視野25中に線状の暗視野2
6を有する照明スポット27を被検査領域に照射し、明
視野25において検知した導体31の幅を台形状断面の
下幅33となし、暗視野26において検知した導体31
の幅を台形状1tli面の下幅34となし、台形状断面
の」1幅33およびF幅34の検出を同時に行う本発明
になるパターン検査方法によって解決される。
The above problem is caused by the illumination unit 2 which illuminates the inspection area with an illumination spot 27 having a dark field 26 in the bright field 25 as shown in FIG.
A pattern inspection device including a photodetector 51 and a second photodetector 52 that detects a substrate portion with light diffusion in the darkfield 26 is used to detect a linear darkfield 2 in the brightfield 25.
6 is irradiated onto the inspection area, the width of the conductor 31 detected in the bright field 25 is taken as the lower width 33 of the trapezoidal cross section, and the width of the conductor 31 detected in the dark field 26 is
This problem is solved by the pattern inspection method of the present invention, in which the width of the trapezoidal 1tli surface is set as the lower width 34, and the 1width 33 and the F width 34 of the trapezoidal cross section are simultaneously detected.

〔作用〕[Effect]

第1図に示すパターン検査装置を用いて導体の台形状断
面の上幅33および下幅34の検査を同日に行うことに
より、導体の上部に現れた欠損や膨らみ等の欠陥は勿論
、導体の下部に現れた欠11や膨らみ、不要な導体残滓
等の欠陥を検出して良否を判定する等欠陥の検出積度を
一層向−Lさセろごとができる。
By inspecting the upper width 33 and lower width 34 of the trapezoidal cross section of the conductor on the same day using the pattern inspection device shown in FIG. Defects such as chips 11, bulges, unnecessary conductor residues, etc. appearing at the bottom can be detected, and defect detection can be performed in a single direction, such as determining pass/fail.

〔実施例〕〔Example〕

以下第1図により本発明の実施例について詳細に説明す
る。なお第2図は位置ずれ補正手段を示すブロック図で
ある。
Embodiments of the present invention will be described in detail below with reference to FIG. Note that FIG. 2 is a block diagram showing the positional deviation correction means.

第1図において導体パターン3Iを光拡散性を有する基
板32の上に選択形成してなる印刷配線板3は、図示し
た矢印方向に一定速度で移動するステージ6の上に搭載
されており。また照明部2ば光源21、レンズ22、お
よび線状の光遮蘭部23を有するマスク24で構成され
ていて、照明部2から出射される明視野25の中に線状
の暗視野26を有する照明スポット27が印刷配線板3
の被検査領域を照射している。−入光検知部5は明視!
!F25における導体31の幅を検知する第1の光検知
器51と、暗?11!野26における導体31の幅を検
知する第2の光検知器52と、明視野25における光を
第1の光検知器51に、暗視野26にお番ノる光を第2
の光検知器52に分離して入力するためのハーフミラ−
53、およびレンズ54を具えている。
In FIG. 1, a printed wiring board 3 in which a conductive pattern 3I is selectively formed on a light-diffusing substrate 32 is mounted on a stage 6 that moves at a constant speed in the direction of the arrow shown. Further, the illumination section 2 is composed of a light source 21, a lens 22, and a mask 24 having a linear light shielding section 23, and a linear dark field 26 is formed in a bright field 25 emitted from the illumination section 2. The illumination spot 27 with which the printed wiring board 3
The area to be inspected is irradiated. -The light detection unit 5 has clear vision!
! The first photodetector 51 detects the width of the conductor 31 at F25 and the dark? 11! A second photodetector 52 detects the width of the conductor 31 in the field 26, the light in the bright field 25 is sent to the first photodetector 51, and the light in the dark field 26 is sent to the second photodetector 51.
half mirror for separate input to the photodetector 52 of
53 and a lens 54.

なお第2図においてハーフミラ−53によって反射され
た光を第1の光検知器51に、ハーフミラ−53を透過
した光を第2の光検知器52に入力するように図示して
いるが、反対にハーフミラ−53を透過した光を第1の
光検知器51に、ハーフミラ−53によって反射された
光を第2の光検知器52に入力するように構成すること
も可能である。
Although FIG. 2 shows that the light reflected by the half mirror 53 is input to the first photodetector 51 and the light transmitted through the half mirror 53 is input to the second photodetector 52, the opposite is true. It is also possible to configure such that the light transmitted through the half mirror 53 is input to the first photodetector 51 and the light reflected by the half mirror 53 is input to the second photodetector 52.

また光検知器51および52として例えば電荷結合デバ
イス(charge−coupling device
s CCD)等のラインセンサを用いている。
The photodetectors 51 and 52 may be, for example, charge-coupling devices.
A line sensor such as s CCD) is used.

前述の如く明視野25において反射され光検知器51に
入射する光のうち、導体上面において反射される光が他
の導体の台形斜面部や基板の部分で反射される光に比べ
て強い。そこで第1の光検知器51を用いて強い反射光
の得られる区間を検知することによって導体パターン−
1:幅33の測長を行う。
As described above, among the light reflected in the bright field 25 and incident on the photodetector 51, the light reflected on the upper surface of the conductor is stronger than the light reflected on the trapezoidal slope portion of the other conductor or the substrate portion. Therefore, by using the first photodetector 51 to detect the section where strong reflected light is obtained, the conductor pattern
1: Measure width 33.

