JPH0442966A - Solid-state colored image sensing element - Google Patents

Solid-state colored image sensing element

Info

Publication number
JPH0442966A
JPH0442966A JP2147791A JP14779190A JPH0442966A JP H0442966 A JPH0442966 A JP H0442966A JP 2147791 A JP2147791 A JP 2147791A JP 14779190 A JP14779190 A JP 14779190A JP H0442966 A JPH0442966 A JP H0442966A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
curvature
dyed
condensing
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2147791A
Other languages
Japanese (ja)
Inventor
Yuuichi Kunosato
勇一 九ノ里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2147791A priority Critical patent/JPH0442966A/en
Publication of JPH0442966A publication Critical patent/JPH0442966A/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To make it possible to inhibit an irregularity by colors in a condensing rate by a method wherein the radiuses of curvature of a plurality of condensing lenses for making incident light condense are respectively set at a prescribed value according to the hue of each photoelectric conversion region. CONSTITUTION:Photodiodes 11 are formed in a semiconductor substrate 10 and a transparent resin layer 18 is applied on monochromatic solid-state image sensing elements. Then, a film to be dyed is applied on the layer 18, is patterned, is dyed into a necessary color and is fixed. At the time of the patterning, a focal point is shifted in a (+) or (-) direction to expose in the setting of a defocus without exposing in such a way that the focal point is adjusted on the film to be dyed, whereby patterns having the sag shape of a pattern edge can be formed. By dyeing and fixing, a colored lens 1 can be formed into the shape of a lens having a certain radius of curvature. Accordingly, by adjusting the amount of shift of the focal point of an aligner at the time of the patterning and dyeing conditions, the radiuses of curvature of condensing lenses can be respectively set at a prescribed value.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はカラー固体撮像素子に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a color solid-state image sensor.

〔従来の技術〕[Conventional technology]

従来、高感度で混色のないカラー固体撮像素子として例
えば、特開昭61−203663号公報に示されたもの
がある。第3図は該公報に示された従来のカラー固体撮
像素子を示す断面図で、図において、lOは半導体基板
、11は例えばフォトダイオードのような光電変換領域
、12は信号読み出し領域、13は遮光層、15.16
.11は色フィルタ、18は感光性透明樹脂平坦層、1
9はレンズ層である。
Conventionally, as a color solid-state imaging device with high sensitivity and no color mixture, there is one disclosed in, for example, Japanese Patent Laid-Open No. 61-203663. FIG. 3 is a cross-sectional view showing a conventional color solid-state image sensor disclosed in the publication. In the figure, IO is a semiconductor substrate, 11 is a photoelectric conversion region such as a photodiode, 12 is a signal readout region, and 13 is a Light shielding layer, 15.16
.. 11 is a color filter, 18 is a photosensitive transparent resin flat layer, 1
9 is a lens layer.

次に製造方法について説明する。Next, the manufacturing method will be explained.

第3図は通常のCCDインターライン方式の固体撮像素
子上に色フィルタ15.16.17及びレンズ層19を
形成したもので、色フィルタ15.16.17はポリビ
ニルアルコールアクリルなどの可染性樹脂層をリソグラ
フィ技術を用いて赤15、緑16、青17にそれぞれ染
色することにより形成されている。これらの色フィルタ
15.16.17の形成後、これら色フィルタの保護膜
として樹脂層18を形成する。最後に、レンズ層19と
なる樹脂をパターニング熱フローにより設け、レンズ層
19を形成する。
Fig. 3 shows a color filter 15, 16, 17 and a lens layer 19 formed on an ordinary CCD interline type solid-state image sensor. It is formed by dyeing the layers red 15, green 16, and blue 17 using lithography technology. After forming these color filters 15, 16, and 17, a resin layer 18 is formed as a protective film for these color filters. Finally, the resin that will become the lens layer 19 is provided by patterning heat flow to form the lens layer 19.

