JPS6211243A - Prober device having temperature control means - Google Patents

Prober device having temperature control means

Info

Publication number
JPS6211243A
JPS6211243A JP60145832A JP14583285A JPS6211243A JP S6211243 A JPS6211243 A JP S6211243A JP 60145832 A JP60145832 A JP 60145832A JP 14583285 A JP14583285 A JP 14583285A JP S6211243 A JPS6211243 A JP S6211243A
Authority
JP
Japan
Prior art keywords
wafer
temperature
glass board
hood
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60145832A
Other languages
Japanese (ja)
Inventor
Fujio Ozawa
小沢 不二夫
Hikari Okitsu
興津 光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP60145832A priority Critical patent/JPS6211243A/en
Publication of JPS6211243A publication Critical patent/JPS6211243A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To elevate the temperature of a wafer to a fixed value rapidly with high precision by mounting an air-feeding hose and an air discharging hose and feeding and circulating a gas at a fixed temperature into a closed chamber in which the wafer is placed. CONSTITUTION:A tempered glass board 13 is releasably supported horizontally to the upper section of a table 1' driven in the X, Y, Z and theta directions while a hood 14 is fitted around the table 1', the upper end of the hood is brought into contact with the glass board 13 in a sliding manner, thus forming a closed space 15 to the upper section of the table 1'. The glass board 13 is the size capable of covering the range of the movement area of the table 1' when the table 1' is shifted in a horizontal surface. A probe card 11' is mounted onto the glass board 13. An air feeding hose 19 and an air discharging hose 20 are set up while penetrating these glass board 13 and card 11', and temperature- controlled air is fed and circulated into the space 15. Accordingly, the temperature of a wafer 3 is elevated quickly to a fixed value when the novel wafer 3 is placed on the table 1'.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ウェハ面に設けられている半導体回路にプロ
ーブを接触導通せしめて電気的性能を検査するプローバ
装置に係り、特に所定の検査条件温度で検査を行えるよ
うに改良したプローバ装置に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a prober device that tests electrical performance by bringing a probe into contact with a semiconductor circuit provided on a wafer surface to conduct electricity, and particularly under predetermined test conditions such as temperature and temperature. This invention relates to a prober device that has been improved so that it can perform inspections.

〔発明の背景〕[Background of the invention]

ICを製造する際、半導体ウェハの表面に多数の半導体
回路(通常数10乃至数100個)を配列して構成し、
これを切断してそれぞれの切断片にリードを接続してモ
ールド成形して完成ICが得られる。
When manufacturing an IC, a large number of semiconductor circuits (usually several tens to several hundred) are arranged and configured on the surface of a semiconductor wafer.
This is cut, leads are connected to each cut piece, and molded to obtain a completed IC.

完成品の検査はICハンドラによって搬送しつつICテ
スタによって自動的に行われる。
The finished product is automatically inspected by an IC tester while being transported by an IC handler.

しかし、半導体回路に不良品が発生したときは、なるべ
く初期の工程で発見、排除した方が、その後の加工コス
トが節減されるので経済的である。
However, when a defective product occurs in a semiconductor circuit, it is more economical to discover and eliminate it as early as possible in the process because subsequent processing costs can be reduced.

こうした観点から、IC製造工程の途中で、ウェハ段階
のICの電気的特性を検査する為、プローバ装置が用い
られている。
From this point of view, a prober device is used to inspect the electrical characteristics of an IC at the wafer stage during the IC manufacturing process.

第2図は公知のプローバ装置の一例を示す模式的な垂直
断面図である。
FIG. 2 is a schematic vertical sectional view showing an example of a known prober device.

テーブル1の上面に真空吸着ベッド2を設けてウェハ3
がチャックされる。
A vacuum suction bed 2 is provided on the top surface of the table 1, and the wafer 3 is
is checked.

