JPS6292408A - Resistance material - Google Patents
Resistance materialInfo
- Publication number
- JPS6292408A JPS6292408A JP60232367A JP23236785A JPS6292408A JP S6292408 A JPS6292408 A JP S6292408A JP 60232367 A JP60232367 A JP 60232367A JP 23236785 A JP23236785 A JP 23236785A JP S6292408 A JPS6292408 A JP S6292408A
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、非酸化雰囲気中での焼成によって厚膜抵抗体
又はこれに類似の抵抗体を形成することができ、且つ耐
湿性の高い抵抗体を提供することができるペースト状抵
抗材料に関する。Detailed Description of the Invention [Industrial Application Field] The present invention provides a resistor that can form a thick film resistor or a similar resistor by firing in a non-oxidizing atmosphere, and has high moisture resistance. The present invention relates to a pasty resistance material capable of providing a resistance.
未焼成上2ミックシート110ちグリーンシートにニッ
ケル等の卑金属の導体ペーストラ塗布し、1つ珪化タン
グステンと弗化物とガラス′と乞含有する抵抗体ペース
トラ塗布したものを非酸化雰囲気中で焼成し、厚膜導体
と厚膜蝋抗体との両方を有する多層セラミック回路基板
を作成する方法は。Two unfired mixed sheets (110 green sheets) were coated with a conductor paste of base metal such as nickel, and one was coated with a resistor paste containing tungsten silicide, fluoride, and glass, and fired in a non-oxidizing atmosphere. A method of making a multilayer ceramic circuit board having both thick film conductors and thick film wax bodies.
本件出願人に係わる特願昭59−197658号明細書
に開示されている。この方法においては、厚膜導体及び
厚II抵抗の形成に賞金1g4が使用されないので、多
層セラミック回路基板のコストの低減ができる。This is disclosed in Japanese Patent Application No. 59-197658 filed by the applicant. In this method, the cost of the multilayer ceramic circuit board can be reduced because 1g4 of prize money is not used for forming the thick film conductor and the thick II resistor.
しかし、上記出願に係わる抵抗材料で形成され “
た薄膜抵抗は十分な耐湿特性を有さない。例えば。However, if it is made of the resistive material related to the above application, “
Thin film resistors do not have sufficient moisture resistance. for example.
温度6.θ℃、相対湿度95%の環境下に1000
’時間放置した場合の抵抗変化率は+5%〜+1
0%程度になる。Temperature 6. 1000 in an environment of θ℃ and 95% relative humidity.
'Resistance change rate when left for a period of time is +5% to +1
It will be around 0%.
そこで1本発明の目的は、非酸化雰囲気中での焼成で抵
抗体を形成することができ、且つ耐湿試験における抵抗
変化率が二2%以内の抵抗体を得ることができる抵抗材
料を提供することにある。Therefore, one object of the present invention is to provide a resistor material that can be formed into a resistor by firing in a non-oxidizing atmosphere and that can yield a resistor with a resistance change rate of 22% or less in a moisture resistance test. There is a particular thing.
上記目的を達成するたぬの本発明に係わる抵抗材料は、
タングステン25〜85重章%と、ガラス5〜65]f
i1%と、炭酸カルシウム(Ca COm )、炭酸ス
トロンチウム(5rCOs) 、炭酸バ11ウム(Ba
CO,)の内の少なくとも1種の炭酸塩10〜70重責
%とから成る混合物の粉末と、有機結合剤と、溶剤とか
ら成る。The resistance material according to the present invention that achieves the above object is:
25-85% tungsten and 5-65% glass
i1%, calcium carbonate (Ca COm ), strontium carbonate (5rCOs), barium carbonate (Ba
It consists of a powder of a mixture consisting of 10 to 70 weight percent of at least one carbonate of CO, ), an organic binder, and a solvent.
上記組成のペースト状抵抗材料をグツ1−ンシート上に
印刷し、非酸化雰囲気で焼成すれば、耐湿試験における
抵抗変化率が223以内の厚膜抵抗体が得られる。従っ
て、ニッケル等の卑金属の導体ペーストによる厚膜導体
の形成と同時に卑金楕淳膜抵抗を形成するCとが出来る
。If a pasty resistance material having the above composition is printed on a rubber sheet and fired in a non-oxidizing atmosphere, a thick film resistor having a resistance change rate of 223 or less in a moisture resistance test can be obtained. Therefore, it is possible to form a base metal elliptical film resistor simultaneously with the formation of a thick film conductor using a conductor paste of a base metal such as nickel.
