JPS62130517A - 液相エピタキシヤル成長装置 - Google Patents
液相エピタキシヤル成長装置Info
- Publication number
- JPS62130517A JPS62130517A JP26275785A JP26275785A JPS62130517A JP S62130517 A JPS62130517 A JP S62130517A JP 26275785 A JP26275785 A JP 26275785A JP 26275785 A JP26275785 A JP 26275785A JP S62130517 A JPS62130517 A JP S62130517A
- Authority
- JP
- Japan
- Prior art keywords
- slider
- room
- crystal growth
- chamber
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 title claims description 15
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004891 communication Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26275785A JPS62130517A (ja) | 1985-11-22 | 1985-11-22 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26275785A JPS62130517A (ja) | 1985-11-22 | 1985-11-22 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62130517A true JPS62130517A (ja) | 1987-06-12 |
| JPH043101B2 JPH043101B2 (enrdf_load_stackoverflow) | 1992-01-22 |
Family
ID=17380165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26275785A Granted JPS62130517A (ja) | 1985-11-22 | 1985-11-22 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62130517A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102037680B1 (ko) * | 2011-10-27 | 2019-10-29 | 웅진코웨이 주식회사 | 제습장치의 열교환기 건조방법 및 이를 이용하는 제습장치 |
-
1985
- 1985-11-22 JP JP26275785A patent/JPS62130517A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH043101B2 (enrdf_load_stackoverflow) | 1992-01-22 |
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