JPS62136870A - Photoelectric conversion element and manufacture of the same - Google Patents
Photoelectric conversion element and manufacture of the sameInfo
- Publication number
- JPS62136870A JPS62136870A JP60276708A JP27670885A JPS62136870A JP S62136870 A JPS62136870 A JP S62136870A JP 60276708 A JP60276708 A JP 60276708A JP 27670885 A JP27670885 A JP 27670885A JP S62136870 A JPS62136870 A JP S62136870A
- Authority
- JP
- Japan
- Prior art keywords
- blocking layer
- layer
- conversion element
- photoelectric conversion
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000000903 blocking effect Effects 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000010936 titanium Substances 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000009832 plasma treatment Methods 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910004541 SiN Inorganic materials 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光電変換素子に係り、特にシリコン主成分とす
る非晶質半導体で構成されたイメージセンサ、光センチ
等に好適な光電変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a photoelectric conversion element, and more particularly to a photoelectric conversion element suitable for image sensors, optical sensors, etc., which is constructed of an amorphous semiconductor mainly composed of silicon.
シリコンを主成分とした非晶質半導体（以下ａ −ＳＬ
と云う）は、グロー放電法、スパッタ法等で形成される
。そしてホウ素（Ｂ）やリン（Ｐ）を含むガスを導入し
た雰囲気で成膜することで、−ｐ型半導体として働くｐ
層、ｎ型半導体として働くｎ層あるいは真性半導体とし
て働くＬ層を形成することができる。Amorphous semiconductor mainly composed of silicon (hereinafter referred to as a-SL)
) is formed by a glow discharge method, a sputtering method, or the like. Then, by forming a film in an atmosphere containing gas containing boron (B) and phosphorus (P), p
An n layer acting as an n-type semiconductor or an L layer acting as an intrinsic semiconductor can be formed.
さらにａ −Ｓｉｇは光電変換特性がすぐれていること
、グロー放電法やスパッタ法で成膜が可能なため、低温
で大面積に容易に成膜が可能であること、縮小光学系を
用いない密着型であるから、読取装置として実用化され
ている。Furthermore, a-Sig has excellent photoelectric conversion characteristics, can be formed into a film by glow discharge method or sputtering method, so it can be easily formed into a film over a large area at low temperature, and it can be used in close contact without using a reduction optical system. Because it is a type, it has been put into practical use as a reading device.
従来、ａ−８Ｌを用いた光電変換素子は、第４図に示す
ように、ガラス基板１、この基板上に形成した下部電極
２、この電極上に形成した光電変換をするａ−８ｊａ層
３、このａ−８Ｌ層上に形成した上部透明電極４より構
成されている。しかし、この構造ではａ−８＝層と電極
の界面が不安定である。このため、特開昭５８−８４４
５７で述べられているように暗電流が大きくなりやすく
結果として明電流と暗電流の比が小さくなり、コントラ
ストが大きくとれなかった。Conventionally, a photoelectric conversion element using A-8L has a glass substrate 1, a lower electrode 2 formed on this substrate, and an A-8JA layer 3 formed on this electrode for photoelectric conversion, as shown in FIG. , an upper transparent electrode 4 formed on this a-8L layer. However, in this structure, the interface between the a-8=layer and the electrode is unstable. For this reason, JP-A-58-844
As described in No. 57, the dark current tends to increase, and as a result, the ratio of bright current to dark current becomes small, making it difficult to obtain a large contrast.
本発明の目的は上記した従来技術の問題点を解決し、暗
゛戒流が小さく、コントラストの大きいα−８↓光電変
換素子を提供するにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to provide an α-8↓ photoelectric conversion element with small dark current and high contrast.
上記目的はａ−８Ｌ層を電子の阻止層と正孔の阻止層で
はさまれた構造とすることによって達成される。The above object is achieved by making the a-8L layer sandwiched between an electron blocking layer and a hole blocking layer.
そして電子の阻止層は、高融点金属と水素等を含むα−
８Ｌとの反応生成物である高融点金属のブイ化物がａ−
８＝層への電子の阻止層となることを見い出したことに
基づいて形成され、正孔の阻止層は特開昭５８−８４４
５７に示されているよ５に酸化膜やｎ型半導体が正孔の
阻止層となる事実に基づいて形成した。The electron blocking layer is an α-
The high melting point metal buide which is the reaction product with 8L is a-
It was formed based on the discovery that it acts as a blocking layer for electrons to the 8= layer, and the hole blocking layer is disclosed in Japanese Patent Application Laid-Open No. 58-844.
As shown in No. 57, 5 was formed based on the fact that an oxide film or an n-type semiconductor acts as a hole blocking layer.
