JPS62135809A - Preparation of liquid crystal display device - Google Patents

Preparation of liquid crystal display device

Info

Publication number
JPS62135809A
JPS62135809A JP60277271A JP27727185A JPS62135809A JP S62135809 A JPS62135809 A JP S62135809A JP 60277271 A JP60277271 A JP 60277271A JP 27727185 A JP27727185 A JP 27727185A JP S62135809 A JPS62135809 A JP S62135809A
Authority
JP
Japan
Prior art keywords
photoresist
substrate
light
liquid crystal
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60277271A
Other languages
Japanese (ja)
Other versions
JPH0816751B2 (en
Inventor
Kunihisa Saito
斉藤 訓久
Yukihiro Iwashita
幸廣 岩下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60277271A priority Critical patent/JPH0816751B2/en
Publication of JPS62135809A publication Critical patent/JPS62135809A/en
Publication of JPH0816751B2 publication Critical patent/JPH0816751B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

PURPOSE:To enable complete shielding from light by forming light shielding insulative thin film utilizing a photoresist which has been used for patterning a transparent electrode on other part of at least one substrate of confronting substrates than said transparent electrode, as masking material. CONSTITUTION:Photoresist 3 is coated on the whole part of the upper surface of transparent electroconductive film in a substrate having transparent electroconductive film 2 (e.g. ITO film or SnO2 film, etc.) on one side of a transparent substrate 1. Then, the substrate 1 is exposed and developed to treat the photoresist 3 for patterning, and the part uncoated with the photoresist is removed by etching. Thereafter, a light shielding insulative material layer 4 is formed by vacuum deposition or sputtering using metallic oxide or org. or inorg. pigment, and a light shielding and insulative material layer 4 is formed on other parts of the substrate than the part of the transparent electrode 2 by removing the light shielding and insulative layer 4 formed on the photoresist 2 together with the photoresist 2 by dipping the substrate 1 in aq. alkali or acetone. Among light shielding insulative materials, Fe2O3, NiO, etc., are effective. By this method, a light shielding layer having superior characteristics can be formed on an exact position with a relatively simple process.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、液晶表示装置に於て、表示品質を向上するた
め表示パターン以外の部分の光反射及び光透過を防止す
る膜を形成する方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for forming a film that prevents light reflection and light transmission in areas other than the display pattern in order to improve display quality in a liquid crystal display device. Regarding.

〔従来の技術〕[Conventional technology]

液晶表示装置に於て表示パターン以外の部分の光透過及
び光反射を防止すると、ブラックストライプの効果を発
揮し表示の鮮鋭問が増すため、表示品を向上できる事が
知られている。従来この碌な効果を得るためには、 1)液晶の中へ二色性染料を添加するG−H法2)透過
率の低^偏光板を使用する。    。
It is known that preventing light transmission and light reflection in areas other than the display pattern in a liquid crystal display device produces a black stripe effect and increases the sharpness of the display, thereby improving the display quality. Conventionally, in order to obtain this powerful effect, 1) the GH method of adding a dichroic dye into the liquid crystal, 2) the use of a polarizing plate with low transmittance. .

3)液晶セル内面の点灯不要部分へ光遮断膜を形成し光
を遮断する。
3) A light blocking film is formed on the inner surface of the liquid crystal cell where lighting is not required to block light.

等の方法が考えられていたが、3)の方法が光遮断効果
からして最も有効な方法であると考えられており、その
製造方法としては従来、下記の様な方法が取られていた
Methods such as 3) have been considered, but method 3) is considered to be the most effective method due to its light blocking effect, and the following methods were conventionally used for its production. .

1)ゼラチン等の水溶性高分子材料に重クロム酸塩等の
感材全添加して感光f!E’を付与し、光を遮断するべ
き部分にバター二/グした後、必要とする分光15f注
を有する染料で染色する。
1) Photosensitive f! After applying E' and buttering the parts that should block light, dye with a dye having the required spectral intensity of 15 f.

