TWI687691B - Multi-probing device - Google Patents

Multi-probing device Download PDF

Info

Publication number
TWI687691B
TWI687691B TW107145519A TW107145519A TWI687691B TW I687691 B TWI687691 B TW I687691B TW 107145519 A TW107145519 A TW 107145519A TW 107145519 A TW107145519 A TW 107145519A TW I687691 B TWI687691 B TW I687691B
Authority
TW
Taiwan
Prior art keywords
test device
test
item
patent application
test structure
Prior art date
Application number
TW107145519A
Other languages
Chinese (zh)
Other versions
TW202024642A (en
Inventor
陳志文
陳銘福
林儀豪
Original Assignee
財團法人國家實驗硏究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 財團法人國家實驗硏究院 filed Critical 財團法人國家實驗硏究院
Priority to TW107145519A priority Critical patent/TWI687691B/en
Application granted granted Critical
Publication of TWI687691B publication Critical patent/TWI687691B/en
Publication of TW202024642A publication Critical patent/TW202024642A/en

Links

Images

Abstract

A probing device is applied to a probing and testing system for semiconductor or electronic components, especially to a probing and testing system that is used to input a specific gas inside. To fix a probe card at one end of the probing device, and then introducing a specific gas into the interior of the probing device before starting the probing operation, and guiding the specific gas to the area of the probe tips on a probe card by the mechanical design. A plurality of probe tips simultaneously contact a plurality of pads of a plurality of dies on the wafer, and an appropriate voltage or current is applied to perform an electrical test of dies on the wafer to ensure product quality.

Description

多點測試裝置 Multi-point test device

本發明有關於一種用於測試電子元件的測試裝置,尤指一種利用具有多探針的探針卡,可以在特定氣體氣氛中(或保護性氣體氛圍中)測試電子元件之點測裝置。 The invention relates to a testing device for testing electronic components, in particular a spot measuring device which can test electronic components in a specific gas atmosphere (or in a protective gas atmosphere) by using a probe card with multiple probes.

目前市面上現有的晶粒點測設備,大部分屬於單顆晶粒點測方式,將探針置於晶粒上方,每根探針均可微幅調整空間位置以配合晶粒上焊墊(pads)位置,點測時,探針不動,而由下方晶圓進行相對上下振動(與晶粒上焊墊接觸或分離)與水平移動(移至相鄰晶粒上的焊墊)來完成整片晶圓的點測作業。但用此方法要完成整片晶圓點測,需要花費很長時間(如台灣專利號I526702及台灣專利號I623730)。 At present, most of the existing die spot measuring equipment on the market belongs to the single grain spot measuring method. The probe is placed above the die, and each probe can be slightly adjusted in space to match the pad on the die ( pads) position, the probe does not move during spot measurement, and the lower wafer performs relatively vertical vibration (contact or separation with the pad on the die) and horizontal movement (moves to the pad on the adjacent die) to complete the adjustment Spot testing of wafers. However, it takes a long time to complete the spot measurement of the entire wafer using this method (such as Taiwan Patent No. I526702 and Taiwan Patent No. I623730).

另外還有一種發光二極體多點測試機,利用探針卡上複數個探針同時接觸複數個晶粒上的複數個焊墊。但是量測時是依序一顆接一顆供電,LED依序發光,由上方之積分球收光後依序批次量測每顆LED的光學特性。(如台灣專利號M444519)。 There is also a multi-point testing machine for light-emitting diodes, which uses a plurality of probes on a probe card to simultaneously contact a plurality of solder pads on a plurality of crystal grains. However, during the measurement, the power is supplied one by one in sequence, and the LEDs emit light in sequence. After receiving the light from the integrating sphere above, the optical characteristics of each LED are measured in batches in sequence. (Such as Taiwan Patent No. M444519).

以上所提及的點測設備均是在一般大氣環境下進行點測作業,並未針對在特定流體環境下進行點測作業,尤其是針對流體感應晶片所進行的點測作業。 The above-mentioned spot-testing devices are used for spot-testing operations in general atmospheric environment, but not for spot-testing operations in a specific fluid environment, especially for fluid-sensing wafers.

本技術所揭露為一種多點點測裝置,可應用於半導體或電子元件之點測設備中,尤指可應用於通入特定流體的點測設備中。該點測裝置的一端固定探針卡,進行點測作業前先通入特定流體於該點測裝置的內部,並以機構設計將特定流體導引流向探針卡之探針針尖所在區域,並以複數個探針針尖同時接觸晶圓上複數個晶片的複數個焊墊(Pads),通入適當的電壓或電流,以進行晶片內的電性測試,確保產品品質。 The technology disclosed is a multi-point spot measuring device, which can be applied to spot testing equipment for semiconductor or electronic components, especially to spot testing equipment for passing a specific fluid. The probe card is fixed at one end of the spot measuring device, before the spot measuring operation, a specific fluid is passed into the spot measuring device, and the specific fluid is directed to the area where the probe needle tip of the probe card is located by a mechanism design, and Multiple probe tips are used to simultaneously contact multiple pads (Pads) of multiple wafers on the wafer, and an appropriate voltage or current is applied to conduct electrical tests within the chip to ensure product quality.

本技術所揭露為一點測用裝置,除了可以用於一般大氣環境下進行點測作業外,特別適合在特定流體環境下,對流體感應晶片進行點測作業。本技術所揭露的點測裝置有一測試結構,測試結構的其中一端可以結合探針卡,在測試結構內有一中空區域,特定流體由測試結構的外壁孔通入後流向測試結構的中空區域,由於機構設計因素,使得特定流體只能被導向另一端出口,此出口非常靠近探針卡的探針針尖所在區域的附近,因而使得特定流體可以充分分佈在探針針尖與晶圓表面接觸的區域附近,並在該接觸區域維持特定流體相當於輸入時的濃度等級。 The device disclosed in this technology is a point measuring device. In addition to being used for point measuring operation in a general atmospheric environment, it is particularly suitable for point measuring operation on a fluid sensing chip under a specific fluid environment. The spot testing device disclosed in this technology has a test structure, one end of the test structure can be combined with a probe card, and there is a hollow area in the test structure, and a specific fluid flows into the hollow area of the test structure after passing through the outer wall hole of the test structure. Mechanism design factors, so that specific fluid can only be directed to the other end of the outlet, this outlet is very close to the area of the probe tip of the probe card, so that the specific fluid can be fully distributed near the area where the probe tip contacts the wafer surface , And maintain a specific fluid in the contact area equivalent to the concentration level at the time of input.

