JPH0320733A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPH0320733A JPH0320733A JP1155397A JP15539789A JPH0320733A JP H0320733 A JPH0320733 A JP H0320733A JP 1155397 A JP1155397 A JP 1155397A JP 15539789 A JP15539789 A JP 15539789A JP H0320733 A JPH0320733 A JP H0320733A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photomask
- pattern
- lens
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体基板に、少なない露光量でコンタクト
ホールパターンを形戊させるホトマスクに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a photomask for forming a contact hole pattern in a semiconductor substrate with a small amount of exposure.
従来の技術
近年、半導体素子とりわけMOS型トランジスタの開発
が進み、その重要性がます壕す高くなってきているが、
この需要に応えるには、かなり高い生産力が必要となっ
てきている。現在、MOS型トランジスタを形或する上
で、異なる2つの導電層を電気的に接続する場合、コン
タクトホーpを形成させる。以下に、従来のコンタクト
ホール形或用ホトマスクについて説明する。Conventional technology In recent years, the development of semiconductor devices, especially MOS transistors, has progressed, and their importance has become even more important.
In order to meet this demand, considerably high production capacity is required. Currently, when forming a MOS transistor and electrically connecting two different conductive layers, a contact hole P is formed. A conventional contact hole type photomask will be explained below.
第2図は、従来のコンタクトホール形或用ホトマスクを
示すものである。第2図において、1はガラヌ基板で、
2ぱ遮光膜である。3は光源光で、4は露光光である。FIG. 2 shows a conventional contact hole type photomask. In Figure 2, 1 is a Galanu substrate;
2. It is a light shielding film. 3 is a light source light, and 4 is an exposure light.
以上のように構或されたホトマスクについて、以下その
動作について説明する。The operation of the photomask constructed as described above will be explained below.
!ず、ガラス基板1に光源光3をあてると、遮光膜2を
蒸着していない部分のみ、露光光4として垂直に透過す
る。! First, when the light source light 3 is applied to the glass substrate 1, only the portion where the light shielding film 2 is not deposited is vertically transmitted as exposure light 4.
発明が解決しようとする課題
しかしながら、上記従来の構或では平坦なホトマスクを
用いて露光を行っているため、光源光が、ガラス基板を
垂直に透過し、露光光となっていたので、コンタクトホ
ールのイメージ露光量は、遮光パターンエッジからの光
の回折の影響で、光のコントラストが低下しラインパタ
ーンに比べて多く必要となり、スループットが低下する
とーう問題があった。Problems to be Solved by the Invention However, in the conventional structure described above, exposure is performed using a flat photomask, and the light source light passes through the glass substrate perpendicularly and becomes exposure light. Due to the influence of light diffraction from the edges of the light-shielding pattern, the image exposure amount required is larger than that for a line pattern due to a decrease in the contrast of light, resulting in a reduction in throughput.
本発明は、上記従来の課題を解決するもので、少ないN
光量でコンタクトホールパターンヲ形戊することのでき
るホトマスクを提供することを目的とする。The present invention solves the above-mentioned conventional problems, and reduces the number of N
An object of the present invention is to provide a photomask that can shape a contact hole pattern depending on the amount of light.
課題を解決するための手段
この目的を達或するために本発明のホトマスクは、コン
タクトホールパターン部分のガラヌ部ヲレンズ状とし、
その他のパターン面に遮光膜を備えている。Means for Solving the Problems In order to achieve this object, the photomask of the present invention has a contact hole pattern portion having a lenticular shape,
A light-shielding film is provided on the other pattern surfaces.
作 用
この構或によって、ホトマスク上のコンタクトホーノレ
部分に対して、広角から集光するために、露光光のエネ
ノレギーが増え露光時間を短縮することができ、スルー
プットを上げることができる。Function: With this structure, since light is focused from a wide angle onto the contact hole portion on the photomask, the energy of the exposure light increases, the exposure time can be shortened, and the throughput can be increased.
実施例
以下本発明の実施例について、図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
第1図は、本発明の一実施例におけるホトマスクの断面
図を示すものである。第1図に釦いて、5はガラス面上
のコンタクトホール部を凸レンズ状としたガラス面上凸
レンズ、6はパタムン面上のコンタクトホール部を凹レ
ンズ状としたパターン面上凹レンズである。なお1ぱガ
ラス基板、2ぱ遮光膜、3は光源光、4ぱ露光光で、こ
れらは従来例の構戊と同じである。FIG. 1 shows a cross-sectional view of a photomask in one embodiment of the present invention. Referring to FIG. 1, 5 is a convex lens on the glass surface in which the contact hole portion on the glass surface is shaped like a convex lens, and 6 is a concave lens on the pattern surface in which the contact hole portion on the patterned surface is in the shape of a concave lens. Note that 1 is a glass substrate, 2 is a light-shielding film, 3 is a light source, and 4 is exposure light, which are the same as the conventional structure.
以上のように構或されたホトマスクについて、以下その
動作を説明する。The operation of the photomask constructed as described above will be explained below.
1ず、ホトマスクのガラス面上凸レンズ6の部分に照射
された平面波の光源光3が、凸レンズ形状により、ここ
で屈折し、凹型波面として、パターン面上凹レンズ6に
向かって集光される。この集光された凹型波面が、パタ
ーン面上凹レンズ形状のために屈折し、平面波の露光光
4として、ウエハ上に照射される。First, the plane wave light source light 3 irradiated onto the convex lens 6 on the glass surface of the photomask is refracted by the convex lens shape, and is focused as a concave wavefront toward the concave lens 6 on the pattern surface. This condensed wavefront is refracted due to the concave lens shape on the pattern surface, and is irradiated onto the wafer as plane wave exposure light 4.
