JPS62136566A - Method and apparatus for vapor deposition - Google Patents

Abstract

PURPOSE:To increase a vapor deposition rate and to extremely efficiently form a vapor deposited layer by reflecting the vapor flow from a vapor source by vapor flow reflectors having reflective surfaces held at a high temp. so that the vapor deposition material is deposited by evaporation on both faces of a substrate. CONSTITUTION:This vapor deposition device is formed of the vapor source 2, >=1 pairs of the vapor flow reflectors 3, 4 disposed to face each other and the long-sized substrate 1 to be passed continuously between the reflectors 3 and 4. The vapor flow 7 from the vapor source 2 is reflected by the reflective surfaces of the reflectors 3, 4 heated by a heating means so as to be held in a high-temp. state and is simultaneously deposited by evaporation on both faces of the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor deposition method and a vapor deposition apparatus for producing, for example, a magnetic recording medium having ferromagnetic metal layers on both sides.

[Conventional technology]

For example, when forming vapor deposited layers on both sides of a substrate, such as when manufacturing a magnetic recording medium in which magnetic M of six ferromagnetic metals are formed on both sides of a substrate made of plastic film, etc., by vapor deposition, In conventional vapor deposition apparatuses, since the vapor deposition direction is unidirectional, the following method is used.

That is, a feed roll and a take-up roll are placed on both sides of a cylindrical can, and an evaporation source is placed below the can. Then, the ferromagnetic metal is evaporated from the evaporation source toward the surface of the can, and at the same time, the substrate wound on the feeding roll is fed out along the surface of the can, and a vapor deposition layer is formed on one side of the substrate facing the evaporation source. and winding the substrate onto the take-up roll. Then, a method is to set this take-up roll on the feed roll side so that the side of the substrate on which the vapor deposition layer is not formed faces the evaporation source, and then to squeeze out the substrate again and form the vapor deposition layer on the remaining surface. It was getting worse.

[Problem that the invention seeks to solve]

However, with this conventional evaporation equipment, it is necessary to turn the substrate over to perform evaporation on one side, and it takes a considerable amount of time to perform evaporation on each side, resulting in problems in terms of productivity. I was invited. In addition, when the substrate is flexible like a plastic film such as in magnetic recording media, when a vapor deposition layer is formed on one side of the substrate, curling may occur due to the difference in the materials of the substrate and the vapor deposition layer. Although it is a translation.

After that, even if one layer is deposited on the other surface, the curl will not be cured due to the deviation over time, and the curl state will remain and the flatness of the magnetic recording medium will be lost. Because the substrate is curled, the thickness of the deposited layer tends to be non-uniform,5 which adversely affects the recording and reproducing characteristics.

In addition to the above-mentioned vapor deposition methods, simultaneous vapor deposition on both sides using the molecular beam evaporation method has been considered in the past.

In this method, the deposition layer formation speed is at most 3ON/
Since the process time is about seconds, the production speed is slow and the cost is high.

SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor deposition method and a vapor deposition apparatus that eliminate the drawbacks of the prior art as described above, and provide high productivity and inexpensive double-sided vapor deposits.

[Means for solving problems]

In order to achieve the above-mentioned object, the present invention includes an evaporation source and two vapor flow reflectors arranged substantially opposite to each other with a predetermined interval, and the reflective surface of the vapor flow reflector is used as the evaporation source. At the same time, a long substrate is continuously passed between the vapor flow reflectors to reflect or (and ) The evaporated substance is deposited on the east side of the substrate by re-evaporation.

Furthermore, in order to achieve the above-mentioned object, the present invention includes an evaporation source;
two vapor flow reflectors arranged substantially opposite to each other at a predetermined interval, and the reflective surfaces of the reflectors are arranged to face each other at a predetermined interval. a five-layer substrate disposed between the vapor flow reflectors for maintaining the vapor flow at a high temperature near or above the melting point of the source and for reflecting and/or re-vaporizing the vapor flow from the vapor flow reflector; It is characterized in that the evaporation substance is deposited on both sides of the evaporation material at the same time.

