JPH027161B2 - - Google Patents

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Publication number
JPH027161B2
JPH027161B2 JP59197655A JP19765584A JPH027161B2 JP H027161 B2 JPH027161 B2 JP H027161B2 JP 59197655 A JP59197655 A JP 59197655A JP 19765584 A JP19765584 A JP 19765584A JP H027161 B2 JPH027161 B2 JP H027161B2
Authority
JP
Japan
Prior art keywords
weight
parts
resistor
glass
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59197655A
Other languages
Japanese (ja)
Other versions
JPS6175501A (en
Inventor
Toshimitsu Honda
Shoichi Tosaka
Kazuharu Onigata
Nobutate Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP59197655A priority Critical patent/JPS6175501A/en
Publication of JPS6175501A publication Critical patent/JPS6175501A/en
Publication of JPH027161B2 publication Critical patent/JPH027161B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は、非酸化性雰囲気中での焼成で厚膜抵
抗体等を形成するための抵抗材料に関する。この
抵抗材料を使用すれば、共通のセラミツク基板に
厚膜抵抗体と卑金属配線導体とを同時に形成する
ことが出来る。 従来の技術 最近、電子回路装置を超小型化するために、多
層セラミツク基板が使用されるようになつた。こ
の種の多層セラミツク基板を低コスト化するため
に、配線導体をニツケル等の卑金属で形成するこ
とが試みられている。 発明が解決しようとする問題点 上述の如く、卑金属で配線導体を形成する場合
には、未焼成セラミツクシート(生シート)に導
体ペーストを塗布したものを非酸化性雰囲気中で
焼成しなければならない。ところが、導体ペース
トと同時に非酸化性雰囲気中で焼成し、実用可能
な特性を得ることが出来る抵抗材料はまだ開発さ
れていない。従つて、卑金属で配線導体を形成す
る従来の多層セラミツク基板においては、各セラ
ミツク層間に配線導体を設け、基板表面上に、抵
抗等の受動素子、トランジスタ等の能動素子、及
びこれ等の配線導体を設けなければならなかつ
た。この結果、セラミツク層中の配線パターンが
粗であるにも拘らず、セラミツク基板表面におけ
る配線パターン及び回路素子の配置が密になり、
電子回路装置の小型化に限界があつた。上述の如
き問題及びこれに類似した問題は、非酸化性雰囲
気中で焼成可能な抵抗材料が得られれば解決され
る。従つて、本発明の目的は、非酸化性雰囲気中
で焼成可能な抵抗材料を提供することにある。 問題点を解決するための手段 上記目的を達成するための本発明の抵抗材料
は、硼化モリブデン29.0〜75.0重量部、弗化カル
シウム、弗化ストロンチウム、及び弗化バリウム
の内の少なくとも1種の弗化金属1.0〜61.0重量
部、ガラス10.0〜70.0重量部から成る。 作 用 上記組成の抵抗材料を使用して抵抗体ペースト
を作り、これをセラミツク生シート上に印刷し、
非酸化性雰囲気中で焼成すれば、実用可能な特性
を有する厚膜抵抗を得ることが出来る。従つて、
ニツケル等の卑金属導体ペーストによる厚膜導体
の形成と同時に卑金属厚膜抵抗を形成することが
出来る。 実施例 1 次に、本発明の実施例に係わる抵抗材料及びこ
れを利用した多層セラミツク回路基板の形成方法
について述べる。 まず、二酸化珪素(SiO2)78.0重量部、酸化悪
鉛(ZnO)5.5重量部、酸化ジルコニウム(ZrO2
12.0重量部、炭酸カルシウム(CaCO3)3.0重量
部、及び酸化アルミニウム(Al2O3)1.5重量部を
混合し、アルミナルツボ中、1400℃で30分間溶融
し、この溶融液を水中に投入し、急冷させた。こ
のガラスをアルミナ乳鉢で約50μm程度に粉砕
し、更にこれをエタノールと共にポリエチレン製
ポツトミルの中に入れ、アルミナボールで150時
間粉砕し、粒径が10μm以下の粉末状のガラスを
得た。 次に、上記ガラスと、Mo2Bと、CaF2とを第1
表に示す割合に秤量し、ボールミルに入れて混合
した。次いで、この混合物をアルゴンガス雰囲気
中1200℃で1時間熱処理を行なつた。そして、こ
れをエタノールと共にポリエチレン製のポツトミ
ル中に入れ、アルミナボールで24時間粉砕し、
10μm以下、好ましくは5μm以下の抵抗材料の粉
末を得た。なお、この粉末(抵抗体組成物)の組
成は、最初の原料の組成と実質的に同じである。
しかる後、上記抵抗材料の粉末100重量部と、有
機バインダ(ニトロセルロース10重量部をブチル
カルビトール90重量部で溶かしたもの)25重量部
とを3本ロールミルで混練して約800ポイズの抵
抗体ペーストとした。 一方、上記抵抗体ペーストを印刷するための磁
器生シートを次の方法で作製した。Al2O3粉末50
重量部、SiO2粉末20重量部、SrO粉末25重量部、
Li2O粉末1重量部、及びMgO粉末4重量部から
なるセラミツク原料粉末と、アクリル酸エステル
ポリマーの水溶液からなるバインダーと、グリセ
リンと、カルボン酸塩及び水と、をそれぞれボー
ルミルに入れて混合して、スリツプを作製し、脱
泡処理した後にドクターブレード法により厚さ
200μmの長尺の生シートを作製した。そして、
この生シートから、9mm×9mmと6mm×9mmの2
種類の生シート片を切り抜いた。 次に、第1図に示す如く、前者の生シート片1
上に、ニツケル(Ni)粉末と有機バインダとを
3:1の比で混練した導電性ペーストを200メツ
シユのスクリーンを用いて印刷し、125℃、10分
間乾燥することによつて第1図に示す如くNi導
体膜2を形成した。 次に、本発明に係わる抵抗体ペーストを導電性
ペーストと同様にスクリーン印刷し、乾燥するこ
とによつて、第1図に示す如く抵抗体膜3を形成
した。 次に、生シート片1の上に鎖線で示す大きさの
もう一方の生シート片4を積層し、100℃、150
Kg/cm2で熱圧着し、これを酸化性雰囲気中500℃
で熱処理して有機バインダをとばし、N2(98.5容
積%)+H2(1.5容積%)の還元性雰囲気中で1200
℃、2時間焼成し、第2図に示す如く、磁器層1
a,4aの中に、厚膜導体2aと厚膜抵抗体3a
とを有する混成集積回路用の多層磁器回路基板を
完成させた。なお、抵抗体3aの導体2aにかか
らない部分の大きさは、3mm×3mmであり、膜厚
は18μmである。 次に、この抵抗体3aの25℃におけるシート抵
抗をブリツジ法で測定し、且つ、25℃から125℃
の温度範囲での抵抗温度係数を測定したところ、
第1表の結果が得られた。
INDUSTRIAL APPLICATION FIELD The present invention relates to a resistance material for forming a thick film resistor etc. by firing in a non-oxidizing atmosphere. By using this resistive material, it is possible to simultaneously form a thick film resistor and a base metal wiring conductor on a common ceramic substrate. 2. Description of the Related Art Recently, multilayer ceramic substrates have come into use in order to miniaturize electronic circuit devices. In order to reduce the cost of this type of multilayer ceramic substrate, attempts have been made to form wiring conductors from base metals such as nickel. Problems to be Solved by the Invention As mentioned above, when forming a wiring conductor using a base metal, a conductive paste must be applied to an unfired ceramic sheet (raw sheet) and then fired in a non-oxidizing atmosphere. . However, a resistive material that can be fired in a non-oxidizing atmosphere at the same time as the conductive paste and has practical characteristics has not yet been developed. Therefore, in conventional multilayer ceramic substrates in which wiring conductors are formed from base metals, wiring conductors are provided between each ceramic layer, and passive elements such as resistors, active elements such as transistors, and their wiring conductors are formed on the surface of the substrate. had to be established. As a result, although the wiring pattern in the ceramic layer is rough, the wiring pattern and circuit elements are arranged densely on the surface of the ceramic substrate.