以上のように本実施例によれば、ホトマスクのコンタク
トホーp部分のガラス面上に凸レンズ部、パターン面上
に凹レンズ部を設けることにより、広角から光源光を集
光することができるので、少ない露光量でコンタクトホ
ールパターンを形或させることができ、また、ホトマス
ク上のパーティクルの影響を受けにくい。As described above, according to this embodiment, by providing a convex lens section on the glass surface of the contact hope portion of the photomask and a concave lens section on the pattern surface, it is possible to condense the light source light from a wide angle. The contact hole pattern can be shaped depending on the amount of exposure, and it is not easily affected by particles on the photomask.
発明の効果
以上のように本発明は、ホトマスクのコンタクトホール
部分のガラス面に凸レンズ、パターン面に凹レンズを設
けることにより、露光時間を短縮し、スループットを上
げることができるため、工業的価値がきわめて高いホト
マスクを実現することができるものである。Effects of the Invention As described above, the present invention has extremely high industrial value because it can shorten exposure time and increase throughput by providing a convex lens on the glass surface of the contact hole portion of a photomask and a concave lens on the pattern surface. This makes it possible to realize a high-performance photomask.
第1図は本発明の一実施例におけるホトマスクの断面図
、第2図は従来のホトマスクの断面図である。
1・・・・・・ガフヌ基板、2・・・・・・遮光膜、3
・・・・・・光源光、4・・・・・・露光光、5・・・
・・・ガラヌ面上凸レンズ、6・・・・・・パターン面
上凹レンズ。FIG. 1 is a sectional view of a photomask according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional photomask. 1... Gafnu substrate, 2... Light shielding film, 3
...Light source light, 4...Exposure light, 5...
... Convex lens on the Galanu surface, 6... Concave lens on the pattern surface.
Claims (1)
とし、その他のパターン面に遮光膜を備えたことを特徴
とするホトマスク。A photomask characterized in that the glass portion of the contact hole pattern portion is lens-shaped, and the other pattern surfaces are provided with a light-shielding film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1155397A JPH0320733A (en) | 1989-06-16 | 1989-06-16 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1155397A JPH0320733A (en) | 1989-06-16 | 1989-06-16 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0320733A true JPH0320733A (en) | 1991-01-29 |
Family
ID=15605070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1155397A Pending JPH0320733A (en) | 1989-06-16 | 1989-06-16 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0320733A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441836A (en) * | 1994-03-30 | 1995-08-15 | International Business Machines Corporation | Laser ablation mask repair method |
US5441835A (en) * | 1991-03-27 | 1995-08-15 | Sharp Kabushiki Kaisha | Photomask and projection exposure mechanism using the same |
JP2009116268A (en) * | 2007-11-09 | 2009-05-28 | V Technology Co Ltd | Photomask and method for forming convex pattern using the same |
WO2010047362A1 (en) * | 2008-10-24 | 2010-04-29 | 株式会社ブイ・テクノロジー | Exposure apparatus and photomask |
WO2011052060A1 (en) * | 2009-10-29 | 2011-05-05 | 株式会社ブイ・テクノロジー | Exposure device and photo mask |
WO2011058634A1 (en) * | 2009-11-12 | 2011-05-19 | 株式会社ブイ・テクノロジー | Exposure apparatus and photomask used therein |
WO2012017808A1 (en) * | 2010-08-06 | 2012-02-09 | 株式会社ブイ・テクノロジー | Microlens exposure device |
CN108919602A (en) * | 2018-08-01 | 2018-11-30 | 京东方科技集团股份有限公司 | Mask plate and preparation method thereof, array substrate and preparation method thereof |
US10969677B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
-
1989
- 1989-06-16 JP JP1155397A patent/JPH0320733A/en active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441835A (en) * | 1991-03-27 | 1995-08-15 | Sharp Kabushiki Kaisha | Photomask and projection exposure mechanism using the same |
US5441836A (en) * | 1994-03-30 | 1995-08-15 | International Business Machines Corporation | Laser ablation mask repair method |
JP2009116268A (en) * | 2007-11-09 | 2009-05-28 | V Technology Co Ltd | Photomask and method for forming convex pattern using the same |
US8854600B2 (en) | 2008-10-24 | 2014-10-07 | V Technology Co., Ltd. | Exposure apparatus and photomask |
WO2010047362A1 (en) * | 2008-10-24 | 2010-04-29 | 株式会社ブイ・テクノロジー | Exposure apparatus and photomask |
JP2010102149A (en) * | 2008-10-24 | 2010-05-06 | V Technology Co Ltd | Exposure apparatus and photomask |
WO2011052060A1 (en) * | 2009-10-29 | 2011-05-05 | 株式会社ブイ・テクノロジー | Exposure device and photo mask |
WO2011058634A1 (en) * | 2009-11-12 | 2011-05-19 | 株式会社ブイ・テクノロジー | Exposure apparatus and photomask used therein |
US9030646B2 (en) | 2009-11-12 | 2015-05-12 | V Technology Co., Ltd. | Exposure apparatus and photomask used therein |
JP2012038927A (en) * | 2010-08-06 | 2012-02-23 | V Technology Co Ltd | Microlens exposure device |
WO2012017808A1 (en) * | 2010-08-06 | 2012-02-09 | 株式会社ブイ・テクノロジー | Microlens exposure device |
US9429852B2 (en) | 2010-08-06 | 2016-08-30 | V Technology Co., Ltd. | Microlens exposure system |
US10969677B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
CN108919602A (en) * | 2018-08-01 | 2018-11-30 | 京东方科技集团股份有限公司 | Mask plate and preparation method thereof, array substrate and preparation method thereof |
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