在本案設計此測試裝置時,原先將該特定流體設計由腔體之上方或腔體之側面通入該特定流體,此種輸入方式需要花費相對較長時間才能使特定流體在探針針尖附近區域的濃度接近點測時所要達到的濃度等級,此相對較費時又不易達到點測時所需要保持的流體濃度,效果相對較差。因此在進一步的改進上,使用本技術所發明的裝置,將特定流體通過測試裝置後直接流向到探針針尖所在點測區域附近,可以在幾秒內就讓探針針尖區域達到點測時理想的流體濃度,效果好又快速,同時又可以達到節省輸入特定流體的流量。 In the design of the test device in this case, the specific fluid was originally designed to pass into the specific fluid from above the cavity or the side of the cavity. This input method takes a relatively long time to make the specific fluid in the vicinity of the probe tip The concentration is close to the concentration level to be achieved during spot measurement, which is relatively time-consuming and difficult to reach the fluid concentration required to be maintained during spot measurement, and the effect is relatively poor. Therefore, for further improvement, using the device invented by this technology, the specific fluid flows directly to the vicinity of the spot where the probe tip is located after passing through the test device, which can make the probe tip area reach the ideal point measurement within a few seconds. The fluid concentration is good and fast, and at the same time it can save the flow of input specific fluid.

除此之外,該裝置同時包含傾角調整機構,用於調整探針卡上複數個探針針尖所在的虛擬平面,使複數個針尖所在的平面與晶圓表面保持平行狀態,以確保為數眾多的探針針尖均可以同時接觸到晶粒(或稱為晶片、芯片、裸晶)表面上的焊墊,不會有部分針尖未接觸晶粒表面上的焊墊或過度接觸晶粒表面上的焊墊所導致刺穿晶粒焊墊(pads或稱為電極墊或接點)的現象發生。 In addition, the device also includes an inclination adjustment mechanism for adjusting the virtual plane where the probe tips of the probe cards are located, so that the plane where the probe tips are located is parallel to the wafer surface to ensure that a large number of Probe tips can all touch the pads on the surface of the die (or called wafer, chip, die) at the same time, and there will be no part of the tip that does not touch the pad on the surface of the die or excessively touch the solder on the surface of the die The phenomenon of puncturing the die pads (pads or electrode pads or contacts) caused by the pads occurs.

此外,在該點測裝置中測試結構之外側,可以選擇額外加裝觀測裝置如鏡頭,以觀測探針卡上探針針尖們的排列方向與晶圓上相對應晶粒的複數個焊墊(pads)的排列方向,是否彼此互相對正與接觸。如果沒有對正,則可以藉由調整晶圓下方的移動滑台與旋轉滑台,來進行晶圓的移動與旋轉,直到最終將兩者對正後再慢慢降下探針卡,使得探針針尖與晶圓上的晶粒進行接觸。然後通入適當的電壓或電流,以同時進行複數個晶粒內的電性特性測試,接著移動下方的晶圓,逐次完成整片晶圓的測試作業。 In addition, on the outside of the test structure in the spot testing device, an additional observation device such as a lens can be selected to observe the arrangement direction of the probe tips on the probe card and the plurality of pads corresponding to the die on the wafer ( Whether the direction of pads) is aligned with each other or not. If there is no alignment, you can adjust the moving slide and rotary slide under the wafer to move and rotate the wafer until the two are finally aligned and then slowly lower the probe card to make the probe The tip contacts the die on the wafer. Then pass the appropriate voltage or current to test the electrical characteristics of multiple dies at the same time, and then move the wafer below to complete the test operation of the entire wafer one by one.

依據上述構想,本揭示提供一種用於測試一流體感測晶片的測試裝置,耦接於一腔體,該測試裝置被配置成通入一特定流體,該測試裝置包含一測試結構、一傾角調整機構、一可伸縮具氣密性元件(例如波紋管,但不限定於波紋管,以下為方便描述,以波紋管一詞代替)以及一探針卡。該波紋管可撓性地耦接於該測試結構。該測試結構具有一內部中空區域以及一外壁,其中該內部中空區域具有一出口,且該外壁具有一入口以連通該內部中空區域。 Based on the above concept, the present disclosure provides a test device for testing a fluid sensing chip, coupled to a cavity, the test device is configured to pass a specific fluid, the test device includes a test structure, an inclination adjustment Mechanism, a telescopic airtight element (such as bellows, but not limited to bellows, the following description is convenient, replaced by the word bellows) and a probe card. The bellows is flexibly coupled to the test structure. The test structure has an inner hollow region and an outer wall, wherein the inner hollow region has an outlet, and the outer wall has an inlet to communicate with the inner hollow region.

本揭示提供一種用於測試晶片的測試裝置,尤其指用於測試 一流體感測晶片的測試裝置。本發明的具體實施例請參閱圖式以更進一步說明本發明的技術內容。 The present disclosure provides a testing device for testing wafers, especially for testing A testing device for fluid sensing wafers. For specific embodiments of the present invention, please refer to the drawings to further illustrate the technical content of the present invention.

10:晶粒 10: grain

101:焊墊 101: solder pad

12:探針 12: Probe

121,221:針尖 121,221: Needle tip

20:複數晶粒 20: plural grains

201:複數焊墊 201: plural pads

22:複數探針 22: complex probe

30,50:測試裝置 30,50: test device

39,59:特定流體 39,59: specific fluid

300,500:測試結構 300,500: test structure

302,502:側壁開口 302,502: sidewall opening

303,503:上端開口 303,503: upper opening

304:透明物件 304: Transparent objects

305,505:下端開口 305,505: lower opening

390,590:特定流體方向 390,590: specific fluid direction

31,51:Z軸驅動軸 31,51: Z axis drive shaft

33,53:傾角調整機構 33,53: Inclination adjustment mechanism

32,52:腔體 32,52: cavity

34,54:波紋管 34,54: Bellows

35,55:流體管路 35,55: fluid line

37,57:探針卡 37,57: Probe card

36:取像裝置 36: imaging device

370,570:複數探針 370,570: complex probe

38,58:晶圓 38,58: Wafer

321,521:真空吸盤 321,521: Vacuum suction cup

322,522:加熱裝置 322,522: heating device

323,523:多軸滑台 323,523: Multi-axis slide table

301,501:中空區域 301,501: hollow area

30’,50’:測試設備 30’, 50’: Test equipment

306,506:外壁 306, 506: outer wall

307,507:空隙 307,507: gap

本揭露得藉由下列圖式之詳細說明,俾得更深入之瞭解:第一圖為本發明較佳實施例單晶粒點測的示意圖。 This disclosure can be gained a deeper understanding through the detailed description of the following figures: The first figure is a schematic diagram of single die spot measurement according to the preferred embodiment of the present invention.

