JPS62296532A - Stage for semiconductor wafer prober - Google Patents

Stage for semiconductor wafer prober

Info

Publication number
JPS62296532A
JPS62296532A JP14093486A JP14093486A JPS62296532A JP S62296532 A JPS62296532 A JP S62296532A JP 14093486 A JP14093486 A JP 14093486A JP 14093486 A JP14093486 A JP 14093486A JP S62296532 A JPS62296532 A JP S62296532A
Authority
JP
Japan
Prior art keywords
stage
diaphragm
semiconductor
pressure
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14093486A
Other languages
Japanese (ja)
Inventor
Masahiro Suda
須田 政弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP14093486A priority Critical patent/JPS62296532A/en
Publication of JPS62296532A publication Critical patent/JPS62296532A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To easily measure the pressure sensitivity characteristic of a semiconductor pressure sensor by positioning chips formed on a semiconductor wafer at the suction holes on a stage using marks, and evacuating in a vacuum the cavity in the stage for a semiconductor wafer prober. CONSTITUTION:When measuring, for example, the pressure sensitivity of a semiconductor pressure sensor, a silicon wafer 2 formed with a circuit and a diaphragm 3 is placed on a stage surface 1a. A circuit formed on the wafer 2 is positioned at marks 7 to position the diaphragm 3 at holes 4 on the state placed corresponding to the diaphragm 3. Then, the rear surface of the diaphragm 3 is evacuated in a vacuum from an inserting port 6 through the cavity 5 to apply a pressure to the surface of the diaphragm 5. Thus, the pressure sensitivity characteristic of the sensor can be readily measured.

Description

【発明の詳細な説明】 3、発明の詳細な説明 [産業上の利用分野] 本発明は半導体つ■バー上に形成された各チップの特性
を測定する半導体ウェハープローバー用ステージ、特に
半導体圧力センサの圧力感度の特性測定に用いる半導体
ウェハープローバー用ステージに関する。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a stage for a semiconductor wafer prober that measures the characteristics of each chip formed on a semiconductor strip, and in particular to a semiconductor pressure sensor. The present invention relates to a stage for a semiconductor wafer prober used to measure the pressure sensitivity characteristics of a semiconductor wafer prober.

[従来の技術] 半導体圧力センサの場合、シリコンウェハー上に形成さ
れた各チップの圧力感度特性を測定する必要があり、従
来台チップの圧力感度特性を測定するにはシリコンウェ
ハーから各チップに分離し、ステムに組立ててから測定
していた。第3図は従来の方法を示すもので、各チップ
の圧力感度特性を測定する場合の構造を示す断面図であ
る。その測定要領は次のとおりである。すなわち、シリ
コンウェハーから分離されたチップ31を圧力導入用の
穴開けをした熱ストレス緩和の目的で使用する穴開きガ
ラス32に気密接合させ、穴開きステム33に接着剤3
4を用いて気密接着する。次に穴開きステム33の外部
端子35にチップ31からAu線あるいはM線36を用
いてポンディングする。次にポート付キャップ37を穴
開きステム33に気密封止する。最後にボート38より
圧力を加えて圧力感度特性を測定していた。
[Conventional technology] In the case of semiconductor pressure sensors, it is necessary to measure the pressure sensitivity characteristics of each chip formed on a silicon wafer, and in order to measure the pressure sensitivity characteristics of conventional chips, it is necessary to separate each chip from the silicon wafer. However, after assembling it into the stem, measurements were taken. FIG. 3 shows a conventional method, and is a sectional view showing a structure for measuring the pressure sensitivity characteristics of each chip. The measurement procedure is as follows. That is, a chip 31 separated from a silicon wafer is hermetically bonded to a perforated glass 32 that is used for the purpose of relieving thermal stress and has a hole for introducing pressure, and an adhesive 3 is attached to a perforated stem 33.
4 to make an airtight seal. Next, the external terminal 35 of the holed stem 33 is bonded from the chip 31 using an Au wire or an M wire 36 . Next, the ported cap 37 is hermetically sealed to the perforated stem 33. Finally, pressure was applied from the boat 38 and pressure sensitivity characteristics were measured.