なお、高融点金属のケイ化物は、金属とａ−８＝の界面
に熱処理のみで容易に形成できる。そして一度形成する
と熱安定性良好である。従って製作が容易であり、形成
されたグイ化物は信頼性がある。Note that the silicide of the high melting point metal can be easily formed at the interface between the metal and a-8= by only heat treatment. Once formed, it has good thermal stability. Therefore, it is easy to manufacture, and the formed guidide is reliable.
以下、本発明で使用する材料等に説明する。The materials used in the present invention will be explained below.
本発明で用いるシリコンを主成分とするα−Ｓ＝は、電
子の阻止層を形成する面にはＨ，Ｏ，ハロゲン元素、
Ｎ、 Ｂ、 Ｐ、 Ａｌｌ、 Ａｓのうちから選ばれた
少なくとも一種類の元素を含んでいる。The α-S= mainly composed of silicon used in the present invention has H, O, and halogen elements on the surface forming the electron blocking layer.
Contains at least one element selected from N, B, P, All, and As.
高融点金属は、ＴＬ、 Ｃｒ、 Ｚｒ、 Ｍｏ、 Ｈｆ
、 Ｔａ、 Ｗ。High melting point metals are TL, Cr, Zr, Mo, Hf
, Ta, W.
Ｃｏ、 ＮＬ、 ＲＪ、 Ｉｒ、等であり、これら金属
は単独もしくは二種類以上用いて電極を形成する。また
、上記のα−８Ｌ層のＨｌｏ、ハロゲン元素を含む面と
は、５０℃〜３００℃で加熱して反応させて上記金属の
ゲイ化物よりなる電子阻止層を形成する。These metals include Co, NL, RJ, Ir, etc., and these metals may be used alone or in combination of two or more to form an electrode. Further, the surface of the α-8L layer containing the Hlo and halogen elements is heated at 50° C. to 300° C. to react with each other to form an electron blocking layer made of the above-mentioned metal ganide.
正孔阻止層は上記のようにニーＳＬ層のＮ、 Ｐ。The hole blocking layer is made of N and P of the knee SL layer as described above.
Ａｓ、 Ｓｂ、 ＢＬのうちから選ばれた少なくとも一
種類を含んだ層である。正孔阻止層はａ−８ｉ、層のり
゛イ化物からなる電子阻止層を形成した西方の表面に金
属酸化物層、金属窒化物を設げて形成してもよい。具体
的には、Ｓ＝Ｎ、 ５ＬＯｚ、 ）ｄｈＯ５゜８？ＬＯ
２，Ｉｎ２Ｏ５，Ｚ？ＬＯ，Ｔｏ２０ｓ、 Ｃｄ−００
うちから選ばれた少なくとも−ｍ＠の材料で正孔阻止層
を形成する。This layer contains at least one type selected from As, Sb, and BL. The hole blocking layer may be formed by providing a metal oxide layer or a metal nitride on the western surface of the a-8i layer on which the electron blocking layer made of a dihydride is formed. Specifically, S=N, 5LOz, )dhO5゜8? L.O.
2, In2O5, Z? LO, To20s, Cd-00
A hole blocking layer is formed using a material selected from among the materials with at least -m@.
上部透明電極は、ＺｎＯ，５７Ｌ０２． Ｉ？Ｌ２０ｓ
、 Ｓ？Ｌ０２＋■？Ｌ２０５等ヲスバッタ法によって
形成する。The upper transparent electrode is made of ZnO, 57L02. I? L20s
, S? L02+■? It is formed by a scattering method such as L205.
以下、本発明を実施例によって説明する。 Hereinafter, the present invention will be explained by examples.
実施例を
最初にａ−３Ｌ光電変換素子の製造方法について説明す
る。In an example, first, a method for manufacturing an a-3L photoelectric conversion element will be described.
第１図に示すようにコーティング７０５９等のガラス基
板１にスパッタリング法等の技術を用いて高融点金属、
たとえばＴ↓膜を被膜し、ホトエツチングプロセスによ
り下部電極２、配線パターン（図示せず）を形成する。As shown in FIG. 1, coating 7059 etc. on the glass substrate 1 is coated with a high melting point metal using a technique such as a sputtering method.
For example, a T↓ film is coated, and a lower electrode 2 and a wiring pattern (not shown) are formed by a photo-etching process.
