JPS6213617B2 - - Google Patents

Info

Publication number
JPS6213617B2
JPS6213617B2 JP54126629A JP12662979A JPS6213617B2 JP S6213617 B2 JPS6213617 B2 JP S6213617B2 JP 54126629 A JP54126629 A JP 54126629A JP 12662979 A JP12662979 A JP 12662979A JP S6213617 B2 JPS6213617 B2 JP S6213617B2
Authority
JP
Japan
Prior art keywords
chip
inspected
light
throw
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54126629A
Other languages
Japanese (ja)
Other versions
JPS5648544A (en
Inventor
Yoshinobu Kashiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP12662979A priority Critical patent/JPS5648544A/en
Publication of JPS5648544A publication Critical patent/JPS5648544A/en
Publication of JPS6213617B2 publication Critical patent/JPS6213617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination

Description

【発明の詳細な説明】 この発明は特にスローアウエチツプの欠け検出
装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention particularly relates to a chipping detection device for a throw-away chip.

スローアウエチツプの切刃に欠けがあることは
刃具として問題であり、欠けのある不良品の検出
は従来目視によつて行われていた。
Chips on the cutting edge of a throw-away chip are a problem as a cutting tool, and defective products with chips have conventionally been detected by visual inspection.

この目視による欠け検出に代わつて、自動的に
検出する技術が提供されているが、種々の形状を
有するスローアウエチツプに適用するには光の反
射形態が異なるチツプの直線部とコーナR部のい
ずれにおいても高検出精度を確保することが必要
である。
As an alternative to this visual chip detection, automatic detection technology has been provided, but in order to apply it to throw-away chips with various shapes, it is difficult to apply it to throw-away chips with various shapes. In either case, it is necessary to ensure high detection accuracy.

この発明の目的は極めて簡素な構成で、適確に
スローアウエチツプに限らずこの種の形状物端部
の欠けの有無を検出出来る装置を提供することに
ある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a device which has an extremely simple configuration and can accurately detect the presence or absence of chipping not only in throw-away chips but also in the ends of this type of shaped articles.

以下に、添付図面に基づいてこの発明を詳述す
る。第1図及び第2図は反射光の量から欠けを検
出する装置の基本原理を示している。
The present invention will be explained in detail below based on the accompanying drawings. 1 and 2 show the basic principle of an apparatus for detecting chips from the amount of reflected light.

1はスローアウエチツプで、その側面に水平方
向から光2が投射されている。3はレンズ系で、
投光された光2の反射光がスローアウエチツプ1
の辺上部に設けた細幅短冊状の光電変換素子4に
結像されるよう配備されている。5は光電変換素
子4の出力の増幅回路である。
1 is a throw-away chip, and light 2 is projected onto the side of the chip from the horizontal direction. 3 is the lens system,
The reflected light of the projected light 2 is reflected from the throw-away chip 1.
It is arranged so that the image is formed on a narrow strip-shaped photoelectric conversion element 4 provided on the upper side of the . 5 is an amplification circuit for the output of the photoelectric conversion element 4.

スローアウエチツプ1を投光された光2とチツ
プ辺との角度(第1図の場合90度)を保持しつ
つ、矢符A方向に移動させることにより、スロー
アウエチツプ1の端部の全てが光電変換素子4に
結像されることになる。ここでもし、端部に欠け
が生じると反射光2aは乱反射を起こし、光電変
換素子4の出力に変化が生じる。このようにして
スローアウエチツプ1の端部の欠けを検出するこ
とが出来る。
By moving the throw-out chip 1 in the direction of arrow A while maintaining the angle between the projected light 2 and the chip side (90 degrees in the case of Fig. 1), all of the ends of the throw-out chip 1 are will be imaged on the photoelectric conversion element 4. Here, if a chip occurs at the end, the reflected light 2a causes diffuse reflection, causing a change in the output of the photoelectric conversion element 4. In this way, chipping at the end of the throw-away chip 1 can be detected.