There has been a limit to the miniaturization of electronic circuit devices. The above-mentioned problems and similar problems would be solved if a resistive material was available that could be fired in a non-oxidizing atmosphere. Accordingly, it is an object of the present invention to provide a resistive material that can be fired in a non-oxidizing atmosphere. Means for Solving the Problems The resistance material of the present invention to achieve the above object contains at least one of 29.0 to 75.0 parts by weight of molybdenum boride, calcium fluoride, strontium fluoride, and barium fluoride. It consists of 1.0 to 61.0 parts by weight of metal fluoride and 10.0 to 70.0 parts by weight of glass. Function A resistor paste is made using the resistor material with the above composition, and this is printed on a raw ceramic sheet.
By firing in a non-oxidizing atmosphere, a thick film resistor with practical characteristics can be obtained. Therefore,
A base metal thick film resistor can be formed simultaneously with the formation of a thick film conductor using a base metal conductor paste such as nickel. Example 1 Next, a resistor material according to an example of the present invention and a method of forming a multilayer ceramic circuit board using the same will be described. First, 78.0 parts by weight of silicon dioxide (SiO 2 ), 5.5 parts by weight of bad lead oxide (ZnO), and zirconium oxide (ZrO 2 ).
12.0 parts by weight, 3.0 parts by weight of calcium carbonate (CaCO 3 ), and 1.5 parts by weight of aluminum oxide (Al 2 O 3 ) were mixed and melted at 1400°C for 30 minutes in an alumina crucible, and this melt was poured into water. , rapidly cooled. This glass was ground to about 50 μm in an alumina mortar, then placed in a polyethylene pot mill with ethanol, and ground for 150 hours with an alumina ball to obtain powdered glass with a particle size of 10 μm or less. Next, the above glass, Mo 2 B, and CaF 2 were mixed into a first
They were weighed in the proportions shown in the table and mixed in a ball mill. Next, this mixture was heat-treated at 1200° C. for 1 hour in an argon gas atmosphere. This was then placed in a polyethylene pot mill with ethanol and ground for 24 hours with an alumina ball.
A powder of a resistive material having a diameter of 10 μm or less, preferably 5 μm or less was obtained. Note that the composition of this powder (resistor composition) is substantially the same as that of the initial raw material.
Thereafter, 100 parts by weight of the above resistance material powder and 25 parts by weight of an organic binder (10 parts by weight of nitrocellulose dissolved in 90 parts by weight of butyl carbitol) were kneaded in a three-roll mill to obtain a resistance of approximately 800 poise. It was made into a body paste. On the other hand, a raw porcelain sheet for printing the above resistor paste was produced by the following method. Al2O3 powder 50
parts by weight, 20 parts by weight of SiO 2 powder, 25 parts by weight of SrO powder,
Ceramic raw material powder consisting of 1 part by weight of Li 2 O powder and 4 parts by weight of MgO powder, a binder consisting of an aqueous solution of acrylic acid ester polymer, glycerin, a carboxylic acid salt, and water were placed in a ball mill and mixed. After making a slip and degassing it, the thickness was adjusted using the doctor blade method.
A long raw sheet of 200 μm was produced. and,
From this raw sheet, we made 2 pieces of 9mm x 9mm and 6mm x 9mm.
Cut out different raw sheet pieces. Next, as shown in FIG. 1, the former raw sheet piece 1
A conductive paste made by kneading nickel (Ni) powder and an organic binder at a ratio of 3:1 was printed on the top using a 200 mesh screen and dried at 125°C for 10 minutes to form the pattern shown in Figure 1. A Ni conductor film 2 was formed as shown. Next, the resistor paste according to the present invention was screen printed in the same manner as the conductive paste and dried to form a resistor film 3 as shown in FIG. Next, the other raw sheet piece 4 of the size shown by the chain line is laminated on top of the raw sheet piece 1, and heated at 100℃ and 150℃.
Kg/cm 2 thermocompression bonded at 500°C in an oxidizing atmosphere.
The organic binder was blown off by heat treatment at 1200 °C in a reducing atmosphere of N 2 (98.5 vol%) + H 2 (1.5 vol%).
℃ for 2 hours, and as shown in Figure 2, the porcelain layer 1
a, 4a, a thick film conductor 2a and a thick film resistor 3a
We have completed a multilayer ceramic circuit board for hybrid integrated circuits. Note that the size of the portion of the resistor 3a that does not cover the conductor 2a is 3 mm x 3 mm, and the film thickness is 18 μm. Next, the sheet resistance of this resistor 3a at 25°C was measured by the bridge method, and from 25°C to 125°C.
When we measured the temperature coefficient of resistance in the temperature range of
The results shown in Table 1 were obtained.