上記のテーブル1は水平な直交2軸X、Yに沿って(Y
軸は紙面に垂直)精密に駆動され、垂直軸Zに沿って精
密に上下駆動され、かつ、Z軸回りのθ方向に精密に回
転駆動される構造である。
The above table 1 is arranged along two horizontal orthogonal axes X and Y (Y
The shaft is perpendicular to the plane of the paper), is precisely driven up and down along the vertical axis Z, and is precisely rotated in the θ direction around the Z axis.

即ち、4は、テーブル1を回動自在に支承しているベア
リング、5はθ方向の駆動用モータである。上記のモー
タ5に減速光歯車6aが固着され、テーブル1に減速受
歯車6bが取り付けられている。
That is, 4 is a bearing that rotatably supports the table 1, and 5 is a motor for driving in the θ direction. A deceleration optical gear 6a is fixed to the motor 5, and a deceleration receiving gear 6b is attached to the table 1.

7はテーブル1を支承してY軸方向に案内するガイドシ
ャフト、8はY軸方向駆動モータ、8aはY軸方向送り
ネジである。
7 is a guide shaft that supports the table 1 and guides it in the Y-axis direction, 8 is a Y-axis direction drive motor, and 8a is a Y-axis direction feed screw.

9はX軸方向ガイドシャフトである。9 is an X-axis direction guide shaft.

テーブル1上のウェハ3の上方に、対向せしめてプロー
ブ針10.同10が配設される。該プローブ針lOはプ
ローブカード11に取り付けられている。
Above the wafer 3 on the table 1, the probe needles 10. 10 will be installed. The probe needle IO is attached to the probe card 11.

プローブカード11は検査用の配線基板である。The probe card 11 is a wiring board for inspection.

上記の従来装置(第2図)を用いてウェハ3の半導体回
路を検査するには、前記のXYZθ駆動手段によってテ
ーブル1を動かし、プローブ針lOの先端を半導体回路
(ウェハ3の上面)に接触、導通せしめて行われる。
In order to inspect the semiconductor circuit on the wafer 3 using the above-mentioned conventional apparatus (Fig. 2), the table 1 is moved by the above-mentioned XYZθ driving means, and the tip of the probe needle 10 is brought into contact with the semiconductor circuit (the upper surface of the wafer 3). , conduction is performed.

上に述べた半導体回路の検査に当たって、製品の仕様に
応じた検査条件温度が設定される。この°検査条件温度
は、例えば−50℃といった低温の場合もあり、又、例
えば120℃といった高温の場合もある。
When inspecting the semiconductor circuit described above, the inspection condition temperature is set according to the specifications of the product. The inspection condition temperature may be as low as -50°C, for example, or as high as 120°C, for example.

従来技術においては、上記のような低温若しくは高温で
プローブ検査を行う場合、エアーノズル12を設けてプ
ローブ針10の先端付近に向けて熱風又は冷風を吹きつ
け、該熱、冷風によってウェハ3を加熱、冷却して所定
温度ならしめてプローブ検査を行っている。
In the conventional technology, when performing probe inspection at low or high temperatures as described above, an air nozzle 12 is provided to blow hot or cold air toward the vicinity of the tip of the probe needle 10, and the wafer 3 is heated by the heat or cold air. Then, the probe is tested after being cooled down to a predetermined temperature.

しかし、上に述べたように熱風、冷風を吹きつけること
によってウェハ3を所定温度ならしめるには長時間を要
するので検査能率を低下させる。
However, as described above, it takes a long time to bring the wafer 3 to a predetermined temperature by blowing hot air or cold air, which reduces inspection efficiency.

その上、温度精度が悪くて検査信頼性が低い6〔発明の
目的〕 本発明は上述の事情に鑑みて為されたもので、検査能率
を低下せしめることなく、迅速に、かつ高精度で、ウェ
ハを所定の温度にすることのできる、温度制御手段を備
えたプローバ装置を提供しようとするものである。
Moreover, the temperature accuracy is poor and the test reliability is low.6 [Object of the Invention] The present invention has been made in view of the above-mentioned circumstances. It is an object of the present invention to provide a prober device equipped with temperature control means that can bring a wafer to a predetermined temperature.