2)A7.ハ、 Cr  等の金aim又はp、o、 
、 MgO、coo 、 N4o等の金属酸化物の薄膜
金蒸着あるvhはスパッタリング法により透明電画基板
)zlC形収しフォトエツチング法によりパターンニン
グする。
2) A7. C, Cr, etc. gold aim or p, o,
A thin film of metal oxide such as MgO, COO, N4O, etc. is deposited on a transparent electrographic substrate by sputtering and patterned by photoetching.

等である。etc.

〔発明が解決しようとする間琶点〕[The problems that the invention attempts to solve]

l)の方法は必要な光遮断特性を得るのに1μ〜2μ程
度のl[厚が必要である事と耐熱性が180℃権度と低
いため蔽晶セル!!造工程の熱処理条件?管理する必要
がらり液晶表示装置の表示寿命に悪影響全没はしている
。又21の方法は、へ!、刈。
Method 1) requires a thickness of about 1μ to 2μ to obtain the necessary light-blocking properties, and the heat resistance is low at 180°C, making it difficult to use a crystalline cell! ! Heat treatment conditions during manufacturing process? The need for management is having a negative impact on the display life of the liquid crystal display device. Also, for 21 methods, go to! , Kari.

Cr等の導体金属を用いる場合、透明wL匝とのショー
ト不良を防ぐため光遮断膜と透明!1Mの間に間隔金施
ける必要があり完全に光を遮断する事は出来ない、又I
l′e t03 s M170+ COO等の金属酸化
物を使用する場合でも、該金属@1ヒ物が不透明でちる
ため透明titlliに対するアジイメント操作が困難
であり、前記透明電属パターンと1riJ記金属及び金
属酸化物のパターンニング立置のズレにより完全な遮光
が出来ない等の間眺点があった。
When using a conductive metal such as Cr, a light shielding film and a transparent! It is necessary to provide an interval between 1M and it is not possible to completely block out the light, and I
Even when a metal oxide such as M170+ COO is used, it is difficult to perform an adjustment operation on a transparent titlli because the metal oxide is opaque and dusty. There were some viewpoints where complete light shielding was not possible due to misalignment of the oxide patterning.

〔開蓋t′#6決するための手段〕 本発明は、上記の間租点を解決するために、金属酸化物
等の絶縁物による光遮断1−金、透明電甑?パターンニ
ングする際便用したフォトレジスト?そのまま残してマ
スキング材として利用し、該基板に前記絶縁物?真空法
等により収嗅する。いわゆるリフトオフ法で形成する事
により上記間頌を解決し、良好な光遮断%註金有する薄
膜を液晶表示装置内に形成することができた。
[Means for deciding when to open the lid t'#6] In order to solve the above-mentioned drawbacks, the present invention provides light shielding using an insulating material such as a metal oxide. Photoresist used for patterning? Leave it as is and use it as a masking material, and apply the insulating material to the substrate. Obtain odor using vacuum method, etc. By forming the film by a so-called lift-off method, the above-mentioned problem was solved, and a thin film having a good light blocking percentage could be formed in a liquid crystal display device.

〔作用〕[Effect]

本発明1u図にもとずいて説明すると、凱1図(α)の
様に透明基板1の片面に工To又は8nO。
The present invention will be explained based on Figure 1u. As shown in Figure 1 (α), one side of the transparent substrate 1 is coated with oxide or 8nO.

等の透明透電膜2を有する基板に於て、該透明電i t
 ハターンニングするため(b)の様にフォトレジスト
3t−前記透明導電膜2の上全面に塗布する。
In a substrate having a transparent conductive film 2 such as
For patterning, photoresist 3t is coated on the entire surface of the transparent conductive film 2 as shown in (b).