【表】 上述から明らかな如く、本実施例の抵抗体ペー
ストを磁器生シートに塗布して還元性雰囲気中で
焼成することにより、厚膜抵抗体が得られる。従
つて、Ni等の卑金属ペーストと同時に焼成する
ことが出来る。このため、磁器層内に、Ni等の
ペーストによる厚膜導体と共に、厚膜抵抗を受け
ることが可能になり、混成集積回路の低コスト
化、小型化が出来る。 また、第1表から明らかな如く、 ガラス 10.0〜70.0重量部、 Mo2B 29.0〜75.0重量部、 CaF2 1.0〜61.0重量部 の組成によつて、シート抵抗172.5〜143080Ω/
□の厚膜抵抗を得ることが出来る。従つて、組成
比を適宜選択することによつて、任意の抵抗値を
得ることが出来る。 また、抵抗温度係数は−970〜+150ppm/℃に
収まるので、実用可能な抵抗を提供することが出
来る。 実施例 2 ガラスの組成が変化しても、実施例1と同様な
作用効果が得られることを確かめるために、次の
如くガラス粉末を作製した。二酸化珪素(SiO2
75.0重量部、三酸化二ホウ素(B2O3)13.0重量
部、炭酸カルシウム(CaCO3)10.0重量部、及び
酸化アルミニウム(Al2O3)2.0重量部を混合し、
実施例1と同様の手法にて粉末状のガラスを得
た。 次に、このガラスとMo2B及びCaF2を第2表に
示す比率に混合し、実施例1と同一の方法で抵抗
体組成物の粉末を得、これを使用して実施例1と
同一の方法で同一構造の多層磁器回路基板を形成
し、実施例1と同様に電気的特性を測定したとこ
ろ、第2表の結果が得られた。
[Table] As is clear from the above, a thick film resistor can be obtained by applying the resistor paste of this example to a raw porcelain sheet and firing it in a reducing atmosphere. Therefore, it can be fired simultaneously with a base metal paste such as Ni. Therefore, it becomes possible to receive a thick film resistor as well as a thick film conductor made of a paste such as Ni in the ceramic layer, thereby making it possible to reduce the cost and size of the hybrid integrated circuit. Furthermore, as is clear from Table 1, depending on the composition of 10.0 to 70.0 parts by weight of glass, 29.0 to 75.0 parts by weight of Mo 2 B, and 1.0 to 61.0 parts by weight of CaF 2 , the sheet resistance varies from 172.5 to 143080 Ω/.
A thick film resistor of □ can be obtained. Therefore, by appropriately selecting the composition ratio, any resistance value can be obtained. Furthermore, since the temperature coefficient of resistance falls within the range of -970 to +150 ppm/°C, it is possible to provide a practically usable resistance. Example 2 In order to confirm that the same effects as in Example 1 can be obtained even if the composition of the glass is changed, glass powder was prepared as follows. Silicon dioxide (SiO 2 )
75.0 parts by weight, 13.0 parts by weight of diboron trioxide (B 2 O 3 ), 10.0 parts by weight of calcium carbonate (CaCO 3 ), and 2.0 parts by weight of aluminum oxide (Al 2 O 3 ),
Powdered glass was obtained in the same manner as in Example 1. Next, this glass, Mo 2 B and CaF 2 were mixed in the ratio shown in Table 2 to obtain a powder of a resistor composition in the same manner as in Example 1. A multilayer ceramic circuit board having the same structure was formed by the method described in (1), and its electrical characteristics were measured in the same manner as in Example 1, and the results shown in Table 2 were obtained.

