JPS62119006A - Method of cutting single crystal - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field to Which the Invention Pertains] The present invention relates to a method for cutting a single crystal, and more particularly to a method for cutting a single crystal while fixing it to a co-cutting plate.

[Conventional technology]

When cutting a single crystal, the single crystal to be cut is adhesively fixed to a co-cutting plate to hold it, and the co-cutting plate is fixed to a fixing device of a cutting machine. Afterwards, the crystal and co-cutting plate are cut to obtain the desired shape. At this time, depending on the shape of the crystal co-cutting plate, there are parts where the crystal and the co-cutting plate are cut at the same time.

For example, as shown in FIG. 1, a cylindrical single crystal 1 grown by the Czochralski method or the like is placed on a cutting plate 2 having a recess that fits into the cylindrical surface with an adhesive layer 3 interposed therebetween. Fix with adhesive. The co-cutting plate 2 is made of a material such as ceramic, gypsum, graphite, or glass, which is generally different from crystal.

For example, when the cutting blade 4, which has an inner peripheral edge shape, is initially brought into contact with the single crystal 1 from above and starts cutting (position 1 in the figure), only the crystal is cut; When it goes down to the middle position, the co-cutting plate and the crystal will be cut at the same time.

In this position, the cutting blade may wobble (due to simultaneous cutting of different materials with different cutting resistances), and cutting debris may not be removed smoothly. As a result, the accuracy of the shaded area 5 in the figure deteriorates and saw marks also occur. Therefore, after cutting, there is the inconvenience that defective parts such as saw marks have to be shaped separately, which causes problems such as cutting accuracy and maintaining the desired shape become difficult, and product yield is reduced. was.

[Problems to be solved by the invention]

The present invention has been made in order to solve the conventional problems and provide a method for cutting a single crystal, which improves the cutting precision of the single crystal and maintains a desired shape.

That is, the method for cutting a single crystal provided by the present invention is as follows:
The method is characterized in that an adhesive containing hard particles is used to bond the crystal and co-cutting plate when cutting the single crystal.

[Specific explanation and examples of the structure and effects of the invention] According to the method of the present invention, for example, during a cutting operation as shown in FIG. 1, the cutting blade 4 is subjected to a sharpening action by hard particles. It turns out. Therefore, when the single crystal 1 and the co-cutting plate 2 are cut at the same time, the cutting blade 4 is in a state where it can cut without being subjected to the sharpening action, and even the shaded area in the figure can be cut with high precision.

The adhesive used in the present invention contains hard particles, but there are no particular restrictions on the type of component that has an adhesive effect.

For example, commonly used wax-based products.

- Adhesives or adhesive compositions such as liquid curable resins and two-component curable resins can be used. In particular, St.

When cutting a single crystal with low mechanical strength such as LiNbO3, it is possible to easily peel it off chemically, have a certain degree of hardness during adhesion, or prepare it in advance by mixing it with hard particles. For reasons υ, it is preferable to use a wax-based adhesive.

The amount of hard particles to be blended is not particularly limited, and may be blended as appropriate depending on the cutting situation, and can be selected within a range of approximately 0.1 to 1 times the weight of the component having adhesive action. For example, when using the wax adhesive described above, the optimum blending amount is 10 to 50% by weight. If the amount is less than 10% by weight, the cutting accuracy will not be very good because the sharpening effect will be small.

If it exceeds 50% by weight, the sharpening effect is sufficient, but the adhesive strength as an adhesive becomes weak, and as the cutting progresses, the crystals may shake or the crystals may be thrown away from the co-cutting plate after cutting is completed. I don't like it.

The hard particles used in the present invention are fixed abrasive type cutting blades,
For example, any particle having a hardness of 9 or higher on the Mohs scale that is used as a dressing material for an internal or external diamond blade may be used. For example, inorganic particles such as fused alumina particles, silicon carbide particles, and diamond particles may be used. It will be done.

Among these, fused alumina particles and silicon carbide particles are generally used as abrasives, and particles with moderate diameters are available, and particle diameters can be selected from a wide range, so they are preferable. .

The shape of the hard particles is preferably one with a particle size of about 20 μm in view of the effect of mixing into the adhesive and the sharpening effect.

The method of the present invention is suitable for cutting single crystals such as St, LiNbO3, etc. with high precision using a co-cutting plate),
As the cutting means in this case, for example, a fixed abrasive type outer peripheral blade or inner peripheral blade cutting machine, a free abrasive type wire or blade cutting machine, etc. are used.

Examples are shown below.

Example 1 Using the cutting method shown in FIG. 1, a silicon single crystal with a diameter of 3 inches was adhered to a co-cut plaster plate.

The adhesive used was wax mixed with 30% by weight of molten alumina. This silicone was cut using an internal blade cutting machine. The thickness of 100 pieces of cut silicon is 11.12,1 in Figure 1.
Measurements were made for each of the 3.14 sites.

As a result, the average thickness and standard deviation of each part are shown in Table 1.

Table 1 From Table 1, there is no difference in thickness between each cut site at a significance level of 5.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram for explaining the state of cutting a single crystal using a co-cutting plate. 1... Single crystal, 2... Co-cut plate, 3... Adhesive layer,
4... Cutting blade, 11, 12.13, 14... Cutting site.

Claims (5)

[Claims] (1) A method for cutting a single crystal, which comprises using an adhesive containing hard particles to bond the crystal and co-cutting plate when cutting the single crystal. (2) The method for cutting a single crystal according to claim (1), wherein the adhesive is a wax-based adhesive. (3) A method for cutting a single crystal according to claim (1) or (2), using an adhesive having a hard particle content of 10 to 50% by weight. (4) The method for cutting a single crystal according to any one of claims (1) to (3), wherein the hard particles are fused alumina particles. (5) The method for cutting a single crystal according to any one of claims (1) to (3), wherein the hard particles are silicon carbide particles.