JPS621291A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS621291A
JPS621291A JP13944285A JP13944285A JPS621291A JP S621291 A JPS621291 A JP S621291A JP 13944285 A JP13944285 A JP 13944285A JP 13944285 A JP13944285 A JP 13944285A JP S621291 A JPS621291 A JP S621291A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser element
heat sink
irregularities
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13944285A
Other languages
Japanese (ja)
Inventor
Fumiko Susa
須佐 文子
Kunio Ito
国雄 伊藤
Yuichi Shimizu
裕一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13944285A priority Critical patent/JPS621291A/en
Publication of JPS621291A publication Critical patent/JPS621291A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase adhesive strength, and to reduce thermal resistance by forming irregularities to the bottom of a semiconductor laser element, also shaping irregularities at a position, where the semiconductor laser element is bonded, on a heat sink and fusion-bonding the semiconductor laser element and the irregularities of the heat sink so as to be mutually engaged. CONSTITUTION:Irregularities are formed to the bottom of a semiconductor laser element 4 and one part of the surface of a heat sink 5 at intervals of several dozen mum, the semiconductor laser element 4 and the heat sink 5 are mounted so that mutual irregularities are engaged excellently, and the base of the laser element 4 and one part of the surface of the heat sink 5 are fusion- bonded by a fusion metal 3. A laser outgoing surface for the semiconductor laser element 4 and one end surface of the heat sink 5 are both positioned so s to be disposed on the same plane. Accordingly, positioning is made precise, and the surface area of adhesion is increased, thus augmenting adhesive strength while lowering thermal resistance, then acquiring the high effect of heat dissipation.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、コンパクトディスクプレーヤやビデオディス
クプレーヤ等に用いることができる半導体レーザ装置に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser device that can be used in compact disc players, video disc players, and the like.

従来の技術 近年、半導体レーザ装置は、コンパクトディスクプレー
ヤやビデオディスクプレーヤなどの需要の増加とともに
益々重要な地位を占めるようになり、高信頼性が要求さ
れるようになってきた。
2. Description of the Related Art In recent years, semiconductor laser devices have come to occupy an increasingly important position as demand for compact disc players, video disc players, etc. has increased, and high reliability has been required.

以下、図面を参照しながら従来の半導体レーザ装置にり
いて説明する。第2図において、1は半導体レーザ素子
、2はその半導体レーザ素子1を表面に融着、搭載した
ヒートシンクで、両者は半導体レーザ素子1のレーザ出
射面とヒートシンク2の一側面とが一致するように融着
されている。3はヒートシンク20表面上に付着された
融着金−である。このように構成された半導体レーザ装
置を動作させる場合、半導体レーザ素子1とヒートシン
ク20間に電圧を印加する。
Hereinafter, a conventional semiconductor laser device will be explained with reference to the drawings. In FIG. 2, 1 is a semiconductor laser element, and 2 is a heat sink on which the semiconductor laser element 1 is fused and mounted. is fused to. Reference numeral 3 denotes fused gold deposited on the surface of the heat sink 20. When operating the semiconductor laser device configured in this manner, a voltage is applied between the semiconductor laser element 1 and the heat sink 20.

発明が解決しようとする問題点 しかしながら、上記のような構成では、レーザ発振の際
、半導体レーザ素子1で発生する熱は、半導体レーザ素
子1が、ヒートシンク2に付着されている底面から放散
されるが、底面積が小さいために十分に熱が放散されな
い。さらに、半導体レーザ素子1をヒートシンク2に融
着する場合、融着する位置が明確でないので、第3図の
ように中心線A−A’よシずれたシ、第4図のように傾
いて融着されたシする。またこのとき、半導体レーザ索
子1はその底面のみが融着されるので、十分な接着強度
が得られないことがあシ、そのため熱抵抗も高くなると
いう問題点があった。
Problems to be Solved by the Invention However, in the above configuration, the heat generated in the semiconductor laser element 1 during laser oscillation is dissipated from the bottom surface of the semiconductor laser element 1 attached to the heat sink 2. However, due to the small base area, heat cannot be dissipated sufficiently. Furthermore, when the semiconductor laser element 1 is fused to the heat sink 2, the fusion position is not clear, so it may be deviated from the center line A-A' as shown in Figure 3, or tilted as shown in Figure 4. It is fused. Further, at this time, since only the bottom surface of the semiconductor laser cable 1 is fused, sufficient adhesion strength may not be obtained, resulting in a problem that thermal resistance also increases.

本発明は、上記問題点に鑑み°、半導体レーザ素子の融
着位置精度を高め、かつ接着強度を強くするとともに熱
抵抗を下げ、レーザ発振の際に発生する熱を十分放散さ
せるようにした半導体レーザ装置を提供するものである
In view of the above-mentioned problems, the present invention has been developed to improve the accuracy of the fusion position of semiconductor laser elements, to strengthen the bonding strength, to lower the thermal resistance, and to sufficiently dissipate the heat generated during laser oscillation. The present invention provides a laser device.

問題点を解決するための手段 上記問題点を解決するために、半導体レーザ素子の底面
に凹凸を形成し、ヒートシンク上の半導体レーザ素子を
接着する位置にも凹凸を作シ、半導体レーザ素子とヒー
トシンクの凹凸が互いにかみあうように、融着するもの
である。
Means for Solving the Problems In order to solve the above problems, we formed irregularities on the bottom surface of the semiconductor laser element, and also created irregularities at the position where the semiconductor laser element was bonded on the heat sink. The concave and convex portions of the material are fused together so that they interlock with each other.