〔実施例1〕
次に1本発明の実施例に係わる抵抗材料及びこれを使用
した多層セラミック回路基数の形成方法について述べる
。[Example 1] Next, a resistor material according to an example of the present invention and a method of forming a multilayer ceramic circuit board using the same will be described.
まず、二酸化珪素(SjO,) 78.0重量部、酸化
亜鉛(ZnO) 5.5重量部、酸化ジルコニウム(Z
rO,)12.0重責部、炭酸カルシウム(CaCOl
)3.0重量部、及び酸化アルミニウム(AlyOm)
1.5重量部を混合し、アルミナルツボ中、1400
℃で30分間溶融し、この溶融液を水中に投入し、急冷
させた。この急冷物を増シ出してアルミナ乳鉢に入れ、
約50μm程度になる寸で粉砕し、更にCれをエタノー
ルと共にポリエチレン製ボットミルの中に入れ、アルミ
ナボールで150時間粉砕し1粒径が10μm以下の粉
末状のガラスを得た。First, 78.0 parts by weight of silicon dioxide (SjO,), 5.5 parts by weight of zinc oxide (ZnO), and zirconium oxide (ZnO) were added.
rO, ) 12.0 heavy duty, calcium carbonate (CaCOl
) 3.0 parts by weight, and aluminum oxide (AlyOm)
Mix 1.5 parts by weight and place in an aluminum crucible at 1400
The mixture was melted at ℃ for 30 minutes, and the melt was poured into water and rapidly cooled. Take out this rapidly cooled material and put it in an alumina mortar.
The mixture was crushed to a size of approximately 50 μm, and the carbon particles were placed in a polyethylene bot mill together with ethanol, and crushed with alumina balls for 150 hours to obtain powdered glass with a particle diameter of 10 μm or less.
次に、上記ガラスと、タングステン(W)とを表に示す
割合に秤量し、ボールミルに入れて攪拌した。次いで、
これをアルゴンガス雰囲気中1200℃で1時間熱処理
し、しかる後、エタノールと共にポリエチレン製のボッ
トミル中に入れ、アルミナボールで24時間粉砕し、1
0μmJ4下のタングステンとガラスとの混合物の粉末
を得た。INOも。Next, the above glass and tungsten (W) were weighed in the proportions shown in the table, placed in a ball mill, and stirred. Then,
This was heat-treated at 1200°C for 1 hour in an argon gas atmosphere, then placed in a polyethylene bot mill with ethanol, pulverized with alumina balls for 24 hours, and
A powder of a mixture of tungsten and glass below 0 μm J4 was obtained. INO too.
表の試料A1〜70に示されている種々の割合のガラス
とタングステンとの混合粉末を得た。Mixed powders of glass and tungsten in various proportions shown in samples A1 to 70 in the table were obtained.
次に、ガラスとタングステンと炭酸塩(CaCO,。Next, glass, tungsten, and carbonate (CaCO).
5rCO1、BaC0,の1種以上〕との割合が表の試
料A1〜70の組成の欄に示すようになるように。5rCO1, BaC0, etc.] such that the ratio is as shown in the composition column of samples A1 to 70 in the table.
上述のガラスとタングステンの混合粉末に対して炭酸塩
を添加し、混合するCとによ′つて本発明に係わる抵抗
材料の混合物の粉末を得た。即ち、試料A1においては
、抵抗材料の混合物の組成をガラス5重量%、W85i
(it%、 CaC0g 10重量%とじ、残りの試料
A2〜70においても組成の欄に示す重量割付の組成と
した。Carbonate was added to the above-mentioned mixed powder of glass and tungsten, and C was mixed to obtain a powder of a resistance material mixture according to the present invention. That is, in sample A1, the composition of the resistance material mixture was 5% by weight of glass and W85i.
(it%, CaC0g 10% by weight), and the remaining samples A2 to A70 also had compositions according to the weight allocation shown in the composition column.
次に、各試料の抵抗材料の混@物の粉末100N量部に
、有機結合剤としてのエチルセルロース10菖量部を溶
剤としてのブチルカルピトール90重量部に溶かし′f
cものから成る有機バインダ溶液即ちビヒクル25重量
部を加えて3本ロールミルで混練して約800ボイズの
抵抗体ペーストを得た。Next, 10 parts by weight of ethyl cellulose as an organic binder was dissolved in 90 parts by weight of butyl calpitol as a solvent in 100 N parts of powder of the resistance material mixture of each sample.