〔発明の概要〕[Summary of the invention]

上記の目的を達成する為、本発明の装置は、水平な直交
2軸x、yに沿った水平面内と、垂直軸2に沿った垂直
方向と、上記Z軸回りのθ方向とに精密に駆動されるX
YZθテーブル上にウェハをチャックし、上記のウェハ
にプローブを接触させて該ウェハに構成されている半導
体回路の電気的性能を検査するプローバ装置において、
被検査物であるウェハを載置するテーブル面の上方に、
該テーブルの水平面内移動範囲をカバーし得る大きさの
板状部材を水平に支承するとともに、前記テーブルの周
囲付近に筒状のフードを弾性的に支承して該フードの上
端を前記板状部材に接触せしめて、テーブル上に載置し
たウェハを取り囲む密閉室を形成するとともに、前記板
状部材を貫通せしめてプローブを支承し、かつ、前記の
板状部材に送気ホース及び排気ホースを貫通固着して、
前記密閉室の中に所定温度の気体を送給、循環せしめる
ように構成したことを特徴とする。
In order to achieve the above object, the device of the present invention provides precise precision in the horizontal plane along two horizontal orthogonal axes x and y, in the vertical direction along the vertical axis 2, and in the θ direction around the Z axis. driven x
In a prober device that chucks a wafer on a YZθ table and brings a probe into contact with the wafer to inspect the electrical performance of a semiconductor circuit configured on the wafer,
Above the table surface on which the wafer to be inspected is placed,
A plate member having a size that can cover the movement range of the table in a horizontal plane is supported horizontally, and a cylindrical hood is elastically supported near the periphery of the table, so that the upper end of the hood is attached to the plate member. to form a sealed chamber surrounding the wafer placed on the table, the probe is supported by passing through the plate member, and an air supply hose and an exhaust hose are passed through the plate member. Stick to it,
It is characterized in that it is configured to supply and circulate gas at a predetermined temperature into the sealed chamber.

C発明の実施例〕 次に、本発明の一実施例を第1図について説明する。Example of invention C] Next, an embodiment of the present invention will be described with reference to FIG.

この実施例の装置は、先に説明した従来例のプローバ装
置に本発明を適用して改良したもので、第2図(従来例
)と同一の図面参照番号にダラシを付したx、y、z、
θ方向に駆動されるテーブル1′は、前記従来例におけ
るテーブル1に対応する部材である。また、第2図と同
一の図面参照番号を付した部材は前記従来例におけると
同様乃至は類似の構成部材である。
The device of this embodiment is an improved version of the conventional prober device described above by applying the present invention. z,
The table 1' driven in the θ direction is a member corresponding to the table 1 in the conventional example. Further, members having the same drawing reference numbers as in FIG. 2 are the same or similar structural members as in the conventional example.

テーブル1′の上方に強化ガラス板13を水平に支承す
ると共に、テーブル1′の周囲にフード14を設け、そ
の上端を強化ガラス板13に接触せしめて、テーブル1
′の上方に密閉空間15を形成する。
A tempered glass plate 13 is supported horizontally above the table 1', and a hood 14 is provided around the table 1', the upper end of which is brought into contact with the tempered glass plate 13.
A closed space 15 is formed above the space.

上記の強化ガラス板13の大きさは、テーブル1′がx
、Y軸に沿って水平面内で移動したとき、その移動区域
範囲をカバーできる大きさとする。
The size of the above tempered glass plate 13 is that the table 1' is x
, has a size that can cover the area of movement when moving in a horizontal plane along the Y axis.

前記のフード14は円筒状に構成し、スプリング16に
よって上方に付勢する。本例のフード14はテフロン(
商標名)を用いて強化ガラス板13に対する摩擦抵抗を
少なくするように、かつ、耐熱、耐冷性に優れたように
しである。
The hood 14 has a cylindrical shape and is urged upward by a spring 16. The hood 14 in this example is made of Teflon (
(trade name) to reduce frictional resistance against the tempered glass plate 13 and to have excellent heat resistance and cold resistance.