しかる後露光、現慮する事によりC)−3の様に7オト
レジスト?パターンニングする。しかる後、前記透明導
電膜がフォトレジストにより被覆されていない部分をエ
ツチングして除去しく口)の櫟な状態とする。次に金属
酸化物又は有機、無機顔料等による光遮断le縁材層4
を真空蒸着法又はスパッタリング法により?)の様な状
態に形成する。しかる後、アルカリ水層液、又はアセト
/中へ基板l全浸漬しフォトレジスト2と該フォトレジ
スト2の上に乗っている光遮断絶縁1−4を除去し?)
の通り透明電画2以外の部分に光遮断絶縁層4を形成す
る。
After exposure, 7 otoresist as shown in C)-3? Patterning. Thereafter, the portions of the transparent conductive film that are not covered with the photoresist are etched and removed, leaving a square shape. Next, a light-blocking edge material layer 4 made of metal oxide, organic, inorganic pigment, etc.
By vacuum evaporation method or sputtering method? ). Thereafter, the entire substrate 1 is immersed in an alkaline aqueous solution or acetate, and the photoresist 2 and the light-blocking insulation 1-4 placed on the photoresist 2 are removed. )
As shown, a light-blocking insulating layer 4 is formed on a portion other than the transparent electrolyte 2.

ここで、光速断絶縁材料として、金属酸化物、例えば、
pe、o8. H4O、C(10、MgO等が有効であ
り。
Here, as the light-fast insulation material, metal oxide, for example,
pe, o8. H4O, C(10, MgO, etc.) are effective.

前記金属酸化物材料’klK?!蒸着又はスパッタリン
グ法により、単独又は2種類μとの異種物質を組合せて
積層したり、混合して成膜する事で、より良好な光遮断
′特性を得る事がFfr能である。又、金属酸化物以外
の材料として無機あるいは有機の顔料をスパッタリング
法により成膜する事が可能でおる。
The metal oxide material 'klK? ! It is possible to obtain better light-blocking properties by stacking or mixing different materials such as μ alone or in combination with two kinds of μ by vapor deposition or sputtering to obtain better light-blocking characteristics. Furthermore, it is possible to form a film using an inorganic or organic pigment as a material other than metal oxides by sputtering.

前記顔料を使用する場合、前記金属酸化物を使用する場
合に比べて必要とされる分光特性を比較的自由に選択で
きる点に大きなメリットが有る。
When using the pigment, there is a great advantage in that the required spectral characteristics can be selected relatively freely compared to when using the metal oxide.

]1列〕 次に本発明1jt実施例によって詳細く説明する。]1 column] Next, the present invention will be explained in detail by way of an embodiment.

実施列1 麻1図(めの様VC透明電賑2を形成した後、フォトレ
ジスト3が前記透明電匝2の上に残っている状態でF6
.o、 t−スパッタリング法により麻1図ωの機な状
態に100OAの厚さで形成する。しかる後ωの基板を
KOHIQチ水m液に1分間浸漬し、フォトレジスト3
を剥離し純水で充分リンスする。この様な方法で形成さ
れた光遮断時の光透過率i1.5%以下であり発明の目
的を達成するOK必要充分な′p!j性を宵していた。
Implementation row 1 Hemp 1 diagram (After forming the eye-like VC transparent conductor 2, F6 with the photoresist 3 remaining on the transparent conductor 2)
.. It is formed with a thickness of 100 OA in the shape of 100 mm by the o, t sputtering method. After that, the substrate of ω was immersed in KOHIQ water solution for 1 minute, and the photoresist 3
Peel off and rinse thoroughly with pure water. The light transmittance i when the light is blocked formed by such a method is 1.5% or less, which is sufficient to achieve the purpose of the invention. I had sex that night.

実施例2 前記実施列1に於てFgO,を500Aスパツタリング
法で形成した後、さらに該F202による光遮断K k
 Ic Coo k、 500 Aスパッタリング法で
形成する。
Example 2 After forming FgO by the 500A sputtering method in the above-mentioned Example Row 1, light blocking K k was further formed by the F202.
It is formed by Ic Cook, 500A sputtering method.