25 parts by weight of an organic binder solution, i.e. vehicle, consisting of C was added and kneaded in a three-roll mill to obtain a resistor paste with about 800 voids.
一方、上記抵抗体ペーストを印刷する之めのグリーンシ
ートを次の方法で作製した。AI、0.粉末50重量部
、 sho、粉末20重量部、SrO粉末25重量部、
Li1O粉末1重量部、及びMgO粉末4重量部から
なる上2ミック原料粉末と、アクリル酸エステルポリマ
ーの水溶液からなるバインダーと。On the other hand, a green sheet on which the resistor paste was printed was prepared in the following manner. AI, 0. 50 parts by weight of powder, 20 parts by weight of sho powder, 25 parts by weight of SrO powder,
Upper two mix raw material powders consisting of 1 part by weight of Li1O powder and 4 parts by weight of MgO powder, and a binder consisting of an aqueous solution of acrylic acid ester polymer.
グリセリンと、カルボン酸塩及び水と、をそれぞれボー
ルミルに入れて混合して、スリップを作製し、脱泡処理
した後にドクターブレード法によシ厚さ200μmの長
尺のグリーンシートを作製した。そして、このグリーン
シートから、9mmx9mmと6 mm X 9 mm
の2種類のグリーンシート片を切シ抜いた。Glycerin, a carboxylic acid salt, and water were each placed in a ball mill and mixed to prepare a slip, which was defoamed, and then a long green sheet with a thickness of 200 μm was prepared using a doctor blade method. Then, from this green sheet, 9mm x 9mm and 6mm x 9mm
Two types of green sheet pieces were cut out.
次に、第1図に示す如く、前者のグリーンシート片+1
7上に、ニッケル(Ni )粉末と有機バインダ111
H[(エチルセルロース10重量部をテレピン油90重
量部に溶かしたもの)とを3:1の比で混練シた導体ペ
ーストを200メツシユのスクリーンを用いて印刷し、
125℃、10分間乾燥するCとによって第1゛図に示
す如<Ni導体膜(2)を形成した。Next, as shown in Fig. 1, the former green sheet piece +1
7, nickel (Ni) powder and organic binder 111
A conductive paste prepared by kneading H[(10 parts by weight of ethyl cellulose dissolved in 90 parts by weight of turpentine oil) in a ratio of 3:1 was printed using a 200 mesh screen,
A Ni conductor film (2) was formed as shown in FIG. 1 by drying at 125° C. for 10 minutes.
次に1本発明に係わる抵抗体ペーストを導体ペーストと
同様にスクリーン印刷し、乾燥することによって、第1
図に示す如く抵抗体膜(31を形成した。Next, a resistor paste according to the present invention is screen printed in the same manner as the conductor paste and dried.
A resistor film (31) was formed as shown in the figure.
次に、グリーンシート片(11の土に鎖線で示す大きさ
のもう一万のグリーンシート片(4)を積層し。Next, 10,000 green sheet pieces (4) of the size indicated by the chain lines were laminated on top of the green sheet pieces (11).
100℃、150 kg/cm’で熱圧着し、これを酸
化雰囲気中500℃で熱処理して有機結合剤及び溶剤(
有機ビヒクル)を飛散及び分解し、N、(98,5容積
%)+Ht(1,5容積%)の還元雰囲気中で1100
℃、2時間焼成し、第2図に示す如く、磁器層Ha)E
ta)の中は、厚膜導体(2a)と厚膜抵抗体(3a)
とを有する混成集積回路用の多層セラミック回路基鈑を
完成させた。なお、抵抗体(3a)の導体(2a)にか
からない部分の大きさは、3mmX3mmであり、膜厚
は18μmである。また。Thermocompression bonding was carried out at 100°C and 150 kg/cm', and this was heat-treated at 500°C in an oxidizing atmosphere to remove the organic binder and solvent (
1100 in a reducing atmosphere of N, (98.5% by volume) + Ht (1.5% by volume).
℃ for 2 hours to form a porcelain layer Ha)E as shown in FIG.
Inside ta) are a thick film conductor (2a) and a thick film resistor (3a).
We have completed a multilayer ceramic circuit board for hybrid integrated circuits. Note that the size of the portion of the resistor (3a) that does not cover the conductor (2a) is 3 mm x 3 mm, and the film thickness is 18 μm. Also.