一般的な欠け検出装置は、第1図及び第2図に
示すように、チツプ1の側面に直角に光を当てゝ
いるが(例えば、特公昭50―36189号等を参照)、
種々の実験の結果、投光器からの被検査物である
スローアウエチツプ1との投光角度か第3図bに
示す如く、約50〜80度角度をもつて行なうことが
欠け信号特性として優れていることが判明した。
A general chipping detection device, as shown in Figs. 1 and 2, shines light at right angles to the side surface of the chip 1 (see, for example, Japanese Patent Publication No. 36189/1989).
As a result of various experiments, it has been found that the projection angle between the projector and the throw-away chip 1, which is the object to be inspected, is approximately 50 to 80 degrees, as shown in Fig. 3b, for better chipping signal characteristics. It turned out that there was.

第4図にS/N比を縦軸に、投光角度を横軸に
してその欠け信号特性(S/N比)の相関を示し
たが明らかのように50度近辺から80度程度がS/
N比で2以上を示している。
Figure 4 shows the correlation between the missing signal characteristics (S/N ratio) with the S/N ratio on the vertical axis and the projection angle on the horizontal axis. /
The N ratio is 2 or more.

次に光電変換素子4はシリコン単結晶による受
光素子を細幅短冊状に形成したものが用いられ
る。この光電変換素子4は、反射光の乱反射を受
光する意味においても、スローアウエチツプ1の
辺と直交する角度が常識的であるが、第5図aに
示す如く、スローアウエチツプ1の隅角に相当す
るR部ではスローアウエチツプ1を移動したとき
不都合な角度を呈する。そこで、予め光電変換素
子4を辺と45度になるような角度で配備しておけ
ば、R部においてもR部分と直角状に配備される
ので反射光の適確な把握が可能となる、又、辺部
において45度を呈している場合はさほど受光上差
しつかえが生じるようなことはない。
Next, as the photoelectric conversion element 4, a light-receiving element made of silicon single crystal formed into a narrow rectangular shape is used. In the sense that this photoelectric conversion element 4 receives diffused reflection of reflected light, it is common sense that the angle is perpendicular to the side of the throw-away chip 1, but as shown in FIG. In the R portion corresponding to , an unfavorable angle is formed when the thrower tip 1 is moved. Therefore, if the photoelectric conversion element 4 is placed in advance at an angle of 45 degrees with the side, it will be placed at right angles to the R part, making it possible to accurately grasp the reflected light. Furthermore, if the angle is 45 degrees at the side, there will not be much of a problem in receiving light.

そこで、この発明においては、スローアウエチ
ツプ1個に対し、上部に辺45度の角度を有する2
個の光電変換素子4a,4bを設けそれぞれに投
光角度の異なる光2′,2″をスローアウエチツプ
側面に投射し、それぞれの反射光を受光するよう
にしたのである。
Therefore, in this invention, for one throw-a-chip, there are two
The photoelectric conversion elements 4a and 4b are provided to respectively project light 2' and 2'' at different projection angles onto the side surface of the throw-away chip, and to receive the respective reflected lights.

それぞれの光電変換素子4a,4bは各別に信
号処理回路又は増幅回路5a,5bに電気的に接
続されており、スローアウエチツプ1を2つの矢
符方向に交互に移動させることにより、欠けの有
無を迅速且つ適確に検出することが出来る。
Each of the photoelectric conversion elements 4a and 4b is electrically connected to a signal processing circuit or an amplification circuit 5a and 5b, respectively, and by alternately moving the throw-out chip 1 in the two arrow directions, the presence or absence of chipping can be determined. can be detected quickly and accurately.