第二圖為本發明較佳實施例多點測試複數晶粒的示意圖。 The second figure is a schematic diagram of multi-point testing of multiple die in the preferred embodiment of the present invention.

第三圖A為本發明較佳實施例測試結構的示意圖。 The third figure A is a schematic diagram of the test structure of the preferred embodiment of the present invention.

第三圖B為本發明較佳實施例多點測試裝置的剖面圖(本案指定代表圖) The third figure B is a cross-sectional view of a multi-point test device according to a preferred embodiment of the present invention (designated representative figure in this case)

第四圖為本發明較佳實施例可應用於流體感測晶片的測試設備的示意圖。 The fourth figure is a schematic diagram of a test device that can be applied to a fluid sensing wafer according to a preferred embodiment of the present invention.

第五圖A為本發明另一較佳實施例測試結構的示意圖。 The fifth figure A is a schematic diagram of a test structure of another preferred embodiment of the present invention.

第五圖B為本發明較佳實施例多點測試裝置的剖面圖(第二實施例) Fifth figure B is a cross-sectional view of a multi-point test device according to a preferred embodiment of the present invention (second embodiment)

第六圖為本發明另一較佳實施例可應用於流體感測晶片的測試設備的示意圖。 FIG. 6 is a schematic diagram of another preferred embodiment of the present invention that can be applied to a fluid sensing wafer testing device.

請參酌本發明的附圖來閱讀下面的詳細說明,其中本發明的附圖是以舉例說明的方式,來介紹本發明各種不同的實施例,並供瞭解如何實現本發明。本發明實施例提供了充足的內容,以供本領域的技術人員來實施本發明所揭示的實施例,或實施依本發明所揭示的內容所衍生的實施例。須注意的是,該些實施例彼此間並不互斥,且部分實施例可與其他一個或多個實施例作適當結合,以形成新的實施例,亦即本發明的實施並不局限於以下所揭示的實施例。 Please refer to the drawings of the present invention to read the following detailed description. The drawings of the present invention are by way of example to introduce various embodiments of the present invention and to understand how to implement the present invention. The embodiments of the present invention provide sufficient content for those skilled in the art to implement the embodiments disclosed in the present invention, or to implement the embodiments derived from the contents disclosed in the present invention. It should be noted that these embodiments are not mutually exclusive, and some embodiments can be combined with one or more other embodiments to form new embodiments, that is, the implementation of the present invention is not limited to The embodiments disclosed below.

請參閱第一圖,其為本發明較佳實施例單晶粒10點測的示意 圖。晶圓上晶粒進行點測作業時,可以僅單顆晶粒10進行點測作業,單一顆晶粒10接著一顆晶粒10依序進行點測作業,逐步完成整片晶圓測試。單晶粒10上分佈著複數個焊墊(pads)101,分別以探針12針尖121接觸並劃穿氧化層,如第一圖,然後通入電壓或電流,量測晶粒10內的電性特性。雖然單點測試較為準確與便利,但可想見,要完成整片晶圓上所有晶粒的測試是需要花費冗長時間。請參閱第二圖,其為本發明較佳實施例多點測試複數晶粒20的示意圖,每個晶粒上有複數個焊墊,則複數晶粒20的排列與複數探針22的排列如第二圖所示。為了使複數探針22的探針針尖221能夠同時接觸複數焊墊201,需加入某些調整元件來調整複數探針針尖的工作平面。 Please refer to the first figure, which is a schematic diagram of single-die 10-point measurement according to a preferred embodiment of the present invention Figure. When performing the spot testing operation on the die on the wafer, the spot testing operation can be performed on only a single die 10, and a single die 10 followed by a die 10 are sequentially performed on the spot testing operation to gradually complete the entire wafer test. A plurality of pads 101 are distributed on the single die 10, and the tip 121 of the probe 12 is respectively touched and scratched through the oxide layer, as shown in the first picture, and then a voltage or current is applied to measure the electricity in the die 10性性。 Sexual characteristics. Although the single-point test is more accurate and convenient, it is conceivable that it takes a long time to complete the test of all die on the entire wafer. Please refer to the second figure, which is a schematic diagram of a multi-point test for a plurality of die 20 in a preferred embodiment of the present invention. Each die has a plurality of pads. The arrangement of the plurality of die 20 and the arrangement of the plurality of probes 22 are as follows: Shown in the second picture. In order to allow the probe tips 221 of the plurality of probes 22 to simultaneously contact the plurality of pads 201, some adjustment elements need to be added to adjust the working plane of the plurality of probe tips.

請參閱第三圖A,其為本發明較佳實施例測試結構300的示意圖。請參閱第三圖B,其為本發明較佳實施例可應用於流體感測晶片的測試裝置30的示意圖。請參閱第四圖,其為本發明較佳實施例可應用於流體感測晶片的測試設備30’的示意圖。在第四圖中,該測試結構300可安裝於腔體32內。在第三圖B中,該測試裝置30較佳為一點測裝置,其包括一測試結構300、一探針卡37、一傾角調整機構33、一可伸縮具氣密性元件34(例如波紋管,不在此限,以下文中用波紋管來代替說明)等等。在第三圖A中,該測試結構300的內部有一中空區域301,該中空區域301的最佳形狀為錐狀(漏斗狀)並有一較小的下端開口305。測試結構300的外側壁上另有一側壁開口302可向內連通到中空區域301。中空區域301的上方另加一上端開口303,供給取像裝置36(例如鏡頭和相機,但不受此限)使用。在中空區域301與上端開口303之間存有一透明物件304作為隔離,例如一透明鏡片,以防止通入的特定流體39外逸出去並順勢引導特定流體39轉向中空區域301的下端 開口305。 Please refer to the third figure A, which is a schematic diagram of a test structure 300 according to a preferred embodiment of the present invention. Please refer to the third figure B, which is a schematic diagram of a test device 30 that can be applied to a fluid sensing wafer according to a preferred embodiment of the present invention. Please refer to the fourth figure, which is a schematic diagram of a test apparatus 30' that can be applied to a fluid sensing wafer according to a preferred embodiment of the present invention. In the fourth figure, the test structure 300 can be installed in the cavity 32. In the third image B, the test device 30 is preferably a one-point measuring device, which includes a test structure 300, a probe card 37, an inclination adjustment mechanism 33, a retractable airtight element 34 (such as a bellows , Not limited to this, bellows are used in place of instructions below) and so on. In the third image A, the test structure 300 has a hollow region 301 inside, and the hollow region 301 is preferably tapered (funnel shaped) and has a small lower opening 305. The test structure 300 also has a side wall opening 302 on the outer side wall that can communicate inwardly to the hollow region 301. An upper opening 303 is added above the hollow area 301 for the imaging device 36 (such as a lens and a camera, but not limited to this). There is a transparent object 304 between the hollow area 301 and the upper opening 303 as an isolation, such as a transparent lens, to prevent the specific fluid 39 from escaping and guiding the specific fluid 39 toward the lower end of the hollow area 301 口305.

