JPS62119059A - Thermal head - Google Patents

Thermal head

Info

Publication number
JPS62119059A
JPS62119059A JP60258468A JP25846885A JPS62119059A JP S62119059 A JPS62119059 A JP S62119059A JP 60258468 A JP60258468 A JP 60258468A JP 25846885 A JP25846885 A JP 25846885A JP S62119059 A JPS62119059 A JP S62119059A
Authority
JP
Japan
Prior art keywords
common electrodes
film conductor
thermal head
substrate
thick film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60258468A
Other languages
Japanese (ja)
Inventor
Toshio Matsuzaki
松崎 壽夫
Haruo Tanmachi
東夫 反町
Takumi Suzuki
工 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60258468A priority Critical patent/JPS62119059A/en
Publication of JPS62119059A publication Critical patent/JPS62119059A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Facsimile Heads (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To obtain a thermal head of low cost, high accuracy, and small size, by a method wherein a thick film conductor is disposed under a plurality of common electrodes as a connecting electrode connecting the common electrodes of opposite side to those connected to an integrated circuit for driving heating resistors, and the connecting electrode and the common electrodes are connected to each other through openings formed in an insulator. CONSTITUTION:After a high-temperature insulating glazed layer 2 is formed using an insulating substrate 1 of alumina, common electrodes 3 of negative side, common electrodes 4 of positive side, ad required crossunder electrodes are formed out of a thick film conductor of copper. Thereafter, a crystalline glass layer 6 provided with through-holes 5 is formed, and a non-crystalline glass layer 7 is formed in order to enhance a surface smoothness and properties of forming an upper thin film pattern. After the substrate is cleaned, a thin film conductor 8 is formed by depositing Ta2N/ NiCr/Au/Cr in this order all over the substrate. After the thin film conductor 8 is patterned, a protective layer 9 consisting of SiO2/Ta2O5.SiO2 is formed thereon. After a protective resin 10 is formed by printing, the Cr in a bonding pad portion is removed by etching and Au-plating is applied thereon. Thereafter, a drive IC 11 is installed and wire-bonded, and a semiconductor protective layer 13 is formed.

Description

【発明の詳細な説明】 〔発明の概要〕 本発明は各小共通電極を結ぶ大共通電極としてガラス絶
縁体下部の厚膜導体を使用する特にセンタータイプの高
密度サーマルヘッドを提供する。
DETAILED DESCRIPTION OF THE INVENTION [Summary of the Invention] The present invention provides a high-density thermal head, particularly of the center type, which uses a thick film conductor under a glass insulator as a large common electrode connecting each small common electrode.

〔産業上の利用分野〕[Industrial application field]

本発明はサーマルヘッドに係り、特に厚膜導体と薄膜抵
抗体を同一基板上に形成した多層配線を用いたドライバ
ーIC搭載型サーマルヘッドに関する。
The present invention relates to a thermal head, and particularly to a driver IC-mounted thermal head using multilayer wiring in which a thick film conductor and a thin film resistor are formed on the same substrate.

〔従来の技術と問題点〕[Conventional technology and problems]

感熱式プリンタの記録部であるサーマルヘッドは発熱抵
抗体、リード線及び基板からなる。
The thermal head, which is the recording section of a thermal printer, consists of a heating resistor, a lead wire, and a substrate.

ドライバーICを搭載したドライバーIC搭載型サーマ
ルヘッドはIC内部に多層配線の一部を含ませる効果が
あるために高密度なヘッドを比較的容易に実現すること
ができる。
A driver IC-mounted thermal head equipped with a driver IC has the effect of including part of the multilayer wiring inside the IC, so that a high-density head can be realized relatively easily.

このようなバライバーIC搭載型す−マルヘフドは従来
第5図に示すように発熱抵抗体列に対向するようにドラ
イバーICが配置される。このような配置は(ビット数
)が10本/ m m程度のサーマルヘッドにならIC
の配列及びパターン配線等に無理なく適用できる。しか
しながら(ビット数)が10本/ m mを超えると発
熱抵抗体列をはさんでICを両側に配置するのが一般的
である。
Conventionally, in such a varibar IC mounted type smartphone, a driver IC is arranged so as to face a row of heating resistors, as shown in FIG. This kind of arrangement is suitable for a thermal head with a bit count of about 10/mm.
It can be easily applied to arrays and pattern wiring, etc. However, when the number of bits exceeds 10/mm, it is common to place ICs on both sides of the heating resistor array.

