JPS62127347A - Polyarylene sulfide resin composition for use in sealing electronic component - Google Patents

Abstract

PURPOSE:To provide the titled compsn. which has excellent moisture resistance and does not detriorate electrical characteristics under high-temperature conditions, by blending a polyarylene sulfide resin with silica and bismuth oxide. CONSTITUTION:A polyarylene sulfide resin (A) having a logarithmic viscosity of 0.03-0.8 in alpha-chloronaphthalene at 206 deg.C, composed of at least 70mol% of a repeating unit of the formula, which is (partially crosslinked) polyarylene sulfide resin, a mixture thereof or a modified product thereof, is blended with 50-30wt% fibrous, amorphous, spherical or hollow silica (B), 0.01-20wt% bismuth oxide (C) selected from among Bi2O3, BiO2, Bi2O5 and Bi4O7 (pref. Bi2O3) and optionally, 0.01-20wt% antimonic acid and 0.5-60wt% fibrous potassium silicate. If desired, a filler, other resins, a coupling agent, a thermal stabilizer, a lubricant, etc., are added thereto to obtain the titled compsn. having a melt viscosity of 3,000 P or below at 330 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Use) The present invention relates to a polyphenylene sulfide resin composition used for encapsulating electronic parts.

(Prior art and problems) Polyphenylene sulfide resin is known as an engineering plastic that is resistant to marine chemicals, heat resistance, flame retardancy, and electrical properties, and has recently attracted attention as a resin for sealing electronic components. There is.

However, electronic components sealed with polyphenylene sulfide resin have inferior moisture resistance compared to conventional electronic components sealed with epoxy pine resin. In other words, poly(7-phenylene sulfide) contains ionic impurities such as sodium ions and chloride ions, which are extremely busy compared to epoxy resins, and therefore electrons (due to interaction with load voltage and moisture) are contained. There are disadvantages in that the electrodes and wiring of the parts are corroded, resulting in single wires and increased leakage current.

(Means for solving the problem) As a result of intensive study in view of the above situation, the present inventors found that
Polyarylene sulfide bark, silica.

The inventors discovered that electronic components sealed with a polyarylene sulfide resin composition containing bismuth oxide as an essential component do not have the above-mentioned drawbacks, leading to the present invention.

In addition, although this was unexpected, the electrical properties of the composition, such as volume resistivity, do not deteriorate even in high-temperature atmospheres, and it has extremely excellent properties as a sealing phase material for sub-components. It turned out to be something.

That is, the present invention relates to polyarylene sulfide.

The object of the present invention is to provide a polyarylene sulfide resin composition for sealing face parts, which contains silica and bismuth oxide, and has the bismuth oxide added in an amount of 0.01 to 201 t% based on the total weight of the material.

In the present invention, the polyarylene sulfide resin is an uncrosslinked or partially crosslinked JIJ arylene sulfite resin, a mixture thereof, or a modified product, and has a logarithmic viscosity [η] (
where [η] is 206°C in α-chloronaphthalene at a polymer concentration of 0.4 P/10017.
According to the following formula [η] -tn (relative viscosity)/polymer humidity, j
) - the value given. ) is 0.03 to 0.8, preferably 0.07 to 0.3.

The above polyarylene sulfide resins are preferred because polyphenylene sulfide resins having the general formula provide compositions with superior properties.

Bismuth oxide used in the present invention is Bi, O, BiO□
.

Bi2O5, B140. etc., and B12O3 is particularly preferred. The bismuth compound accounts for 0.01 to 2 of all mh compounds.
If the weight is less than 0.01%, the effect of improving moisture resistance properties will be small, and if it exceeds 20'rp, the fluidity of the composition will decrease when melted. Undesirable.

In the present invention, the use of antimony in combination with the bismuth compound has a great effect of improving the drastic humidity characteristics.

Antimonic acid has the general formula 5b205・n (n: 0-4)
It is an anhydrous or hydrated product of antimony pentoxide with the structure: More preferable antimonic acids have a crystalline structure. The antimonic acid is present in an amount of 0.01 to 0.01 in the entire composition.
It is preferable to use 20% by weight from the viewpoint of improving moisture resistance and maintaining fluidity when melting the bath.

In the present invention, the silica added to the polyarylene sulfur resin is a well-known & string-like, irregularly shaped silica.

Spherical or hollow shapes are used. The amount of silica added is preferably 50 to 3,501 cm in the total composition.

In addition, in the present invention, 0 fibrous siliceous calcium is contained in the entire composition.
．． It is preferable to add 5 to 60 parts by weight.

