JPS62123404A - Semiconductor color image sensor and its production - Google Patents

Abstract

PURPOSE:To use zone plates as color filters and to simplify the production process of a semiconductor color image sensor by forming zone plates having required patterns correspondingly to photodiodes formed on a semiconductor substrate. CONSTITUTION:A flat film 15 is formed on photodiodes 14 formed on a semiconductor substrate 10, and a resist 16 is applied on this film 15, and patterns of zone plates are described on the surface of the resist 16 by a charged beam 17. Development is performed to form resist patterns 18, and an opaque film 19 (like a Cr film) is formed on all of the surface. The resist 16 is removed by a solvent to form patterns of zone plates 20. Since relations r<2>n=nlambdaf (n=1, 2, 3,...) are satisfied among a radius rn, a wavelength lambda of incident waves, and a focal length (f), the light having an optical wavelength can be converged in an optional position, and for example, the light having wavelengths near red, blue, and green is converged on photodiode 14 by zone plates 11-13.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor power sensor composed of seven first diodes and one zone diode, and a method for manufacturing the same.

[Conventional technology]

FIG. 4 shows the structure of a conventional conductive color image processor composed of a photodiode and a color filter. In FIG. 4, light incident from above passes through various color filters 1 formed on a photo diode 2 formed on a semiconductor substrate 4 via a flattening film 3, and then is transmitted to a film diode. 2, and the intensity of the incident light is detected. The color filter 1 in Figure 4 is formed to detect the intensity of each of the three primary colors of light (red, blue, green), and each JJ color filter 1 passes only light in a certain frequency band. 〇 [A problem in which invention is solved (7), which has a function (the invention is solved (7)) There were problems in that there were too many of them, and they were also sloppy.

[Means for solving problems]

The semi-four body color image sensor of the present invention was developed to solve the above problems, and is entirely formed with zone plates that can focus only light of a desired frequency onto a fixed position.

Further, in the manufacturing method of the present invention, pattern 'G' of the zone plate is formed by the charged beam muff multi-light method.

[Effect]

In the semiconductor color image sensor of the present invention, light t! of a desired frequency is applied to a predetermined zone plate. Get your injuries under control.

In the manufacturing method of the present invention, a fine pattern can be easily formed because charged beam exposure is used.

〔Example〕

First, the zone plate used in this invention will be explained. FIG. 3 shows the zone plate. Third
In the figure, the radius r, l, the wavelength λ of the incident wave, and the focal length J
(Express the relationship of f using equation (1).

r2n=nλf (n = 1, 2, 3, -) (
1) In Equation (1), light of a given wavelength can be focused at a given position by forming a pattern as shown in Figure 3.

FIG. 1 is a sectional view of a semiconductor collar four-main sensor showing an embodiment of the present invention. In FIG. 1, for example, zone plays 1-11, 12, and 13 are designed so that light with wavelengths around red, blue, and green are converged onto the first diode 14, respectively. Note that 10 is a semiconductor substrate, and 151 is a flattened film.

Therefore, by configuring the foot diode 14 and the zone plates 11 to 13 as shown in FIG. 1, it is possible to detect the red, blue, and edge light intensities at different times.

To form such zone plates 11 to 13,
Although it requires fine processing technology, using the charged beam exposure method, it is possible to form fine zone play 1, 11 to 13 patterns with high precision and relatively easily, and the number of steps is significantly reduced compared to conventional methods. It can be simplified to.

Next, the method of forming Ginobo 1.11 to 13 will be explained with reference to FIG.

FIGS. 2(a) to 2(e) are process cross-sectional views showing one embodiment of a method for manufacturing a zone plate using the 7ij7 electric beam exposure method.

