JPS6212658B2 - - Google Patents
Info
- Publication number
- JPS6212658B2 JPS6212658B2 JP54151852A JP15185279A JPS6212658B2 JP S6212658 B2 JPS6212658 B2 JP S6212658B2 JP 54151852 A JP54151852 A JP 54151852A JP 15185279 A JP15185279 A JP 15185279A JP S6212658 B2 JPS6212658 B2 JP S6212658B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- substrate
- concentration
- layer
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5674929A JPS5674929A (en) | 1981-06-20 |
| JPS6212658B2 true JPS6212658B2 (ko) | 1987-03-19 |
Family
ID=15527668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15185279A Granted JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674929A (ko) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5918151A (en) * | 1993-12-28 | 1999-06-29 | Nippon Steel Corporation | Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same |
| KR102482185B1 (ko) | 2022-09-15 | 2022-12-29 | (주)코리아테크 | 스틱형 용기 |
| KR102484068B1 (ko) | 2021-10-22 | 2023-01-04 | (주)코리아테크 | 스틱형 용기 |
-
1979
- 1979-11-22 JP JP15185279A patent/JPS5674929A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5918151A (en) * | 1993-12-28 | 1999-06-29 | Nippon Steel Corporation | Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same |
| KR102484068B1 (ko) | 2021-10-22 | 2023-01-04 | (주)코리아테크 | 스틱형 용기 |
| KR102482185B1 (ko) | 2022-09-15 | 2022-12-29 | (주)코리아테크 | 스틱형 용기 |
| KR102517535B1 (ko) | 2022-09-15 | 2023-04-05 | (주)코리아테크 | 스틱형 용기 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5674929A (en) | 1981-06-20 |
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