JPS63317305A - Cutting method for base - Google Patents

Cutting method for base

Info

Publication number
JPS63317305A
JPS63317305A JP15515787A JP15515787A JPS63317305A JP S63317305 A JPS63317305 A JP S63317305A JP 15515787 A JP15515787 A JP 15515787A JP 15515787 A JP15515787 A JP 15515787A JP S63317305 A JPS63317305 A JP S63317305A
Authority
JP
Japan
Prior art keywords
base
cutting
crystal
filling agent
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15515787A
Other languages
Japanese (ja)
Inventor
Hiroshi Sato
弘 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15515787A priority Critical patent/JPS63317305A/en
Publication of JPS63317305A publication Critical patent/JPS63317305A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/04Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

PURPOSE:To protect an end section of base from chipping at the time of cutting a base, and make a post-work of removing cut pieces constituting the base section only at the time of cutting by coating the base with a filling agent, to a carrier and cutting the base together with the carrier and the filling agent or with the filling agent. CONSTITUTION:For example, a pipe-shaped carrier into 1 which, for example, an indeterminate crystal base 2 is inserted, and a space between the carrier 1 and a crystal 2 is filled by pouring a fluidizing filling agent 3 therein, and the crystal 2 is bonded with the carrier 1 by curing said filling agent 3. After being fixed, the crystal 2 is cut together with the carrier 1 and a filling agent by a blade 4 of a cutter. Chipping at the time of cutting can be prevented by fixing the whole periphery of the base 2 with the tilling agent 3. Said fixing can be carried out by pouring in and curing the filling agent 3, and as the base is fixed with a thin bonding layer, a support to be processed in accordance with the base shape can be eliminated. Also, the base 2 is fixed with the whole outer periphery, the filling agent 3 of weak bonding power to be peeled off easily can be selected for use.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、シリコンStやガリウム・ヒ素GaAsの半
導体基体やその他の結晶基体の切断を定形、不定形基体
を問わず容易に行えるようにした基体の切断方法に関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention makes it possible to easily cut silicon St, gallium arsenide GaAs semiconductor substrates, and other crystalline substrates, regardless of whether they are regular or amorphous substrates. This invention relates to a method for cutting a substrate.

[発明の概要] 本発明は、定形基体または不定形基体の切断方法におい
て、 基体を充填剤で被覆し硬化させて支持体に固定した後、
支持体と充填剤ごとまたは充填剤ごと基体を切断して基
体の形状に合わせた支持台を不要とし、切断片の取り出
しおよびカス等の除去・洗浄を容易にするとともに、切
断時において基体の縁部の全周を固定することにより、 あらゆる基体の形状に短時間の準備作業で対応できるよ
うにするとともに、切断時には基体の縁部のチッピング
を防止し、切断後の後作業を容易にしたものである。
[Summary of the Invention] The present invention provides a method for cutting a regular or amorphous base, in which the base is coated with a filler, cured, and fixed to a support.
Cutting the substrate together with the support and filler or the filler eliminates the need for a support base that matches the shape of the substrate, making it easier to take out cut pieces and remove and clean debris, etc. By fixing the entire circumference of the part, it is possible to adapt to any shape of substrate with a short preparation time, and also prevents chipping of the edge of the substrate during cutting, making post-cutting work easier. It is.

[従来の技術] 従来より、ウェハの製造工程においては、スライシング
マシンによって円筒状の結晶等を薄い円板状に切断する
ことが行われている。
[Prior Art] Conventionally, in a wafer manufacturing process, a slicing machine has been used to cut a cylindrical crystal or the like into thin disk shapes.

通常スライシングマシン(切断機)は、内周刃式(ドー
ナツプレート)が多く使われているが、この場合ワーク
(ウェハ)の落下、飛散を防ぎながら結晶部分を完全に
切断するために、切断用の枕となる例えばカーボン台等
の支持台を接着させて行っている。
Normally, slicing machines (cutting machines) often use an internal blade type (doughnut plate), but in this case, in order to completely cut the crystal part while preventing the workpiece (wafer) from falling or scattering, the cutting machine This is done by adhering a support base such as a carbon base to serve as a pillow.

第2図(イ)、(ロ)は結晶を切断する従来方法の説明
図であり、(イ)は側面の断面図、(ロ)は正面図であ
る。結晶+00は、支持台lotへ接着剤102により
接着される。これを切断機にセットしプレート103を
回転させ、刃先に電着されているダイヤモンド粒子+0
4により、結晶を一枚づつ点線Aの如くウェハに切断す
る。この様にして切断された結晶は、その後、接着剤1
02を溶解除去しウェハとして完成する。
FIGS. 2(a) and 2(b) are explanatory diagrams of a conventional method of cutting a crystal, in which (a) is a side sectional view and (b) is a front view. Crystal +00 is adhered to the support lot by adhesive 102. Set this in a cutting machine and rotate the plate 103, diamond particles electrodeposited on the cutting edge +0
4, the crystals are cut into wafers one by one as shown by dotted line A. The crystals cut in this way are then coated with adhesive 1.
02 is dissolved and removed to complete a wafer.

