JPS62104001A - Resistance material - Google Patents
Resistance materialInfo
- Publication number
- JPS62104001A JPS62104001A JP60243722A JP24372285A JPS62104001A JP S62104001 A JPS62104001 A JP S62104001A JP 60243722 A JP60243722 A JP 60243722A JP 24372285 A JP24372285 A JP 24372285A JP S62104001 A JPS62104001 A JP S62104001A
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- weight
- glass
- fluoride
- resistance
- resistor
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、非酸化雰囲気中での焼成によって厚膜抵抗体
又はこれに類似の抵抗体′に形成することができ、且つ
耐湿性の高い抵抗体を提供することができるペースト状
抵抗材料に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a resistor which can be formed into a thick film resistor or a similar resistor by firing in a non-oxidizing atmosphere and which has high moisture resistance. The present invention relates to a paste-like resistance material capable of providing a resistor.
未焼成セラミックシート即ちグリーンシートにニッケル
等の卑金楕の導体ペース)k塗布し、且つ硼化モリブデ
ンと弗化物とガラスと紮含有する抵抗体ペースト會塗布
したものを非酸化雰囲気中で焼成し、Js膜導体と厚膜
抵抗体との両刀を有する多層セラミック回路基依荀作成
する方法をゴ1本件出願人に係わる特願昭59−197
655号明細1に開示されて(゛る。この方法にお(゛
ては、厚膜導体及び厚膜抵わしの形成にt金株が使用さ
れないので、多層セラミック回路基鈑のコストの低減が
できる。An unfired ceramic sheet, i.e., a green sheet, coated with a conductive paste of base metal such as nickel, and coated with a resistor paste containing molybdenum boride, fluoride, glass, and silica, is fired in a non-oxidizing atmosphere. , a method for creating a multilayer ceramic circuit board having both JS film conductor and thick film resistor
No. 655 Specification 1 (1). This method reduces the cost of multilayer ceramic circuit boards because no metal stock is used to form the thick film conductors and thick film resistors. can.
しかし、上記出願に係わる抵抗材料で形成され皮厚膜抵
抗は十分な耐を髭特性紮有さない。例えば。However, the thick film resistor formed from the resistive material according to the above application does not have sufficient resistance characteristics. for example.
温度60℃、相対湿度95%の環境下に1000時間放
置した場合の抵抗変化率は+5%〜中10%程度になる
。When left for 1000 hours in an environment with a temperature of 60° C. and a relative humidity of 95%, the rate of change in resistance will be about +5% to about 10%.
そこで1本発明の目的は、非酸化雰囲気中での焼成で抵
抗体に形成することができ、且つ耐湿試験における抵抗
変化率が±2%以内の抵抗体を得るCとができる抵抗材
料を提供するCとにある。Therefore, one object of the present invention is to provide a resistor material that can be formed into a resistor by firing in a non-oxidizing atmosphere and that can yield a resistor with a resistance change rate within ±2% in a moisture test. It is in C.
上記目的を達成するための本発明に係わる抵抗材料は、
硼化タングステン20〜70重量うと。The resistance material according to the present invention for achieving the above object is as follows:
Tungsten boride 20-70% weight.
1ラス10〜60ムt%と、弗化刀ルシウム(CaFt
) 、 %化ストロンチウム(Srl;’、 ) 、
及び弗化バリウム(BaF*)σノ内の少なくとも1
種の弗化物5〜501量%と、炭酸カルシウム((?a
CUa ) 、炭酸スト07テウム(5reos) 、
炭酸バリウム(BaeC)3)の内の少なくとも1棟の
炭酸塩10〜60′BI:量%と刀4ら成る混合物の粉
末と、イ1重結合剤と、浴剤とから成る。10 to 60 μt% per lath and lucium fluoride (CaFt
), strontium chloride (Srl;', ),
and barium fluoride (BaF*) at least 1 within σ
Seed fluoride 5-501% by weight and calcium carbonate ((?a
CUa), carbonate 07teum (5reos),
It consists of a powder of a mixture consisting of at least one carbonate of barium carbonate (BaeC) 10 to 60'BI:% by weight, a double binder, and a bath agent.