請同時參閱第二圖、第三圖A~B、以及第四圖,將測試裝置30的波紋管(welding bellow)34的法蘭(flange)用螺絲固定於腔體32上方,法蘭內含O型環,迫緊於腔體32表面以防止洩漏氣。測試結構300的中空區域301為空心,兩端均有開口303,305套入於波紋管34中,以上部凸緣(flange)與波紋管凸緣固定緊鎖,凸緣內含O型環,防止流體逸出。測試結構300的一部分深入腔體32中,探針卡37上含有複數個探針370,將探針卡37由下方固定於測試結構300的底部。將傾角調整機構33加裝於測試結構300的上方,以螺絲固定於測試結構300的凸緣上。當系統準備要進行點測作業前,先將晶圓38放置在真空吸盤(chuck)321上,晶圓38由真空吸盤321下方的多軸滑台323由外側先大致移動至探針卡37的下方,利用晶圓38上的對位key進行對位,以多軸滑台323將晶圓38對位完成。在真空吸盤(chuck)321下方加裝一加熱裝置322,可以將真空吸盤321加熱至工作溫度(例如攝氏25~400度之間,不同的流體感應晶片對應有不同的工作溫度),因晶圓38直接置放於真空吸盤321上,所以晶圓38因熱傳導吸熱後亦間接被加熱至工作溫度。測試結構300的上方另行裝置一取像裝置,該取像裝置中的鏡頭36可依實際需要伸入(或未伸入)測試結構300內的上端開口303內,隔著透明鏡片304對焦到晶圓38上複數個晶粒20的複數個焊墊(pads或稱為電極墊或稱接點)201,然後Z軸驅動軸31連結傾角調整機構33帶動整個測試裝置30向下降。 Please refer to the second picture, the third picture A~B, and the fourth picture at the same time. Fix the flange of the welding bellow 34 of the test device 30 above the cavity 32 with screws. The flange contains The O-ring is pressed against the surface of the cavity 32 to prevent leakage of gas. The hollow area 301 of the test structure 300 is hollow, and both ends have openings 303, 305 sleeved in the bellows 34, the upper flange (flange) is fixedly locked with the bellows flange, and the flange contains an O-ring to prevent fluid Escape. A part of the test structure 300 penetrates into the cavity 32. The probe card 37 contains a plurality of probes 370. The probe card 37 is fixed to the bottom of the test structure 300 from below. The tilt adjustment mechanism 33 is installed above the test structure 300 and is fixed on the flange of the test structure 300 with screws. Before the system is ready for spot testing, the wafer 38 is placed on the vacuum chuck 321. The wafer 38 moves from the multi-axis slide 323 under the vacuum chuck 321 from the outside to the probe card 37 Below, the alignment key on the wafer 38 is used for alignment, and the wafer 38 is aligned with the multi-axis slide table 323. A heating device 322 is installed under the vacuum chuck 321, which can heat the vacuum chuck 321 to the working temperature (for example, between 25 and 400 degrees Celsius, different fluid sensing chips have different working temperatures). 38 is directly placed on the vacuum chuck 321, so the wafer 38 is also indirectly heated to the operating temperature after heat absorption due to thermal conduction. An imaging device is additionally arranged above the test structure 300, and the lens 36 in the imaging device can be extended (or not extended) into the upper opening 303 in the test structure 300 according to actual needs, and the lens is focused through the transparent lens 304 A plurality of pads (pads or electrode pads or contacts) 201 of a plurality of crystal grains 20 on the circle 38, and then the Z-axis drive shaft 31 and the inclination angle adjustment mechanism 33 drive the entire test device 30 downward.

測試裝置30被Z軸驅動軸31帶動往下降時,下降的位移量由測試裝置30中的波紋管34被壓縮所吸收,這是因為波紋管34本身具有良好的密封性與伸縮性。當複數探針370的針尖逐漸接觸到晶圓38上晶粒的焊墊 201時,此時鏡頭36中所觀測到的區域內可以看見探針卡37上的探針越來越清晰,接著可以略為調整晶圓38的X軸和Y軸位置,將複數探針370的針尖盡量置放在複數焊墊201的正中央位置,然後再慢慢降下探針卡37,直到複數探針370的針尖與各個複數焊墊201接觸,進而劃穿焊墊201上的氧化層。如果從鏡頭36中發現複數探針370的針尖的排列與相對應的焊墊201排列呈現不等距或明顯發現針尖有傾斜,則使用傾角調整機構33內的調整螺絲進行傾角調整,以確保整排探針370的針尖可以同時接觸到晶圓38上的晶粒。因為測試裝置30中包含波紋管34,波紋管34本身具有良好的密封性與伸縮性,因此可以吸收傾角調整機構33的傾角調整後仍保有氣密性。 When the test device 30 is driven downward by the Z-axis drive shaft 31, the amount of displacement of the drop is absorbed by the bellows 34 in the test device 30 being compressed, because the bellows 34 itself has good sealing and expansion properties. When the tip of the plurality of probes 370 gradually contacts the die pads on the wafer 38 At 201, the probes on the probe card 37 can be seen more and more clear in the area observed in the lens 36, and then the X-axis and Y-axis positions of the wafer 38 can be slightly adjusted, The tip of the pin is placed in the center of the plural pads 201 as much as possible, and then the probe card 37 is slowly lowered until the tip of the plural probes 370 comes into contact with the plural plural pads 201, and then scratches the oxide layer on the pad 201. If it is found from the lens 36 that the arrangement of the needle tips of the plurality of probes 370 and the corresponding arrangement of the pads 201 are not equidistant or that the needle tip is obviously inclined, then use the adjustment screw in the inclination adjustment mechanism 33 to adjust the inclination angle to ensure the adjustment. The tip of the row probe 370 can simultaneously contact the die on the wafer 38. Because the testing device 30 includes the bellows 34, the bellows 34 itself has good sealing and stretchability, so it can absorb the inclination adjustment mechanism 33 after adjusting the inclination angle and still maintain airtightness.