前記のフード14の外側に円周状のリップ17を設けて
フード14の気密性を完全ならしめると共に、該リップ
17にホース18を貫通固着してドライエアを送入でき
るように構成する。
A circumferential lip 17 is provided on the outside of the hood 14 to make the hood 14 completely airtight, and a hose 18 is fixedly inserted through the lip 17 so that dry air can be introduced.

前記の強化ガラス板13の上にプローブカード11′を
取りつける。このプローブカード11′にはプローブ針
lOの先端が見えるように、ガラスを嵌めこんだ覗き窓
11aを設けである。
A probe card 11' is mounted on the tempered glass plate 13. This probe card 11' is provided with a viewing window 11a fitted with glass so that the tip of the probe needle 1O can be seen.

前記の強化ガラス板13およびプローブカード11′を
貫通せしめて送気ホース19及び排気ホース20を取り
つけ、温度制御された空気(−50℃〜120℃の範囲
内で任意の温度に冷し若しくは熱した空気)を密閉空間
15に送給、循環せしめ得るように構成する。
The air supply hose 19 and the exhaust hose 20 are attached to the tempered glass plate 13 and the probe card 11' by passing through the tempered glass plate 13 and the probe card 11'. The structure is configured such that air) can be fed and circulated into the closed space 15.

以上の如く構成した本実施例の装置を使用するには、所
定温度の空気を送気ホース19から送入しつつ排気ホー
ス20から流出せしめて循環させる。
In order to use the apparatus of this embodiment constructed as described above, air at a predetermined temperature is introduced through the air supply hose 19 and then discharged from the exhaust hose 20 to be circulated.

暫時循環させると、密閉空間15を取り囲んでいる部材
(真空吸着ベッド2・強化ガラス板13・フード14)
がほぼ所定温度になる。このため、テーブル1を下降さ
せて新しいウェハ3を置くと速やかに所定温度になる。
When circulated for a while, the members surrounding the closed space 15 (vacuum adsorption bed 2, tempered glass plate 13, hood 14)
becomes approximately the predetermined temperature. Therefore, when the table 1 is lowered and a new wafer 3 is placed, the temperature quickly reaches the predetermined temperature.

また、ウェハ3に着目すると、該ウェハ3を取り囲んで
いる雰囲気及び取り囲んでいる部材が総べて所定温度に
なっているので、該ウェハ3は所定温度に安定し、正確
に所定温度に保持される。
Furthermore, when focusing on the wafer 3, the atmosphere surrounding the wafer 3 and the surrounding members are all at a predetermined temperature, so the wafer 3 is stabilized at a predetermined temperature and is accurately maintained at a predetermined temperature. Ru.