上記組成のペースト状抵抗材料をグリーンシート上に印
刷し、非酸化雰囲気で焼成てれは、耐湿試験における抵
抗変化率が±2%以内の厚膜抵抗体が得られる。従って
、ニッケル等の卑金用の導体ペーストによる厚膜導体の
形成と同時に卑金属厚膜抵抗?形成するCとが出来ろ。When a paste-like resistive material having the above composition is printed on a green sheet and fired in a non-oxidizing atmosphere, a thick film resistor having a resistance change rate within ±2% in a moisture resistance test can be obtained. Therefore, at the same time as a thick film conductor is formed using a conductor paste for base metal such as nickel, is it possible to form a base metal thick film resistor? You can form C.
〔実施例1〕
次に1本発明の実施例に係わる抵抗材料及びこtlに便
用した多層セラミック回路基猿σ、)形成方法につ(゛
1述べる。[Embodiment 1] Next, a method for forming a resistor material and a multilayer ceramic circuit base σ) according to an embodiment of the present invention will be described.
まず、二酸化珪素(5t(J、 ) 78−Oik M
h、酸化亜鉛(Zn(JJ 5.5 kn部、酸化ジ
ルコニラA (Zro、 )12.0 亀Jt &z、
炭酸7フルシウム(CaCQ、) 3.Og骨部、及び
酸化アルミニウム(Alt(Jm ) 1゜51L量部
ケ混合し9アルミナルツボ中、1400℃で30分間溶
融し、こり溶融液ケ水中に投入し、弁、冷乎ぜ九。Cの
急冷物全櫓り出してアルミナ乳鉢に入れ。First, silicon dioxide (5t(J, ) 78-Oik M
h, zinc oxide (Zn (JJ 5.5 kn part, zirconia oxide A (Zro, ) 12.0 Kame Jt &z,
Flucium 7 carbonate (CaCQ, ) 3. Mix Og bones and 1°51 L parts of aluminum oxide (Alt(Jm)), melt in an aluminum crucible at 1400°C for 30 minutes, pour the molten liquid into water, cool it with a valve. Take out all the quenched material and put it in an alumina mortar.
約5 Q It m稈度になるまで粉砕し、更にこれを
エタノールと共にポリエチレン製ボットミルの中に入れ
、アルミナボールで150時間粉砕し1粒径が10μn
1以下の粉末状のガラスを得九。The powder was ground to a culm size of approximately 5 Q It m, then placed in a polyethylene bot mill with ethanol, and ground with alumina balls for 150 hours until the particle size was 10 μn.
Obtain powdered glass with a particle size of 1 or less.
次に、上記ガラスと、硼化タングステン(W、B、we
lw、B、の内の1抛以−ヒ)と、弗化物((?aF、
。Next, the above glass and tungsten boride (W, B, we
lw, B, one of them) and fluoride ((?aF,
.
SrF’オ、 l1aF、の内の1種以上)とr表に示
す割合に秤量し、ボールミルに入れて攪拌した。次(゛
で。One or more of SrF'O, l1aF, etc.) were weighed in the proportions shown in Table R, and the mixture was placed in a ball mill and stirred. Next (at ゛.
cn2アルゴンカス雰囲気中1200℃で1時間熱処理
し、しかる後、エタノールと共にポリエチレン製のホッ
トミル中に入れ、アルミナボールで24時間粉砕し、1
0μm以下の硼化タングステンとガラスと弗化物との混
合物の粉末上寿た。即ち、表の試料A1〜32に示され
ている種々の割合のガラスと硼化タングステンと弗化物
との混合粉末ゲ得た。The mixture was heat-treated at 1200°C for 1 hour in a cn2 argon gas atmosphere, then placed in a polyethylene hot mill with ethanol, and ground with alumina balls for 24 hours.