〔Example〕

In the present invention, there are various means for maintaining the vapor flow and the reflective surface of the reflector near or above the melting point of the evaporation source, as listed below.

The first method is to make the vapor flow reflector itself from an electrically conductive heating resistor, to generate heat by passing a predetermined current through it, and to maintain the reflective surface at a high temperature.

A second method is to embed a heater near the reflective surface of the vapor flow reflector and maintain the reflective surface of the vapor flow reflector at a high temperature by energizing the heater.

A third method is to provide heating means, such as a tungsten heater, an infrared lamp, or an electron beam generator, in the vicinity of the vapor flow reflector, and to maintain the reflective surface of the vapor flow reflector at a high temperature by the heating means. There is a way.

A fourth method is to generate plasma by applying a high frequency voltage between a pair of vapor flow reflectors, and to maintain the reflective surface at a high temperature by the sputtering action of the plasma on the reflection surface of the vapor flow reflector. be.

A fifth method is to generate plasma by applying a negative DC voltage to a vapor flow reflector with respect to the substrate.

There is a method of maintaining the reflective surface at a high temperature by the sputtering action of the plasma on the reflective surface of the vapor flow reflector.

Further, the reflective surface of the vapor flow reflector can be maintained at a high temperature by appropriately combining these methods.

As the material for the vapor flow reflector of the present invention, a material with a high melting point and good thermal conductivity, such as ceramic, ferrite, metal oxide, or metal, may be used.

A specific example of the ceramic is silicon carbide (dense, thermal conductivity 0.16 Cal・m/crl・sec-'C1
specific heat 0.14 Cal/g・℃, maximum operating temperature in air 1400℃, melting point 2700℃ or higher), forsterite, steatite, zirconia, cordierite, mullite, silicon nitride, titania, sialon, boron nitride, etc. be.

Specific examples of the ferrite include manganese-zinc ferrite, nickel-zinc ferrite, and zinc ferrite, and the thermal conductivity of these ferrites is 0.008.
Ca1-canal ・sec・℃, melting point is about 130
The temperature is 0 to 1400°C.

The metal oxide includes alumina, which has a thermal conductivity of 0.07 Cal/cs/ad/sec/°C, a specific heat of 0.19 Cal/g/°C, and a maximum operating temperature in air of 1750°C. It is ℃.

Other inorganic materials include graphite (thermal conductivity 0.038 Ca1-canal ・sec-"C1
Specific heat 0.167 Cal/g ・”C1 melting point 350
0℃ or higher), amorphous carbon (thermal conductivity 0.085
Ca1-as/all ・sec・℃, specific heat 0.204
Cal/g ・"C, melting point 3500℃ or higher), boron (melting point 2300℃), silicon (thermal conductivity 2.0c)
al-CIl/a1・sec・℃, specific heat 0.183 Ca
l/g ・℃, melting point 1414℃), iron (thermal conductivity 0
．． 2 Ca1-cm/cd・sec・℃, specific heat 0.10 C
al/g ・'C, melting point 1535℃), copper (thermal conductivity (1,96Cal ・cm/ad ・sec・℃, specific heat
0.09 Cal/g・'C, melting point 1085℃)
and so on.

The vapor flow reflector may be made of the aforementioned materials alone or a mixture of these materials.

Alternatively, a high melting point metal plate may be used, and a ceramic layer may be provided on at least the reflective surface side thereof by a method such as thermal spraying.

Next, embodiments of the present invention will be described with reference to the drawings. 1st
The figure is a schematic configuration diagram of a vapor deposition apparatus according to a first embodiment of the present invention. 1 in the figure is a substrate made of a plastic film such as polyimide resin with a thickness of 50 μm, and this vapor deposition apparatus ffl! It is continuously fed out vertically toward the page from a feeding roll (not shown) installed in 8,
It passes between vapor flow reflecting plates 3 and 4, which will be described later, and is wound onto a take-up roll (not shown). In addition, vapor deposition equipment! ! Inside the chamber 8, a reduced pressure state of about 10''1 to lO-'' Torr is maintained by a pressure reducing means (not shown).