一方線状の暗視野26において導体31の部分は全く暗
黒になるのに対し、基板32の部分は明視野27から基
板内部に拡散した光によって明るくなる。かかる光拡散
を伴う基板部分に挟まれた暗黒の区間を第2の光検知器
52を用いて検知することによって導体パターン下幅3
4の測長を行う。即ら本発明になるパターン検査装置は
台形状断面を有する導体パターンの、上幅33と下幅3
4の測長を同時に行うことが可能である。
On the other hand, in the linear dark field 26, the portion of the conductor 31 becomes completely dark, whereas the portion of the substrate 32 becomes bright due to the light diffused into the substrate from the bright field 27. The lower width 3 of the conductor pattern is detected by using the second photodetector 52 to detect the dark area sandwiched between the substrate parts with such light diffusion.
Measure the length of step 4. That is, the pattern inspection device according to the present invention inspects the upper width 33 and lower width 3 of a conductor pattern having a trapezoidal cross section.
It is possible to perform four length measurements at the same time.

このように導体パターンの−L幅33と下幅34の検査
を同時に行うことにより、導体の」二部に現れた欠損や
膨らみ等の欠陥は勿論、導体の一ト部に現れた欠損や膨
らみ、不要な導体残滓等の欠陥を検出して良否を判定す
る等欠陥の検出精度を向上さゼることができる。
In this way, by simultaneously inspecting the -L width 33 and the bottom width 34 of the conductor pattern, not only defects such as chips and bulges that appear on the second part of the conductor, but also defects and bulges that appear on the top part of the conductor can be detected. It is possible to improve defect detection accuracy by detecting defects such as unnecessary conductor residue and determining pass/fail.

しかし第1の光検知器51が検知した導体パターンの上
幅33は明視野25における導体パターンの上幅であり
、第2の光検知器52が検知した専体パタ−ンの下幅3
4は暗視野26に才月ノる導体パターンの上幅である。
However, the upper width 33 of the conductor pattern detected by the first photodetector 51 is the upper width of the conductor pattern in the bright field 25, and the lower width 33 of the exclusive pattern detected by the second photodetector 52.
4 is the upper width of the conductor pattern in the dark field 26.

このようにWなった位置において検知した下幅および上
幅から直ちに導体パターンの良否を判定ずろことはでき
ない。そこで本発明になるパターン検査装置は第2図に
示す位置ずれ補正手段を具えている。
It is not possible to immediately determine the quality of the conductor pattern from the lower width and upper width detected at the W position. Therefore, the pattern inspection apparatus according to the present invention is equipped with a positional deviation correcting means shown in FIG.

第1の光検知器51、第2の光検知器52で検知した信
号はそれぞれ二値化された後、測に回WFr 55.5
6でに幅または下幅の寸法値に変換され比較回路57に
人力される。比較回路57では入力された上幅と予め設
定されている上幅の1m限・下19II]、入力された
下幅と予め設定されている下幅の一十一限・下限、およ
び入力された上下幅の差と予め設定されている上下幅の
差の上限・下限等を比較している。
After the signals detected by the first photodetector 51 and the second photodetector 52 are respectively binarized, the signal becomes WFr 55.5 times.
At step 6, it is converted into a width or bottom width dimension value and inputted to a comparison circuit 57. The comparison circuit 57 compares the input upper width and the preset upper width 1m limit/lower 19II], the input lower width and the preset lower width 111/lower limit, and the input The difference between the upper and lower widths is compared with the preset upper and lower limits of the difference between the upper and lower widths.

印刷配線板3はステージ6の上に搭載されており被検査
領域は一定速度で移動する。そこで検知した信号を先に
出力する側の回路に位置ずれを補正する手段即ち遅延回
路58を挿入し、検知した信号を後からJB力する側と
比較回!/357において時間的に一致させている。な
おjjllf、回路58を第1の光検知器51の方に挿
入するか、第2の光検知器520)方に挿入するかはス
テージ6の移り・h方向によって決まり、遅延回路5H
の前後に挿入されているJ巽択スイッチ59を切り換え
ることによって対処することができる。
The printed wiring board 3 is mounted on a stage 6, and the area to be inspected moves at a constant speed. Therefore, a means for correcting the positional deviation, that is, a delay circuit 58, is inserted into the circuit on the side that outputs the detected signal first, and compared with the side that outputs the detected signal later! /357 is made to match in time. Note that whether the circuit 58 is inserted into the first photodetector 51 or the second photodetector 520 depends on the movement of the stage 6 and the h direction, and the delay circuit 5H
This can be handled by switching the J-selection switch 59 inserted before and after the .