以上の如く、この発明は、スローアウエチツプ
の側面から欠け信号が良好に得られるような辺へ
の投光角度(好ましくは50〜80度)で2方向から
投光を行ない、辺上部に辺と45度の角度をなす細
幅短冊状の光電変換素子を2個設けたため、欠け
の検出がより適確に行い得て且つ精度の高い欠け
検査が可能となるものである。
As described above, the present invention projects light from two directions at an angle (preferably 50 to 80 degrees) at which a good chipping signal can be obtained from the side surface of the throw-away chip, and Since two photoelectric conversion elements are provided in the form of narrow strips that form an angle of 45 degrees with the wafer, chipping can be detected more accurately and chipping inspection can be performed with high accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の装置の基本原理を示す図、
第2図a,bは第1図の説明のための側面図及び
平面図、第3図a,bは第2図a,bに相当する
改良された側面図及び平面図、第4図は投光角度
と欠け信号特性(S/N比)との対比図、第5図
a,b図は光電変換素子の配置角度の違いを表わ
す平面図、第6図はこの発明の装置の概略構成を
示す平面図である。 1……スローアウエチツプ、2……光、3……
レンズ系、4……光電変換素子。
FIG. 1 is a diagram showing the basic principle of the device of this invention;
Figures 2a and b are side views and plan views for explaining Figure 1, Figures 3a and b are improved side views and plan views corresponding to Figures 2a and b, and Figure 4 is an illustrative side view and plan view. A comparison diagram of the projection angle and missing signal characteristics (S/N ratio), Figures 5a and b are plan views showing the difference in the arrangement angle of the photoelectric conversion element, and Figure 6 is a schematic configuration of the device of the present invention. FIG. 1... Throw-away chip, 2... Light, 3...
Lens system, 4...Photoelectric conversion element.

Claims (1)

【特許請求の範囲】[Claims] 1 スローアウエイチツプ等の被検査物に側方か
ら投射した光の反射光を被検査物の端部上方に配
した細巾の短冊状光電変換素子で受け、この素子
の出力変化から素子に結像した被検査物端部の欠
けの有無を判別する欠け検出装置において、被検
査物側面への投光を互いに異なる2方向から行な
うと共に、2つの投光に対する各反射光の受光位
置に上記光電変換素子を各々1個ずつ配し、か
つ、その2個の素子は被検査物の端部辺に対し約
45゜の角度をつけて配設し、被検査物を所定の投
光方向角度を保ちながら水平移動させて上記2個
の光電変換素子で欠けの検出を行なうようにした
ことを特徴とする欠け検出装置。
1 The reflected light of light projected from the side onto an object to be inspected, such as a throw-away chip, is received by a narrow strip-shaped photoelectric conversion element placed above the edge of the object to be inspected, and a signal is generated from the output change of this element to the element. In a chip detection device that determines whether or not there is a chip at the edge of an imaged object to be inspected, light is projected onto the side surface of the object to be inspected from two different directions, and the photoelectric sensor is placed at the receiving position of each reflected light for the two light projections. One conversion element is arranged for each, and the two elements are located approximately at a distance from the end side of the object to be inspected.
The chip is arranged at an angle of 45 degrees, and the chip is detected by the two photoelectric conversion elements by horizontally moving the object to be inspected while maintaining a predetermined light projection direction angle. Detection device.
JP12662979A 1979-09-28 1979-09-28 Crack detector Granted JPS5648544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12662979A JPS5648544A (en) 1979-09-28 1979-09-28 Crack detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12662979A JPS5648544A (en) 1979-09-28 1979-09-28 Crack detector

Publications (2)

Publication Number Publication Date
JPS5648544A JPS5648544A (en) 1981-05-01
JPS6213617B2 true JPS6213617B2 (en) 1987-03-27

Family

ID=14939917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12662979A Granted JPS5648544A (en) 1979-09-28 1979-09-28 Crack detector

Country Status (1)

Country Link
JP (1) JPS5648544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047892B2 (en) * 1986-06-06 1992-02-13 Sekisui Chemical Co Ltd
JPH0436899Y2 (en) * 1987-12-28 1992-08-31

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157735A (en) * 1988-09-09 1992-10-20 Hitachi, Ltd. Chipping detection system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036189A (en) * 1973-07-31 1975-04-05
JPS5149779A (en) * 1974-10-28 1976-04-30 Canon Kk BUTSUTAIRYOBUKETSUKANKENSAHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036189A (en) * 1973-07-31 1975-04-05
JPS5149779A (en) * 1974-10-28 1976-04-30 Canon Kk BUTSUTAIRYOBUKETSUKANKENSAHOHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047892B2 (en) * 1986-06-06 1992-02-13 Sekisui Chemical Co Ltd
JPH0436899Y2 (en) * 1987-12-28 1992-08-31

Also Published As

Publication number Publication date
JPS5648544A (en) 1981-05-01

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