JPS62151765U - - Google Patents
Info
- Publication number
- JPS62151765U JPS62151765U JP2798587U JP2798587U JPS62151765U JP S62151765 U JPS62151765 U JP S62151765U JP 2798587 U JP2798587 U JP 2798587U JP 2798587 U JP2798587 U JP 2798587U JP S62151765 U JPS62151765 U JP S62151765U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- solid
- imaging device
- state imaging
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第１図は固体撮像デバイスをパツケージに組み
込んだ断面図、第２図は第１図の点線領域Ａの拡
大図である。
１……パツケージ、２……半導体基板、３……
フイルタ用ガラス基板、４……保護ガラス、５…
…配線用金属線、６，７……半導体およびフイル
ターの有効絵素領域。
FIG. 1 is a sectional view of a solid-state imaging device assembled into a package, and FIG. 2 is an enlarged view of the dotted line area A in FIG. 1...Package, 2...Semiconductor substrate, 3...
Glass substrate for filter, 4... Protective glass, 5...
... Metal wire for wiring, 6, 7... Effective picture element area of semiconductor and filter.
Claims (1)
に接して色分離用のフイルターを設けた固体撮像
装置において、前記フイルターの端部と半導体基
板上の光電変換部との距離を少くとも前記フイル
ターの厚さ以上とすることを特徴とする固体撮像
装置。 In a solid-state imaging device that has an imaging function on a semiconductor substrate and is provided with a color separation filter in contact with the semiconductor substrate, the distance between the end of the filter and the photoelectric conversion section on the semiconductor substrate is at least A solid-state imaging device characterized in that the thickness is greater than or equal to .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2798587U JPS62151765U (en) | 1987-02-26 | 1987-02-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2798587U JPS62151765U (en) | 1987-02-26 | 1987-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62151765U true JPS62151765U (en) | 1987-09-26 |
Family
ID=30830531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2798587U Pending JPS62151765U (en) | 1987-02-26 | 1987-02-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62151765U (en) |
-
1987
- 1987-02-26 JP JP2798587U patent/JPS62151765U/ja active Pending