下部電極２を形成したガラス基板１をグロー放電装置に
設置し、真空排気した後水素を導入して基板表面の水素
プラズマ処理を行なう。次いで、所定量のモノシラン５
ＬＨａと水素Ｈ２を導入してｂ層のａ −３Ｌ層３を４
００ｎｍ程度形成し、更に所定量の８ＬＨａとアンモニ
ヤＮＨ３を導入して約３０話の窒化シリコン（８ＬＮ）
の正孔阻止層５を形成する。ａ−８ｉｚ層３とＳＬＮの
正孔層５を形成した後に、２１０℃の温度で約２０分間
の熱処理を行なって、ａ−８＝層３とＴＬ製上下部電極
２反応層よりなる電子阻子層６を形成する。ホトリソ法
によって８．、Ｎ、α−８Ｌ。The glass substrate 1 with the lower electrode 2 formed thereon is placed in a glow discharge device, and after being evacuated, hydrogen is introduced to perform hydrogen plasma treatment on the substrate surface. Then, a predetermined amount of monosilane 5
By introducing LHa and hydrogen H2, the a-3L layer 3 of the b layer becomes 4
Silicon nitride (8LN) is formed with a thickness of about 00nm, and further introduces a predetermined amount of 8LHa and ammonia NH3 to form silicon nitride (8LN).
A hole blocking layer 5 is formed. After forming the a-8iz layer 3 and the SLN hole layer 5, heat treatment is performed at a temperature of 210° C. for about 20 minutes to form an electron blocking layer consisting of the a-8=layer 3 and the reaction layer of the upper and lower electrodes 2 made of TL. A child layer 6 is formed. 8. By photolithography. , N, α-8L.
チタンとのクイ化物を選択エツチングする。チタンとの
ケイ化物はａ−８ｊ、のエツチング量を少し多くするこ
とによってａ−８Ｌと同時に除去可能であるが、Ｓ、、
Ｎ、 ａ−８Ｌを選択エツチングしてから、前述の熱処
理によってチタンとのケイ化物を形成してもよい。その
後、ＩＴＯ（Ｉ？ＬＪｓ＋８−！ ）よりなる透明導電
膜を形成して光電変換素子を得た。Selective etching of the titanium compound. Silicides with titanium can be removed at the same time as a-8L by slightly increasing the etching amount of a-8j, but S...
After selectively etching N, a-8L, a silicide with titanium may be formed by the heat treatment described above. Thereafter, a transparent conductive film made of ITO (I?LJs+8-!) was formed to obtain a photoelectric conversion element.
第２図の曲線７．８は、本実施例で形成した光電変換素
子の暗電流の電圧特性、明電流の電圧特性である。また
、第２図の曲線９，１ｏはＳ、ｌ、Ｎよりなる正孔阻止
層もしくはチタンのゲイ化物よりなる電子阻止層のない
場合の暗電流の電圧特性である。これらの特性を比較す
ると８ＬＮ、によって正孔が、チタンのゲイ化物によっ
て電子が阻止されていることが判る。しかも、ＳＡＮと
チタンのグイ化物の両方を形成することにより暗電流が
よくおさえられていることがわかる。Curves 7.8 in FIG. 2 are the dark current voltage characteristics and bright current voltage characteristics of the photoelectric conversion element formed in this example. Further, curves 9 and 1o in FIG. 2 are the dark current voltage characteristics in the case where there is no hole blocking layer made of S, 1, or N or an electron blocking layer made of a titanium ganide. Comparing these characteristics, it can be seen that holes are blocked by 8LN and electrons are blocked by the titanium ganide. Furthermore, it can be seen that the dark current is well suppressed by forming both the SAN and the titanium oxide.
この結果、広い電圧領域で大きなコントラストが取れる
と共に、電圧変動に強い光電変換素子ができる。As a result, a photoelectric conversion element with high contrast in a wide voltage range and resistant to voltage fluctuations can be produced.
なお、α−８＝とチタンのゲイ化物をつくるために２１
０℃の熱処理を施したが、温度を２１０℃に固定するこ
となく５０℃〜５００℃の温度で処理をすれば効果があ
る。金属の種類やａ−８ｉ−の膜質により５０℃〜３０
０℃の範囲で最適温で処理することにより本発明の効果
をより大きくすることができる。In addition, in order to make a gay compound of α-8= and titanium, 21
Although heat treatment was carried out at 0°C, it is effective if the temperature is not fixed at 210°C but is carried out at a temperature of 50°C to 500°C. 50℃~30℃ depending on the type of metal and the film quality of a-8i-
The effects of the present invention can be further enhanced by processing at an optimal temperature within the range of 0°C.
