JPS621264B2 - - Google Patents
Info
- Publication number
- JPS621264B2 JPS621264B2 JP54036875A JP3687579A JPS621264B2 JP S621264 B2 JPS621264 B2 JP S621264B2 JP 54036875 A JP54036875 A JP 54036875A JP 3687579 A JP3687579 A JP 3687579A JP S621264 B2 JPS621264 B2 JP S621264B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- voltage
- mis
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 70
- 230000003071 parasitic effect Effects 0.000 claims description 44
- 230000002265 prevention Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 230000010354 integration Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3687579A JPS55130170A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3687579A JPS55130170A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55130170A JPS55130170A (en) | 1980-10-08 |
| JPS621264B2 true JPS621264B2 (zh) | 1987-01-12 |
Family
ID=12481946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3687579A Granted JPS55130170A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device and method of fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55130170A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5816568A (ja) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | 絶縁ゲ−ト型電界効果半導体装置 |
| JPS58182274A (ja) * | 1982-04-20 | 1983-10-25 | Seiko Epson Corp | Ｍｏｓ型半導体装置 |
| US4684967A (en) * | 1984-05-04 | 1987-08-04 | Integrated Logic Systems, Inc. | Low capacitance transistor cell element and transistor array |
| JPS61281554A (ja) * | 1985-06-07 | 1986-12-11 | Fujitsu Ltd | Ｍｉｓ型半導体装置 |
| JPS6370575A (ja) * | 1986-09-12 | 1988-03-30 | Sony Corp | Ｍｏｓ論理集積回路 |
-
1979
- 1979-03-30 JP JP3687579A patent/JPS55130170A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55130170A (en) | 1980-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5939755A (en) | Power IC having high-side and low-side switches in an SOI structure | |
| US5656842A (en) | Vertical mosfet including a back gate electrode | |
| JP3575908B2 (ja) | 半導体装置 | |
| JP3462301B2 (ja) | 半導体装置及びその製造方法 | |
| US5463238A (en) | CMOS structure with parasitic channel prevention | |
| US6689648B2 (en) | Semiconductor device having silicon on insulator and fabricating method therefor | |
| KR100350648B1 (ko) | 모스 트랜지스터 및 그 제조 방법 | |
| WO1985002716A1 (en) | Semiconductor integrated circuit | |
| KR100333168B1 (ko) | Ｓｏｉ 반도체장치 및 그 제조방법 | |
| US6294817B1 (en) | Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication | |
| US4814288A (en) | Method of fabricating semiconductor devices which include vertical elements and control elements | |
| JP2991489B2 (ja) | 半導体装置 | |
| KR100266185B1 (ko) | 반도체 장치 | |
| JP3206026B2 (ja) | 高電圧用ｍｉｓｆｅｔを備える半導体装置 | |
| US4893164A (en) | Complementary semiconductor device having high switching speed and latchup-free capability | |
| US5350932A (en) | High voltage structures with oxide isolated source and resurf drift region in bulk silicon | |
| US6489657B1 (en) | Semiconductor device with improved channel stopper | |
| US4969020A (en) | Semiconductor device | |
| US6605843B1 (en) | Fully depleted SOI device with tungsten damascene contacts and method of forming same | |
| US5243234A (en) | Dual gate LDMOSFET device for reducing on state resistance | |
| US6060748A (en) | Semiconductor integrated circuit device using a silicon-on-insulator substrate | |
| JPS6119164A (ja) | 相補型集積回路とその製造方法 | |
| JPS621264B2 (zh) | ||
| US6188111B1 (en) | Dual gate semiconductor device for shortening channel length | |
| JPH02168666A (ja) | 相補型半導体装置とその製造方法 |