接著將特定流體39由腔體32外部透過流體管路35,將特定流體39噴向測試結構300中的側壁開口302,因為測試結構300的上方為透明物件304所封閉,所以注入的該特定流體39為透明物件304所擋,故轉而順勢向下流動,該特定流體39的流體流向390如第四圖所示,該特定流體39經由測試結構300的下端開口305流出測試結構300而繼續向下流向複數探針370的針尖和晶圓38上晶粒的複數焊墊201,此時該區域附近充滿該特定流體39,且濃度約相當於輸入時的流體濃度。從外部容器輸入該特定流體39到測試裝置30內再到探針卡37上的複數探針370的針尖區域所需花費的時間只需要幾秒鐘。如果將特定流體39直接灌入腔體32中,等腔體32中慢慢充滿該特定流體39,經計算評估後會花費相對較長的時間,大約數分鐘到數十分鐘,依據腔體32大小而定,才能等到複數探針370的針尖與晶粒的複數焊墊201的區域充滿該特定流體39,且要一直等待到該特定流體39的濃度達到理想的點測測試所需要的濃度。而使用本揭示的測試裝置30的優點是可 快速達到標準測試所需的流體濃度。這時,經由外部電路控制輸入電流或電壓,以量測晶粒的電性特性,藉以測試該等流體感測晶片的感測靈敏度與正確性,是否符合原先設計之規範。由Z軸驅動軸31快速進行微小距離(例如約100μm~1000μm)的上下往覆振動,此時複數探針370的針尖與晶圓38上晶粒的複數焊墊201呈現快速接觸或分離狀態,再配合下方的多軸滑台的XY θ軸的平移與旋轉,就可以快速地完成晶圓38上所有晶粒的多晶片(陣列)點測作業。 Next, the specific fluid 39 is passed through the fluid line 35 from the outside of the cavity 32, and the specific fluid 39 is sprayed toward the sidewall opening 302 in the test structure 300. Because the transparent structure 304 is closed above the test structure 300, the specific fluid injected 39 is blocked by the transparent object 304, so it turns to flow downward. The fluid flow direction 390 of the specific fluid 39 is shown in the fourth figure. The specific fluid 39 flows out of the test structure 300 through the lower opening 305 of the test structure 300 and continues toward Downstream to the tip of the plurality of probes 370 and the plurality of pads 201 of the die on the wafer 38, the vicinity of this area is filled with the specific fluid 39, and the concentration is approximately equivalent to the fluid concentration at the time of input. The time required to input the specific fluid 39 from the external container into the test device 30 to the needle tip area of the plurality of probes 370 on the probe card 37 takes only a few seconds. If the specific fluid 39 is directly poured into the cavity 32, and the cavity 32 is slowly filled with the specific fluid 39, it will take a relatively long time after calculation and evaluation, about several minutes to tens of minutes, depending on the cavity 32 Depending on the size, it is necessary to wait until the tip of the plurality of probes 370 and the area of the plurality of pads 201 of the die are filled with the specific fluid 39, and wait until the concentration of the specific fluid 39 reaches the desired concentration for the spot test. The advantage of using the test device 30 of the present disclosure is that Quickly reach the fluid concentration required for standard testing. At this time, the input current or voltage is controlled by an external circuit to measure the electrical characteristics of the die, so as to test whether the sensitivity and correctness of the fluid sensing chips meet the original design specifications. The Z-axis driving shaft 31 rapidly vibrates up and down at a small distance (for example, about 100 μm to 1000 μm). At this time, the tip of the plural probe 370 and the plural pads 201 of the die on the wafer 38 are in rapid contact or separation. Together with the translation and rotation of the XY θ axis of the multi-axis slide table below, the multi-chip (array) spot measurement operation of all the dies on the wafer 38 can be quickly completed.

請同時參閱第二圖、第三圖A~B、以及第四圖。該可伸縮具氣密性元件34可環接於該測試結構300的外壁306之外,與測試結構300的外壁306保有一空隙307。該測試結構300、該傾角調整機構33、及該可伸縮具氣密性元件彼此間結合,其結合方式包括:該測試結構300分別與該可伸縮具氣密性元件與該傾角調整機構33結合;或是該可伸縮具氣密性元件分別與該測試結構300與該傾角調整機構33結合;或是該傾角調整機構33分別與該可伸縮具氣密性元件34與該測試結構300結合。該特定流體可為CO,H2S,H2,NH3,C2H5OH的至少其中之一,也可為其它流體,例如可以是保護性氣體,如N2,但並不在此限。 Please refer to the second picture, the third picture A~B, and the fourth picture at the same time. The telescopic airtight element 34 can be looped outside the outer wall 306 of the test structure 300 and maintain a gap 307 with the outer wall 306 of the test structure 300. The test structure 300, the tilt adjustment mechanism 33, and the telescopic airtightness element are combined with each other, and the combination method includes: the test structure 300 is respectively combined with the telescoping airtightness element and the tilt adjustment mechanism 33 Either the telescopic airtight element is combined with the test structure 300 and the tilt adjustment mechanism 33; or the tilt angle adjustment mechanism 33 is combined with the telescopic air tight element 34 and the test structure 300, respectively; The specific fluid may be at least one of CO, H 2 S, H 2 , NH 3 , C 2 H 5 OH, or other fluids, such as a protective gas, such as N 2 , but not limited thereto .