L発明が解決しようとする問題点コ しかしながら、上記従来の技術における結晶の切断方法
では、以下のことが問題点になっていた。
Problems to be Solved by the Invention However, the above-mentioned conventional crystal cutting method has the following problems.

(1)結晶+00を切断できる状態とするには、支持台
101に結晶100が嵌合できるように現物合わせ加工
を施す必要があり、大変な手間と時間を要する。これを
簡略にする手段として、定形。
(1) In order to make the crystal +00 ready for cutting, it is necessary to perform an actual fitting process so that the crystal 100 can fit onto the support stand 101, which requires a lot of effort and time. As a way to simplify this, we use a fixed form.

不定形結晶を問わず、標準的に製作した支持台の寸法に
合わせて外周研削によって整形する方法も考えられるが
、この場合も外周研削に手間と時間を要するとともに、
整形せずにまたは不定形のまま切断する必要性がある結
晶に対して適用することができない。
Regardless of the shape of the crystal, it is possible to shape it by grinding the outer periphery to match the dimensions of a standardly manufactured support, but in this case too, grinding the outer periphery requires time and effort, and
It cannot be applied to crystals that need to be cut without shaping or in an irregular shape.

(2)支持台101は結晶100の一部分を固定するの
で、強力な接着剤102を用いて厚さの薄い接着層によ
り強固に接着する必要がある。このため、切断後にこの
接着剤102を剥離するのが非常に困難であり、ウェハ
についたカスを除去し洗浄するのに長時間を要していた
(2) Since the support base 101 fixes a portion of the crystal 100, it is necessary to firmly adhere it using a strong adhesive 102 and a thin adhesive layer. For this reason, it is very difficult to peel off the adhesive 102 after cutting, and it takes a long time to remove and clean the scum from the wafer.

(3)結晶100の全周が支持台101に固定されない
ため、切断時にワークの落下、飛散が生じゃずいととも
に、固定されていないワークの縁部に貝殻状のチッピン
グが生じやすい。
(3) Since the entire circumference of the crystal 100 is not fixed to the support stand 101, the workpiece is likely to fall and scatter during cutting, and shell-like chipping is likely to occur at the edge of the workpiece that is not fixed.

本発明は、上記問題点を解決するために創案されたもの
で、あらゆる結晶などの基体の形状に短時間の切断準備
作業で対応できるようにするとともに、その基体の切断
時には基体の縁部のチッピングを防止し、さらには切断
後に基体だけの切断片を取り出すための後作業を容易に
した基体の切断方法を提供することを目的とする。
The present invention was devised to solve the above-mentioned problems, and it is possible to adapt to the shape of any type of substrate such as crystals in a short time, and also to cut the edges of the substrate when cutting the substrate. It is an object of the present invention to provide a method for cutting a substrate that prevents chipping and further facilitates post-work to take out cut pieces of only the substrate after cutting.

[問題点を解決するための手段] 上記目的を達成するための本発明の基体の切断方法の構
成は、基体を充填剤で被覆し硬化させて支持体に固定す
る工程と、前記支持体および充填剤ごとまたは充填剤ご
と前記基体を切断する工程とを有することを特徴とする
[Means for Solving the Problems] To achieve the above object, the method for cutting a substrate of the present invention includes a step of coating a substrate with a filler, curing it, and fixing it to a support; The method is characterized by comprising a step of cutting the substrate with or without the filler.

[作用] 本発明は、充填剤によって基体の全周を固定して切断時
のチッピングを防止する。その固定は、充填剤を支持体
と基体との隙間に流し込むなどして被覆し硬化するだけ
で為され、薄い接着層で基体を固定するため基体の形状
に合わせて加工された従来の支持台を不要とする。また
、基体を全外周で固定するので、充填剤は剥離の容易な
弱い接着力のものを選択し使用することができる。
[Function] The present invention prevents chipping during cutting by fixing the entire circumference of the substrate using a filler. Fixation is achieved by simply pouring a filler into the gap between the support and the base, coating it, and curing it.In order to fix the base with a thin adhesive layer, conventional supports are processed to match the shape of the base. is no longer necessary. Furthermore, since the base is fixed on the entire outer periphery, a filler with weak adhesive strength that is easily peelable can be selected and used.