Powdered powder of a mixture of tungsten boride, glass, and fluoride with a diameter of 0 μm or less. That is, mixed powders of glass, tungsten boride, and fluoride in various proportions shown in Samples A1 to 32 in the table were obtained.
次に、ガラスと1jJl化タングステンと弗化物と炭酸
塩(CaCC)、、 8rCCJ、、 BaC0,の内
の1棟以上)との重量割合が表σノ拭科鳥1〜32の組
成の欄に示すようになるように、上述のガラスと硼化タ
ングステンと弗化物との混合粉末に対して炭酸塩上添加
し、混合′″f′ろことにより1本発明に係わる抵抗材
料Ct)混合物の粉末葡得た。即ち、試料点1にお(・
工は、抵抗材料の混合物の組成ケガ2フ10重i%、W
、l:l 207JLt!−%、CaFt l OIi
jjk’lc 、 C:aCoz60重t%とし、残
りの試料点2〜32においても組成の欄に示j重量割合
の組成とした。Next, the weight ratio of glass and one or more of tungsten chloride, fluoride, and carbonate (CaCC), 8rCCJ, BaC0, is shown in the composition column of Table 1-32. As shown, by adding carbonate to the above-mentioned mixed powder of glass, tungsten boride, and fluoride, and mixing by filtration, a powder of the resistance material Ct) mixture according to the present invention is obtained. That is, at sample point 1 (・
The composition of the mixture of resistance materials is 10% by weight, W
, l:l 207JLt! −%, CaFt l OIi
jjk'lc, C:aCoz was set at 60% by weight, and the remaining sample points 2 to 32 also had the compositions shown in the composition column.
次に、各試料の抵抗材料σ)混合物の粉末100ik:
ht部に、有機結合剤とし工のエチルセルロース10m
ffR1’浴剤としてのブチルカルピトール90″M量
部に浴かしたもσノから成る有機バインター110ちと
とクル25N量部紮加えて3本ロールミルで混練して約
800ボイズの抵抗体ペーストを得た。Next, each sample's resistance material σ) powder 100ik of the mixture:
In the h part, 10 m of ethyl cellulose, an organic binder, is added.
ffR1'90"M parts of butyl calpitol as a bath agent was bathed with 110 parts of an organic binder made from sigma, and 25N parts of chitokuru were added thereto and kneaded in a three-roll mill to form a resistor paste with about 800 voids. Obtained.
一力、上記抵抗体ペース)k印刷するためりグリーンシ
ート紮次の方法で作製した。AI、U、粉末50 mi
fm、 Sin、粉末20 m曾部、SrU粉禾25″
I4L−m部、Li、(J粉床xifLi1部、及びM
gO粉末4重11・うなるセラミック原料粉末と、アク
リル酸エステルポリマーの水溶液〃≧らなるバインダー
と。The above-mentioned resistor paste) was printed on a green sheet by the following method. AI, U, powder 50 mi
fm, Sin, powder 20 m section, SrU powder 25''
I4L-m part, Li, (J powder bed xifLi 1 part, and M
A binder consisting of gO powder 4-fold 11-glow ceramic raw material powder and an aqueous solution of acrylic acid ester polymer.
グリセリンと、カルボン酸塩及び水と葡それぞれボール
ミルに入れて混合して、スリップを作製し。Glycerin, carboxylic acid salt, water, and grapes were placed in a ball mill and mixed to make a slip.
脱泡処理した後にドクターブレード法により卑さ200
ρmの長尺のグリーンシートを作製し次。After degassing treatment, the degree of baseness is 200 by the doctor blade method.
Next, a long green sheet of ρm is prepared.