請參閱第五圖A,其為本發明另一較佳實施例測試結構500的示意圖。請參閱第五圖B,其為本發明另一較佳實施例測試裝置50的示意圖。請參閱第六圖,其為本發明另一較佳實施例可應用於流體感測晶片的測試設備50’的示意圖。在第六圖中,該測試結構500可安裝於腔體52上。在第五圖B中,該測試裝置50較佳為一點測裝置,其包括一測試結構500、一探針卡57、一傾角調整機構53、一可伸縮具氣密性元件(例如波紋管54,不 在此限,以下文中用波紋管54來代替說明)等等。在第五圖A中,該測試結構500的內部有一中空區域501,該中空區域501的最佳形狀為錐狀(漏斗狀)並有一較小的下端開口505。測試結構500的外側壁上另有一側壁開口502可向內連通到中空區域501。中空區域501的上方為一封閉區域,阻隔該特定流體59往上方流動,以防止通入的特定流體59外逸出去並順勢引導特定流體59轉向中空區域501的下端開口505。 Please refer to the fifth figure A, which is a schematic diagram of a test structure 500 according to another preferred embodiment of the present invention. Please refer to the fifth diagram B, which is a schematic diagram of a test device 50 according to another preferred embodiment of the present invention. Please refer to the sixth figure, which is a schematic diagram of another preferred embodiment of the present invention that can be applied to a fluid sensing wafer test device 50'. In the sixth figure, the test structure 500 can be installed on the cavity 52. In the fifth diagram B, the test device 50 is preferably a one-point measuring device, which includes a test structure 500, a probe card 57, an inclination adjustment mechanism 53, and a retractable airtight element (such as a bellows 54 ,Do not In this limit, the bellows 54 will be used instead of the description below) and so on. In the fifth diagram A, the test structure 500 has a hollow region 501 inside, and the hollow region 501 is preferably tapered (funnel shaped) and has a small lower opening 505. The test structure 500 further has a side wall opening 502 on the outer side wall that can communicate inwardly to the hollow region 501. Above the hollow area 501 is a closed area, which blocks the flow of the specific fluid 59 upward, so as to prevent the specific fluid 59 from flowing out and guide the specific fluid 59 toward the lower opening 505 of the hollow area 501.

請同時參閱第二圖、第五圖A~B、以及第六圖,將測試裝置50的波紋管(welding bellow)54的法蘭(flange)用螺絲固定於腔體52上方,法蘭內含O型環,迫緊於腔體52表面以防止洩漏氣。測試結構500套入於波紋管54中,以上部凸緣(flange)與波紋管凸緣固定緊鎖,測試結構500的一部分深入腔體52中,探針卡57上含有複數個探針570,將探針卡57由下方固定於測試結構500的底部。將傾角調整機構53加裝於測試結構500的上方,以螺絲固定於測試結構500的上方凸緣。當系統準備要進行點測作業前,先將晶圓58放置在真空吸盤(chuck)521上,晶圓58由真空吸盤521下方的多軸滑台523由外側先大致移動至探針卡57的下方,利用晶圓58上的對位key進行對位,以多軸滑台523將晶圓58對位完成。在晶圓58真空吸盤(chuck)521下方加裝一加熱裝置522,可以將真空吸盤521加熱至工作溫度(例如攝氏25-400度之間,不同的流體感應晶片對應有不同的工作溫度),因晶圓58直接置放於真空吸盤521上,所以晶圓58因熱傳導吸熱後亦間接被加熱至工作溫度。在腔體52外部架設一高倍率放大鏡組(圖中未顯示),隔著腔體52的透明窗口,對焦至晶圓探針卡57的複數個探針570的針尖區域。然後Z軸驅動軸51連結傾角調整機構53帶動整個測試裝置50向下降 Please refer to the second picture, the fifth picture A~B, and the sixth picture at the same time, the flange (flange) of the bellows 54 of the testing device 50 is screwed on the cavity 52, the flange contains The O-ring is pressed against the surface of the cavity 52 to prevent leakage of gas. The test structure 500 is nested in the corrugated tube 54 and the upper flange is fixedly locked with the corrugated tube flange. A part of the test structure 500 penetrates into the cavity 52 and the probe card 57 contains a plurality of probes 570. The probe card 57 is fixed to the bottom of the test structure 500 from below. The tilt adjustment mechanism 53 is installed above the test structure 500 and is fixed to the upper flange of the test structure 500 with screws. Before the system is ready for spot testing, the wafer 58 is placed on the vacuum chuck 521. The wafer 58 is moved from the multi-axis slide 523 below the vacuum chuck 521 from the outside to the probe card 57. Below, the alignment key on the wafer 58 is used for alignment, and the wafer 58 is aligned with the multi-axis slide table 523. A heating device 522 is installed under the vacuum chuck 521 of the wafer 58 to heat the vacuum chuck 521 to the working temperature (for example, between 25-400 degrees Celsius, different fluid sensing chips have different working temperatures), Since the wafer 58 is directly placed on the vacuum chuck 521, the wafer 58 is also indirectly heated to the operating temperature after heat absorption due to thermal conduction. A high-magnification magnifier group (not shown in the figure) is set up outside the cavity 52 to focus on the needle tip area of the plurality of probes 570 of the wafer probe card 57 through the transparent window of the cavity 52. Then, the Z-axis drive shaft 51 and the inclination adjustment mechanism 53 drive the entire test device 50 downward

測試裝置50被Z軸驅動軸51帶動往下降時,下降的位移量由測試裝置50中的波紋管54被壓縮所吸收,這是因為波紋管54本身具有良好的密封性與伸縮性。當複數探針570的針尖逐漸接觸到晶圓58上晶粒的焊墊201時,此時從高倍率放大鏡組中所觀測到的區域內可以看見探針卡57上的探針和晶圓上晶粒的焊墊越來越清晰,接著可以略為調整晶圓58的X軸Y軸位置,將複數探針570的針尖盡量置放在各個複數焊墊201的正中央位置,然後再慢慢降下探針卡57,直到複數探針570的針尖與各個複數焊墊201接觸,進而劃穿焊墊201上的氧化層。如果從高倍率放大鏡組中發現複數探針570的針尖的排列與相對應的焊墊201排列呈現不等距或明顯發現針尖有相對傾斜時,則使用傾角調整機構53內的調整螺絲進行傾角調整,以確保整排探針570的針尖可以同時接觸到晶圓58上的晶粒。因為測試裝置50中包含波紋管54,波紋管54本身具有良好的密封性與伸縮性,因此可以吸收傾角調整機構53的傾角調整後仍保有氣密性。 When the test device 50 is driven downward by the Z-axis drive shaft 51, the amount of the downward displacement is absorbed by the bellows 54 in the test device 50 being compressed, because the bellows 54 itself has good sealing and expansion properties. When the tip of the plurality of probes 570 gradually contacts the pad 201 of the die on the wafer 58, the probe on the probe card 57 and the wafer can be seen from the area observed in the high-magnification magnifier group The pads of the die are getting clearer and clearer, and then the X-axis and Y-axis positions of the wafer 58 can be slightly adjusted, and the tip of the plural probe 570 can be placed as far as possible in the center of each plural solder pad 201, and then slowly lowered The probe card 57 until the tip of the plurality of probes 570 comes into contact with each of the plurality of pads 201, and then scratches the oxide layer on the pad 201. If the arrangement of the needle tips of the multiple probes 570 and the corresponding arrangement of the pads 201 are not equidistant from the high-magnification magnifier group, or if the needle tips are relatively inclined, then use the adjustment screw in the inclination adjustment mechanism 53 to adjust the inclination angle , To ensure that the tips of the entire row of probes 570 can simultaneously contact the die on the wafer 58. Since the testing device 50 includes the bellows 54 and the bellows 54 itself has good sealing and stretchability, it can absorb the inclination of the inclination adjusting mechanism 53 and still maintain airtightness after adjustment.