この場合、発熱抵抗体の小共通電極は接続されるICの
ビット数ごとに連続的に形成される。またICのそれぞ
れの共通電極同志も接続されている必要がある。このI
Cの共通電極同志の接続は図に示すように隣の発熱抵抗
接続電極があるために容易ではないが従来この隣の発熱
抵抗体(リード線)列をクロスオーバーするために絶縁
被覆線を用いた半田付けによったり、また特に薄膜形サ
ーマルヘッドの場合は該発熱抵抗体列上にスルーホール
を設けた例えばポリイミド等の絶縁樹脂層を形成しその
上部にICの共通電極となる薄膜を形成したりしていた
In this case, the small common electrodes of the heating resistors are formed successively for each number of bits of the IC to be connected. Further, the common electrodes of each IC must also be connected to each other. This I
As shown in the figure, it is not easy to connect the common electrodes of C to each other because there is an adjacent heating resistor connection electrode, but conventionally an insulated wire is used to cross over the adjacent heating resistor (lead wire) row. In the case of a thin-film thermal head, an insulating resin layer made of polyimide or the like is formed with through holes on the heating resistor array, and a thin film that becomes the common electrode of the IC is formed on top of the insulating resin layer. I was doing things like that.

上記絶縁被覆線の半田付けによって発熱抵抗体列をクロ
スオーバーする場合は作業性が悪くかつ半田付は時フラ
ックス等によるポンディングパッドへの汚染等が問題と
なる。一方ポリイミド等の樹脂層を形成して共通電極用
薄膜を形成する場合、薄膜形成工程が一工程増加しコス
ト高となる問題があった。
When the heating resistor array is crossed over by soldering the insulated wire, the workability is poor, and the soldering poses problems such as contamination of the bonding pads by flux and the like. On the other hand, when forming a thin film for a common electrode by forming a resin layer such as polyimide, there is a problem that the thin film forming process increases by one step, resulting in high cost.

本発明は上記問題点を解決した高密度サーマルヘッドを
提供することを目的とする。
An object of the present invention is to provide a high-density thermal head that solves the above problems.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は本発明によれば、基板上に絶縁体を介して
発熱抵抗体列を配設し、該発熱抵抗体列の両側に抵抗体
駆動用集積回路を実装してなるサーマルヘッドにおいて
、 該発熱抵抗体駆動用の集積回路に接続される側の反対側
の複数の共通電極を接続する接続電極として該複数の共
通電極の下部に厚膜導体を配設し、該接続電極と該複数
の共通電極とは前記絶縁体に形成された開口を介して接
続されていることを特徴とするサーマルヘッドによって
解決される。
According to the present invention, the above problem is solved in a thermal head in which a heat generating resistor array is arranged on a substrate via an insulator, and resistor driving integrated circuits are mounted on both sides of the heat generating resistor array. A thick film conductor is disposed below the plurality of common electrodes as a connection electrode for connecting the plurality of common electrodes on the side opposite to the side connected to the integrated circuit for driving the heating resistor, and the connection electrode and the plurality of common electrodes are connected to each other. The thermal head is connected to the common electrode through an opening formed in the insulator.

〔実施例〕〔Example〕

以下本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.

第1図は本発明の一実施例を説明するための平面図であ
り、第2図は第1図のA−A ’部所面図である。
FIG. 1 is a plan view for explaining one embodiment of the present invention, and FIG. 2 is a plan view of the section AA' in FIG.

純度97%のアルミナからなる絶縁基板1を用い、軟化
温度が750℃以上の高温断熱グレーズ層(ガラス層)
2を形成した後、銅からなる厚膜導体により一側の共通
電極3+側の共通電極4と、図示していない必要クロス
アンダ−電極を形成する。
Using an insulating substrate 1 made of alumina with a purity of 97%, a high-temperature insulating glaze layer (glass layer) with a softening temperature of 750°C or higher
After forming the common electrode 2, a common electrode 4 on one side of the common electrode 3+ and a necessary cross-under electrode (not shown) are formed using a thick film conductor made of copper.

次に、スルーホール5を設けた、結晶質ガラス層6を形
成する。
Next, a crystalline glass layer 6 provided with through holes 5 is formed.