実施例λ
実施例１では正孔阻止層と上部透明電極をそれぞれ別に
設けたが、同一材料で形成することも可能である。ＩＴ
Ｏ（Ｉ？Ｌ２０ｉ ＋ ８％０２ ）透明電極はｎ型の
伝導を示すことが知られており、この特性を利用すると
第３図に示すような構造でも本発明の目的を実現するこ
とができる。Example λ In Example 1, the hole blocking layer and the upper transparent electrode were provided separately, but they can also be made of the same material. IT
It is known that the O(I?L20i + 8%02) transparent electrode exhibits n-type conduction, and by utilizing this property, the object of the present invention can be achieved even with the structure shown in Figure 3. .
又、本発明は高融点金属よりなる下部電極と４−８＝を
熱処理することで界面にグイ化物を形成し、上部電極に
光を透過する透明電極を用いたが、上部電極と下部電極
を反対にしても形成可能である。すなわち、下部電極に
透明電極を用い、その上に正孔阻止層、ａ −ＳＡ層、
高融点金属よりなる上部電極を形成し、その後、熱処理
により、α−８Ｌと高融点金属との界面にグイ化物を形
成することによっても本発明を実施することができる。Furthermore, in the present invention, a lower electrode made of a high-melting point metal and 4-8= are heat-treated to form a guiride at the interface, and a transparent electrode that transmits light is used as the upper electrode. It can also be formed in the opposite direction. That is, a transparent electrode is used as the lower electrode, and a hole blocking layer, an a-SA layer,
The present invention can also be carried out by forming an upper electrode made of a high-melting point metal, and then heat-treating to form a guiride at the interface between α-8L and the high-melting point metal.
以上述べたように本発明によれば、暗電流が小さく、コ
ントラストの大きいａ−８Ｌ光電変換素子が得られる。As described above, according to the present invention, an a-8L photoelectric conversion element with low dark current and high contrast can be obtained.
この光電変換素子を用いると忠実な画像読み取りが可能
である。Using this photoelectric conversion element, faithful image reading is possible.
第１図は本発明の一実施例を示す光電変換素子の断面図
、第２図は本発明にょる光電変換素子の明電流および暗
電流の電圧特性図、第３図は本発明の他の一実施例を示
す光電変換素子の断面図、第４図は従来の光電変換素子
を示す断ｌｌ１ｌｒ図である。
１・・・ガラス基板、 ５・・・正孔阻止層、２・
・・回部電極、 ６・・・電子阻止層、３ ・・
−ａ −ＳＬ層、 ７，８，９．１０−・・曲線、
４・・・上部透明電極。
躬 １ 閉
／χ
第 ２２
ｆ。FIG. 1 is a cross-sectional view of a photoelectric conversion element showing one embodiment of the present invention, FIG. 2 is a voltage characteristic diagram of bright current and dark current of the photoelectric conversion element according to the present invention, and FIG. 3 is a diagram of voltage characteristics of another photoelectric conversion element of the present invention. FIG. 4 is a cross-sectional view of a photoelectric conversion element showing one embodiment. FIG. 4 is a cross-sectional view showing a conventional photoelectric conversion element. DESCRIPTION OF SYMBOLS 1...Glass substrate, 5...Hole blocking layer, 2...
...circuit electrode, 6...electron blocking layer, 3...
-a -SL layer, 7, 8, 9.10-... curve,
4... Upper transparent electrode.躬 1 closed/χ 22nd f.
