JPS62134949A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS62134949A
JPS62134949A JP60275419A JP27541985A JPS62134949A JP S62134949 A JPS62134949 A JP S62134949A JP 60275419 A JP60275419 A JP 60275419A JP 27541985 A JP27541985 A JP 27541985A JP S62134949 A JPS62134949 A JP S62134949A
Authority
JP
Japan
Prior art keywords
lead
resin
swelled
leads
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60275419A
Other languages
Japanese (ja)
Inventor
Kenjirou Mitake
三嶽　健次郎
Yumi Miyakita
宮北　由美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60275419A priority Critical patent/JPS62134949A/en
Publication of JPS62134949A publication Critical patent/JPS62134949A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To eliminate the immersion of moisture from externally by forming a swelled portion swelled in thicknesswise direction and in perpendicular direction to the thicknesswise direction at a lead portion of a resin-sealed lead frame. CONSTITUTION:A part of a portion disposed in a sealing resin 6 of each lead 2 becomes a swelled portion 2a swelled at its periphery. Since the leads 2 and the resin 6 are the same temperature and the resin and the metal leads have weak affinity, a small gap 7 is formed between both. Since the metal leads 2 have larger expansion coefficient than the resin 6, the leads 2 are pulled in a direction secured b itself. Since a perpendicularly bent portion exists at the inner end of the lead, when the lead 2 is pulled toward a pellet to move the swelled portion, a gap between the swelled taper of the pellet side and the resin is eliminated to prevent moisture from immersing from the exterior by this portion.

Description

【発明の詳細な説明】 〔産業上の利用分野Ｊ 不発明は、半導体装置、特にリードフレームを用いてリ
ード付けを行い、樹脂封止し九半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field J] The present invention relates to a semiconductor device, and particularly to a semiconductor device in which leads are attached using a lead frame and resin-sealed.

〔従来の技術Ｊ 半導体素子（ベレット）に外部リード付は金行い、樹脂
封止全行う場合に用いられるリードフレームは、前記半
導体素子を搭載し固着する半導体素子搭載部（アイラン
ドという）と、このアイランドの周囲に内端部が配置さ
れた多数のリード金もつリード部との２つの部分から構
成されており、前記アイランドに半導体素子を固着し、
この半導体素子の電極ランドとアイランド周囲のリード
内端との間をボンディング線で接続後、前記半導体素子
を搭載したアイランド、リード内端部、ボンディングワ
イヤを共に樹脂で封止固定することにより、樹脂封止半
導体ａｔができ上る。[Prior art J] A lead frame used when attaching external leads to a semiconductor element (bullet) is made of metal and is completely sealed with resin has a semiconductor element mounting part (called an island) on which the semiconductor element is mounted and fixed, and this It is composed of two parts: a lead part having a large number of lead metals whose inner ends are arranged around the island, and a semiconductor element is fixed to the island,
After connecting the electrode land of this semiconductor element and the inner end of the lead around the island with a bonding wire, the island on which the semiconductor element is mounted, the inner end of the lead, and the bonding wire are sealed and fixed together with resin. A sealed semiconductor at is completed.

〔発明が解決しようとする問題点Ｊ 上述の従来のリードフレームは、通常金属板を、プレス
による打抜きや、エツチング等に工す力ロエして作るた
めに、厚さが一定であった。又、膨張係数は、金属製の
リードフレームの万が、封止樹脂よりも大きい。従って
、第３図の部分断面図に示すように、アイランド１に固
層した半導体素子４を樹脂６で封止した時と、温度が変
化した場合は、少なくともリードフレームのり−ド８の
厚嘔万同の樹脂６の界面に、連続し九隙間７ができる。[Problem to be Solved by the Invention J] The conventional lead frame described above has a constant thickness because it is usually made from a metal plate by punching with a press, etching, etc. Further, the expansion coefficient of a metal lead frame is always larger than that of a sealing resin. Therefore, as shown in the partial cross-sectional view of FIG. Nine continuous gaps 7 are formed at the interface between all the resins 6.

この隙間７は、リード内端部と半導体素子との闇を接続
している金属製のボンディングワイヤ５と封止樹脂との
界面にも同様の理由でできる。そのため、半導体装置の
外部より、水分が封止樹脂とリード及びボンディングワ
イヤの界面の隙間を伝わり、半導体素子に到達し、半導
体素子に悪影響金与えるという欠点が従来の樹脂封止半
導体装置にはあっ友。This gap 7 is also formed at the interface between the sealing resin and the metal bonding wire 5 that connects the inner end of the lead to the semiconductor element for the same reason. Therefore, conventional resin-sealed semiconductor devices do not have the disadvantage that moisture from outside the semiconductor device travels through the gaps between the sealing resin and the interface between the leads and bonding wires, reaches the semiconductor element, and adversely affects the semiconductor element. friend.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点に対し、不発明では、樹脂封止されているリ
ードフレームのリード部分に厚さ方向とそれに垂直方向
とに膨大し友膨大部を設け、外部より水分が侵入しない
ようにしている。In order to solve the above problem, in the present invention, the lead portion of the lead frame sealed with resin is provided with an expanded portion that expands both in the thickness direction and in a direction perpendicular to the thickness direction to prevent moisture from entering from the outside.