入射光はこのレンズ層19の曲率半径と樹脂層18の厚
さを調整することによって光電変換領域の中に集光され
る。
The incident light is focused into the photoelectric conversion region by adjusting the radius of curvature of the lens layer 19 and the thickness of the resin layer 18.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のカラー固体撮像素子は以上のように、入射光すべ
てを(無数の波長を含む白色光を)、同一のと曲率半径
を有するレンズ層、及び色フィルタ15.16.17を
通して光電変換領域11に集光させるように構成してい
るが、光は各波長、例えば赤系(長波長側)の光と、前
糸(短波長側)の光とでは屈折率が違うため、実際に集
光された入射光は波長によって異なった集光率をもつ、
特に前糸(短波長側)の光は赤系の光に比べて屈折率が
小さいために集光されにくく、また、一般に用いられて
いる充電変換部11であるフォトダイオードも前糸の感
度が低いため、前糸の光は赤系の光に比べて著しく、S
/Nが劣化するという問題点があった。
As described above, the conventional color solid-state image sensor passes all incident light (white light containing countless wavelengths) through the lens layer having the same radius of curvature and the color filter 15, 16, 17 to the photoelectric conversion region 11. However, since the refractive index of the light is different for each wavelength, for example, red light (long wavelength side) and light from the front thread (short wavelength side), it is difficult to actually focus the light. The incident light has a different focusing rate depending on the wavelength.
In particular, the light from the front thread (on the short wavelength side) has a smaller refractive index than red light, so it is difficult to focus, and the photodiode, which is the commonly used charge conversion unit 11, has a lower sensitivity for the front thread. Because of the low
There was a problem that /N deteriorated.

この発明は上記のような問題点を解消するためになされ
たもので、入射光の色に依らずに所望の集光率を得るこ
とができる高精度のカラー固体撮像素子を提供すること
を目的とする。
This invention was made to solve the above-mentioned problems, and its purpose is to provide a high-precision color solid-state imaging device that can obtain a desired light collection rate regardless of the color of incident light. shall be.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係るカラー固体撮像素子は、光電変換領域に
対応して設けた入射光を集光させるための複数の集光レ
ンズの曲率半径を、それぞれ各光電変換領域の色相に応
じて所定の値に設定するようにしたものである。
In the color solid-state image sensor according to the present invention, the radius of curvature of a plurality of condensing lenses provided corresponding to photoelectric conversion regions for condensing incident light is set to a predetermined value according to the hue of each photoelectric conversion region. It is set to .

また、この発明に係るカラー固体撮像素子は、さらにこ
の集光レンズを、前記各光電変換領域の色相に対応して
着色するようにしたものである。
Further, in the color solid-state imaging device according to the present invention, the condenser lens is further colored in accordance with the hue of each of the photoelectric conversion regions.

〔作用〕[Effect]

この発明におけるカラー固体撮像素子は、集光レンズを
、各色層によって所定の曲率半径を持ったものとしたの
で、各色相に応じて所望の集光率が得られ、入射光の波
長による集光率の違G)を調整でき、波長に関係なく同
一の高い集光率が得られる。
In the color solid-state image sensor of the present invention, since the condensing lens has a predetermined radius of curvature for each color layer, a desired condensing rate can be obtained according to each hue, and the condensing lens can be condensed according to the wavelength of the incident light. The difference in rate G) can be adjusted, and the same high light collection rate can be obtained regardless of the wavelength.

また、さらに前記各集光レンズを光電変換領域の色相に
対応して着色したので、不必要な光はレンズ部で吸収さ
れて光電変換部に集光されない。
Furthermore, since each of the condensing lenses is colored in accordance with the hue of the photoelectric conversion region, unnecessary light is absorbed by the lens portion and is not focused on the photoelectric conversion portion.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例によるカラー固体撮像素子の
構成を示す図であり、図において、10は半導体基板、
11は例えばフォトダイオード等のような光電変換領域
、12は信号読み出し領域、13は遮光層、1.2.3
は集光レンズ、18は透明樹脂層である。
FIG. 1 is a diagram showing the configuration of a color solid-state image sensor according to an embodiment of the present invention, in which 10 is a semiconductor substrate;
11 is a photoelectric conversion area such as a photodiode, 12 is a signal readout area, 13 is a light shielding layer, 1.2.3
18 is a condensing lens, and 18 is a transparent resin layer.

次に本実施例の製造方法について説明する。Next, the manufacturing method of this example will be explained.