作  用 ヒートシンクの所定の位置に予め設けられた凹凸と半導
体レーザ素子の底面の凹凸がかみあって接着されている
ので、半導体レーザ素子がずれたシ、あるいは傾いて固
着されることはなく、位置合わせが正確になる。また、
接着面積が大きくなるため、接着強度が向上するととも
に、熱抵抗が小さくなシ、半導体レーザ素子から発せら
れた熱を十分放散することができる。
Function: The unevenness pre-prepared at a predetermined position on the heat sink and the unevenness on the bottom surface of the semiconductor laser element are engaged and bonded together, so the semiconductor laser element will not be misaligned or fixed at an angle, and alignment will be easier. becomes accurate. Also,
Since the bonding area becomes larger, the bonding strength is improved, and the thermal resistance is small, so that the heat emitted from the semiconductor laser element can be sufficiently dissipated.

実施例 以下図面によシ実施例を詳細に説明する。Example Embodiments will be described in detail below with reference to the drawings.

第1図は、本発明の一実施例を示したもので、4は半導
体レーザ素子、6は半導体レーザ素子4を融着したヒー
トシンクであり、半導体レーザ素子4の底面とヒートシ
ンク60表面の一部に数十μ間隔で凹凸が設けられ、互
いの凹凸がうまくかみあわさるように設置され、融着金
属3によって融着されている。また半導体レーザ素子4
のレーザ出射面とヒートシンク5の一側面とはともに同
一平面上にあるように位置づけられる。
FIG. 1 shows an embodiment of the present invention, in which 4 is a semiconductor laser element, 6 is a heat sink to which the semiconductor laser element 4 is fused, and the bottom surface of the semiconductor laser element 4 and a part of the surface of the heat sink 60 are shown. Concave and convex portions are provided at intervals of several tens of micrometers, and the concave and convex portions are placed so that they mesh well with each other, and are fused together by a welding metal 3. In addition, the semiconductor laser element 4
The laser emitting surface of the heat sink 5 and one side of the heat sink 5 are positioned so that they are both on the same plane.

発明の詳細 な説明したように、本発明によれば、ヒートシンクの所
定の位置に予め設けられた凹凸と半導体レーザ素子の底
面の凹凸がかみあって接着されているので、位置合わせ
が正確になシ、かつ接着表面積が大きくなるので接着強
度が向上するとともに熱抵抗′が低下し、高い放熱効果
を有するものである。
As described in detail, according to the present invention, the unevenness provided in advance at a predetermined position of the heat sink and the unevenness on the bottom surface of the semiconductor laser element are engaged and bonded together, so that accurate alignment can be achieved. In addition, since the adhesive surface area is increased, the adhesive strength is improved and the thermal resistance is lowered, resulting in a high heat dissipation effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における半導体レーザ装置の
斜視図、第2図は従来の半導体レーザ装置の斜視図、第
3図および第4図はそれぞれ従来例の半導体レーザ素子
がずれたシ傾いてステムに固着された例を示す上面図で
ある。 1.4・・・・・・半導体レーザ素子、2.6・・・・
・・ヒートシンク、3・・・・・・融着金属。 代理人の氏名弁理士 中 尾 敏 男 ほか1名J°”
°社11 第2図    1
FIG. 1 is a perspective view of a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a perspective view of a conventional semiconductor laser device, and FIGS. It is a top view which shows the example which is fixed to the stem in an inclined manner. 1.4... Semiconductor laser element, 2.6...
...Heat sink, 3...Fusion metal. Name of agent: Patent attorney Toshio Nakao and one other person J°”
°sha 11 Figure 2 1

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザ素子のヒートシンクに融着する側の表面お
よび前記ヒートシンクの前記半導体レーザ素子を融着す
る面に、それぞれ凹部または凸部が形成され、前記半導
体レーザ素子の凹部または凸部と前記ヒートシンク上の
凸部または凹部が嵌合してなることを特徴とする半導体
レーザ装置。
Recesses or protrusions are formed on the surface of the semiconductor laser element on the side to be fused to the heat sink and on the surface of the heat sink to which the semiconductor laser element is fused, respectively, and the recesses or protrusions of the semiconductor laser element and the surface of the heat sink are formed. A semiconductor laser device characterized by having convex portions or concave portions that fit together.
JP13944285A 1985-06-26 1985-06-26 Semiconductor laser device Pending JPS621291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13944285A JPS621291A (en) 1985-06-26 1985-06-26 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13944285A JPS621291A (en) 1985-06-26 1985-06-26 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS621291A true JPS621291A (en) 1987-01-07

Family

ID=15245293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13944285A Pending JPS621291A (en) 1985-06-26 1985-06-26 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS621291A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421786U (en) * 1987-07-30 1989-02-03
JPH07193315A (en) * 1993-12-27 1995-07-28 Nec Corp Semiconductor laser system and manufacture thereof
JP2008205326A (en) * 2007-02-22 2008-09-04 Sanyo Electric Co Ltd Submount and semiconductor device using it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421786U (en) * 1987-07-30 1989-02-03
JPH07193315A (en) * 1993-12-27 1995-07-28 Nec Corp Semiconductor laser system and manufacture thereof
JP2008205326A (en) * 2007-02-22 2008-09-04 Sanyo Electric Co Ltd Submount and semiconductor device using it

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