【表】 この実施例2から明らかなように、ガラスの組
成を変えても抵抗特性に大きな相違は見られな
い。つまり、本発明において使用されるガラスは
必ずしも特定された1つの組成に限られるもので
はない。なお、実施例1におけるSiO2−ZnO−
ZrO2−CaO−Al2O3系ガラス、実施例2のSiO2
B2O3−CaO−Al2O3系ガラスはいずれも作業点
(1×104ホイズとなる温度)が900〜1200℃のガ
ラスである。本発明の抵抗体組成物のガラスは、
実施例1及び2の組成のガラスに限ることなく、
900〜1200℃の作業点を有し、且つ環元性雰囲気
で焼成する際に金属化されやすい金属酸化物
(PbO、SnO2、Bi2O3等)を含まないものであれ
ば、どのような組成物でもよいことが確かめられ
ている。 実施例 3 弗化金属が変化しても、実施例1と同様な作用
効果が得られることを確かめるために、弗化金属
のSrF2を用意し、実施例1と同一組成のガラス
とMo2BとSrF2とを第3表の割合に秤量し、これ
を使用して、アルゴンガス雰囲気中の熱処理温度
を900℃にした他は、実施例1と同一方法で抵抗
体組成物を形成した。しかる後、実施例1と同一
方法で、抵抗体ペーストを作り、更に多層磁器回
路基板を作製し、電気的特性を測定したところ、
第3表に示す結果が得られた。
[Table] As is clear from Example 2, there is no significant difference in resistance characteristics even if the composition of the glass is changed. That is, the glass used in the present invention is not necessarily limited to one specified composition. Note that SiO 2 −ZnO− in Example 1
ZrO 2 -CaO-Al 2 O 3 -based glass, SiO 2 - of Example 2
All B 2 O 3 -CaO-Al 2 O 3 type glasses have a working point (temperature at which 1×10 4 noise is obtained) of 900 to 1200°C. The glass of the resistor composition of the present invention is
Not limited to the glasses having the compositions of Examples 1 and 2,
As long as it has a working point of 900 to 1200℃ and does not contain metal oxides (PbO, SnO 2 , Bi 2 O 3, etc.) that are easily metalized when fired in a cyclic atmosphere, what can be done? It has been confirmed that any composition may be used. Example 3 In order to confirm that the same effect as in Example 1 can be obtained even if the metal fluoride is changed, metal fluoride SrF 2 was prepared, and glass with the same composition as in Example 1 and Mo 2 were prepared. B and SrF 2 were weighed in the proportions shown in Table 3, and a resistor composition was formed using the same method as in Example 1, except that the heat treatment temperature in an argon gas atmosphere was 900°C. . After that, a resistor paste was made using the same method as in Example 1, and a multilayer ceramic circuit board was also made, and the electrical characteristics were measured.
The results shown in Table 3 were obtained.