抵抗体(3a)の組成は、焼成前の抵抗材料の無機質の
組成にほぼ一致している。The composition of the resistor (3a) almost matches the inorganic composition of the resistor material before firing.
次に、この抵抗体(3a)の25℃におけるシート抵抗
R6(Ω/口)をディジタルマルチメータで測足した。Next, the sheet resistance R6 (Ω/hole) of this resistor (3a) at 25° C. was measured using a digital multimeter.
次いで、各試料(多層セラミック回路基板)を温度60
℃、相対湿度95%の環境下に1000時間放置し、そ
の後、ディジタルマルチメータで杓びシート抵抗R,(
Ω/口)を測足し、この耐湿試験による厚膜導体(2a
)の抵抗変化率ΔRを(R0fta/ Ro ) X
100%で求めた。表の特性の欄には上記の亀とΔRと
が示されている。なお%へり値の欄のkは×10を意味
する。Next, each sample (multilayer ceramic circuit board) was heated to a temperature of 60°C.
℃ and relative humidity of 95% for 1000 hours, and then measured with a digital multimeter to determine the sheet resistance R, (
The thickness of the thick film conductor (2a
) resistance change rate ΔR (R0fta/Ro)
It was determined at 100%. In the characteristic column of the table, the above-mentioned turtle and ΔR are shown. Note that k in the % edge value column means x10.
表の試料A1〜70から明らかな如く、抵抗材料の混合
物の組成を、
ガラス 5〜65重量先。As is clear from samples A1 to 70 in the table, the composition of the mixture of resistive materials is as follows: Glass 5 to 65% by weight.
タングステン 25〜85重量%、
炭酸塩 10〜70重量%
とすることによシ、還元雰囲気中の焼成であるにも拘ら
ず、シート抵抗R0が27.63Ω/口〜387.3に
Ω/口、耐湿試験による抵抗変化率ΔRが−2,0%〜
+2.0%の範囲内の厚膜抵抗体を提供することができ
る。By using 25 to 85% by weight of tungsten and 10 to 70% by weight of carbonate, the sheet resistance R0 can be reduced from 27.63Ω/unit to 387.3Ω/unit despite firing in a reducing atmosphere. , resistance change rate ΔR by humidity test is -2.0% ~
Thick film resistors within the range of +2.0% can be provided.
なお1表に示されていない本発明の範囲外の試料によシ
次のことが確認されている。It should be noted that the following has been confirmed with samples not shown in Table 1 that are outside the scope of the present invention.
112 タングステンの量を25重量%よ)も少なく
すると、抵抗値が高くなり過ぎる。112 If the amount of tungsten is reduced by as much as 25% by weight, the resistance value becomes too high.
(21タングステンの量を85重量部よシも多くすると
、焼結が困難になる。(If the amount of 21 tungsten is increased by more than 85 parts by weight, sintering becomes difficult.
(3) ガラスの量を5重量%よシも少なくすると。(3) If the amount of glass is reduced by 5% by weight.
焼結が困難になる。Sintering becomes difficult.
(4) ガラスの量を65重量%よりも多くすると。(4) When the amount of glass is greater than 65% by weight.
抵抗値が高くなシ過ぎる。The resistance value is too high.
(5)炭酸塩のtを10重量%よシも少なくすると、抵
抗変化率ΔRt−+2%の範囲に収めることが困難にな
る。(5) If the t of the carbonate is reduced by 10% by weight, it becomes difficult to keep the resistance change rate within the range of ΔRt−+2%.
(6)炭酸塩の量を70重量%よシも多くすると。(6) If the amount of carbonate is increased by 70% by weight.
抵抗変化率Δat二2%の範囲に収ぬ゛ることが困難に
なる。It becomes difficult to keep the resistance change rate Δat within the range of 22%.
〔実施例2〕
ガラスの組成が変化しても、実施例1と同様な作用効果
が得られることを確かめるたぬに1次の如くガラス粉末
を炸裂した。二酸化珪素(830,)75.0重量部、
三酸化ニホウ素(B*Om) 13.0重量部、炭酸カ
ルシウム(Ca Co1) 10−0重量部、及び酸化
アルミニウム(^’yOa) 2−0重量部を混合し。[Example 2] To confirm that the same effects as in Example 1 could be obtained even if the composition of the glass was changed, glass powder was exploded as described above. 75.0 parts by weight of silicon dioxide (830,),
13.0 parts by weight of diboron trioxide (B*Om), 10-0 parts by weight of calcium carbonate (CaCo1), and 2-0 parts by weight of aluminum oxide (^'yOa) were mixed.