〔実施例〕〔Example〕

つぎに不発明を実施例により説明する。 Next, the invention will be explained using examples.

第１図（ａ）は不発明の一実施例の封止樹Ｊ１ｍを透視
した平面図、同図（ｂ）は同図（ａ）のＡ−Ａ断面図で
ある。第１図（ａ）　、　（ｂｌにおいて、リードフレ
ームの半導体素子搭載部（アイランド）１に半尋体素子
午が搭載固着され、アイランド１の周囲に配置されたリ
ードフレームの多数のり−ド２の内端部と半導体素子４
のｔｕｔｉパッドとの間をボンディングワイヤ５で接続
後、半導体素子４を搭載したアイランドおよびリード内
端部ならびにボンディングワイヤ５は、共に樹脂６で包
まれ封止されている。FIG. 1(a) is a plan view seen through the sealing tree J1m of an embodiment of the invention, and FIG. 1(b) is a sectional view taken along line AA in FIG. 1(a). In FIGS. 1(a) and 1(bl), a semicircular element meridian is mounted and fixed on a semiconductor element mounting portion (island) 1 of a lead frame, and a large number of boards 2 of the lead frame are arranged around the island 1. Inner end and semiconductor element 4
After connecting with the tuti pad using the bonding wire 5, the island on which the semiconductor element 4 is mounted, the inner end of the lead, and the bonding wire 5 are both wrapped and sealed with a resin 6.

封止後において、各リードの他端側を連結している連結
枠から各リードは切シ離され、それからリード折り曲げ
整形を経て半導体装置は完厄品となる０ ところが、本例においては、各リード２の封止樹脂体６
の内部に位置する部分の一部が、周囲に膨大し几膨大部
２ａとなっている。なお、アイランド１を連結枠に吊る
吊シリード３にも同様の膨大部３ａが設けられている。After sealing, each lead is separated from the connection frame that connects the other end of each lead, and then the semiconductor device is turned into a complete product after the leads are bent and shaped. Sealing resin body 6 of lead 2
A part of the portion located inside expands around the periphery to form an expanded portion 2a. Incidentally, a similar enlarged portion 3a is provided on the hanging series lead 3 for suspending the island 1 from the connecting frame.

第２図（ａ）　、　（ｂ）は、第１図のリードの膨大部
２ａの作用効果を説明する几めの部分断面図である。FIGS. 2(a) and 2(b) are detailed partial sectional views illustrating the effects of the enlarged portion 2a of the lead shown in FIG. 1.

まず、第２図（ａ）は、前述の樹脂封止直後のリード膨
大部近傍を示すもので、リード２と封止樹脂６とは四じ
温度であり、樹脂と金ｋＩ４製のリードとは親和力が弱
いため、両者の間にわずかなすきま７が生じる。第２図
（ｂ）は、封入後冷却した状態の膨大部を示すもので、
金Ｗ４ｊＦ！！のリード２の万が、封入樹脂６より膨張
係数が大きいため、リード２は、それ自身が固定されて
いる方向に引かれる。第１図を参照すると、リード内端
に直角に曲った部分があるため、リード２はペレットの
方向に引かれる。そのｔめ膨大部が移動すると、ペレッ
ト側の膨大部テーパーと樹脂の間の隙間がなくなり、外
部よりの水分の侵入をこの部分で防ぐことができる。但
し、このテーパーは、リードの厚さ方向とそれに垂直な
方向の両万全含む族りに必要である。First, FIG. 2(a) shows the vicinity of the lead bulge immediately after the resin sealing mentioned above. Since the affinity is weak, a slight gap 7 is created between the two. Figure 2(b) shows the ampullae in a cooled state after being sealed.
Gold W4jF! ! Since the expansion coefficient of the lead 2 is larger than that of the encapsulating resin 6, the lead 2 is pulled in the direction in which it is fixed. Referring to FIG. 1, the lead 2 is pulled toward the pellet due to the right angle bend at the inner end of the lead. When the second enlarged portion moves, the gap between the tapered enlarged portion on the pellet side and the resin disappears, and this portion can prevent moisture from entering from the outside. However, this taper is necessary to fully include both the thickness direction of the lead and the direction perpendicular to it.