Below the substrate 1, an evaporation source 2 consisting of a crucible containing a cobalt-chromium alloy containing 22% by weight of chromium is installed.
The alloy is heated to maintain a molten state. Vapor flow reflection plates 3 are provided diagonally above both sides of this evaporation source 2.
, 4 are provided slightly inclined with respect to the surface of the substrate 1 which is arranged vertically.

This vapor flow reflecting plate 3.4 is made of ceramic carbon, for example, made by press-molding fine carbon powder with a suitable binder (the resistance value can be adjusted depending on the binder and impurities used).
Alternatively, it is made from silicon carbide ceramic (a mixture of silicon carbide powder and carbon powder mixed with pitch or tar, which is then pressure molded and then heated at high temperature to silicify).

Direct current or alternating current heating devices 16 are connected to both ends of the vapor flow reflector 3.4. By energizing this vapor flow reflecting plate 3.4, the surface temperature is maintained at about 1500° C., which is higher than the melting point of the evaporation source 2.

Reference numeral 9 in FIG. 1 denotes a vapor flow guide member, which is installed between the evaporation source 2 and the reflecting plates 3 and 4, and is heated to approximately the same temperature as the reflecting plates 3 and 4 by a heating means (not shown).

The evaporated metal generated from the evaporation source 2 becomes a vapor flow 7,
The vapor is branched by a guide member 9 and scattered at a predetermined speed in the direction of vapor flow reflecting plates 3 and 4, reaching one reflecting surface. As mentioned above, this reflective surface is heated above the melting point of the vapor-deposited metal, so the flying metal does not stick to the reflective surface, but is reflected by the reflective surfaces of the reflective plates 3 and 4 as shown by the arrows, and the vapor flow 7 reaches both sides of the substrate 1. Since the surface temperature of the substrate 1 is maintained at approximately 150° C. by the temperature control of the evaporation device 8, the metal that reaches the substrate surface is sequentially deposited and forms cobalt with perpendicular magnetic anisotropy with a thickness of 0.2 μm on both sides. - A magnetic layer 10 made of a chromium alloy is formed (see FIG. 2).The substrate 1 thus has magnetic layers lO simultaneously deposited on both sides.

It passes between the reflecting plates 3 and 4 and is continuously wound up on the aforementioned winding roll.

FIG. 3 is a diagram showing the relationship between the incident angle of evaporated metal atoms with respect to the substrate surface of the magnetic recording medium manufactured in the first embodiment, the degree of crystal orientation of the evaporated metal, and the coercive force. As is clear from this figure, it is a perpendicular magnetic recording medium! Il
In the case of fabrication, it is desirable that the angle of incidence of the evaporated gold shoulder with respect to the substrate surface be controlled within the range of 0 degrees to 20 degrees.

FIG. 2 is an enlarged cross-sectional view of the magnetic @ medium manufactured in this manner.
is formed by vapor deposition.

FIG. 4 is a schematic diagram of a vapor deposition apparatus according to a second embodiment of the present invention. In the case of this embodiment, a heater 11, such as a tungsten heater, is embedded in the vapor flow reflection plate 3.4,
By energizing this heater 11, the vapor flow reflecting plate 3
, 4 are maintained at a desired high temperature. Although a tungsten heater was used in this embodiment, other heaters may be used.

FIG. 5 is a schematic diagram of a vapor deposition apparatus according to a third embodiment of the present invention. In this embodiment, infrared lamps 12 are disposed near both ends of the vapor flow reflecting plates 3 and 4, respectively, facing the reflecting surfaces. The reflective surfaces of the vapor flow reflectors 3, 4 are irradiated by the infrared lamp 12, and the surface temperature of the vapor flow reflectors 3.4 is maintained at a high temperature by such external heating.

FIG. 6 is a block diagram of #1 of a vapor deposition apparatus according to a fourth embodiment of the present invention. In this embodiment, the vapor flow reflectors 3, 4
An electron beam generator 13 is provided below the electron beam generator 113, and an electron beam 14 is generated from the electron beam generator 113.
By colliding uniformly with the reflecting surfaces of the vapor flow reflecting plates 3 and 4, one reflecting surface is maintained at a predetermined high temperature state.