実施例1と同様の手法にて粉末状のガラスを得た。Powdered glass was obtained in the same manner as in Example 1.
次に、このガラスを使用して実施例1の試料扁66と同
一組成の抵抗材料を実施例1と同一の方法で得、これを
使用して実施例1と同一の方法で同一構造の多層セラミ
ック回路基板を形成し、実施例1と同様に電気的特性を
測定したところ、シート抵抗値亀は4.872 kΩ/
口、抵抗変化率ΔRaη
は十0.2%であった。Next, using this glass, a resistive material having the same composition as the sample plate 66 of Example 1 was obtained in the same manner as in Example 1, and a multilayer material having the same structure was obtained by using the same method as in Example 1. When a ceramic circuit board was formed and its electrical characteristics were measured in the same manner as in Example 1, the sheet resistance value was 4.872 kΩ/
The resistance change rate ΔRaη was 100.2%.
この実施例2から明らかなように、ガラスの組成を変え
ても抵抗特性に大きな相違は見られない。As is clear from Example 2, there is no significant difference in resistance characteristics even if the composition of the glass is changed.
つまヤ1本発明において使用されるガラスは必ずしも特
足された1つの組成に限られるものではない。なお、実
施例1におけるS iO,−ZnO−ZrO,−CaO
Al鵞03系ガラス、実施例2の5i01 Btus
−CaO−AI、01系ガラスはいずれも作業点(IX
IO’ホイズとなる温度)が900〜1200”Cのガ
ラスである。本発明に係わるガラスは、実施例1及び2
の組成のガラスに限ることなく、900〜1200℃の
作業点を有し、且つ還元雰囲気で焼成する際に金楕化さ
れやすい金Jiji酸化971 (PbO,SnO,、
Bi。Tsumaya 1 The glass used in the present invention is not necessarily limited to one particular composition. Note that SiO, -ZnO-ZrO, -CaO in Example 1
Al 03 series glass, 5i01 Btus of Example 2
-CaO-AI and 01 series glasses both have working points (IX
The glass according to the present invention has a temperature of 900 to 1200"C (temperature at which the
It is not limited to glass with a composition of 971 (PbO, SnO,
Bi.
01等)會含菫ないものであれば、どのようなものでも
よい。01, etc.) Any type may be used as long as it does not involve a meeting.
本発明は上述の実施例に限足されるものでなく。 The present invention is not limited to the embodiments described above.
例えば次の変形例が可能なものである。For example, the following modifications are possible.
(al タングステンとガラスと炭酸塩とを含む抵抗
体ペーストを塗布したグリーンシートの焼成温a&
度’tiooo℃〜1200℃の範囲で変化させても。(The firing temperature of a green sheet coated with a resistor paste containing tungsten, glass, and carbonate may be varied within the range of 1200°C to 1200°C.
抵抗値−及び抵抗変化率ΔRが殆んど変化しないことが
確認されている。例えば、実施例1の試料A66と同一
組成で焼成温度のみ′?t1000 ℃。It has been confirmed that the resistance value and the resistance change rate ΔR hardly change. For example, it has the same composition as Sample A66 of Example 1, but only at the firing temperature'? t1000℃.
1050℃、1150℃、1200℃に変化させた時の
抵抗値へは4.973にΩ/0.4.988にΩ/口。The resistance value when changing to 1050℃, 1150℃, and 1200℃ is 4.973Ω/0.4.988Ω/mouth.
4.976 kΩ/口、4.987にΩ/口であシ、ま
た抵抗変化率ΔRは、−0,7%、 −0,4%、 −
0,5%。4.976 kΩ/mouth, 4.987 Ω/mouth, and the resistance change rate ΔR is -0.7%, -0.4%, -
0.5%.
−0,6%であった。他の組成においてもほぼ同様な結
果が得られた。-0.6%. Almost similar results were obtained with other compositions.
【i グリーンシートを焼成する時の雰囲気を中性雰囲
気(不活性雰囲気]としてもよい。また。[i] The atmosphere when firing the green sheet may be a neutral atmosphere (inert atmosphere).Also.
グリーンシートを焼成する前の有機物を分解及び飛散さ
ぜるたぬの酸化性雰囲気の熱処理温度を例えば400℃
〜600℃で変化させてもよい。Before firing the green sheet, the heat treatment temperature in the oxidizing atmosphere of the oxidizing atmosphere for decomposing and scattering organic matter is set to, for example, 400°C.