密閉空間を室温以下の低温に保つ場合は、リップ17と
強化ガラス板13との接触部に霜を生じて摺動を妨げる
虞れが有るので、そのような場合はホース18からドラ
イエアーを供給して除霜する。
If the closed space is kept at a low temperature below room temperature, there is a risk that frost will form at the contact area between the lip 17 and the tempered glass plate 13 and prevent sliding, so in such a case, dry air is supplied from the hose 18. and defrost.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明の温度制御装置によれば、
被検査物であるウェハを迅速に所定温度ならしめること
ができるので高能率で検査を遂行することができ、しか
も該ウェハを正・確に所定温度に保持することができる
という優れた実用的効果を奏する。
As explained above, according to the temperature control device of the present invention,
The wafer to be inspected can be quickly brought to a predetermined temperature, so inspection can be carried out with high efficiency, and the wafer can be accurately and precisely maintained at a predetermined temperature, which is an excellent practical effect. play.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の温度制御手段を備えたプローバ装置の
一実施例を模式的に描いた断面図である。 第2図は従来技術に係る温度制御装置を説明する為の模
式的な断面図である。 1.1′・・・x、y、z、 θ方向に駆動されるテー
ブル、2・・・真空吸着ベッド、3・・・被検査物であ
るウェハ、10・・・プローブ針、11.11’・・・
プローブカード、lla・・・覗き窓、12・・・エア
ーノズル、13・・・強化ガラス板、14・・・フード
、15・・・密閉空間、16・・・スプリング、17・
・・リップ、19・・・送気ホース、20・・・排気ホ
ース。
FIG. 1 is a sectional view schematically depicting an embodiment of a prober device equipped with temperature control means of the present invention. FIG. 2 is a schematic cross-sectional view for explaining a temperature control device according to the prior art. 1.1'...Table driven in x, y, z, θ directions, 2...Vacuum suction bed, 3...Wafer as inspection object, 10...Probe needle, 11.11 '...
Probe card, lla... Peep window, 12... Air nozzle, 13... Tempered glass plate, 14... Hood, 15... Closed space, 16... Spring, 17...
...Lip, 19...Air supply hose, 20...Exhaust hose.

Claims (1)

【特許請求の範囲】[Claims] 水平な直交2軸X、Yに沿った水平面内と、垂直軸Zに
沿った垂直方向と、上記Z軸回りのθ方向とに精密に駆
動されるXYZθテーブル上にウェハをチャックし、上
記のウェハにプローブを接触させて該ウェハに構成され
ている半導体回路の電気的性能を検査するプローバ装置
において、被検査物であるウェハを載置するテーブル面
の上方に、該テーブルの水平面内移動範囲をカバーし得
る大きさの板状部材を水平に支承するとともに、前記テ
ーブルの周囲付近に筒状のフードを弾性的に支承し、該
フードの上端を前記板状部材に摺触せしめて、テーブル
上に載置したウェハを取り囲む密閉室を形成するととも
に、前記板状部材を貫通せしめてプローブを支承し、か
つ、前記の板状部材に送気ホース及び排気ホースを貫通
固着して、前記密閉室の中に所定温度の気体を送給、循
環せしめるように構成したことを特徴とする、温度制御
手段を備えたプローバ装置。
The wafer is chucked onto an XYZθ table that is precisely driven in the horizontal plane along two horizontal orthogonal axes X and Y, in the vertical direction along the vertical axis Z, and in the θ direction around the Z axis. In a prober device that tests the electrical performance of a semiconductor circuit configured on a wafer by bringing a probe into contact with the wafer, a horizontal movement range of the table is placed above the table surface on which the wafer is placed. horizontally supporting a plate member of a size that can cover the table, a cylindrical hood being elastically supported near the periphery of the table, and the upper end of the hood slidingly touching the plate member. A sealed chamber surrounding the wafer placed thereon is formed, a probe is supported by passing through the plate-like member, and an air supply hose and an exhaust hose are passed through and fixed to the plate-like member to form a sealed chamber. A prober device equipped with temperature control means, characterized in that it is configured to supply and circulate gas at a predetermined temperature into a chamber.
JP60145832A 1985-07-04 1985-07-04 Prober device having temperature control means Pending JPS6211243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60145832A JPS6211243A (en) 1985-07-04 1985-07-04 Prober device having temperature control means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60145832A JPS6211243A (en) 1985-07-04 1985-07-04 Prober device having temperature control means

Publications (1)

Publication Number Publication Date
JPS6211243A true JPS6211243A (en) 1987-01-20

Family

ID=15394143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60145832A Pending JPS6211243A (en) 1985-07-04 1985-07-04 Prober device having temperature control means

Country Status (1)