[実施例コ 以下、本発明の実施例を図面に基づいて詳細に説明する
[Embodiments] Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

第1図は本発明の一実施例を示す説明図で、(イ)は側
面の断面図、(ロ)は正面図である。本実施例はウェハ
の製造工程に適用した場合を示す。本実施例は、バイブ
(円筒)状の支持体lを用意し、この中へ例えば不定形
の結晶2を挿入し、流動状態の充填剤3を流し込んで支
持体lと結晶2の隙間を充填し、その充填剤3の硬化に
より結晶2を支持体lに接着する。この固定後、支持体
lと充填剤3ごと結晶2を切断機のブレード4により切
断する。
FIG. 1 is an explanatory diagram showing an embodiment of the present invention, in which (a) is a side sectional view and (b) is a front view. This embodiment shows a case where the present invention is applied to a wafer manufacturing process. In this example, a support l in the form of a vibrator (cylindrical) is prepared, for example, an amorphous crystal 2 is inserted into it, and a filler 3 in a fluid state is poured to fill the gap between the support l and the crystal 2. Then, the crystal 2 is adhered to the support l by hardening of the filler 3. After this fixation, the crystal 2 together with the support 1 and the filler 3 is cut by a blade 4 of a cutting machine.

支持体lはカーボンで形成するのが好適であるが、ブレ
ード4の刃先4aの摩耗と目詰まりが少ない材質を持つ
ものであれば、カーボンに限定するものでない。またそ
の形状も、結晶2が挿入可能であれば、円筒状だけでな
く角筒状などおおよそ結晶形状に沿った筒体としたり、
樋状や箱状としたり、切断機へのセッテングの容易さや
安定性を考慮した筒体形状としたりすることが可能であ
る。
The support l is preferably made of carbon, but is not limited to carbon as long as it has a material that causes less wear and clogging of the cutting edge 4a of the blade 4. In addition, the shape of the crystal 2 may be not only cylindrical but also rectangular or similar to the shape of the crystal, if the crystal 2 can be inserted.
It can be shaped like a gutter or a box, or it can be shaped into a cylindrical shape that takes into account ease of setting on a cutting machine and stability.

充填剤3は硬化して接着作用を持つ必要があるが、結晶
の外周全てを接着固定するため、従来の一部外周接着の
場合のように強固な接着剤(エポキシ系合成樹脂等)を
必要とせず、例えば石膏など固定および剥離の容易な材
質のものを選択し使用できる。その他の充填剤3の材質
の例としては、熱溶融性樹脂などが、加熱によって簡単
に剥離することができ好適である。
Filler 3 needs to harden and have an adhesive effect, but in order to adhesively fix the entire outer periphery of the crystal, a strong adhesive (such as epoxy synthetic resin) is required as in the case of conventional partial periphery adhesion. Instead, you can select and use a material that is easy to fix and remove, such as plaster. As another example of the material of the filler 3, a thermofusible resin or the like is suitable because it can be easily peeled off by heating.

切断の準備作業は結晶を固定する作業であるが、流動状
態の充填剤3をパイプ状の支持体lとそこへ挿入した結
晶2との隙間へ流し込むだけで簡単に固定することがで
き、結晶2の形状に影響されることなく、短い一定時間
で行うことができる。
The preparatory work for cutting involves fixing the crystal, which can be easily fixed by simply pouring the filler 3 in a fluid state into the gap between the pipe-shaped support l and the crystal 2 inserted into it. It can be carried out in a short fixed time without being affected by the shape of 2.

切断作業においては、支持体lに固定したまま切断機へ
固定して、ブレード4を回転させることにより点線Bの
ように切断する。これに先立って、任意に切断した結晶
2の端面をX線回折や構造解析法によって結晶方位を調
べ、その結晶方位に基づいて切断方向を調整する。結晶
2は全外周を固定させるため、切断中に結晶2の縁部が
貝殻状に欠けるチッピングが生じない。また、切断は、
防塵を兼ねてブレード4に冷却液を注入しながら行われ
るので、切断部分が発熱する虞れはなく、充填剤3が熱
溶融性樹脂である場合に融けてしまう虞れはない。
In the cutting operation, the blade 4 is cut as shown by the dotted line B by rotating the blade 4 while being fixed to the support 1 and fixed to the cutting machine. Prior to this, the crystal orientation of the end face of the arbitrarily cut crystal 2 is examined by X-ray diffraction or structural analysis, and the cutting direction is adjusted based on the crystal orientation. Since the entire outer periphery of the crystal 2 is fixed, chipping, in which the edge of the crystal 2 is chipped in a shell shape, does not occur during cutting. Also, cutting is
Since the cutting is performed while cooling liquid is injected into the blade 4 to prevent dust, there is no risk of heat generation in the cut portion, and there is no risk of the filler 3 melting if it is a heat-melting resin.