FIG. 7 is a schematic diagram of a vapor deposition apparatus according to a fifth embodiment of the present invention. In this embodiment, a heater 11, such as a tungsten heater, is arranged close to the back surface of the vapor flow reflection plate 3.4, and a heating power source 6 is connected to the heater 11. By energizing the heater 11, the vapor flow reflecting plates 3 and 4 are heated from the outside to maintain the reflecting surfaces at a predetermined high temperature.

FIG. 8 is a schematic diagram of a vapor deposition apparatus according to a sixth embodiment of the present invention. In this embodiment, the vapor flow reflectors 3 and 4 are made of a non-conductive material such as ceramic, and electrodes 15 are adhered to the back surfaces of the plates. Then, a high frequency power source 16 is connected to the electrode 15 between the left and right vapor flow reflectors 3.4.
is connected, a high frequency voltage is applied between the vapor flow reflectors 3 and 4 to generate plasma, and the sputtering action of the plasma heats the reflective surface of the vapor flow reflector 3.4 to a predetermined high temperature state. Hold.

In this embodiment, the sputtering action of the plasma not only has the effect of heating the vapor flow reflector 3.4, but also the reflection of evaporated atoms on the reflective surface of the vapor flow reflector 3.4 and/or the sputtering action itself. Re-evaporation is promoted.

The vapor flow reflectors 3 and 4 are made of a high melting point metal such as tungsten, and a DC voltage of up to 7 KV a degree is applied so that the vapor flow reflectors 3 and 4 have a negative potential with respect to the jf4 temporary 1. It is also possible to generate plasma and maintain the reflective surface of the vapor flow reflector plate 3.4 at a predetermined high temperature state by the sputtering action of the plasma.

FIG. 9 is a schematic diagram of a vapor deposition apparatus according to a seventh embodiment of the present invention. In this embodiment, two evaporation sources 2 are provided corresponding to the vapor flow reflecting plates 3 and 4. Moreover, if the vapor flow reflection plates 3 and 4 are made rotatable, the vapor flow reflection plates 3 and 4 can be rotated.
By setting 1 degree of 4 to yJm, the direction of metal deposition on the surface of the substrate 1 can be controlled.

In this embodiment, the two evaporators g2 and 2 can store different evaporation substances, respectively, so that different substances can be deposited on both sides of the substrate 1, respectively.

Figure 10 shows metallic cobalt (melting point 1494
°C), and the evaporation rate from the evaporation source was set to 1.0xlO [
Results of measuring the vapor deposition rate on the substrate surface when the temperature of the reflecting surface of the vapor flow reflector was varied in d/d seconds*
! - is a characteristic diagram showing.

As is clear from this figure, by maintaining the temperature of the anti-reflective surface of the vapor flow reflector near the melting point of the evaporation source, especially above the melting point, evaporated atoms are actively reflected or re-evaporated on the reflective surface. Therefore, it can be seen that the deposition rate on the substrate is fast and the deposition is performed efficiently.

11 and 12 are diagrams for explaining a magnetic disk cartridge using the magnetic recording medium shown in FIG. 2. FIG. This magnetic disk cartridge includes a magnetic disk 17 punched out of the aforementioned magnetic recording medium into a disk shape, and
It is comprised of a case 18 that rotatably houses it, and a liner 13 that is placed between the magnetic disk 17 and the case 18 as shown in FIG.

A drive shaft insertion hole 20 is formed in the center of the magnetic disk 17 . Furthermore, a chucking hole 21 having a larger diameter than the drive shaft insertion hole 20, a magnetic head insertion port 22, and a sensor hole 23 are provided at predetermined positions in the case 18, respectively.

Although the embodiment described above describes a vapor deposition apparatus and a vapor deposition method used in manufacturing a perpendicular magnetic recording medium, the present invention is not limited thereto.

For example, the present invention can be applied to the production of double-sided conductive sheets or decorative sheets in which a cold layer is formed by vapor deposition on both sides of a substrate such as a plastic film, or double-sided non-reflective sheets in which inorganic substances are vapor-deposited on both sides of the substrate. Can be applied.