Country Link
JP (1) JPS6211243A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010296A (en) * 1989-12-13 1991-04-23 Mitsubishi Denki Kabushiki Kaisha Wafer prober
JPH05235122A (en) * 1990-06-29 1993-09-10 Digital Equip Corp <Dec> Fixture and method for testing integrated circuit
JPH06104321A (en) * 1991-03-26 1994-04-15 Erich Reitinger Testing apparatus of semiconductor wafer, etc.
US6191599B1 (en) 1998-10-09 2001-02-20 International Business Machines Corporation IC device under test temperature control fixture
WO2002082528A1 (en) * 2001-04-04 2002-10-17 Fujitsu Limited Contactor device for semiconductor device and method of testing semiconductor device
KR100768915B1 (en) * 2006-03-17 2007-10-23 양 전자시스템 주식회사 Probe test apparatus of flat pannel display
US10267848B2 (en) 2008-11-21 2019-04-23 Formfactor Beaverton, Inc. Method of electrically contacting a bond pad of a device under test with a probe

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010296A (en) * 1989-12-13 1991-04-23 Mitsubishi Denki Kabushiki Kaisha Wafer prober
JPH05235122A (en) * 1990-06-29 1993-09-10 Digital Equip Corp <Dec> Fixture and method for testing integrated circuit
JPH06104321A (en) * 1991-03-26 1994-04-15 Erich Reitinger Testing apparatus of semiconductor wafer, etc.
US6191599B1 (en) 1998-10-09 2001-02-20 International Business Machines Corporation IC device under test temperature control fixture
WO2002082528A1 (en) * 2001-04-04 2002-10-17 Fujitsu Limited Contactor device for semiconductor device and method of testing semiconductor device
US6975126B2 (en) 2001-04-04 2005-12-13 Fujitsu Limited Contactor apparatus for semiconductor devices and a test method of semiconductor devices
KR100702021B1 (en) * 2001-04-04 2007-04-06 후지쯔 가부시끼가이샤 Contactor device for semiconductor device and method of testing semiconductor device
US7304487B2 (en) 2001-04-04 2007-12-04 Fujitsu Limited Test method of semiconductor devices
KR100768915B1 (en) * 2006-03-17 2007-10-23 양 전자시스템 주식회사 Probe test apparatus of flat pannel display
US10267848B2 (en) 2008-11-21 2019-04-23 Formfactor Beaverton, Inc. Method of electrically contacting a bond pad of a device under test with a probe

Similar Documents

Publication Publication Date Title
TWI283451B (en) Probe apparatus for temperature control of the examined body and probe examining method
KR100827465B1 (en) Substrate Inspection Apparatus and Method
KR100291109B1 (en) Probe inspection and repair apparatus having burr-in inspection function of semiconductor wafer, burr-in inspection apparatus of semiconductor wafer
US8432176B2 (en) Apparatus and method for testing semiconductor devices
US11054465B2 (en) Method of operating a probing apparatus
CN110007213B (en) Damage-proof high-precision chip detection equipment with fixing function
JPS6211243A (en) Prober device having temperature control means
JP7413647B2 (en) transport unit
KR20190103957A (en) Inspection system
JP3238246B2 (en) Semiconductor wafer inspection repair device and burn-in inspection device
CN115274484A (en) Wafer detection device and detection method thereof
JP2016201556A (en) Prober
JP2006317346A (en) Probing system and prober
JPS6263439A (en) Method for controlling temperature of prober apparatus
JP3016992B2 (en) Semiconductor wafer inspection repair device and burn-in inspection device
JP2010175287A (en) Apparatus and method for inspecting electronic device
JPH03160341A (en) Fully automatic tensile tester equipped with thermostatic tank
KR0180610B1 (en) Probe card tester
JPH02103947A (en) Inspecting method of semiconductor wafer
JP4902986B2 (en) Prober and prober wafer stage heating or cooling method
JPH01145586A (en) Probe apparatus with function of automatic replacement of probe card
TWI687691B (en) Multi-probing device
CN220941905U (en) Test sorting unit suitable for a large number of chips
JP2022175805A (en) Prober and probe alignment method
JP2007005348A (en) Substrate-testing method and substrate-testing device