接著將特定流體59由腔體52外部透過流體管路55,將特定流體59噴向測試結構500中的側壁開口502,因為測試結構500的上方為封閉區域,所以注入的該特定流體59轉而順勢向下流動,該特定流體59的流體流向590如第五圖所示,該特定流體59經由測試結構500的下端開口505流出測試結構500而繼續向下流向複數探針570的針尖和晶圓58上晶粒的複數焊墊201,此時該區域附近充滿該特定流體59,且濃度約相當於輸入時的流體濃度。從外部容器輸入該特定流體59到測試裝置50內再到探針卡57上的複數探針570的針尖區域所需花費的時間只需要幾秒鐘。如果將特定流體59直接灌入腔體52中,等腔體52中慢慢充滿該特定流體59,經計算評估後會花費 相對較長的時間,大約數分鐘到數十分鐘,依據腔體52大小而定,才能等到複數探針570的針尖與晶粒的複數焊墊201的區域充滿該特定流體59,且要一直等待到該特定流體59的濃度達到理想的點測測試所需要的濃度。而使用本揭示的測試裝置50的優點是可快速達到標準測試所需的流體濃度。這時,經由外部電路控制輸入電流或電壓,以量測晶粒的電性特性,藉以測試該等流體感測晶片的感測靈敏度與正確性,是否符合原先設計之規範。由Z軸驅動軸51快速進行微小距離(約100μm~1000μm的上下往覆振動,此時複數探針570的針尖與晶圓58上晶粒的複數焊墊201呈現快速接觸或分離狀態,再配合晶圓下方的多軸滑台的XY θ軸的平移與旋轉,就可以快速地完成晶圓58上所有晶粒的多晶片(陣列)點測作業。 Next, the specific fluid 59 is passed through the fluid line 55 from the outside of the cavity 52, and the specific fluid 59 is sprayed toward the side wall opening 502 in the test structure 500. Because the upper part of the test structure 500 is a closed area, the injected specific fluid 59 turns Downward flow, the flow direction of the specific fluid 59 flows as shown in the fifth figure, the specific fluid 59 flows out of the test structure 500 through the lower opening 505 of the test structure 500 and continues to flow downward to the tip of the plurality of probes 570 and the wafer The plural pads 201 of the die on the 58 are filled with the specific fluid 59 near the area, and the concentration is approximately equivalent to the fluid concentration at the time of input. The time required to input the specific fluid 59 from the external container into the test device 50 to the needle tip area of the plural probes 570 on the probe card 57 only takes a few seconds. If the specific fluid 59 is directly poured into the cavity 52, and the cavity 52 is slowly filled with the specific fluid 59, it will cost after calculation and evaluation A relatively long time, from several minutes to several tens of minutes, depending on the size of the cavity 52, can only wait until the tip of the plurality of probes 570 and the area of the plurality of pads 201 of the die are filled with the specific fluid 59, and have to wait The concentration of the specific fluid 59 reaches the desired concentration required for the spot test. The advantage of using the testing device 50 of the present disclosure is that the fluid concentration required for standard testing can be quickly reached. At this time, the input current or voltage is controlled by an external circuit to measure the electrical characteristics of the die, thereby testing whether the sensitivity and accuracy of the fluid sensing chips meet the original design specifications. The Z-axis drive shaft 51 rapidly vibrates up and down at a small distance (about 100 μm to 1000 μm). At this time, the tip of the multiple probe 570 and the multiple pads 201 of the die on the wafer 58 are in rapid contact or separation, and then cooperate The translation and rotation of the XY θ axis of the multi-axis slide table under the wafer can quickly complete the multi-chip (array) spot measurement operation of all the dies on the wafer 58.

提出於此之本揭露多數實施例,將對於熟習本項技藝者理解到具有呈現於上述說明與相關圖式之教導的益處。因此,吾人應理解到本揭露並非受限於所揭露之特定實施例,而變形例與其他實施例意圖是包含在以下的申請專利範圍之範疇之內。 Most of the embodiments disclosed herein will be of benefit to those skilled in the art to have the teachings presented in the above description and related drawings. Therefore, I should understand that the present disclosure is not limited to the specific embodiments disclosed, and that variations and other embodiments are intended to be included within the scope of the following patent applications.

30:測試裝置 30: Test device

300:測試結構 300: test structure

33:傾角調整裝置 33: Tilt adjustment device

34:可伸縮具氣密性元件 34: Retractable airtight components

37:探針卡 37: Probe card

301:中空區域 301: Hollow area

302:側壁開口 302: sidewall opening

305:下端開口 305: lower opening

306:外壁 306: outer wall

Claims (12)