【表】 この第3表から明らかな如く、SrF2を使用し
ても、CaF2の場合とほぼ同様な作用効果が得ら
れる。 実施例 4 硼化モリブデンとしてMo2B5、弗化金属とし
てSrF2を使用しても実施例1と同様な作用効果
が得られることを確かめるために、実施例1と同
一組成のガラス、Mo2O5、SrF2を第4表に示す
割合に秤量し、アルゴンガス雰囲気中の熱処理温
度を1000℃にした他は、実施例1と同一方法で抵
抗体組成物の粉末を作り、これを使用して実施例
1と同一方法で、抵抗体ペーストを作り、更に多
層磁器基板を作り、その電気的特性を測定したと
ころ、第4表の結果が得られた。
[Table] As is clear from Table 3, even when SrF 2 is used, almost the same effects as in the case of CaF 2 can be obtained. Example 4 In order to confirm that the same effects as in Example 1 can be obtained even if Mo 2 B 5 is used as molybdenum boride and SrF 2 is used as the metal fluoride, glass with the same composition as in Example 1, Mo 2 O 5 and SrF 2 were weighed in the proportions shown in Table 4, and a resistor composition powder was prepared in the same manner as in Example 1, except that the heat treatment temperature in an argon gas atmosphere was 1000°C. A resistor paste was made using the same method as in Example 1, and a multilayer ceramic substrate was also made, and its electrical characteristics were measured, and the results shown in Table 4 were obtained.

【表】【table】

【表】 実施例 5 実施例1の組成のガラスとMo2B5とBaF2とを
第5表に示す割合に秤量し、アルゴンガス雰囲気
中の熱処理温度を900℃にした点を除いて実施例
1と同一方法で抵抗体組成物の粉末を作製し、こ
れを使用して実施例1と同一方法、抵抗体ペース
トを作り、且つ多層磁器回路基板を作り、電気的
特性を測定したところ、第5表に示す結果が得ら
れた。この表から明らかな如く、硼化モリブデ
ン、及び弗化金属の種類が変化しても実施例1と
同様な作用効果が得られる。
[Table] Example 5 Implemented except that glass having the composition of Example 1, Mo 2 B 5 and BaF 2 were weighed in the proportions shown in Table 5, and the heat treatment temperature in an argon gas atmosphere was 900°C. A powder of a resistor composition was prepared in the same manner as in Example 1, and using this powder, a resistor paste was made in the same manner as in Example 1, and a multilayer ceramic circuit board was also made, and the electrical characteristics were measured. The results shown in Table 5 were obtained. As is clear from this table, the same effects as in Example 1 can be obtained even if the types of molybdenum boride and metal fluoride are changed.