次いで、表面平滑性を向上し上部の薄膜パターン形成性
を向上させるために非結晶ガラスN7を形成した。基板
洗浄後基板全面に薄膜導体8をTaJ/NiCr/Au
/Crの順にそれぞれ、300人/300人15000
人/300人の厚さに蒸着形成した。次いで該薄膜導体
8をフォトリソ法によって各パターン形成した後、Si
ng/Tag’s  ・5iOzからなる保護膜9をR
Fスパッタリング法によって形成した。
Next, amorphous glass N7 was formed to improve surface smoothness and formability of an upper thin film pattern. After cleaning the substrate, a thin film conductor 8 of TaJ/NiCr/Au is applied to the entire surface of the substrate.
/Cr respectively 300 people/300 people 15000
It was formed by vapor deposition to a thickness of 300 people/300 people. Next, after forming each pattern on the thin film conductor 8 by photolithography, Si
R the protective film 9 consisting of ng/Tag's 5iOz
It was formed by F sputtering method.

保護樹脂10を印刷形成した後、ポンディングパッド部
のCrをエツチング除去し、Auめっきをほどこした。
After printing and forming the protective resin 10, Cr on the bonding pad portion was removed by etching, and Au plating was applied.

次いで、駆動ICIIを搭載しワイヤボンディングし、
半導体保護樹脂13を形成した後中央抵抗タイプの16
本/mmIC搭載形サーマルヘフド基板が完成した。2
2は発熱抵抗体である。
Next, the drive ICII is mounted and wire bonded,
After forming the semiconductor protection resin 13, the central resistor type 16
A thermal hefed board equipped with a book/mm IC has been completed. 2
2 is a heating resistor.

第2図に示した結晶質と非晶質の厚膜ガラス絶縁体は絶
熱グレーズ部以外の全面に形成してもよい。
The crystalline and amorphous thick film glass insulators shown in FIG. 2 may be formed on the entire surface other than the insulating glaze.

第3図は結晶質ガラス層6と非晶質ガラス層7の2つの
層が断熱グレーズ部以外に全面に形成されている例を示
し、第4図は非晶質ガラス層7が断熱グレーズ部以外の
全面に形成されている例である。
FIG. 3 shows an example in which two layers, a crystalline glass layer 6 and an amorphous glass layer 7, are formed on the entire surface other than the heat insulating glaze part, and FIG. 4 shows an example in which the amorphous glass layer 7 is formed in the heat insulating glaze part. This is an example in which it is formed on the entire surface other than the

このように絶縁体の機能としては不要な部分にもガラス
層を形成し、下部のアルミナ絶縁基板1の表面粗さを改
良しパターン形成性改善に寄与する。
In this way, a glass layer is formed even in areas that are unnecessary for the function of an insulator, improving the surface roughness of the lower alumina insulating substrate 1 and contributing to improved pattern formability.

また、下部厚膜導体は、銅に限らず、金、銀、バラジウ
ンム、白金等を主成分とした導体が使用できる。
Furthermore, the lower thick film conductor is not limited to copper, and conductors whose main components are gold, silver, baradium, platinum, etc. can be used.

さらに、上部抵抗体及び導体薄膜は、TatN/NiC
r/Au/Crに限らず、Ta−八1 、Ta−5tな
どの抵抗体や、AA! 、Cu、Cr、W、Mo等の単
層または、多層膜を使用することができる。
Furthermore, the upper resistor and conductor thin film are made of TatN/NiC
Not limited to r/Au/Cr, resistors such as Ta-81, Ta-5t, and AA! , Cu, Cr, W, Mo, or the like can be used as a single layer or a multilayer film.

また、厚膜導体に銅を使用した場合、その露出部の保護
のため、薄膜形成前に、銅表面にNi等のめっきをほど
こしても良い。
Further, when copper is used for the thick film conductor, the copper surface may be plated with Ni or the like before forming the thin film to protect the exposed portion.

更に本発明では第4A図及び第4B図に示されるように
例えば絶縁基板1とグレーズ層2間に共通電極4を形さ
せることは共通電極の抵抗値を低下させ、サーマルヘッ
ドをより小型化する上でも好ましい。30は接着用ガラ
スである。
Furthermore, in the present invention, forming the common electrode 4 between the insulating substrate 1 and the glaze layer 2, for example, as shown in FIGS. 4A and 4B, reduces the resistance value of the common electrode and makes the thermal head more compact. The above is also preferred. 30 is adhesive glass.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、安価でしかも高密
度、小型のサーマルヘッドを得ることができる。
As explained above, according to the present invention, it is possible to obtain an inexpensive, high-density, and compact thermal head.