まず、半導体基板10上にフォトダイオード11、信号
読み出し領域12等を形成した所謂モノクロ固体撮像素
子上に、透明樹脂層18を塗布する。この透明樹脂層1
8は少なくとも1μm以上の厚さであることが望ましい
First, a transparent resin layer 18 is coated on a so-called monochrome solid-state image sensor in which a photodiode 11, a signal readout area 12, etc. are formed on a semiconductor substrate 10. This transparent resin layer 1
It is desirable that 8 has a thickness of at least 1 μm or more.

次に、透明樹脂層18上に被染色膜(例えば重クロム酸
アンモニウム含有のゼラチン等)を塗布し、リソグラフ
ィ技術によってパターニングし、必要な色(例えば赤)
に染色する。
Next, a film to be dyed (e.g. gelatin containing ammonium dichromate) is applied on the transparent resin layer 18 and patterned using lithography technology to obtain the desired color (e.g. red).
dye.

染色後に固着法を用いてパターニングが他の色に染まら
ないように固着する。
After dyeing, a fixation method is used to fix the pattern to prevent it from being dyed with other colors.

ここで、パターニング時、例えば縮少露光装置を用いて
パターニングするときに、被染色膜上に焦点が合うよう
には露光せずに、焦点を(+)あるいは(−)方向にず
らしてデイフォーカス設定で露光することにより、パタ
ーンエツジのダした形状を持つパターンが形成できる。
At the time of patterning, for example, when patterning is performed using a reduction exposure device, the focus is shifted in the (+) or (-) direction instead of being exposed so that the dyed film is in focus. By exposing with the settings, a pattern with a rounded pattern edge can be formed.

また、染色、固着することによって、使用する染料、被
染色膜、及び染色条件等によって決まる膨潤が被染色膜
パターンの表面に一様に生ずるため、着色レンズ1をあ
る曲率半径をもつレンズ形状に形成できる。
In addition, by dyeing and fixing, swelling, which is determined by the dye used, the dyed film, the dyeing conditions, etc., occurs uniformly on the surface of the dyed film pattern, so the colored lens 1 is formed into a lens shape with a certain radius of curvature. Can be formed.

従って、被染色膜をリソグラフィ技術によってパターニ
ングし、必要な色に染色する際に、パターニング時の露
光装置の焦点のズレ量、及び染色条件を調整することに
より、集光レンズの曲率半径は所定の4fiに設定でき
、染色1〜だ色に対して所望の集光率が得られるように
調整できる。即ち、例えば、染色1−7だ色に対してそ
の集光率が最大となるようにも設定可能である。
Therefore, when patterning the film to be dyed using lithography technology and dyeing it in the desired color, the radius of curvature of the condenser lens can be adjusted to a predetermined value by adjusting the amount of focus shift of the exposure device during patterning and the dyeing conditions. It can be set to 4fi, and can be adjusted to obtain the desired light collection rate for dyeing 1 to orange. That is, for example, the light collection rate can be set to be maximum for dyeing 1-7 yellow.

なお、この着色レンズ1の曲率半径は被染色膜。Note that the radius of curvature of this colored lens 1 corresponds to the coloring film.

染料が変わっても染色条件、及び焦点のズレ置(ぼかし
量)によって制御可能である。
Even if the dye is changed, it can be controlled by the dyeing conditions and the focus shift position (blur amount).

また、他の集光レンズ2,3も同様のプロセスを経て、
それぞれの色に対応して所望の集光率が得られるよ・う
にその曲率半径を調整した着色レンズとする。
In addition, the other condensing lenses 2 and 3 go through the same process,
The colored lens has its radius of curvature adjusted so as to obtain the desired light collection rate corresponding to each color.