そし工、このグリーンシートから、9 mm X 9
mmと6 mm X 9 mmの2種類のグリーンシー
ト片を切シ抜いた。From this green sheet, 9 mm x 9
Two types of green sheet pieces, 2 mm and 6 mm x 9 mm, were cut out.
次に、第1図に示す如く、前者のグリーンシート片山上
に、ニッケル(Ni)粉末と有機バインダ浴g(エチル
セルロース10重量部にテレピン油907[置部に溶か
したもの)とに3:1の比で混練り次4体ペース)’に
200メツシユのスクリーンを用いて印刷し、125℃
、10分間乾燥するCとによって第1図に示す如くNi
導体膜(2)を形成した。Next, as shown in Fig. 1, nickel (Ni) powder and an organic binder bath (g (10 parts by weight of ethyl cellulose dissolved in 907 parts by weight of turpentine oil) were mixed in a 3:1 mixture of nickel (Ni) powder and an organic binder bath (10 parts by weight of ethyl cellulose and 907 parts by weight of turpentine) on top of a stack of the former green sheets. Knead at a ratio of
, C and dry for 10 minutes as shown in Figure 1.
A conductive film (2) was formed.
次に1本発明に係わる抵抗体ペーストを導体ペーストと
同様にスクリーン印刷し、乾燥することによって、第1
図に示す如く抵抗体膜(31全形成し次。Next, a resistor paste according to the present invention is screen printed in the same manner as the conductor paste and dried.
As shown in the figure, the resistor film (31) is completely formed.
次に、グリーンシート片111の上に#J1WMで示す
大きさの本う一万のグリーンシート片(41會積層し。Next, on top of the green sheet piece 111, 100,000 more green sheet pieces (41 pieces) of the size indicated by #J1WM were laminated.
100℃、150 kg/cm″で熱圧着し、コレラ酸
化雰囲気中500℃で熱処理して′4E4機結合剤及び
溶剤(有機ビヒクル)を飛散及び分解し、N、(98,
5容積%) 十He (1,5容N%)の還元雰囲気中
で1100℃、2時間焼成し、第2図に示す如く、磁器
層(la)(4a)の中に、厚膜導体(2a)と厚膜抵
抗体(3a)とt有する混成集積回路用σ)多層セラミ
ック回路基数を完成さぜた。なお、抵抗体(3a)の導
体(2a)にかからないS分の大きさは、3rnm X
3 mmであり、膜厚は18μmである。筐た。The material was thermocompressed at 100°C and 150 kg/cm'', and then heat treated at 500°C in a cholera oxidizing atmosphere to scatter and decompose the binder and solvent (organic vehicle), resulting in N, (98,
By firing at 1100° C. for 2 hours in a reducing atmosphere of 10 He (1.5 vol. N%), the thick film conductor ( 2a) and a thick film resistor (3a) and σ) multilayer ceramic circuit base for hybrid integrated circuits were completed. Note that the size of the S portion of the resistor (3a) that does not span the conductor (2a) is 3rnm
3 mm, and the film thickness is 18 μm. It was a cabinet.
抵抗体(3a)の組成は、焼成前の抵抗材料の一機質の
組成にほぼ一致している。The composition of the resistor (3a) substantially matches the composition of the resistor material before firing.
次に、この抵抗体(3a)の25℃におけるシート抵抗
tt、tΩ/口)會ティジタルマルチメータで測定した
。次いで、各試料(多層セラミック回路基板)’!:湛
度60り、相対湿度95%の環境下に1000時間放置
し、その債、ティジタルマルチメータで杓びシートl?
LEtl(Ω/口)を測定し、この耐湿試験によるJs
膜導体(2a)の抵抗を化率ΔRを(R8−a、/R,
J X 100%で求ぬた。表の特性の欄には上記のR
oとΔにとが示されている。なお、Roの値の欄のkは
X10’に:を味する。Next, the sheet resistance (tt, tΩ/mouth) of this resistor (3a) at 25° C. was measured using a digital multimeter. Next, each sample (multilayer ceramic circuit board)'! : Leave it for 1000 hours in an environment with a water content of 60% and a relative humidity of 95%.