【表】 実施例 6 硼化モリブデンをMoBとし、且つ弗化金属を
BaF2としても実施例1と同様な作用効果が得ら
れることを確かめるために、実施例1と同一組成
のガラス、MoB、BaF2を第6表に示す割合に秤
量し、実施例1と同一方法で抵抗体組成物の粉末
を作り、これを使用して実施例1と同一方法で、
ペーストを作り、更に多層磁器回路基板を作り、
電気的特性を測定したところ、第6表の結果が得
られた。
[Table] Example 6 Molybdenum boride is used as MoB, and metal fluoride is used as MoB.
In order to confirm that the same effects as in Example 1 can be obtained with BaF 2, glass, MoB, and BaF 2 having the same composition as in Example 1 were weighed in the proportions shown in Table 6, and A powder of a resistor composition was prepared by the method, and using this powder, the same method as in Example 1 was carried out.
Make a paste, then make a multilayer porcelain circuit board,
When the electrical characteristics were measured, the results shown in Table 6 were obtained.

【表】【table】

【表】 実施例 7 硼化モリブデンをMoBとし、且つ弗化金属を
複数種類としても実施例1と同様な作用効果が得
られることを確かめるために、実施例1と同一組
成のガラス、MoB、CaF2、SrF2を第7表に示す
割合に秤量し、アルゴンガス中での熱処理温度を
1100℃にした他は実施例1と同一方法で抵抗体組
成物の粉末を作り、これを使用して実施例1と同
一方法で、ペーストを作り、更に多層磁器回路基
板を作り、電気的特性を測定したところ、第7表
の結果が得られた。この結果から明らかな如く、
弗化金属を複数種としても、合計が1〜61重量部
の範囲内であれば、1種の場合と同様な作用効果
が得られる。
[Table] Example 7 In order to confirm that the same effect as in Example 1 can be obtained even when molybdenum boride is used as MoB and multiple types of metal fluorides are used, glass with the same composition as in Example 1, MoB, Weigh CaF 2 and SrF 2 in the proportions shown in Table 7, and set the heat treatment temperature in argon gas.
A powder of a resistor composition was made in the same manner as in Example 1 except that the temperature was 1100°C, and a paste was made using this in the same manner as in Example 1. A multilayer ceramic circuit board was also made, and the electrical characteristics were determined. When measured, the results shown in Table 7 were obtained. As is clear from this result,
Even if multiple types of metal fluoride are used, the same effects as when using one type of metal fluoride can be obtained as long as the total is within the range of 1 to 61 parts by weight.

【表】 実施例 8 硼化モリブデンをMoB2とし、且つ弗化金属を
SrF2及びBaF2としても実施例1と同様な作用効
果が得られることを確かめるために、実施例1と
同一組成のガラス、MoB2、SrF2、BaF2を第8
表に示す割合に秤量し、実施例1と同一方法で抵
抗体組成物の粉末を作り、これを使用して実施例
1と同一方法で、ペーストを作り、更に多層磁器
回路基板を作り、電気的特性を測定したところ、
第8表の結果が得られた。
[Table] Example 8 Molybdenum boride is MoB 2 , and metal fluoride is
In order to confirm that the same effects as in Example 1 can be obtained using SrF 2 and BaF 2 , glass having the same composition as in Example 1, MoB 2 , SrF 2 , and BaF 2 were used in the eighth example.
Weigh the proportions shown in the table, make a powder of a resistor composition in the same manner as in Example 1, use this to make a paste in the same manner as in Example 1, and further make a multilayer ceramic circuit board. When we measured the characteristics of
The results shown in Table 8 were obtained.