〔発明の効果〕 上述の如(本発明に、Lれば微細化、高密度化されたパ
ターンの検査に適し、欠陥の検出精度を一層向上させた
パターン検査方法を提供することができる。
[Effects of the Invention] As described above, the present invention can provide a pattern inspection method that is suitable for inspecting finer, higher-density patterns and further improves defect detection accuracy.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明になるパターン検査装置の一実施例を示
す斜視図、 第2図は位置ずれ補正手段を示すブロック図、第3図お
よび第4図は従来のパターン検査方法を示ず斜視図で、 第3図は導体パターンと基板の反射率の差を利用する方
法、 第4図は基板の光拡散性を利用する方法、である。図に
おいて 2は#明部、      3は印刷配線板、5は光検知
部、     6はステージ、21は光源、     
  22はレンズ、23は光遮費部、    24はマ
スク、25は明視野、     26は暗視野、27は
照明スポット、  31は導体パターン、32は基板、
      33は導体1−幅、34は導体下幅、  
  51.52は光検知器、53はハーフミラ−154
はレンズ、 55.56は測長回路、  57は比較lI旧洛、58
は遅延回路、     59は選17(スイッチ、をそ
れぞれ表す。
FIG. 1 is a perspective view showing an embodiment of a pattern inspection device according to the present invention, FIG. 2 is a block diagram showing a positional deviation correction means, and FIGS. 3 and 4 are perspective views showing a conventional pattern inspection method. In the figures, Fig. 3 shows a method that uses the difference in reflectance between the conductor pattern and the substrate, and Fig. 4 shows a method that uses the light diffusivity of the substrate. In the figure, 2 is a bright part, 3 is a printed wiring board, 5 is a light detection part, 6 is a stage, 21 is a light source,
22 is a lens, 23 is a light shielding part, 24 is a mask, 25 is a bright field, 26 is a dark field, 27 is an illumination spot, 31 is a conductive pattern, 32 is a substrate,
33 is the conductor 1 width, 34 is the lower width of the conductor,
51.52 is a photodetector, 53 is a half mirror 154
is the lens, 55.56 is the length measurement circuit, 57 is the comparison lI former Raku, 58
59 represents a delay circuit, and 59 represents a selector 17 (switch).

Claims (1)

【特許請求の範囲】 1)光拡散性を有する基板上に形成された導体パターン
等の欠陥を検査するに際し、 明視野(25)中に線状の暗視野(26)を有する照明
スポット(27)を被検査領域に照射し、 該明視野(25)において検知した導体(31)の幅を
台形状断面の上幅(33)となし、 該暗視野(26)において検知した導体(31)の幅を
台形状断面の下幅(34)となし、 該台形状断面の上幅(33)および下幅(34)の検出
を同時に行うことを特徴とするパターン検査方法。 2)光拡散性を有する基板上に形成された導体パターン
等の欠陥を検査するに際し、 被検査領域に明視野(25)中に暗視野(26)を有す
る照明スポット(27)を照射する照明部(2)と、該
明視野(25)において反射される光を検知する第1の
光検知器(51)と、 該暗視野(26)において光拡散を伴う基板部分を検知
する第2の光検知器(52)とを具えてなることを特徴
とするパターン検査装置。 3)第1の光検知器(51)が検知する導体幅の位置と
第2の光検知器(52)が検知する導体幅の位置との、
位置ずれを補正する手段を具えた特許請求の範囲第2項
記載のパターン検査装置。
[Claims] 1) When inspecting defects in a conductive pattern, etc. formed on a substrate having light diffusing properties, an illumination spot (27) having a linear dark field (26) in a bright field (25) is used. ) to the area to be inspected, the width of the conductor (31) detected in the bright field (25) is taken as the upper width (33) of the trapezoidal cross section, and the conductor (31) detected in the dark field (26) is set as the lower width (34) of the trapezoidal cross-section, and the upper width (33) and lower width (34) of the trapezoidal cross-section are simultaneously detected. 2) Illumination that illuminates the inspection area with an illumination spot (27) having a dark field (26) in a bright field (25) when inspecting defects such as a conductor pattern formed on a substrate with light diffusing properties. (2), a first photodetector (51) that detects reflected light in the bright field (25), and a second photodetector (51) that detects a substrate portion with light diffusion in the dark field (26). A pattern inspection device comprising: a photodetector (52). 3) The position of the conductor width detected by the first photodetector (51) and the position of the conductor width detected by the second photodetector (52),
The pattern inspection apparatus according to claim 2, further comprising means for correcting positional deviation.
JP15568585A 1985-07-15 1985-07-15 Pattern inspecting method and its device Pending JPS6215442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15568585A JPS6215442A (en) 1985-07-15 1985-07-15 Pattern inspecting method and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15568585A JPS6215442A (en) 1985-07-15 1985-07-15 Pattern inspecting method and its device

Publications (1)

Publication Number Publication Date
JPS6215442A true JPS6215442A (en) 1987-01-23

Family

ID=15611316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15568585A Pending JPS6215442A (en) 1985-07-15 1985-07-15 Pattern inspecting method and its device

Country Status (1)

Country Link
JP (1) JPS6215442A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014238360A (en) * 2013-06-10 2014-12-18 レーザーテック株式会社 Synchronization device and inspection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014238360A (en) * 2013-06-10 2014-12-18 レーザーテック株式会社 Synchronization device and inspection device

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