Claims (1)
て働く二つの導電膜によって挾んだ構造とし、かつ前記
非晶質半導体と金属膜の一方の界面に前記金属膜との反
応層よりなる電子阻止層を設け、他方の界面に正孔阻止
層を設けたことを特徴とする光電子変換素子。 ２、前記の二つの導電膜のうちで前記の非晶質半導体と
反応して電子阻止層を形成する導電膜が、Ｔｉ、Ｃｒ、
Ｚｒ、Ｎｂ、Ｍｏ、Ｈｆ、Ｔａ、Ｗ、Ｃｏ、Ｎｉ、Ｒｋ
、Ｉｒのうちから選ばれた少なくとも一種類の高融点金
属であることを特徴とする特許請求の範囲第１項記載の
光電変換素子。 ３、前記のシリコンを主成分とする非晶質半導体は、非
晶質半導体の一方の面にＨ、Ｏ、ハロゲン元素、Ｎ、Ｂ
、Ｐ、Ａｌ、Ａｓのうちから選ばれた少なくとも一種類
の元素が含まれている層を有することを特徴とする特許
請求の範囲第１項もしくは第２項記載の光電変換素子。 ４、前記の正孔阻止層がＳｉＮ、ＳｉＯ＿２、Ａｌ＿２
Ｏ＿３、ＳｎＯ＿３Ｉｎ＿２Ｏ＿３、ＺｎＯ、Ｔａ＿２
Ｏ＿５、ＣｄＯのうちから選ばれた少なくとも一種類の
化合物よりなることを特徴とする特許請求の範囲第１項
、第２項もしくは第３項記載の光電変換素子。 ５、前記の正孔阻止層が、前記のシリコンを主成分とす
る非晶質半導体の導電膜と反応する面と反対側の面にＮ
、Ｐ、Ａｓ、Ｓｂ、Ｂｉのうちから選ばれた少なくとも
一種類の元素を含む層からなることを特徴とする特許請
求の範囲第１項、第２項もしくは第３項記載の光電変換
素子。 ６、シリコンを主成分とする非晶質半導体の両面に、電
極として働く二つの導電膜を形成し、５０℃〜３００℃
で熱処理することにより非晶質半導体と一つの導電膜の
界面とを反応させて電子阻止層を形成することを特徴と
する光電変換素子の製造方法。 ７、シリコンを主成分とする非晶質半導体の一方の面に
、ＳｉＮ、ＳｉＯ＿２、Ａｌ＿２Ｏ＿３、ＳｎＯ＿２、
Ｉｎ＿２Ｏ＿３、ＺｎＯ、Ｔａ＿２Ｏ＿５、ＣｄＯのう
ちから選ばれた少なくとも一種類の化合物により正孔阻
止層を設け、正孔阻子層と上記非晶質半導体の正孔阻子
層を設けた面と反対側の面に導電膜を形成し、５０℃〜
３００℃で熱処理することにより非晶質半導体と一つの
導電膜の界面とを反応させて電子阻子層を形成すること
を特徴とする光電変換素子の製造方法。[Scope of Claims] 1. A structure in which an amorphous semiconductor mainly composed of silicon is sandwiched between two conductive films serving as electrodes, and the metal is provided at one interface between the amorphous semiconductor and the metal film. 1. A photoelectron conversion element comprising an electron blocking layer formed of a layer that reacts with a film, and a hole blocking layer provided at the other interface. 2. Of the two conductive films, the conductive film that reacts with the amorphous semiconductor to form an electron blocking layer is made of Ti, Cr,
Zr, Nb, Mo, Hf, Ta, W, Co, Ni, Rk
The photoelectric conversion element according to claim 1, characterized in that the photoelectric conversion element is at least one kind of high melting point metal selected from among , Ir, and Ir. 3. The amorphous semiconductor whose main component is silicon has H, O, halogen elements, N, and B on one surface of the amorphous semiconductor.
, P, Al, and As. 4. The hole blocking layer is SiN, SiO_2, Al_2
O_3, SnO_3In_2O_3, ZnO, Ta_2
The photoelectric conversion element according to claim 1, 2, or 3, characterized in that it is made of at least one compound selected from O_5 and CdO. 5. The hole blocking layer has N on the surface opposite to the surface that reacts with the conductive film of the silicon-based amorphous semiconductor.
, P, As, Sb, and Bi. 6. Two conductive films that act as electrodes are formed on both sides of an amorphous semiconductor whose main component is silicon, and heated to 50°C to 300°C.
1. A method for manufacturing a photoelectric conversion element, which comprises forming an electron blocking layer by reacting an amorphous semiconductor with an interface of one conductive film by heat treatment. 7. SiN, SiO_2, Al_2O_3, SnO_2,
A hole blocking layer is provided with at least one compound selected from In_2O_3, ZnO, Ta_2O_5, and CdO, and a hole blocking layer and the side opposite to the surface on which the hole blocking layer of the amorphous semiconductor is provided. A conductive film is formed on the surface of the
A method for manufacturing a photoelectric conversion element, which comprises forming an electron blocking layer by reacting an amorphous semiconductor with an interface of one conductive film by heat treatment at 300°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60276708A JPS62136870A (en) | 1985-12-11 | 1985-12-11 | Photoelectric conversion element and manufacture of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60276708A JPS62136870A (en) | 1985-12-11 | 1985-12-11 | Photoelectric conversion element and manufacture of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62136870A true JPS62136870A (en) | 1987-06-19 |
Family
ID=17573217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60276708A Pending JPS62136870A (en) | 1985-12-11 | 1985-12-11 | Photoelectric conversion element and manufacture of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444277B1 (en) * | 1993-01-28 | 2002-09-03 | Applied Materials, Inc. | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates |
-
1985
- 1985-12-11 JP JP60276708A patent/JPS62136870A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444277B1 (en) * | 1993-01-28 | 2002-09-03 | Applied Materials, Inc. | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates |
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