Although a film-like substrate was used in the above embodiments, the present invention is not limited thereto, and the present invention can also be applied to cases in which vapor deposition is performed on substrates of other shapes, such as linear or cylindrical shapes.

〔Effect of the invention〕

This is because the present invention has the configuration as described above.

It is possible to increase the deposition rate and efficiently form a deposited layer on both sides of the substrate, increasing production efficiency and reducing costs.In particular, the reflective surface of the vapor flow reflector can be heated to a temperature higher than the melting point of the evaporation source. When the reflective surface of the vapor reflector is heated to a temperature of about 10%, the vapor deposition rate becomes about 10 times faster than when the reflective surface of the vapor reflector is unheated, that is, at room temperature.

Also, the vapor flow reflector Bffl! Depending on the position, the direction of vapor deposition with respect to the substrate surface can be arbitrarily adjusted.

Particularly when the substrate is flexible, such as a film, simultaneous vapor deposition is possible, which prevents deformation of the five substrates such as curl, and provides a high-quality vapor-deposited product.

FIG. 13 is a warpage characteristic diagram in which the horizontal axis represents the thickness of the vapor-deposited film of Go-Cr, and the vertical axis represents the degree of warpage of the obtained measurement sample piece. Curve A in the figure shows the degree of warping when vapor deposition is performed on one side of the base film at a time, and curve B shows the degree of warpage when vapor deposition is performed on both sides of the base film at the same time as in the above embodiment.

That is, this test was carried out using a base fill of 50 t.
A polyamide film with a thickness of t m was used and heated at 150°C.
0.1 μm on both sides.

G so that the film thickness is 0.27tm and 0.3μm.
A sample is prepared by depositing o-Cr alloy. Then, cut out a square with a side of 12cm711 from each sample to use as a measurement sample piece, measure the radius of curvature of warpage when this measurement sample piece is placed on a flat surface, and calculate the reciprocal of the radius of curvature as the degree of warpage. did.

As is clear from this figure, when vapor deposition is performed on one side at a time (curve mA), warpage is particularly noticeable when the thickness of the vapor-deposited film becomes thick. On the other hand, when simultaneous vapor deposition is performed on both sides as in the present invention (track #B).

Warpage can be reduced to about 1/2 or more compared to the former, and in particular, even if the thickness of the deposited film is increased, the degree of warpage is not so large.

[Brief explanation of drawings]

1 (!I) is a schematic diagram of a vapor deposition apparatus according to the first practical example of the present invention, FIG. 2 is an enlarged cross-sectional view of a magnetic recording medium obtained by the vapor deposition apparatus, and FIG. Characteristic diagram showing the relationship between the incident angle of atoms, degree of crystal orientation, and coercive force, No. 4
Figures 5, 6, and 7. FIG. 8 and FIG. 9 show steam 1 according to other embodiments of the present invention. FIG. 10 is a schematic configuration diagram of the apparatus, and a characteristic diagram showing the relationship between the heating temperature of the vapor flow reflection plate and the deposition rate. 11 and 12 are a plan view and a sectional view of a magnetic disk cartridge using the magnetic recording medium, and FIG. 13 is a warpage characteristic diagram of each measurement sample f'F. 1...Substrate, 2...Evaporation source, 3.4.
...Evaporative flow reflector, 6...Heating power supply,
7・・・・・・・・・Steam flow. 11・・・・・・・・・Heater, 12・・・・・・・・・
・Infrared lamp. 13......Electron beam generator, 14...
・・・・・・Electron beam, 16・・・・・・High frequency power supply. %22L- Fig. 1 Fig. 2 n Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7 Fig. 8 Fig. 9 Fig. 10 Steam; light reflector [l heat] Yo degrees (0C) Figure 13 Co-Cr film thickness (μm)

Claims (18)