し小る後、実施列1と同様にしてフォトレジストを剥離
する。500A程度の厚みを持つF’6.03膜は長波
長側Yc元もれが有るため黄褐色である。又500A穆
度の厚みを持りCOO膜を短波長側に光漏れが有り青色
である。したがって?$03の膜とC,0の嘆は補色の
関係に有り両方を積層する事により良好な遮″#:、″
#性を得た。
After cooling down, the photoresist is peeled off in the same manner as in Example 1. The F'6.03 film with a thickness of about 500 A has a yellowish brown color due to leakage of Yc elements on the long wavelength side. Also, the COO film has a thickness of 500A, and there is light leakage on the short wavelength side, resulting in a blue color. therefore? The film of $03 and the color of C,0 have a complementary color relationship, and by laminating both, good shielding is achieved.
#I got sex.

実施列3 帆1図(−の状態の基板に対し、シアン、マゼンタ、イ
エローの3色の有機顔料を各々等針混合したものをター
ゲットとしてスパッタリング法により前記有機顔料によ
る光遮断層を150OAの厚さで形成した。しかる後肢
基板をアセトンに1分間浸漬しフォトレジスト全除去し
た後、フレオンでリンスした。この様にして出来た光遮
断層の光透過率は5%以下であり本発明の目的金達説す
るのに必要充分な¥i性を有していた。
A light blocking layer made of the organic pigments was formed to a thickness of 150 OA by sputtering using a mixture of organic pigments of three colors cyan, magenta, and yellow at equal needles as a target on the substrate in the state shown in Figure 1 (-). The hindlimb substrate was immersed in acetone for 1 minute to completely remove the photoresist, and then rinsed with Freon.The light-blocking layer thus formed had a light transmittance of 5% or less, which is the object of the present invention. He had the necessary and sufficient character to earn money.

〔発明の効果〕〔Effect of the invention〕

以上%説明したように、透明11E甑を形成する時使用
したフォトレジスト金利用してり7トオ7法により透明
電極以外の部分に金属酸fヒ物あるいは無機及び有機顔
料からなる光遮断層を比較的簡単な工程で良好な特性を
有する層を正確な位置[ζ形成する事が可能である。し
たがって表示品質の良IA液晶表示装置全安価に提供で
きる。
As explained above, using the photoresist gold used to form the transparent 11E pottery, a light-blocking layer made of metal acid, arsenic, or inorganic and organic pigments is applied to the parts other than the transparent electrode using the 7-to-7 method. It is possible to form a layer with good properties at a precise position [ζ] through a relatively simple process. Therefore, it is possible to provide an IA liquid crystal display device with good display quality at a low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(α)〜(1)は本発明による光遮断絶縁層の形
成工程側説明図。 1−透明ガラス基板 2−透明導電膜 3−フォトレジスト 4−光遮断絶縁層 以   上
FIGS. 1(α) to 1(1) are explanatory diagrams of the process side of forming a light-blocking insulating layer according to the present invention. 1 - Transparent glass substrate 2 - Transparent conductive film 3 - Photoresist 4 - Light blocking insulating layer and above

Claims (4)