[発明が解決しようとする問題点J 上述した従来の技術での圧力感度特性の測定ではシリコ
ンウェハーからチップ31を分離し、穴開きステム33
に組立ててから圧力を加えて測定しているので、ウェハ
ー・プロセスが完了してから圧力感度特性を測定するま
での作業に厄介な手数と長時間とを要していた。ざらに
は特性の悪いチップも組立ててしまうという欠点があっ
た。
[Problem to be solved by the invention J] In the measurement of pressure sensitivity characteristics using the above-mentioned conventional technique, the chip 31 is separated from the silicon wafer, and the holed stem 33 is separated from the silicon wafer.
Since pressure is applied and measured after the wafer is assembled, the process from the completion of the wafer process to the measurement of pressure sensitivity characteristics requires a lot of troublesome work and a long time. Zara had the drawback of assembling chips with poor characteristics.

本発明の目的はつ■バー状態で半導体圧力センサの圧力
測定を行く【う半導体つlバープローバー用ステージを
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a stage for a hollow semiconductor two-bar prober that measures the pressure of a semiconductor pressure sensor in a two-bar state.

[問題点を解決するための手段] 本発明はつ■バープローバー用ステージ本体内に形成さ
れた空洞を外部から真空吸引する機構と、ステージ本体
のステージ面に搭載される被測定半導体つ■バー上の各
チップに相対応して開口され、前記空洞に連通ずる吸引
孔と、前記ステージ本体のステージ面に設りた被測定半
導体ウェハー上の各チップと吸引孔との位置合わせ用目
印とを有することを特徴とする半導体ウェハープローバ
ー用ステージである。
[Means for Solving the Problems] The present invention includes a mechanism for vacuuming a cavity formed in a bar prober stage body from the outside, and a semiconductor bar to be measured mounted on the stage surface of the stage body. A suction hole is opened correspondingly to each chip on the top and communicates with the cavity, and a mark is provided on the stage surface of the stage body for positioning each chip on the semiconductor wafer to be measured and the suction hole. A stage for a semiconductor wafer prober, characterized in that it has the following features:

[作 用] 本発明の半導体ウェハープローバー用ステージは半導体
ウェハー上に形成された各チップをステージ上の吸引孔
に目印を用いて位置合わせし、前記半導体ウェハープロ
ーバー用ステージ内部の空洞内を真空吸引することによ
り、各チップの裏面側に負圧を生じさせ、各チップの表
面に圧力が加わった状態になったことを利用して半導体
圧力センサの圧力感度特性を測定するものである。
[Function] The stage for a semiconductor wafer prober of the present invention aligns each chip formed on a semiconductor wafer with a suction hole on the stage using a mark, and vacuums the inside of the cavity inside the stage for a semiconductor wafer prober. By doing so, a negative pressure is generated on the back side of each chip, and the pressure sensitivity characteristics of the semiconductor pressure sensor are measured using the state in which pressure is applied to the front surface of each chip.

[実施例] 以下に本発明の実施例を図によって説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例を示すウェハープローバー用
ステージの断面図である。図において、ウェハープロー
バー用ステージ本体1はその内部に空洞5を形成し、そ
の表面にシリコンウェハー2を搭載するステージ面1a
を有している。ステージ面1aには前記空洞5に連通し
、且つシリコンウェハー2のダイアフラム部3に対応し
て開口された複数の吸引孔4を備えている。空洞5は配
管差込口6を介して真空源8に接続する。
FIG. 1 is a sectional view of a stage for a wafer prober showing an embodiment of the present invention. In the figure, a stage body 1 for a wafer prober has a cavity 5 formed therein, and a stage surface 1a on which a silicon wafer 2 is mounted.
have. The stage surface 1a is provided with a plurality of suction holes 4 communicating with the cavity 5 and opening corresponding to the diaphragm portion 3 of the silicon wafer 2. The cavity 5 is connected to a vacuum source 8 via a pipe entry 6 .

第2図は第1図に示したステージ面1aの平面図である
。図において、7は前記ダイアフラム部3と吸引孔4と
の位置合わせ用目印である。
FIG. 2 is a plan view of the stage surface 1a shown in FIG. 1. In the figure, 7 is a mark for positioning the diaphragm portion 3 and the suction hole 4.