このような本実施例のものにおいては、各レンズ層1,
2.3の曲率半径4−1それぞれのレンズ層の持つ色に
対して所望の集光率となるように調整し、それぞれの色
相に対応して個別にその集光率を設定するようにしたの
で、特定の色相のみを最大の集光率となるようにしたり
、あるいは全ての入射光において同一の高い集光率が得
ら゛れるように設定することができ、従来問題となって
いた入射光の波長(色)の屈折率の迷いによる集光率の
バラツキを調整するすることができる。
In this embodiment, each lens layer 1,
2.3 Radius of curvature 4-1 The desired light condensing rate was adjusted for the color of each lens layer, and the condensing rate was set individually corresponding to each hue. Therefore, it is possible to set only a specific hue to have the maximum light collection rate, or to obtain the same high light collection rate for all incident light, which can solve the problem of incident light in the past. It is possible to adjust variations in the light collection rate due to variations in the refractive index of the wavelength (color) of light.

また、本実施例においては、1光レンズ1.2゜3をそ
れぞれ光電変換領域の色相に対応して着色するようにし
たので、1/ンズ1,2.3で必要な色以久の色が吸収
されることがなくなり、入射光の屈折率の違いによって
生じる信号読み出し領域12への迷光成分を低減できる
In addition, in this example, since the 1-light lenses 1.2°3 are colored in accordance with the hue of the photoelectric conversion area, the colors required by the 1/lenses 1 and 2.3 are different from each other. Since the light is not absorbed, it is possible to reduce the stray light component to the signal readout region 12 caused by the difference in the refractive index of the incident light.

なお、上記実施例では個別に被染色膜を塗4jバターニ
ングをしたが、これは同一処理で一度に数個の被染色膜
パターンを形成しても良く、この場合は第2図に示すよ
うに、上層にレジストのマスク20をかけて染色する。
In the above example, the dyed film was individually coated and patterned, but several dyed film patterns may be formed at once in the same process. In this case, as shown in FIG. Then, a resist mask 20 is applied to the upper layer and dyed.

また、この1/ンズの曲率半径の調整は上記実施例と同
様に染色条件等を調整することGこよって行う。
Further, the adjustment of the radius of curvature of this 1/ns is performed by adjusting the dyeing conditions etc. in the same manner as in the above embodiment.

また上記の実施例では、色相が3色である場合を例に示
したが、本発明は特に3色に限定されるものではなく、
素子によ1って種々の色相の合わ(士が可能であり、こ
の場合においても上記実施例と同様の効果を奏する。
Further, in the above embodiment, the case where the hue is three colors is shown as an example, but the present invention is not particularly limited to three colors,
Various hue combinations are possible depending on the element, and even in this case, the same effect as in the above embodiment can be achieved.

さらに、上記の実施例においては、レンズ1゜2.3を
染色法を用いて着色したが、これらの着色レンズ1.2
.3は、関料等を分散させた樹脂を熱フローさせること
によって形成してもよい。
Furthermore, in the above example, the lens 1.2.3 was colored using a dyeing method, but these colored lenses 1.2.
.. 3 may be formed by thermally flowing a resin in which a material or the like is dispersed.

〔発明の効果〕〔Effect of the invention〕

以上のよ・うにこの発明によれば、光電変換領域の色相
に対応1.て集光レンズの曲率半径を変え、それぞれの
1/ンズを独立に所定の集光率を有する最適形状のもの
に形成したので、各波長(色)の屈折率の違いより生じ
る集光率の色別バラツキを抑制できる効果がある。
As described above, according to the present invention, the hue of the photoelectric conversion area can be adjusted according to 1. By changing the radius of curvature of the condensing lens and forming each 1/lens independently into an optimal shape with a predetermined condensing rate, the condensing rate caused by the difference in the refractive index of each wavelength (color) can be reduced. This has the effect of suppressing color variations.

また、さらに集光レンズを各光電変換領域の色相に対応
して着色して形成したため、入射光の屈折率の違いによ
り、信号読み出し領域に不必要な光が入射するのを防止
でき、迷光成分を低減できる効果がある。
In addition, since the condensing lens is colored to correspond to the hue of each photoelectric conversion area, it is possible to prevent unnecessary light from entering the signal readout area due to the difference in the refractive index of the incident light, and to prevent stray light from entering the signal readout area. It has the effect of reducing

