JPS621257Y2 - - Google Patents
Info
- Publication number
- JPS621257Y2 JPS621257Y2 JP1981169954U JP16995481U JPS621257Y2 JP S621257 Y2 JPS621257 Y2 JP S621257Y2 JP 1981169954 U JP1981169954 U JP 1981169954U JP 16995481 U JP16995481 U JP 16995481U JP S621257 Y2 JPS621257 Y2 JP S621257Y2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- slider
- boat
- recess
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16995481U JPS5875771U (ja) | 1981-11-13 | 1981-11-13 | 液相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16995481U JPS5875771U (ja) | 1981-11-13 | 1981-11-13 | 液相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5875771U JPS5875771U (ja) | 1983-05-21 |
| JPS621257Y2 true JPS621257Y2 (OSRAM) | 1987-01-13 |
Family
ID=29961920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16995481U Granted JPS5875771U (ja) | 1981-11-13 | 1981-11-13 | 液相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5875771U (OSRAM) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5268167U (OSRAM) * | 1975-11-17 | 1977-05-20 |
-
1981
- 1981-11-13 JP JP16995481U patent/JPS5875771U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5875771U (ja) | 1983-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4468850A (en) | GaInAsP/InP Double-heterostructure lasers | |
| US4567060A (en) | Method of producing a semiconductor laser device | |
| US4371968A (en) | Monolithic injection laser arrays formed by crystal regrowth techniques | |
| US4946802A (en) | Semiconductor laser device fabricating method | |
| US4725112A (en) | Buried undercut mesa-like waveguide | |
| JPS5710285A (en) | Semiconductor laser | |
| JPS621257Y2 (OSRAM) | ||
| US4470368A (en) | LPE Apparatus with improved thermal geometry | |
| US4599787A (en) | Method of manufacturing a light emitting semiconductor device | |
| US4792960A (en) | Semiconductor laser | |
| US4574730A (en) | Melt dispensing liquid phase epitaxy boat | |
| GB2027261A (en) | Semiconductor laser | |
| US4639925A (en) | Semiconductor laser | |
| GB2062949A (en) | Single filament semiconductor laser with large emitting area | |
| JPS59119781A (ja) | 半導体レ−ザの製造方法 | |
| JPS6223191A (ja) | リツジ型半導体レ−ザ装置の製造方法 | |
| JP2940158B2 (ja) | 半導体レーザ装置 | |
| US4632709A (en) | Process for preventing melt-back in the production of aluminum-containing laser devices | |
| JPS6021895A (ja) | 液相成長方法 | |
| JPS61220422A (ja) | 液相成長装置及びそれを用いた液相成長方法 | |
| JPS6021586A (ja) | 化合物半導体装置 | |
| JPS58102584A (ja) | 半導体の加工方法 | |
| JPS5941885A (ja) | 半導体レ−ザ素子 | |
| JPH0740621B2 (ja) | 面発光型半導体レ−ザの製造方法 | |
| JPS61272990A (ja) | 半導体レ−ザ |