実施例において、例えば半導体圧力センサの圧力感度を
測定する場合、回路及びダイアフラム3を形成したシリ
コンウェハー2をステージ面1aに搭載し、シリ」ンウ
■バー2上に形成された回路と目印7とを位置合わUす
ることにより、そのダイアフラム部3をダイアフラム部
3と相対応して配置されたステージ上の吸引孔4に位置
合わせする。次に空洞5を通してダイアプラム部3の裏
面を差込口6から真空吸引することにより、ダイアフラ
ム部3の表面に圧力が加わることになるので、半導体圧
力センサの圧力感度特性を容易に測定できる。但し、こ
こで示した目印7はあくまで一実施例であり、ダイアフ
ラム部3と吸引孔4とが位置合わせできればよく、これ
に限定されるものではない。
In the embodiment, for example, when measuring the pressure sensitivity of a semiconductor pressure sensor, the silicon wafer 2 on which the circuit and diaphragm 3 are formed is mounted on the stage surface 1a, and the circuit formed on the silicon bar 2 and the mark 7 are placed on the stage surface 1a. By positioning U, the diaphragm part 3 is aligned with the suction hole 4 on the stage, which is arranged to correspond to the diaphragm part 3. Next, by vacuum suctioning the back surface of the diaphragm section 3 through the cavity 5 through the insertion port 6, pressure is applied to the surface of the diaphragm section 3, so that the pressure sensitivity characteristics of the semiconductor pressure sensor can be easily measured. However, the mark 7 shown here is just one example, and it is sufficient that the diaphragm part 3 and the suction hole 4 can be aligned, and the present invention is not limited to this.

[発明の効果1 以上述べたように本発明によれば、半導体ウェハーをチ
ップ分離してステムに組立てすることなく、つIバー状
態で半導体圧力センサの圧力感度特性が測定できる。ま
た、半導体つ■バー裏面のダイアフラム部とステージ面
上の吸引孔との位置合わせが容易にできる。さらに、シ
リコンウェハーの回路形成及びダイアフラム形成が完了
してから圧力感度特性を測定するまでの時間が短縮でき
、手数が簡略化され、また特性の悪いチップをウェハ一
段階で発見できる効果がある。
[Advantageous Effects of the Invention 1] As described above, according to the present invention, the pressure sensitivity characteristics of a semiconductor pressure sensor can be measured in an I-bar state without separating semiconductor wafers into chips and assembling them into a stem. Further, the diaphragm portion on the back surface of the semiconductor tube and the suction hole on the stage surface can be easily aligned. Furthermore, the time required from completion of circuit formation and diaphragm formation on the silicon wafer to measurement of pressure sensitivity characteristics can be shortened, the number of steps can be simplified, and chips with poor characteristics can be detected in one wafer stage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体ウェハープローバー用ステージ
の構造断面図、第2図はステージ面の平面図、第3図は
従来の方法で各チップの圧力感度特性を測定する時の構
造断面図である。
Fig. 1 is a cross-sectional view of the structure of the stage for a semiconductor wafer prober of the present invention, Fig. 2 is a plan view of the stage surface, and Fig. 3 is a cross-sectional view of the structure when measuring the pressure sensitivity characteristics of each chip using the conventional method. be.

Claims (1)

【特許請求の範囲】[Claims] (1)ウェハープローバー用ステージ本体内に形成され
た空洞を外部から真空吸引する機構と、ステージ本体の
ステージ面に搭載される被測定半導体ウェハー上の各チ
ップに対応して開口され、前記空洞に連通する吸引孔と
、前記本体のステージ面に設けた被測定半導体ウェハー
上の各チップと吸引孔との位置合わせ用目印とを有する
ことを特徴とする半導体ウェハープローバー用ステージ
(1) A mechanism that vacuums a cavity formed inside the stage body for a wafer prober from the outside, and an opening corresponding to each chip on the semiconductor wafer to be measured mounted on the stage surface of the stage body, and A stage for a semiconductor wafer prober, comprising a suction hole that communicates with the suction hole, and a mark provided on the stage surface of the main body for positioning the suction hole and each chip on the semiconductor wafer to be measured.
JP14093486A 1986-06-17 1986-06-17 Stage for semiconductor wafer prober Pending JPS62296532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14093486A JPS62296532A (en) 1986-06-17 1986-06-17 Stage for semiconductor wafer prober

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14093486A JPS62296532A (en) 1986-06-17 1986-06-17 Stage for semiconductor wafer prober

Publications (1)

Publication Number Publication Date
JPS62296532A true JPS62296532A (en) 1987-12-23

Family

ID=15280216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14093486A Pending JPS62296532A (en) 1986-06-17 1986-06-17 Stage for semiconductor wafer prober

Country Status (1)

Country Link
JP (1) JPS62296532A (en)

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