JPS62140295A - バイポーラｒａｍセル - Google Patents

バイポーラｒａｍセル

Info

Publication number
JPS62140295A
JPS62140295A JP61299770A JP29977086A JPS62140295A JP S62140295 A JPS62140295 A JP S62140295A JP 61299770 A JP61299770 A JP 61299770A JP 29977086 A JP29977086 A JP 29977086A JP S62140295 A JPS62140295 A JP S62140295A
Authority
JP
Japan
Prior art keywords
transistor
transistors
base
current
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61299770A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0421278B2 (https=
Inventor
マーク・エス・ビリテラ
ジエイムス・ジエイ・ステイパナツク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS62140295A publication Critical patent/JPS62140295A/ja
Publication of JPH0421278B2 publication Critical patent/JPH0421278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP61299770A 1985-12-16 1986-12-16 バイポーラｒａｍセル Granted JPS62140295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/809,982 US4701882A (en) 1985-12-16 1985-12-16 Bipolar RAM cell
US809982 1991-12-18

Publications (2)

Publication Number Publication Date
JPS62140295A true JPS62140295A (ja) 1987-06-23
JPH0421278B2 JPH0421278B2 (https=) 1992-04-09

Family

ID=25202659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61299770A Granted JPS62140295A (ja) 1985-12-16 1986-12-16 バイポーラｒａｍセル

Country Status (2)

Country Link
US (1) US4701882A (https=)
JP (1) JPS62140295A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995001A (en) * 1988-10-31 1991-02-19 International Business Machines Corporation Memory cell and read circuit
US4964081A (en) * 1989-08-11 1990-10-16 Cray Research, Inc. Read-while-write ram cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5798189A (en) * 1980-11-26 1982-06-18 Ibm Multiplex address specifiable memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125877A (en) * 1976-11-26 1978-11-14 Motorola, Inc. Dual port random access memory storage cell
JPS5665395A (en) * 1979-10-30 1981-06-03 Fujitsu Ltd Bit-line voltage level setting circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5798189A (en) * 1980-11-26 1982-06-18 Ibm Multiplex address specifiable memory device

Also Published As

Publication number Publication date
JPH0421278B2 (https=) 1992-04-09
US4701882A (en) 1987-10-20

Similar Documents

Publication Publication Date Title
US4322820A (en) Semiconductor integrated circuit device
US4464735A (en) Semiconductor memory
US4442509A (en) Bit line powered translinear memory cell
JPH0345478B2 (https=)
EP0418794B1 (en) Semiconductor memory device
JPS62141696A (ja) バイポーラｒａｍセル
US3821719A (en) Semiconductor memory
EP0031009A1 (en) Multiple access memory cell and its use in a memory array
US4298961A (en) Bipolar memory circuit
JPS62140295A (ja) バイポーラｒａｍセル
US4745580A (en) Variable clamped memory cell
US4456979A (en) Static semiconductor memory device
US4922411A (en) Memory cell circuit with supplemental current
US4899311A (en) Clamping sense amplifier for bipolar ram
JPS61294686A (ja) メモリ回路
US4703458A (en) Circuit for writing bipolar memory cells
JPS6079772A (ja) 半導体記憶装置
JPH0247037B2 (https=)
JPS6047667B2 (ja) 記憶装置
JPS62140293A (ja) メモリ回路
JPS58150189A (ja) 半導体記憶装置
JPH0585999B2 (https=)
JPS60251597A (ja) 半導体メモリセル
JPS6249677B2 (https=)
JPH0318273B2 (https=)