Measure LEtl (Ω/mouth) and Js from this moisture resistance test.
The resistance of the membrane conductor (2a) is expressed as ΔR (R8-a, /R,
JX 100% wanted. In the characteristics column of the table, the above R
o and Δ are shown. Note that k in the Ro value column indicates: in X10'.
表の試料A1〜32から明らかな如く、抵抗材料の混合
物の組成ケ。As is clear from Samples A1 to 32 in the table, the composition of the mixture of resistance materials.
カラス 10〜60重量%。Crow 10-60% by weight.
硼化タングステン 20〜7clcJ1%。Tungsten boride 20-7clcJ1%.
弗化物 5〜50重−J1%。Fluoride 5-50 weight - J1%.
炭酸塩 10〜60重量る
とすることにより、IRx雰囲気中の焼成であるにも拘
らず、シート抵抗が790.6Ω/ロ〜354.8にΩ
/口、耐湿試験による抵抗変化率ΔRが−2,0%〜+
2.0%の範囲内のJ!#膜抵抗体を提供することがで
きる。By setting the carbonate weight to 10 to 60%, the sheet resistance was reduced to 790.6Ω/low to 354.8Ω even though the firing was performed in an IRx atmosphere.
/ mouth, resistance change rate ΔR by humidity test is -2.0% to +
J within 2.0%! #Membrane resistors can be provided.
r(h 、表に示ざiて(・ない本発明の範囲外の試料
により次のことが確認されて(゛る。r(h) The following was confirmed by samples not shown in the table (・) which are outside the scope of the present invention.
III 硼化タングステンの量t−20重景%l9も
少なくすると、抵抗値が高くなり過ぎる。III If the amount of tungsten boride t-20%l9 is also reduced, the resistance value becomes too high.
[21硼化タングステンの量會70重量先よりも多くす
ると、焼結が困難になる。[If the amount of 21 tungsten boride is more than 70% by weight, sintering becomes difficult.
(31ガラスの1kyio重景%よりも少なくすると、
焼結が困難になる。(If it is less than 1kyio heavy view% of 31 glass,
Sintering becomes difficult.
(41ガラスの亀孕60重量鳴よりも多くすると。(If it is more than 41 glass weight 60 weight mei.
抵抗値が高くなり過ぎる。The resistance value becomes too high.
(51弗化物の介r5重量%よりも少なくすると。(When the content of 51 fluoride is less than 5% by weight.
抵抗変化率Δft’に±2%の範囲に収ぬることが困難
になる。It becomes difficult to keep the resistance change rate Δft' within a range of ±2%.
(6)弗化物の素を50重量%よりも多くすると。(6) When the fluoride element is increased to more than 50% by weight.
抵抗変化率ΔRを±2%9円に収めるCとが困難になる
。It becomes difficult to keep the resistance change rate ΔR within ±2% of 9 yen.
(7) 炭酸塩の1に1011 i %よりも少なく
てると、抵抗変化率へ【を會±2%の範囲に収めろこと
が困難になる。(7) If the carbonate content is less than 1011 i%, it becomes difficult to keep the resistance change rate within ±2%.
(8) 炭酸塩のtk60重[′9oよりも多くする
と。(8) tk60 weight of carbonate [if it is greater than '9o.
抵抗変化率Δ[(i±2%の範囲に収ぬることが困難に
なる。It becomes difficult to keep the resistance change rate Δ[(i±2%).