〔発明の効果〕〔Effect of the invention〕

以上説明したように不発明は、半導体装置のリードフレ
ームの樹脂内のリード部分の一部に、リードフレームの
厚さ方向及びそれに垂直方向にテーパをもつ膨大部つけ
ることにより、樹脂封止時の高温状態から半導体素子の
動作温度に冷却した時に、金属製のリードフレームが封
止樹脂ニジ。As explained above, the invention has been achieved by providing a part of the lead part in the resin of the lead frame of a semiconductor device with an enlarged part tapered in the thickness direction of the lead frame and in the direction perpendicular to the lead frame. When the metal lead frame is cooled from a high temperature state to the operating temperature of the semiconductor element, the sealing resin leaks.

大きく縮むことを利用し、リードフレームと封止樹脂の
間にできる隙間をふさぐようにし、外部から半導体素子
へ水分の侵入を防ぐことができる効果がある。By taking advantage of the large shrinkage, the gap created between the lead frame and the sealing resin is closed, which has the effect of preventing moisture from entering the semiconductor element from the outside.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）は不発明の一実施例の封止樹脂を透視して
示す平面図、同図中）は同図（ａ）のＡ−Ａ断面図、第
２図（ａ）　、　（ｂ）は本発明の作用効果を説明する
几めの、リード膨大部近傍を示す断面図、第３図は従来
の半導体装置の部分断面図である。 １・・・リードフレームアイランド、２・・・リードフ
レームリード部、２ａ・・・膨大部、３・・・吊りリー
ド、４・・・半導体素子（ペレット）、５・・・ボンデ
ィングワイヤ、６・・・封止樹脂、７・・・隙間。 代理人　弁理士　　内　原　　　音１・　　。 ・ζ− （α） ｃｂノ ８　ｌ　虐 第７図 躬３　凶FIG. 1(a) is a plan view showing the sealing resin of an embodiment of the invention, FIG. b) is a detailed cross-sectional view showing the vicinity of the lead enlarged portion for explaining the effects of the present invention, and FIG. 3 is a partial cross-sectional view of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1... Lead frame island, 2... Lead frame lead part, 2a... Bulk part, 3... Hanging lead, 4... Semiconductor element (pellet), 5... Bonding wire, 6... ... Sealing resin, 7... Gap. Agent Patent Attorney Oto Uchihara 1.・ζ- (α) cbノ8 l Atrocities 7th illustration 3 Kyou

Claims (1)

【特許請求の範囲】[Claims] リードフレームの半導体素子搭載部に半導体素子を搭載
し、樹脂封止した半導体装置において、前記リードフレ
ームのリード部の前記樹脂封止体内に位置する一部にお
いて、周りに膨大した膨大部を有していることを特徴と
する半導体装置。In a semiconductor device in which a semiconductor element is mounted on a semiconductor element mounting portion of a lead frame and sealed with resin, a portion of the lead portion of the lead frame located within the resin sealing body has an enlarged portion surrounding the lead portion. A semiconductor device characterized by:
JP60275419A 1985-12-06 1985-12-06 Semiconductor device Pending JPS62134949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60275419A JPS62134949A (en) 1985-12-06 1985-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60275419A JPS62134949A (en) 1985-12-06 1985-12-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS62134949A true JPS62134949A (en) 1987-06-18

Family

ID=17555241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60275419A Pending JPS62134949A (en) 1985-12-06 1985-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS62134949A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124864A (en) * 1990-09-14 1992-04-24 Matsushita Electric Works Ltd Lead frame

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124864A (en) * 1990-09-14 1992-04-24 Matsushita Electric Works Ltd Lead frame

Similar Documents

Publication Publication Date Title
JP2915892B2 (en) Resin-sealed semiconductor device and method of manufacturing the same
US6147398A (en) Semiconductor device package
JPS62134949A (en) Semiconductor device
JPS63296252A (en) Resin sealed semiconductor device
JPH0323654A (en) Resin-sealed semiconductor device
JPS611042A (en) Semiconductor device
JPS5842246A (en) Semiconductor device
JPS5826176B2 (en) Resin-encapsulated semiconductor device
JPS5812736B2 (en) hand clasp
JPS6064455A (en) Semiconductor device
JPH03248455A (en) Lead frame
JPH0728001B2 (en) Semiconductor device
JPS61240644A (en) Semiconductor device
JPH01215049A (en) Semiconductor device
JPH03206651A (en) Semiconductor package device
JPS62122253A (en) Semiconductor device
JPS62119945A (en) Integrated circuit device
JPH09134929A (en) Manufacture of semiconductor integrated circuit device, and mold device and lead frame used for it, and semiconductor integrated circuit device using it
JPS62183535A (en) Semiconductor device
KR0119759Y1 (en) Bottom Leaded Semiconductor Package
JPH0254567A (en) Resin-sealed semiconductor device
JPH03129840A (en) Resin-sealed semiconductor device
JPS62183544A (en) Resin molded semiconductor device
JPH0475356A (en) Semiconductor device
JPH0228353A (en) Resin sealed type semiconductor device