切断後の後作業は、切断片から結晶だけの切断片(ウェ
ハ)を取り出す作業であるが、上記実施例では充填剤3
の剥離と洗浄によって行う。充填剤3が石膏であれば、
酸液など適切な溶剤を用いて溶かし去り、離脱したカー
ボン等を取り去る。
The post-cutting work is to take out the cut piece (wafer) containing only crystals from the cut piece, but in the above example, the filler 3
This is done by peeling and cleaning. If the filler 3 is gypsum,
Dissolve it using an appropriate solvent such as an acid solution and remove the released carbon.

もちろん、カーボン等は先に物理的に除去しておいても
構わない。充填剤3が熱溶融性樹脂であれば、加熱して
溶かし去り、その他の材質であればその材質に適した手
段で剥離除去する。前述したように充填剤3は剥離しや
すいものが選択可能なので、前述の後作業は極めて容易
になる。
Of course, carbon and the like may be physically removed first. If the filler 3 is a hot-melt resin, it is heated and melted away, and if it is made of another material, it is peeled off and removed by means suitable for the material. As mentioned above, since the filler 3 can be selected to be easily peelable, the above-mentioned post-work is extremely easy.

なお、実施例では結晶の切断において支持体と充填剤ご
と切断しているが、強度を有して硬化する充填剤を選択
することにより、充填剤の硬化後、。
In addition, in the examples, the support and filler were cut together when cutting the crystal, but by selecting a filler that hardens with strength, it is possible to cut the crystal after the filler hardens.

切断作業の前に支持体を除去して、充填剤ごと切断して
も本発明の目的を達成することができる。
The object of the present invention can also be achieved by removing the support before the cutting operation and cutting the filler together.

またこの際、透明または半透明な充填剤を選定すれば結
晶の配置状態などを識別することができ、作業性を向上
させることができる。もちろん、支持体も透明または半
透明にすれば実施例においても同様に作業性を向上させ
ることができる。また、本発明は結晶以外の半導体基体
など一般の基体にも適用できるとともに、不定形基体ば
かりでなく、定形基体にも適用可能である。このように
、本発明はその主旨に沿って種々に応用され、実施態様
を取り得るものである。
Furthermore, at this time, if a transparent or translucent filler is selected, the arrangement state of the crystals, etc. can be identified, and workability can be improved. Of course, if the support is also made transparent or translucent, workability can be similarly improved in the embodiments. Further, the present invention can be applied to general substrates such as semiconductor substrates other than crystals, and can be applied not only to irregularly shaped substrates but also to regular shaped substrates. As described above, the present invention can be applied and implemented in various ways in accordance with its gist.

[発明の効果] 以上の説明で明らかなように、本発明の基体の切断方法
によれば、以下のような効果を奏する。
[Effects of the Invention] As is clear from the above description, the method for cutting a substrate of the present invention provides the following effects.

(1)支持体に基体を充填剤で被覆して固定するので、
多角柱状や錐状、不定形状などどのような基体の形状に
対しても、切断の準備作業が短時間で済む。
(1) Since the base is coated with a filler and fixed on the support,
Preparation work for cutting can be done in a short time no matter what shape the substrate is, such as a polygonal column, a cone, or an irregular shape.

(2)基体の全周面で固定したので、切断時にチッピン
グが防止できる。
(2) Since it is fixed on the entire circumferential surface of the base, chipping can be prevented during cutting.

(3)弱い接着力で固定できるので、充填剤または支持
体の剥離と基体の切断片の洗浄が容易になる。
(3) Since it can be fixed with a weak adhesive force, it becomes easy to peel off the filler or support and wash the cut piece of the substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(イ)、(ロ)は本発明の一実施例を示す説明図
、第2図(イ)、(ロ)は従来技術の説明図である。 l・・・支持体、2・・・結晶(基体)、3・・・充填
剤。
FIGS. 1A and 1B are explanatory views showing one embodiment of the present invention, and FIGS. 2A and 2B are explanatory views of the prior art. 1... Support, 2... Crystal (substrate), 3... Filler.

Claims (1)

【特許請求の範囲】 基体を充填剤で被覆し硬化させて支持体に固定する工程
と、 前記支持体および充填剤ごとまたは充填剤ごと前記基体
を切断する工程とを有することを特徴とする基体の切断
方法。
[Scope of Claims] A substrate characterized by comprising the steps of: coating the substrate with a filler, curing it and fixing it to a support; and cutting the substrate either together with the support and the filler or with the filler. cutting method.
JP15515787A 1987-06-22 1987-06-22 Cutting method for base Pending JPS63317305A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15515787A JPS63317305A (en) 1987-06-22 1987-06-22 Cutting method for base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15515787A JPS63317305A (en) 1987-06-22 1987-06-22 Cutting method for base

Publications (1)

Publication Number Publication Date
JPS63317305A true JPS63317305A (en) 1988-12-26

Family

ID=15599774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15515787A Pending JPS63317305A (en) 1987-06-22 1987-06-22 Cutting method for base

Country Status (1)

Country Link
JP (1) JPS63317305A (en)

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