Furthermore, in the present invention, other well-known and commonly used fillers can be lubricated. As a filler, glass f;i! ,Wai,
Silica fiber, alumina fiber, silicon carbide fiber, silicon nitride fiber, titanium & potassium, calcium silicate other than the above, gypsum fiber, Merck, clay, mica, glass peas, bentonite, calcium carbonate, calcium oxide,
Alumina, mullite, calcium sulfate, barium sulfate,
Zinc oxide.

These include magnesium oxide, iron oxide, iron hydroxide, hydrotalcite, etc., including commercially available natural products, purified products (1) synthetic products, fibrous products, and crushed products (1) spherical and hollow products.

The resin composition for encapsulating electronic components of the present invention can be used in combination with other resins without departing from the purpose of the present invention. Examples of such resins include -lyethylene.

Known and commonly used resins and rubbers such as polypropylene, styrene butadiene rubber, hydrogenated styrene butadiene rubber, olefin rubber, polyphenylene oxide, ethylene propylene rubber, polycarbonate, epoxy resin, silicone resin, fluororesin, silicone rubber, fluororubber, etc. , elastomer. Further, antioxidants, heat stabilizers, lubricants, crystal nucleating agent 1 colorants, ultraviolet absorbers, coupling agents, silicone oil, etc. can be added within the range that does not impede the object of the present invention. In particular, in the present invention, coupling agents such as mercaptosilane coupling agent, vinylsilane coupling agent, aminosilane coupling agent, 7# ring agent, chlorosilane coupling agent, epoxysilane coupling M, vinylaminosilane coupling agent,
Cyclohexyl 7 Rankatsu Spring Offshore 1. Methacryloxysilane power.

! Ring agent, perfluorocrane coupling agent.

The purpose of the present invention is achieved by adding 0.1 to 5% by weight of one or more of alkylsilane coupling agents, titanate coupling agents, zircoaluminate coupling agents, etc. to the total composition. preferred to do.

The resin composition for encapsulating electronic components of the present invention has a melt viscosity of 3000 at 330°C (measured using a flow tester under the following conditions: load 110 mm, 1φ x 2t die used, preheating time 5 minutes, condition)
It is preferably less than 2000 poise, particularly less than 2000 poise.

In the present invention, the encapsulation of terminal parts generally includes, but is not limited to, electronic products such as ICs, transistors, diodes, coils, capacitors, resistors, varistors, and connectors.

Each A↓ sensor, converter, switch, etc. or a hybrid of these and 77 parts are sealed with a resin composition to provide mechanical protection, maintain electrical insulation, and depend on the external atmosphere! Vfa
This refers to things that are done for the purpose of preventing computerization.

(Effects of the Invention) The resin composition of the present invention can obtain good moisture resistance even if it contains some ionic substances, and also does not cause deterioration of electrical properties even in a high temperature atmosphere. Since it is small in amount, it is suitable as an encapsulating phase material for electronic parts.

(Example) Next, the invention will be observed from Examples and Comparative Examples.

In addition, the part in the example is Motoya Wataru.

Examples 1 to 9 and Comparative Example 1 Polyphenylene sulfide resin (pps, Philips Itroleum Co., Ltd. Rydon V-1) *Bath-fused silica, wollastonite, glass fiber, bismuth oxide, antimonic acid, aminosilane and himerkadetosilane were blended as shown in Table 1 and then melted into pellets using an extruder. Using this, the cylinder temperature was 30℃ and the injection pressure was 150℃.
The silicon trannostar to which the lead wires were attached was sealed under conditions of 1/aj and a mold temperature of 150°C. The obtained product was heated at 120°C under 2 atmospheres of steam pressure for 50 minutes.
After leaving it for some time, the leakage current between the collector base (v
clo=! 50v) was added. The results are shown in Table 1. Bismuth oxide (Bi203) * Antimonic acid (sb
By adding 2o5), the leakage current is reduced and the imaxiality of the transistor is improved.

Examples 10 to 11 and Comparative Example 2 pps (Philips 4 Trollium Rydon V-
1) After blending 100 parts of fused silica, bismuth and antimony compounds and 3 parts of aminosilane in the proportions shown in Table 2, the mixture was melted into pellets using an extruder. Using this, the cylinder temperature was 330℃ and the injection pressure was 150 kg.
/cIA A test piece for volume resistivity measurement was molded under the condition of a mold temperature of 150°C, and this was placed in an atmosphere of 150°C.
Volume resistivity was measured according to STM D257. The composition of unexploded BAK exhibits little deterioration in properties even at high temperatures.

,−,n Table 2

Claims (1)

[Claims] Contains polyarylene sulfide, silica and bismuth oxide, and contains 0.01 to 20% of the bismuth oxide in the total composition.
% by weight of a polyarylene sulfide resin composition for encapsulating electronic components.