JPS6211792B2 - - Google Patents

Info

Publication number
JPS6211792B2
JPS6211792B2 JP56178054A JP17805481A JPS6211792B2 JP S6211792 B2 JPS6211792 B2 JP S6211792B2 JP 56178054 A JP56178054 A JP 56178054A JP 17805481 A JP17805481 A JP 17805481A JP S6211792 B2 JPS6211792 B2 JP S6211792B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
image sensor
sensor
thickness
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56178054A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5879756A (ja
Inventor
Setsuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56178054A priority Critical patent/JPS5879756A/ja
Publication of JPS5879756A publication Critical patent/JPS5879756A/ja
Publication of JPS6211792B2 publication Critical patent/JPS6211792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56178054A 1981-11-06 1981-11-06 非晶質シリコンイメ−ジセンサ− Granted JPS5879756A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56178054A JPS5879756A (ja) 1981-11-06 1981-11-06 非晶質シリコンイメ−ジセンサ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178054A JPS5879756A (ja) 1981-11-06 1981-11-06 非晶質シリコンイメ−ジセンサ−

Publications (2)

Publication Number Publication Date
JPS5879756A JPS5879756A (ja) 1983-05-13
JPS6211792B2 true JPS6211792B2 (OSRAM) 1987-03-14

Family

ID=16041789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178054A Granted JPS5879756A (ja) 1981-11-06 1981-11-06 非晶質シリコンイメ−ジセンサ−

Country Status (1)

Country Link
JP (1) JPS5879756A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887862A (ja) * 1981-11-20 1983-05-25 Fuji Xerox Co Ltd 長尺一次元薄膜センサ
JPS60161664A (ja) * 1984-02-01 1985-08-23 Sharp Corp 密着型二次元画像読取装置
JPH07118525B2 (ja) * 1984-07-23 1995-12-18 日本電気株式会社 光電変換素子アレイ
JPH065726B2 (ja) * 1986-07-24 1994-01-19 日本電気株式会社 光電変換素子アレ−
JP7155499B2 (ja) * 2017-04-26 2022-10-19 Tdk株式会社 積層型電子部品およびその製造方法

Also Published As

Publication number Publication date
JPS5879756A (ja) 1983-05-13

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