〔実施例2〕
ガラスの組成が変化しても、実施例1とl1ii]44
な作用効果が得られることt−確かめる′fcぬに1次
のり]I〈ガラス粉本に?’E製した。二酸化珪素(S
jO*)75.01kts、三酸化ニホウ素(Bt(J
s) 13.0 重tS、炭酸カルシウA (CaC(
Js) I O−0重Jlt部、及び酸化アルばニウム
(Al、U、) 2.0東を部上混合し・実施例1と同
様の手法にて粉末状のガラス會得友。[Example 2] Even if the composition of the glass changes, Example 1 and l1ii]44
Make sure that the effect is obtained 'fc Nuni 1st glue] I <In the glass powder book? 'Made by E. Silicon dioxide (S
jO*) 75.01kts, diboron trioxide (Bt(J
s) 13.0 heavy tS, calcium carbonate A (CaC(
Js) IO-0 heavy Jlt part and aluminum oxide (Al, U, ) 2.0 East were mixed in the parts and a powdered glass mixture was prepared in the same manner as in Example 1.
次に、このガラスを使用してガラス207に量%。Next, use this glass to make glass 207 by weight%.
W、B、5重量%、 W、815″に量%、W820重
量る。W, B, 5% by weight, W, 815″ weight%, W820% by weight.
SrF、、 CaF、及びBaF= k夫々5重量%
、CaCUl 10東素%、 5rCt)110重J
l % 、 BaC015重量%から成る抵抗材料の
混合物を実施例1と同一の方法で得、これr便用して実
施例1と同一の方法で同一構造の多層セラミック回路基
8!II−形成し、実施例1と同様に電気的特性音測定
したところ、シート抵抗mは2.324 kΩ/口、抵
抗変化率ΔRは+0.2先であった。SrF, CaF, and BaF = k 5% by weight each
, CaCUl 10% Toso, 5rCt) 110 heavy J
A mixture of resistive materials consisting of 1% by weight and 15% by weight of BaCO was obtained in the same manner as in Example 1, and used to prepare a multilayer ceramic circuit board 8! of the same structure in the same manner as in Example 1. II- was formed, and the electrical characteristic sound was measured in the same manner as in Example 1, and the sheet resistance m was 2.324 kΩ/hole, and the resistance change rate ΔR was +0.2 ahead.
Cの実施例2から明らかなように、ガラスの組成葡変え
ても抵抗特性に大きな相違は見られない。As is clear from Example 2 of C, there is no significant difference in resistance characteristics even if the composition of the glass is changed.
つまり1本発明にお(・・て使用されるガラスは必ずし
も特定された1つの組成に限られるものではない。ナオ
、実施例1におけるS iU、 −ZnU −ZrO,
−(’、a(J Aftυ、糸ガラス、実施例2の3
iU1− BIC)s−CaO−AI、03糸ガラス汀
(・ずねも作朦点(IXIO’ホイズとなる温度)が9
00〜1200℃のガラスである。本発明に係わるガラ
スは、実施例1及び2の組成のガラスに限るCとなく、
900〜1200℃の作業点に’lhし、且つ還元雰囲
気で焼成する際に金纏化されや丁い金属酸化物tPbO
,8nOt、 5itO1等)k含まないものであれば
、どのようなものでもよい。In other words, the glass used in the present invention is not necessarily limited to one specified composition.
-(', a(J Aftυ, thread glass, Example 2-3
iU1-BIC) s-CaO-AI, 03 thread glass layer (・Zunemo production point (temperature at which IXIO' whiz) is 9
It is glass with a temperature of 00 to 1200°C. The glass according to the present invention is not limited to the glass having the composition of Examples 1 and 2, but
The metal oxide tPbO is heated to a working temperature of 900-1200°C and is converted to gold when fired in a reducing atmosphere.
, 8nOt, 5itO1, etc.) Any material may be used as long as it does not contain k.
本発明は上述の実施例に限定されるものでなく。 The invention is not limited to the embodiments described above.