一種用於測試一電子元件的測試裝置,包含:一測試結構,具有一內部中空區域以及一外壁,該內部中空區域具有一側壁開口與一下端開口;一可伸縮具氣密性元件,係安置於該測試結構的外側;一傾角調整機構;以及一探針卡,配置於該測試結構的該下端開口,其中一特定流體由該側壁開口進入該內部中空區域並由該下端開口流出並流向該探針卡。 A testing device for testing an electronic component, comprising: a testing structure with an inner hollow area and an outer wall, the inner hollow area has a side wall opening and a lower end opening; a retractable airtight component is arranged On the outside of the test structure; an inclination adjustment mechanism; and a probe card, which is arranged at the lower end opening of the test structure, wherein a specific fluid enters the inner hollow area from the side wall opening and flows out from the lower end opening and flows toward the Probe card. 如申請專利範圍第1項所述的測試裝置,其中該電子元件為一半導體晶片。 The test device as described in item 1 of the patent application range, wherein the electronic component is a semiconductor chip. 如申請專利範圍第1項所述的測試裝置,其中該電子元件為一流體感測晶片。 The test device as described in item 1 of the patent application range, wherein the electronic component is a fluid sensing chip. 如申請專利範圍第1項所述的測試裝置,其中該可伸縮具氣密性元件為一波紋管。 The test device as described in item 1 of the patent application scope, wherein the telescopic airtight element is a bellows. 如申請專利範圍第1項所述的測試裝置,其中該可伸縮具氣密性元件環接於該測試結構的外側,且與該測試結構的外側保有一空隙。 The test device as described in item 1 of the patent application scope, wherein the telescopic airtight element is looped to the outside of the test structure and maintains a gap with the outside of the test structure. 如申請專利範圍第1項所述的測試裝置,其中:該探針卡上安裝有複數個探針。 The test device as described in item 1 of the patent application scope, wherein a plurality of probes are installed on the probe card. 如申請專利範圍第1項所述的測試裝置,其中該可伸縮具氣密性元件吸收因該測試結構之受外力所產生之位移量並同時保有該測試裝置的氣密性。 The test device as described in item 1 of the patent application scope, wherein the telescopic airtight element absorbs the displacement caused by the external force of the test structure while maintaining the airtightness of the test device. 如申請專利範圍第1項所述的測試裝置,其中該可伸縮具氣密性元件吸收因該傾角調整機構進行傾角調整時所產生之移動量並同時保有該測試裝置 的氣密性。 The test device as described in item 1 of the patent application scope, wherein the retractable gas-tight element absorbs the amount of movement caused by the tilt angle adjustment mechanism during tilt angle adjustment while retaining the test device Airtightness. 如申請專利範圍第1項所述的測試裝置,其中該傾角調整機構可連動式對該探針卡進行傾角調整。 The test device as described in item 1 of the patent application scope, wherein the tilt angle adjustment mechanism can adjust the tilt angle of the probe card in a linked manner. 如申請專利範圍第1項所述的測試裝置,其中該測試結構分別與該可伸縮具氣密性元件與該傾角調整機構結合。 The test device as described in item 1 of the patent application scope, wherein the test structure is respectively combined with the telescopic airtight element and the inclination adjustment mechanism. 如申請專利範圍第1項所述的測試裝置,其中該可伸縮具氣密性元件分別與該測試結構與該傾角調整機構結合。 The test device as described in item 1 of the patent application scope, wherein the telescopic airtight element is respectively combined with the test structure and the tilt adjustment mechanism. 如申請專利範圍第1項所述的測試裝置,其中該傾角調整機構分別與該可伸縮具氣密性元件與該測試結構結合。 The test device as described in item 1 of the patent application scope, wherein the inclination adjustment mechanism is respectively combined with the retractable airtight element and the test structure.
TW107145519A 2018-12-17 2018-12-17 Multi-probing device TWI687691B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW107145519A TWI687691B (en) 2018-12-17 2018-12-17 Multi-probing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107145519A TWI687691B (en) 2018-12-17 2018-12-17 Multi-probing device

Publications (2)

Publication Number Publication Date
TWI687691B true TWI687691B (en) 2020-03-11
TW202024642A TW202024642A (en) 2020-07-01

Family

ID=70767208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107145519A TWI687691B (en) 2018-12-17 2018-12-17 Multi-probing device

Country Status (1)

Country Link
TW (1) TWI687691B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040119463A1 (en) * 2002-12-18 2004-06-24 Star Technologies Inc. Probe card for testing a semiconductor
WO2014007084A1 (en) * 2012-07-02 2014-01-09 東京エレクトロン株式会社 Semiconductor inspection system and method for preventing condensation at interface part
TW201403095A (en) * 2012-06-18 2014-01-16 Sharp Kk Inspection device
TWI614101B (en) * 2017-03-15 2018-02-11 中華精測科技股份有限公司 Probe suction device
TW201843471A (en) * 2017-03-07 2018-12-16 日商東京威力科創股份有限公司 Detection device and contact method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040119463A1 (en) * 2002-12-18 2004-06-24 Star Technologies Inc. Probe card for testing a semiconductor
TW201403095A (en) * 2012-06-18 2014-01-16 Sharp Kk Inspection device
WO2014007084A1 (en) * 2012-07-02 2014-01-09 東京エレクトロン株式会社 Semiconductor inspection system and method for preventing condensation at interface part
TW201843471A (en) * 2017-03-07 2018-12-16 日商東京威力科創股份有限公司 Detection device and contact method
TWI614101B (en) * 2017-03-15 2018-02-11 中華精測科技股份有限公司 Probe suction device

Also Published As

Publication number Publication date
TW202024642A (en) 2020-07-01

Similar Documents

Publication Publication Date Title
KR100665407B1 (en) Probe device that controls temperature of object to be inspected and probe inspection method
US9057757B2 (en) Testing of electroluminescent semiconductor wafers
CN101498764A (en) Probe apparatus, probing method and storage medium
JP6674103B2 (en) Prober
JP2010113355A (en) Variable magnification optics with spray cooling
US8040146B2 (en) Inspection apparatus having a heating mechanism for performing sample temperature regulation
US11054465B2 (en) Method of operating a probing apparatus
TWI687691B (en) Multi-probing device
JP2004128509A (en) Prober for testing substrate at low temperature
JPH10321686A (en) Burn-in device
CN103033446A (en) Solderball test device
US10373795B2 (en) Integrated circuit analysis systems and methods with localized evacuated volume for e-beam operation
JP6361975B2 (en) Prober
CN104620121B (en) Probe device
US9030658B1 (en) Multi-resolution optical probing system having reliable temperature control and mechanical isolation
US8873032B1 (en) Optical probing system having reliable temperature control
JP2005268280A (en) Vacuum probe apparatus and vacuum probing method
JP5571224B2 (en) Needle tip position detection device and probe device
TW201816407A (en) Chip probing apparatus and chip probing method
US9182580B1 (en) Optical probe system having accurate positional and orientational adjustments for multiple optical objectives
JPH05166893A (en) Probe card inspecting device
JP2008053282A (en) Prober
JP4729056B2 (en) Inspection stage for vacuum probe equipment
JP7362507B2 (en) Electronic component transport device, electronic component inspection device, and pocket position detection method
JP4266133B2 (en) Inspection method for inspecting electrical characteristics of an object to be inspected formed on a wafer-like substrate under vacuum