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例によるカラー固体撮像素子
を示す図、第2図はこの発明の他の実施例によるカラー
固体撮像素子の製造過程の一部を示す図、第3図は従来
のカラー固体撮像素子を示す図である。 1゜2.3は集光レンズ、lOは半導体基板、11は光
電変換領域、12ば信号読み出し領域、13は遮光膜、
15.16.17は色フィルタ、18は透明樹脂平坦層
、19はレンズ層、20はレジストマスクである。 なお図中、同一符号は同一、又は相当部分を示す。
FIG. 1 is a diagram showing a color solid-state image sensor according to an embodiment of the present invention, FIG. 2 is a diagram showing a part of the manufacturing process of a color solid-state image sensor according to another embodiment of the invention, and FIG. 3 is a diagram showing a conventional color solid-state image sensor. FIG. 2 is a diagram showing a color solid-state image sensor. 1゜2.3 is a condensing lens, IO is a semiconductor substrate, 11 is a photoelectric conversion region, 12 is a signal readout region, 13 is a light shielding film,
15, 16, and 17 are color filters, 18 is a transparent resin flat layer, 19 is a lens layer, and 20 is a resist mask. In the figures, the same reference numerals indicate the same or equivalent parts.

Claims (2)

【特許請求の範囲】[Claims] (1)同一半導体基板上にモザイク状に形成された光電
変換領域と、 前記光電変換領域で光電変換された信号を読み出す信号
読出領域と、 前記光電変換領域に対応して入射光を集光させるための
複数の集光レンズとを備えたカラー固体撮像素子におい
て、 前記各集光レンズは、前記各光電変換領域の色相に対応
してそれぞれ所定の曲率半径を有することを特徴とする
カラー固体撮像素子。
(1) A photoelectric conversion area formed in a mosaic shape on the same semiconductor substrate, a signal readout area for reading out a signal photoelectrically converted in the photoelectric conversion area, and condensing incident light corresponding to the photoelectric conversion area. A color solid-state imaging device comprising a plurality of condensing lenses, each of the condensing lenses having a predetermined radius of curvature corresponding to the hue of each photoelectric conversion region. element.
(2)前記各集光レンズは、前記各光電変換領域の色相
に対応して着色されていることを特徴とする請求項1記
載のカラー固体撮像素子。
(2) The color solid-state image sensor according to claim 1, wherein each of the condensing lenses is colored in accordance with the hue of each of the photoelectric conversion regions.
JP2147791A 1990-06-06 1990-06-06 Solid-state colored image sensing element Pending JPH0442966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2147791A JPH0442966A (en) 1990-06-06 1990-06-06 Solid-state colored image sensing element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2147791A JPH0442966A (en) 1990-06-06 1990-06-06 Solid-state colored image sensing element

Publications (1)

Publication Number Publication Date
JPH0442966A true JPH0442966A (en) 1992-02-13

Family

ID=15438290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2147791A Pending JPH0442966A (en) 1990-06-06 1990-06-06 Solid-state colored image sensing element

Country Status (1)

Country Link
JP (1) JPH0442966A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206429A (en) * 1992-01-27 1993-08-13 Toshiba Corp Colored microlens array and its manufacture
JPH0738075A (en) * 1993-07-23 1995-02-07 Nec Corp Solid-state imaging device
JP2006049636A (en) * 2004-08-05 2006-02-16 Matsushita Electric Ind Co Ltd Solid state imaging apparatus and manufacturing method thereof
WO2008065963A1 (en) * 2006-11-28 2008-06-05 Toppan Printing Co., Ltd. Solid-state imaging device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206429A (en) * 1992-01-27 1993-08-13 Toshiba Corp Colored microlens array and its manufacture
JPH0738075A (en) * 1993-07-23 1995-02-07 Nec Corp Solid-state imaging device
JP2006049636A (en) * 2004-08-05 2006-02-16 Matsushita Electric Ind Co Ltd Solid state imaging apparatus and manufacturing method thereof
WO2008065963A1 (en) * 2006-11-28 2008-06-05 Toppan Printing Co., Ltd. Solid-state imaging device and method for manufacturing the same
JP2008135551A (en) * 2006-11-28 2008-06-12 Toppan Printing Co Ltd Solid-state image sensing device
US8030115B2 (en) 2006-11-28 2011-10-04 Toppan Printing Co., Ltd. Solid-state image pickup device with color filter and method of manufacturing the same

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