【図面の簡単な説明】[Brief explanation of drawings]

第1A図は本発明の一実施例を説明するための平面図で
あり、第1B図は第1図のA−A ’部断面図であり、
第2図及び第3図は基板上にガラス層を形成する方法を
示す断面図であり、第4A図及び第4B図は基板と断熱
グレーズ層との間に配設された厚膜導体を示した概略断
面図であり、第5図は従来例を説明するための平面図で
ある。 1・・・絶縁基板、    2・・・断熱グレーズ層、
3・・・−側共通電極(厚膜導体)、 4・・・+側共通電極(厚膜導体)、 5・・・スルーホール、  6・・・結晶質ガラス層、
7・・・非晶質ガラス層、8・・・薄膜導体、9・・・
保護膜、    10・・・保護樹脂、11・・・駆動
IC113・・・半導体保護樹脂、30・・・接着用ガ
ラス。 朗3@ 従来例 嬶5@
FIG. 1A is a plan view for explaining one embodiment of the present invention, and FIG. 1B is a sectional view taken along the line AA' in FIG.
2 and 3 are cross-sectional views showing a method of forming a glass layer on a substrate, and FIGS. 4A and 4B show a thick film conductor disposed between a substrate and an insulating glaze layer. FIG. 5 is a plan view for explaining a conventional example. 1... Insulating substrate, 2... Heat insulating glaze layer,
3... - side common electrode (thick film conductor), 4... + side common electrode (thick film conductor), 5... through hole, 6... crystalline glass layer,
7... Amorphous glass layer, 8... Thin film conductor, 9...
Protective film, 10... Protective resin, 11... Drive IC113... Semiconductor protective resin, 30... Adhesive glass. Ro 3 @ Conventional example 5 @

Claims (1)

【特許請求の範囲】 1、基板上に絶縁体を介して発熱抵抗体列を配設し、該
発熱抵抗体列の両側に抵抗体駆動用集積回路を実装して
なるサーマルヘッドにおいて、該発熱抵抗体駆動用の集
積回路に接続される側の反対側の複数の共通電極を接続
する接続電極として該複数の共通電極の下部に厚膜導体
を配設し、該接続電極と該複数の共通電極とは前記絶縁
体に形成された開口を介して接続されていることを特徴
とするサーマルヘッド。 2、前記厚膜導体が銅、金、銀、パラジウム、白金の群
から選択される特許請求の範囲第1項記載のサーマルヘ
ッド。 3、前記厚膜導体が前記基板と絶縁体の間に配設される
特許請求の範囲第1項記載のサーマルヘッド。 4、前記絶縁体が結晶質ガラスである特許請求の範囲第
1項記載のサーマルヘッド。 5、前記絶縁体が結晶質ガラスと非晶質ガラスの2層か
らなる特許請求の範囲第1項記載のサーマルヘッド。
[Claims] 1. A thermal head in which a row of heat generating resistors is disposed on a substrate with an insulator interposed therebetween, and integrated circuits for driving the resistors are mounted on both sides of the row of heat generating resistors. A thick film conductor is disposed below the plurality of common electrodes as a connection electrode for connecting the plurality of common electrodes on the opposite side to the side connected to the integrated circuit for driving the resistor, and a thick film conductor is disposed under the plurality of common electrodes, and A thermal head characterized in that the electrode is connected to the electrode through an opening formed in the insulator. 2. The thermal head according to claim 1, wherein the thick film conductor is selected from the group of copper, gold, silver, palladium, and platinum. 3. The thermal head according to claim 1, wherein the thick film conductor is disposed between the substrate and the insulator. 4. The thermal head according to claim 1, wherein the insulator is crystalline glass. 5. The thermal head according to claim 1, wherein the insulator comprises two layers of crystalline glass and amorphous glass.
JP60258468A 1985-11-20 1985-11-20 Thermal head Pending JPS62119059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60258468A JPS62119059A (en) 1985-11-20 1985-11-20 Thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60258468A JPS62119059A (en) 1985-11-20 1985-11-20 Thermal head

Publications (1)

Publication Number Publication Date
JPS62119059A true JPS62119059A (en) 1987-05-30

Family

ID=17320645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60258468A Pending JPS62119059A (en) 1985-11-20 1985-11-20 Thermal head

Country Status (1)

Country Link
JP (1) JPS62119059A (en)

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