JPS62118467U - - Google Patents
Info
- Publication number
- JPS62118467U JPS62118467U JP600186U JP600186U JPS62118467U JP S62118467 U JPS62118467 U JP S62118467U JP 600186 U JP600186 U JP 600186U JP 600186 U JP600186 U JP 600186U JP S62118467 U JPS62118467 U JP S62118467U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser chip
- photodiode
- chip
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
Description
第１図は本考案の実施例を示す断面図、第２図
は本実施例装置における発振波長の温度特性を示
す特性図、第３図は従来例を示す断面図、第４図
は従来装置における発振波長の温度特性を示す特
性図である。
４…半導体レーザチツプ、５…フオトダイオー
ド。
Fig. 1 is a sectional view showing an embodiment of the present invention, Fig. 2 is a characteristic diagram showing the temperature characteristics of the oscillation wavelength in the device of this embodiment, Fig. 3 is a sectional view showing a conventional example, and Fig. 4 is a conventional device. FIG. 3 is a characteristic diagram showing the temperature characteristics of the oscillation wavelength at . 4... Semiconductor laser chip, 5... Photodiode.
Claims (1)
ら出力されるレーザ光をモニタするフオトダイオ
ードを有する半導体レーザ装置において、上記半
導体レーザチツプとフオトダイオードとの距離を
上記半導体レーザチツプの共振器長と略同一とす
ると共に上記フオトダイオードで反射したレーザ
光が上記半導体レーザチツプ方向に指向するよう
にしたことを特徴とする半導体レーザ装置。 In a semiconductor laser device having a semiconductor laser chip and a photodiode for monitoring laser light output from the semiconductor laser chip, the distance between the semiconductor laser chip and the photodiode is set to be approximately the same as the resonator length of the semiconductor laser chip, and the distance between the semiconductor laser chip and the photodiode is A semiconductor laser device characterized in that laser light reflected by the semiconductor laser chip is directed toward the semiconductor laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP600186U JPS62118467U (en) | 1986-01-20 | 1986-01-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP600186U JPS62118467U (en) | 1986-01-20 | 1986-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62118467U true JPS62118467U (en) | 1987-07-28 |
Family
ID=30788103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP600186U Pending JPS62118467U (en) | 1986-01-20 | 1986-01-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62118467U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143594A (en) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | Semiconductor laser device |
-
1986
- 1986-01-20 JP JP600186U patent/JPS62118467U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143594A (en) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | Semiconductor laser device |