JPS6213020U - - Google Patents
Info
- Publication number
- JPS6213020U JPS6213020U JP10329385U JP10329385U JPS6213020U JP S6213020 U JPS6213020 U JP S6213020U JP 10329385 U JP10329385 U JP 10329385U JP 10329385 U JP10329385 U JP 10329385U JP S6213020 U JPS6213020 U JP S6213020U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- acoustic wave
- surface acoustic
- uneven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 11
- 238000010897 surface acoustic wave method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 4
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
第１図は、本考案の一実施例に係る弾性表面波
装置を示す平面図である。第２図Ａ〜Ｃはそれぞ
れ、第１図の圧電薄膜の側面の凸凹の形状の例を
拡大して示す平面図である。第３図は、基板側面
での弾性表面波の反射を模式的に示す平面図であ
る。第４図は、第１図の圧電薄膜をスパツタリン
グによつて形成する際に用いられるマスクの一例
を示す平面図である。第５図は、スパツタリング
によつて形成した圧電薄膜の概略断面図であり、
第１図の線―方向に見たものに相当する。第
６図は、スパツタリングの際に用いられるマスク
の他の例を示す断面図である。第７図は、第６図
のマスクを用いたスパツタリングによつて形成し
た圧電薄膜の概略断面図である。第８図は、従来
の弾性表面波装置の一例を示す平面図である。第
９図は、従来の弾性表面波装置の他の例を示す平
面図である。
２……入力トランスジユーサ、３……出力トラ
ンスジユーサ、４……弾性表面波伝搬路、５……
基板、５１，５２……側面、６……圧電薄膜、６
１，６２……側面、７……マスク、７１，７２…
…側面、Ｄ……深さ。
FIG. 1 is a plan view showing a surface acoustic wave device according to an embodiment of the present invention. FIGS. 2A to 2C are respectively enlarged plan views showing examples of uneven shapes on the side surfaces of the piezoelectric thin film shown in FIG. 1. FIGS. FIG. 3 is a plan view schematically showing reflection of surface acoustic waves on the side surface of the substrate. FIG. 4 is a plan view showing an example of a mask used when forming the piezoelectric thin film of FIG. 1 by sputtering. FIG. 5 is a schematic cross-sectional view of a piezoelectric thin film formed by sputtering,
Corresponds to what is seen in the line direction in Figure 1. FIG. 6 is a sectional view showing another example of a mask used during sputtering. FIG. 7 is a schematic cross-sectional view of a piezoelectric thin film formed by sputtering using the mask of FIG. 6. FIG. 8 is a plan view showing an example of a conventional surface acoustic wave device. FIG. 9 is a plan view showing another example of a conventional surface acoustic wave device. 2...Input transducer, 3...Output transducer, 4...Surface acoustic wave propagation path, 5...
Substrate, 51, 52...Side surface, 6...Piezoelectric thin film, 6
1,62...side, 7...mask, 71,72...
...side, D...depth.
Claims (1)
薄膜を設けた構造の弾性表面波装置において、前
記圧電薄膜を、当該圧電薄膜の弾性表面波伝搬路
に沿う両側面に対応する側面の形状が凸凹になつ
ているマスクを用いて形成することによつて、前
記圧電薄膜の前記両側面の形状を凸凹にし、かつ
当該凸凹の弾性表面波伝搬路に垂直方向の深さを
弾性表面波の１／４波長以上にしていることを特
徴とする弾性表面波装置。 In a surface acoustic wave device having a structure in which a piezoelectric thin film is provided on the surface of the substrate excluding the peripheral portion thereof, the piezoelectric thin film is arranged such that the piezoelectric thin film has a side surface shape corresponding to both side surfaces along the surface acoustic wave propagation path of the piezoelectric thin film. By forming the piezoelectric thin film using a mask having an uneven surface, the shape of both side surfaces of the piezoelectric thin film is made uneven, and the depth in the direction perpendicular to the surface acoustic wave propagation path of the uneven surface is set to one part of the surface acoustic wave. A surface acoustic wave device characterized by having a wavelength of /4 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10329385U JPS6213020U (en) | 1985-07-05 | 1985-07-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10329385U JPS6213020U (en) | 1985-07-05 | 1985-07-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6213020U true JPS6213020U (en) | 1987-01-26 |
Family
ID=30975714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10329385U Pending JPS6213020U (en) | 1985-07-05 | 1985-07-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6213020U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015001900A1 (en) * | 2013-07-02 | 2015-01-08 | 日本碍子株式会社 | Acoustic wave device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182312A (en) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | Surface acoustic wave device |
-
1985
- 1985-07-05 JP JP10329385U patent/JPS6213020U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182312A (en) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | Surface acoustic wave device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015001900A1 (en) * | 2013-07-02 | 2015-01-08 | 日本碍子株式会社 | Acoustic wave device |
| US10230349B2 (en) | 2013-07-02 | 2019-03-12 | Ngk Insulators, Ltd. | Acoustic wave device |
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