例えば次の変形例が可能なものである。For example, the following modifications are possible.
lal 硼化タングステンとガラスと弗化物と炭酸塩
とを含む抵抗体ペースト’を塗布したグリーンシートの
焼成温度に1000℃〜1200℃の範囲で変化させて
も、抵抗値R8及び抵抗変化率ΔI(が殆んど変化しな
(・ことが確認されている。例えば。lal Even if the firing temperature of a green sheet coated with a resistor paste containing tungsten boride, glass, fluoride, and carbonate is varied in the range of 1000°C to 1200°C, the resistance value R8 and the resistance change rate ΔI ( It has been confirmed that there is almost no change (for example.
実施例1の試料A 12と同一組成で焼成温度のみ71
000℃、1050℃% 1150℃%1200℃に変
化さぞ九時の抵抗値R0は4.589 kΩ/口。Sample A of Example 1 Same composition as 12, only firing temperature 71
Change from 000℃ to 1050℃% to 1150℃% to 1200℃.The resistance value R0 at 9 o'clock is 4.589 kΩ/mouth.
4.574にΩ/0.4.563にΩ/口、4.578
にΩ/口であり、また抵抗変化率ΔRは一帆5%、−0
.4%、−0.3%、−帆4%であり友。他の組成にお
いてもほぼ同様な結果が得られた。4.574 to Ω/0.4.563 to Ω/mouth, 4.578
is Ω/mouth, and the resistance change rate ΔR is 5%, -0
.. 4%, -0.3%, -Sail 4% and friend. Almost similar results were obtained with other compositions.
(bl グリーンシー)k焼成する時の雰囲気を中性
雰囲気(不活性雰囲気)としてもよい。ILグリーンシ
ートを焼成する前の有機物を分解及び飛散させるための
酸化性雰囲気の熱処理温度を例えば400℃N600℃
で変化させてもよい。(bl Green Sea) k The atmosphere during firing may be a neutral atmosphere (inert atmosphere). The heat treatment temperature in an oxidizing atmosphere for decomposing and scattering organic substances before firing the IL green sheet is, for example, 400°C N 600°C.
You may change it by
(cl ガラスと硼化タングステンと弗化物との混合
物のアルゴン雰囲気中での焼成温度勿、例えば900〜
1200℃の範囲で変化させてもよい。またこの焼成會
アルゴンガス心外の不活性雰囲気。(cl) The firing temperature of a mixture of glass, tungsten boride, and fluoride in an argon atmosphere, e.g.
It may be changed within a range of 1200°C. This firing session also uses an inert atmosphere outside the argon gas core.
又は真壁中、又は中性雰囲気、又は還元性雰囲気で行っ
てもよい。Alternatively, it may be carried out in Makabe, a neutral atmosphere, or a reducing atmosphere.
+a+ @K 体ヘーストヶ作るたぬの有機バインダ
溶液(ビヒクル)は、ニトロセルロース等の樹脂r、テ
レピン油、ブチルカルピトールアセテート等の高沸点溶
剤に溶かし友ものでもよい@ま友。+a+ @K The organic binder solution (vehicle) of the tanu produced by body hest can be dissolved in a resin such as nitrocellulose, turpentine oil, or a high boiling point solvent such as butyl carpitol acetate.
この有機バインダ溶液の量は15〜35ttffll程
度が望ましい。The amount of this organic binder solution is preferably about 15 to 35 ttffll.
上述η為ら明らかな如く1本発明のペースト状抵抗材料
とニッケル等の卑金楓の導体ペーストとt非酸化雰囲気
で同時焼成することができ、且つ本発明の抵抗材料には
貴金属が含まれていない。従って、多層セラミック回路
基板、又はこれに類似の電気回路部品の小型化及び低コ
スト化に寄与することができる。ま次1本発明の抵抗材
料は前述の特許出願の抵抗材料に比較し、耐湿性の良い
抵抗体を提供することができる。As is clear from the above η, the paste-like resistive material of the present invention and the conductive paste of base metal such as nickel can be co-fired in a non-oxidizing atmosphere, and the resistive material of the present invention does not contain a noble metal. Not yet. Therefore, it is possible to contribute to miniaturization and cost reduction of multilayer ceramic circuit boards or similar electric circuit components. Second, the resistive material of the present invention can provide a resistor with better moisture resistance than the resistive material of the above-mentioned patent application.