【特許請求の範囲】[Claims] (1)液晶層をはさみ内面に透明電極を有して対向する
基板からなる液晶表示装置の製造において、前記対向基
板のすくなくとも一方の基板の透明電極以外の部分に前
記透明電極をエッチング法によりパターンニングすると
き用いたフオトレジストをマスキング材として使用して
光遮断絶縁薄膜を形成することを特徴とする液晶表示装
置の製造方法。
(1) In manufacturing a liquid crystal display device consisting of opposing substrates sandwiching a liquid crystal layer and having transparent electrodes on their inner surfaces, the transparent electrode is patterned by etching on a portion of at least one of the opposing substrates other than the transparent electrode. 1. A method of manufacturing a liquid crystal display device, comprising forming a light-blocking insulating thin film using a photoresist used in the coating as a masking material.
(2)光遮断絶縁薄膜が、金属酸化物であることを特徴
とする特許請求の範囲第1項記載の液晶表示装置の製造
方法。
(2) The method for manufacturing a liquid crystal display device according to claim 1, wherein the light-blocking insulating thin film is a metal oxide.
(3)金属酸化物が、Fe_2O_3、MgO、C_0
O、NiOのうち少なくとも一つから成ることを特徴と
する特許請求の範囲第二項の液晶表示装置の製造方法。
(3) The metal oxide is Fe_2O_3, MgO, C_0
The method for manufacturing a liquid crystal display device according to claim 2, characterized in that the liquid crystal display device is made of at least one of O and NiO.
(4)光遮光絶縁膜が、有機顔料であることを特徴とす
る特許請求の範囲第1項記載の液晶表示装置の製造方法
(4) The method for manufacturing a liquid crystal display device according to claim 1, wherein the light-shielding insulating film is an organic pigment.
JP60277271A 1985-12-10 1985-12-10 Liquid crystal display manufacturing method Expired - Fee Related JPH0816751B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60277271A JPH0816751B2 (en) 1985-12-10 1985-12-10 Liquid crystal display manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60277271A JPH0816751B2 (en) 1985-12-10 1985-12-10 Liquid crystal display manufacturing method

Publications (2)

Publication Number Publication Date
JPS62135809A true JPS62135809A (en) 1987-06-18
JPH0816751B2 JPH0816751B2 (en) 1996-02-21

Family

ID=17581196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60277271A Expired - Fee Related JPH0816751B2 (en) 1985-12-10 1985-12-10 Liquid crystal display manufacturing method

Country Status (1)

Country Link
JP (1) JPH0816751B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6429802A (en) * 1987-07-24 1989-01-31 Toppan Printing Co Ltd Color filter
US5091792A (en) * 1990-04-13 1992-02-25 International Business Machines Corporation Liquid crystal display having reduced ito shading material and method of manufacturing same
US5419991A (en) * 1991-12-19 1995-05-30 Sony Corporation Method of manufacturing a liquid crystal display
US5508134A (en) * 1993-06-29 1996-04-16 Sharp Kabushiki Kaisha Liquid crystal element manufacturing method
US5664982A (en) * 1994-10-18 1997-09-09 Shipley Company, L.L.C. Manufacturing method for a liquid crystal display

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108681166B (en) * 2018-05-16 2021-01-26 京东方科技集团股份有限公司 Preparation method of substrate for display, substrate for display and display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561016A (en) * 1979-06-19 1981-01-08 Sony Corp Production of liquid crystal display device
JPS5627114A (en) * 1979-08-10 1981-03-16 Canon Inc Liquid crystal display cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561016A (en) * 1979-06-19 1981-01-08 Sony Corp Production of liquid crystal display device
JPS5627114A (en) * 1979-08-10 1981-03-16 Canon Inc Liquid crystal display cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6429802A (en) * 1987-07-24 1989-01-31 Toppan Printing Co Ltd Color filter
US5091792A (en) * 1990-04-13 1992-02-25 International Business Machines Corporation Liquid crystal display having reduced ito shading material and method of manufacturing same
US5419991A (en) * 1991-12-19 1995-05-30 Sony Corporation Method of manufacturing a liquid crystal display
US5508134A (en) * 1993-06-29 1996-04-16 Sharp Kabushiki Kaisha Liquid crystal element manufacturing method
US5664982A (en) * 1994-10-18 1997-09-09 Shipley Company, L.L.C. Manufacturing method for a liquid crystal display

Also Published As

Publication number Publication date
JPH0816751B2 (en) 1996-02-21

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