It may be changed at ~600°C.
(cl ガラスとタングステンとの混合物のアルゴン
雰囲気中での焼成m度を1例えば900〜1200℃の
範囲で変化させてもよい。またこの焼成をアルゴンガス
以外の不活性雰囲気、又は真空中、又は中性雰囲気、又
は還元性雰囲気で行ってもよい。(cl) The degree of firing of a mixture of glass and tungsten in an argon atmosphere may be varied, for example, in the range of 900 to 1200°C.Also, this firing may be performed in an inert atmosphere other than argon gas, in a vacuum, or It may be carried out in a neutral atmosphere or a reducing atmosphere.
+d) 抵抗体ペーストラ作るための有機バインダ溶
液(ビヒクル〕は、ニトロセルロース等の樹脂を、テレ
ピン油、ブチルカルピトールアセテート等の高沸点溶剤
に溶かしたものでもよい。筐た。+d) The organic binder solution (vehicle) for making the resistor pastera may be one in which a resin such as nitrocellulose is dissolved in a high boiling point solvent such as turpentine oil or butyl carpitol acetate.
Cの有機バインダ溶液の量は15〜35重量部程度置部
ましい。The amount of the organic binder solution C is preferably about 15 to 35 parts by weight.
上述から明らかな如く1本発明のペースト状抵抗材料と
ニッケル等の卑金梱の導体ペーストとを非酸化雰囲気で
同時焼成することができ、且つ本発明の抵抗材料には貴
金属が含まれていない。従って、多層セラミック回路基
数、又はこれに類似の電気回路部品の小型化及び低コス
ト化に寄与することができる。また1本発明の抵抗材料
は前述の特許出願の抵抗材料に比較し、耐湿性の良い抵
抗体を提供するCとができる。As is clear from the above, the paste-like resistive material of the present invention and the conductor paste made of base metal such as nickel can be co-fired in a non-oxidizing atmosphere, and the resistive material of the present invention does not contain any noble metal. . Therefore, it is possible to contribute to miniaturization and cost reduction of multilayer ceramic circuit boards or similar electrical circuit components. Furthermore, the resistive material of the present invention can provide a resistor with better moisture resistance than the resistive material of the patent application mentioned above.
第1図は本発明の実施例に係わる多層セラミック回路層
&i−作製する際のグリーンシートと導体膜及び抵抗体
膜のパターン上述す平面図、第2図は第1図のローn線
に相当する部分の焼成後の多層セラミック回路基板を示
す断面図である。
+11・・・グリ−ンシート片、(21・・・導体膜、
(3)・・・抵抗体膜、+41−・・グリーンシート片
。
代 理 人 高 野 則 次第1図
第2図Figure 1 is a plan view of the above-mentioned pattern of the green sheet, conductor film, and resistor film when fabricating the multilayer ceramic circuit layer and i- according to the embodiment of the present invention, and Figure 2 corresponds to the low n-wire shown in Figure 1. FIG. 3 is a cross-sectional view showing the multilayer ceramic circuit board after firing the portion to be heated. +11... Green sheet piece, (21... Conductor film,
(3)...Resistor film, +41-...Green sheet piece. Agent Nori Takano Figure 1 Figure 2
Claims (2)
ムの内の少なくとも1種の炭酸塩 10〜70重量%、 から成る混合物の粉末と、 有機結合剤と、 溶剤と から成るペースト状抵抗材料。(1) A powder of a mixture consisting of 25 to 85% by weight of tungsten, 5 to 65% by weight of glass, and 10 to 70% by weight of at least one carbonate of calcium carbonate, strontium carbonate, and barium carbonate, and an organic bond. A paste-like resistance material consisting of an agent and a solvent.
囲のものである特許請求の範囲第1項記載の抵抗材料。(2) The resistance material according to claim 1, wherein the glass has a working point in the range of 900 to 1200°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60232367A JPS6292408A (en) | 1985-10-18 | 1985-10-18 | Resistance material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60232367A JPS6292408A (en) | 1985-10-18 | 1985-10-18 | Resistance material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6292408A true JPS6292408A (en) | 1987-04-27 |
Family
ID=16938104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60232367A Pending JPS6292408A (en) | 1985-10-18 | 1985-10-18 | Resistance material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6292408A (en) |
-
1985
- 1985-10-18 JP JP60232367A patent/JPS6292408A/en active Pending
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