JPS621264B2 - - Google Patents

Info

Publication number
JPS621264B2
JPS621264B2 JP54036875A JP3687579A JPS621264B2 JP S621264 B2 JPS621264 B2 JP S621264B2 JP 54036875 A JP54036875 A JP 54036875A JP 3687579 A JP3687579 A JP 3687579A JP S621264 B2 JPS621264 B2 JP S621264B2
Authority
JP
Japan
Prior art keywords
region
source
voltage
mis
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54036875A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55130170A (en
Inventor
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3687579A priority Critical patent/JPS55130170A/ja
Publication of JPS55130170A publication Critical patent/JPS55130170A/ja
Publication of JPS621264B2 publication Critical patent/JPS621264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3687579A 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same Granted JPS55130170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3687579A JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3687579A JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Publications (2)

Publication Number Publication Date
JPS55130170A JPS55130170A (en) 1980-10-08
JPS621264B2 true JPS621264B2 (enrdf_load_stackoverflow) 1987-01-12

Family

ID=12481946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3687579A Granted JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55130170A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816568A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト型電界効果半導体装置
JPS58182274A (ja) * 1982-04-20 1983-10-25 Seiko Epson Corp Ｍｏｓ型半導体装置
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS61281554A (ja) * 1985-06-07 1986-12-11 Fujitsu Ltd Ｍｉｓ型半導体装置
JPS6370575A (ja) * 1986-09-12 1988-03-30 Sony Corp Ｍｏｓ論理集積回路

Also Published As

Publication number Publication date
JPS55130170A (en) 1980-10-08

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