[Claims] (1) comprising an evaporation source and one or more pairs of vapor flow reflectors arranged substantially opposite each other at a predetermined interval, and maintaining the reflective surfaces of the vapor flow reflectors at a high temperature;
A long substrate is continuously passed between the vapor flow reflectors, and the vapor flow from the evaporation source is reflected by the vapor flow reflector to simultaneously deposit the evaporation substance on both sides of the substrate. vapor deposition method. (2) In claim (1), the vapor flow reflector is made of a conductive heating resistor, and when the vapor flow reflector is energized, the reflective surface of the vapor flow reflector is brought into a high temperature state. A vapor deposition method characterized in that the temperature is maintained at . (3) In claim (1), a heater is embedded in the vapor flow reflector, and the reflective surface of the vapor flow reflector is maintained at a high temperature by energizing the heater. A vapor deposition method characterized by: (4) Claim (1), characterized in that a heating means is provided near the vapor flow reflector, and the reflective surface of the vapor flow reflector is maintained at a high temperature by the heating means. vapor deposition method. (5) In claim (1), a high-frequency voltage is applied between the pair of vapor flow reflectors to generate plasma, and the sputtering action of the plasma on the reflective surface of the vapor flow reflector causes A vapor deposition method characterized in that the reflective surface is maintained at a high temperature. (6) In claim (1), a negative DC voltage is applied to a vapor flow reflector with respect to the substrate to generate plasma, and the plasma is generated on the reflection surface of the vapor flow reflector. A vapor deposition method characterized by a reflective surface being maintained at a high temperature by sputtering. (7) The vapor deposition method according to claim (1), wherein the reflective surface of the vapor flow reflector is maintained at a high temperature higher than the melting point of the evaporation source. (8) comprising an evaporation source and one or more pairs of vapor flow reflectors arranged substantially opposite each other at a predetermined interval, and maintaining the reflective surfaces of the vapor flow reflectors at a high temperature;
reflecting the vapor flow from the evaporation source with a vapor flow reflector;
A vapor deposition apparatus configured to simultaneously deposit an evaporative substance onto both sides of a substrate disposed between vapor flow reflectors. (9) In claim (8), the vapor flow reflector is made of an electrically conductive heating resistor, and when the vapor flow reflector is energized, the reflective surface of the vapor flow reflector is brought into a high temperature state. A vapor deposition apparatus characterized in that the vapor deposition apparatus is maintained at (10) In claim (8), a heater is embedded in the vapor flow reflector, and the reflective surface of the vapor flow reflector is maintained at a high temperature by energizing the heater. A vapor deposition device featuring: (11) Claim (8), characterized in that a heating means is provided near the vapor flow reflector, and the reflective surface of the vapor flow reflector is maintained at a high temperature by the heating means. Vapor deposition equipment. (12) In claim (8), a high frequency voltage applying means for applying a high frequency voltage between the opposing vapor flow reflectors is provided, and the high frequency voltage is applied between the vapor flow reflectors. A vapor deposition apparatus characterized in that plasma is generated by the plasma, and the reflective surface of the vapor flow reflector is maintained at a high temperature by the sputtering action of the plasma on the reflective surface of the vapor flow reflector. (13) In claim (8), a DC voltage applying means for applying a negative DC voltage to the vapor flow reflector is provided to the base, and the negative DC voltage is applied to the vapor flow reflector. 1. A vapor deposition apparatus characterized in that a plasma is generated by applying an electric current to the vapor flow reflector, and the reflecting surface of the vapor flow reflector is maintained at a high temperature by sputtering action of the plasma on the reflecting surface of the vapor flow reflector. (14) The vapor deposition apparatus according to claim (8), wherein the reflective surface of the vapor flow reflector is maintained at a high temperature higher than the melting point of the evaporation source. (15) In claim (8), one evaporation source is installed, vapor flow branching means is provided between the evaporation source and the opposing vapor flow reflector, and the substrate A vapor deposition device characterized in that the same substance is vapor deposited on both sides of the vapor deposition device. (16) A vapor deposition apparatus according to claim (8), characterized in that two or more evaporation sources are installed, and a vapor flow reflector is provided corresponding to each evaporation source. (17) The vapor deposition according to claim (8), wherein the two vapor sources use different evaporation substances, and the vapor deposition is configured such that the different substances are vapor-deposited on both surfaces of the substrate. Device. (18) A vapor deposition apparatus according to claim (8), characterized in that the vapor flow reflector is rotated to adjust the direction of vapor deposition relative to the surface of the substrate.