JPS62136040A - Stage for semiconductor wafer prober - Google Patents

Abstract

PURPOSE:To enable characteristics of pressure sensitivity to be measured, by providing a mechanism, in which cavities are vacuum-sucked from outside, holes which communicate with the cavities and are opened corresponding to each chip on measured-semiconductor wafer mounted on a stage plane in the unit, and mechanism in which temperature on the stage surface is controlled. CONSTITUTION:A diaphragm part 3, in which a circuit and diaphragms are formed on a silicon wafer 2, is positioned against passing holes which are arrange on a stage 1a and corresponding to the diaphragm part 3. Pressure is applied to the surface of the diaphragm part 3 by operating a vacuum source so as to vacuum-suck the back surface of the diaphragm 3 from a suction port 6. On the other hand, temperature control of the stage surface 1a is performed by supplying electricity to a heater 9 or sending a medium to a cooling tube 10. Hence, characteristics of pressure sensitivity in a semiconductor pressure sensor in a wafer state can be measured.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a stage for a semiconductor wafer prober that measures the characteristics of each chip formed on a semiconductor wafer, and particularly to a pressure sensor for a semiconductor pressure sensor. The present invention relates to a stage for a semiconductor wafer plow i4- used for measuring sensitivity characteristics.

[Conventional technology]

In the case of semiconductor pressure sensors, when measuring the pressure sensitivity characteristics of each chip formed on a silicon wafer, conventionally each chip was separated from the silicon wafer, and the chips were assembled into a stem and then measured. FIG. 2 is a cross-sectional view showing a structure when measuring the pressure sensitivity characteristics of each chip using a conventional method. That is, the chip 21t separated from the silicon wafer is hermetically bonded to a hole glass 22 which is used for the purpose of alleviating thermal stress and has a hole for introducing pressure, and is hermetically bonded to a hole stem 23 using an adhesive 24. Next, connect Au from the chip 21 to the external terminal 25 of the holed stem 23.
Bonding is performed using a wire or A-wire 26. Next, the carrier with the hoard 27 is hermetically sealed to the perforated stem 23. Finally, pressure was applied through port 28 and pressure sensitivity characteristics were measured. Furthermore, the temperature characteristics of pressure sensitivity were measured by setting the product in a constant temperature bath and adjusting the temperature.

[Problem that the invention seeks to solve]

However, in the measurement of pressure sensitivity characteristics using the conventional technology described above, the chip 21 is separated from the silicon wafer, assembled on the holed stem 23, and then pressure is applied and measured. It took a long time to measure the sensitivity characteristics and also required troublesome steps. Furthermore, there was a drawback that chips with poor characteristics were also assembled. Moreover, since the temperature characteristics of pressure sensitivity are measured by placing the products in a constant cypress wood, there is a drawback in that a constant temperature bath equipped with a mechanism for applying pressure to each product is required.

An object of the present invention is to provide a stage for a semiconductor wafer prober that measures the pressure sensitivity characteristics of a semiconductor pressure sensor in a wafer state.

[Means for solving problems]

The present invention provides a stage body for a semiconductor wafer prober which has a hollow interior, and includes a mechanism for vacuum suctioning the cavity from the outside, and a mechanism that communicates with the cavity and connects each chip on the semiconductor wafer to be measured mounted on the stage surface of the body. A stage for a semiconductor wafer prober is characterized in that it includes holes opened in correspondence with each other and a temperature control mechanism that controls the temperature on the stage surface.

[For production]

The stage for a semiconductor wafer prober of the present invention aligns each chip formed on a semiconductor wafer with a through hole on the stage, and evacuates the cavity inside the stage for a semiconductor wafer prober, so that the back side of each chip is The pressure sensitivity characteristics of the semiconductor pressure sensor are measured by utilizing the fact that pressure is applied to the surface of each chip as the side is in a vacuum. Furthermore, by providing a temperature adjustment mechanism, the temperature on the stage can be changed and the temperature characteristics of pressure sensitivity can also be measured.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a structural sectional view of a stage for a semiconductor wafer prober showing an embodiment of the present invention. The stage main body 1 has a stage surface 1a on which a silicon wafer 2 is mounted, and inside the main body 1 there is a cavity 5 communicating with a through hole 4 opened in the stage surface 1a, and a cavity 5 for controlling the temperature of the stage surface. It has a heater 9 and a cooling pipe 10. 6 is '1
1 is a suction port that connects the cavity 5 to a vacuum source (path shown).

In the embodiment, for example, when measuring the pressure sensitivity characteristics of a semiconductor pressure sensor, the diaphragm part 3 of the silicon wafer 2 on which the circuit and diaphragm are formed is inserted into a through hole on the stage surface la arranged in correspondence with the diaphragm part 3. Align to 4.

Next, the vacuum source is driven to vacuum the back surface of the diaphragm section 3 through the suction port 6. As a result, the diaphragm portion 3
Pressure will be applied to the surface.

On the other hand, when the heater 9 is energized, the temperature of the stage surface 1a is adjusted by feeding a medium into the cooling pipe 1o, and the pressure sensitivity characteristics of the semiconductor pressure sensor are determined.

〔Effect of the invention〕

As described above, according to the present invention, the pressure sensitivity characteristics of a semiconductor pressure sensor can be measured in a wafer state without separating semiconductor wafers into chips and assembling them into a stem. It is possible to shorten the period from completion of circuit formation and diaphragm formation on a trenched silicon wafer to measurement of pressure sensitivity characteristics, and it is also effective in detecting chips with poor characteristics at a single wafer stage. Furthermore, by flowing the cooling medium into the heated cooling tube of the heater, the temperature of the stage surface can be changed and the temperature characteristics of the pressure sensitivity of the semiconductor pressure sensor can also be measured without using a constant temperature bath. It is something.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of the structure of a stage for a semiconductor wafer prober according to the present invention, and FIG. 2 is a cross-sectional view of the structure when measuring the pressure sensitivity characteristics of each chip using a conventional method. In the figure, 1 is the stage body for semiconductor wafer prober, la is the stage surface, 2 is the silicon wafer,
3 is a diaphragm part, 4 is a through hole, 5 is a cavity, 6 is a suction port, 9 heaters, and 10 is a cooling pipe. District 1, Figure 2

Claims (1)

[Claims] (1) In a stage body for a semiconductor wafer prober having a hollow interior, a mechanism for vacuum suctioning the cavity from the outside, and a mechanism communicating with the cavity and each chip on the semiconductor wafer to be measured mounted on the stage surface of the body. A stage for a semiconductor wafer prober, comprising holes opened in correspondence with each other and a temperature control mechanism for controlling the temperature on the stage surface.