第1図は本発明の実施例に係わる多層セラミック回路基
板を作製する際のグリーンシートと導体膜及び抵抗体膜
のパターン會示す平面図、第2図は第1図の11−1線
に相当する部分の焼成債の多層セラミック回路基板を示
す断面図である。
;11・・・グリーンシート片、(21・・・導体膜、
(31・・・抵抗体M、+41・・・グリーンシート片
。FIG. 1 is a plan view showing the pattern combination of a green sheet, a conductor film, and a resistor film when manufacturing a multilayer ceramic circuit board according to an embodiment of the present invention, and FIG. 2 corresponds to line 11-1 in FIG. 1. FIG. 3 is a cross-sectional view showing the multilayer ceramic circuit board of the fired bond. ; 11... green sheet piece, (21... conductor film,
(31...Resistor M, +41...Green sheet piece.
Claims (3)
〜60重量%、 弗化カルシウム、弗化ストロンチウム、及び弗化バリウ
ムの内の少なくとも1種の弗化物5〜50重量%、 炭酸カルシウム、炭酸ストロンチウム、及び炭酸バリウ
ムの内の少なくとも1種の炭酸塩10〜60重量% から成る混合物の粉末と、 有機結合剤と、 溶剤と から成るペースト状抵抗材料。(1) Tungsten boride 20-70% by weight, glass 10%
~60% by weight, 5 to 50% by weight of at least one fluoride of calcium fluoride, strontium fluoride, and barium fluoride; at least one carbonate of calcium carbonate, strontium carbonate, and barium carbonate A paste-like resistance material consisting of a powder mixture consisting of 10 to 60% by weight, an organic binder, and a solvent.
(W_2B)、一硼化一タングステン(WB)、及び五
硼化二タングステン(W_2B_5)の内の少なくとも
1種である特許請求の範囲第1項記載の抵抗材料。(2) The tungsten boride is at least one of ditungsten monoboride (W_2B), monotungsten monoboride (WB), and ditungsten pentaboride (W_2B_5). Resistance materials listed in section.
囲のものである特許請求の範囲第1項又は第2項記載の
抵抗材料。(3) The resistance material according to claim 1 or 2, wherein the glass has a working point in the range of 900 to 1200°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60243722A JPS62104001A (en) | 1985-10-30 | 1985-10-30 | Resistance material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60243722A JPS62104001A (en) | 1985-10-30 | 1985-10-30 | Resistance material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62104001A true JPS62104001A (en) | 1987-05-14 |
JPH051963B2 JPH051963B2 (en) | 1993-01-11 |
Family
ID=17108016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60243722A Granted JPS62104001A (en) | 1985-10-30 | 1985-10-30 | Resistance material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62104001A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105692641A (en) * | 2015-12-25 | 2016-06-22 | 洛阳金鹭硬质合金工具有限公司 | Preparation method and application of tungsten boride |
CN106116593A (en) * | 2016-06-28 | 2016-11-16 | 东北大学 | A kind of preparation method of four tungsten boride ceramic powders |
-
1985
- 1985-10-30 JP JP60243722A patent/JPS62104001A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105692641A (en) * | 2015-12-25 | 2016-06-22 | 洛阳金鹭硬质合金工具有限公司 | Preparation method and application of tungsten boride |
CN106116593A (en) * | 2016-06-28 | 2016-11-16 | 东北大学 | A kind of preparation method of four tungsten boride ceramic powders |
Also Published As
Publication number | Publication date |
---|---|
JPH051963B2 (en) | 1993-01-11 |
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