First, as shown in FIG. 2(a), the photodiode 1
A planarizing film 15 is formed on 4, and a resist 16 is applied thereon.1. After that, use the charged beam 17 to draw a pattern of Seasive 1 No. 1. After that, development is performed to form a resist pattern 18, and an opaque film 19 (for example, a round Crl pattern) is formed on the entire surface (FIG. 2(b)).Then, the resist pattern 16 is removed with a solvent. ,
Patterns of Ginobo 1 and 20 are formed (Fig. 2 (e) 1゜ [Effects of the Invention]) As explained above, the present invention provides flattening on a foot die formed on a semiconductor substrate. Since a semiconductor color image sensor is constructed by forming a desired pattern of zone play 1 through the film, only light of a desired frequency can be focused on the desired position of the zone play 1, and red, blue , it has the advantage of being able to detect the light intensity of each edge.

Further, the method for manufacturing a semiconductor laser image sensor of the present invention has the advantage that a fine pattern can be easily obtained because a charged beam and exposure are used.

[Brief explanation of drawings]

Fig. 1 is a cross-sectional view of a semiconductor collar image sensor showing an embodiment of the present invention, and Figs. 2 (a) to (C) illustrate a method of manufacturing a semiconductor collar 1 main 7-J of the present invention. The upper section Ifi diagram and Fig. 3 are the non-go L of this invention.
Figure 4 is the conventional 'I' side view showing the configuration of -1.
, is a cross-sectional view of the four-body color image with the seven sensors not shown. In the figure, 1Q is a semiconductor substrate, 11 to 13 are zone plates, 14 is a photoguide A-de, 15 is a flattening film, 1
6 is a resist), 17 is a charged beam, 18 is a resist pattern, 19 is an unknown IFJ, and 20 is a zone plate. Note that the same or similar symbols in each figure indicate the same or equivalent parts. Agent Masuo Oiwa (2 others) Figure 1 10: Semiconductor substrate 11-13 Zone 7 Rate 14: Photodiode 15, half-layered film Figure 2 Figure 4 Figure 4 Procedural amendment (voluntary) 1 Invitation to Japan Year, Month, Day 3, Representative of the person making the amendment Moriya Shiki 4, Agent 5, Specification to be amended, (Detailed explanation column of the invention of H and Drawing 6, Contents of the amendment (1) Specification Insert the following explanatory text between lines 2 and 3 on page 3: ``This invention was made to solve the above problems, and uses a zone plate as a color filter.
The purpose of this invention is to obtain a semiconductor color image sensor with a simplified manufacturing process. Further, the manufacturing method of the present invention aims to obtain a highly accurate manufacturing method of a semiconductor color image sensor using charged beam exposure. ” (2) Also on page 3, lines 4-6, “This invention...”
・Correct the frequency of light as follows. The semiconductor color image sensor according to the present invention corrects light with a desired frequency. (3) Also on page 3, lines 12-17, “This invention...
·····It is formed. ” is corrected as follows. “In the semiconductor color image sensor of this invention,
Since the zone plate is used as the color filter, the manufacturing process of the color filter is simplified. Furthermore, in the method for manufacturing a zone plate according to the present invention,
Since charge beam exposure is used, the zone plate pattern can be easily formed with high precision. ” (4) Similarly, on page 4, line 1, “radius rn in Fig. 3” is changed to “n-th radius rn from the center in Fig. 3”.
and correct it. (5) Similarly, "Resist 16" on page 5, line 15 is corrected to "Resist pattern 18." (6) Similarly, in page 6, line 8, "fine pattern" is corrected to "zone plate pattern is highly accurate and". (7) Correct the surface part 2 figures (a), (b), and (C) as shown in the attached sheet. Figure 2 above

Claims (2)

[Claims] (1) A semiconductor color image sensor characterized in that a zone plate is formed in a desired pattern corresponding to a photodiode formed on a semiconductor substrate. (2) After forming the required number of photodiodes on a semiconductor substrate and forming a flattening film thereon, a resist is applied to the entire surface, and the resist surface is exposed to a charged beam to correspond to each photodiode. The zone plate is formed by drawing a desired pattern of the zone plate, developing it to form a resist pattern, forming an opaque film on the entire surface, and then removing the resist pattern. A method for manufacturing a semiconductor color image sensor.