【表】 変形例 本発明は上述の実施例に限定されるものでな
く、例えば次の変形例が可能なものである。 (a) 弗化金属の種類を3種類にした場合、また硼
化モリブデンをMo2B、Mo2B5、MoB、MoB2
等の複数種の組み合せとした場合も実施例1と
同様な作用効果が得られることを確かめられて
いる。 (b) ガラスと硼化モリブデンと弗化金属との混合
物の焼成温度を900〜1200℃の範囲にすること
が望ましいことが確認されている。また、この
焼成は、アルゴンガス以外の不活性雰囲気、又
は真空中、又は中性雰囲気、又は還元性雰囲気
で行つてもよい。 (c) 抵抗体ペーストを作るための有機バインダ
は、エチルセルロース等の樹脂を、テレピン
油、ブチルカルビトールアセテート等の高沸点
溶剤に溶かしたものでもよい。また、このバイ
ンダの量は15〜35重量部程度が望ましい。 (d) 生シートと共に抵抗体を焼成する際の雰囲気
は中性雰囲気であつてもよい。 (e) 非酸化性雰囲気中での生シート及び抵抗体及
び導体の焼成は、1050〜1250℃の範囲で行うこ
とが望ましい。なお、この焼成の前に、400〜
600℃の酸化性雰囲気で熱処理を施して有機物
を分解させることが望ましい。 発明の効果 上述から明らかな如く、本発明に係わる抵抗材
料は、非酸化性雰囲気で焼成可能であるので、ニ
ツケル等の卑金属による導体ペーストと共に焼成
することが出来る。従つて、本発明は電子回路装
置の小型化及び低コスト化に寄与する。
[Table] Modifications The present invention is not limited to the above-described embodiments, and for example, the following modifications are possible. (a) When there are three types of metal fluorides, and molybdenum boride is used as Mo 2 B, Mo 2 B 5 , MoB, MoB 2
It has been confirmed that the same effects as in Example 1 can be obtained even when a combination of a plurality of types is used. (b) It has been confirmed that it is desirable to set the firing temperature of the mixture of glass, molybdenum boride, and metal fluoride in the range of 900 to 1200°C. Further, this firing may be performed in an inert atmosphere other than argon gas, in vacuum, in a neutral atmosphere, or in a reducing atmosphere. (c) The organic binder for making the resistor paste may be a resin such as ethyl cellulose dissolved in a high boiling point solvent such as turpentine oil or butyl carbitol acetate. Further, the amount of this binder is preferably about 15 to 35 parts by weight. (d) The atmosphere in which the resistor is fired together with the raw sheet may be a neutral atmosphere. (e) It is desirable that the raw sheet, resistor, and conductor be fired in a non-oxidizing atmosphere at a temperature in the range of 1050 to 1250°C. In addition, before this firing, 400 ~
It is desirable to perform heat treatment in an oxidizing atmosphere at 600°C to decompose organic substances. Effects of the Invention As is clear from the above, the resistance material according to the present invention can be fired in a non-oxidizing atmosphere, so it can be fired together with a conductive paste made of a base metal such as nickel. Therefore, the present invention contributes to miniaturization and cost reduction of electronic circuit devices.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例に係わる多層磁器回路
基板を作製する際の生シートと導体及び抵抗体の
パターンを示す平面図、第2図は第1図の−
線に相当する部分の焼成後の多層磁器回路基板を
示す断面図である。 1……生シート片、2……導体膜、3……抵抗
体膜、4……生シート片。
FIG. 1 is a plan view showing the green sheet and patterns of conductors and resistors when producing a multilayer ceramic circuit board according to an embodiment of the present invention, and FIG.
FIG. 2 is a cross-sectional view showing a multilayer ceramic circuit board after firing of a portion corresponding to a line. 1... raw sheet piece, 2... conductor film, 3... resistor film, 4... raw sheet piece.

Claims (1)

【特許請求の範囲】 1 硼化モリブデン29.0〜75.0重量部、 弗化カルシウム、弗化ストロンチウム、及び弗
化バリウムの内の少なくとも1種の弗化金属1.0
〜61.0重量部、 ガラス10.0〜70.0重量部 から成る抵抗材料。 2 前記硼化モリブデンは、1硼化2モリブデン
(Mo2B)、5硼化2モリブデン(Mo2B5)、1硼
化1モリブデン(MoB)、及び2硼化1モリブデ
ン(MoB2)の内の少なくとも1種である特許請
求の範囲第1項記載の抵抗材料。 3 前記ガラスは、作業点が900〜1200℃の範囲
のものである特許請求の範囲第1項又は第2項記
載の抵抗材料。
[Scope of Claims] 1. 29.0 to 75.0 parts by weight of molybdenum boride, 1.0 parts by weight of at least one metal fluoride selected from calcium fluoride, strontium fluoride, and barium fluoride.
Resistance material consisting of ~61.0 parts by weight and 10.0 to 70.0 parts by weight of glass. 2 The molybdenum boride includes molybdenum boride di(Mo 2 B), molybdenum pentaboride (Mo 2 B 5 ), molybdenum boride monoboride (MoB), and molybdenum diboride (MoB 2 ). The resistance material according to claim 1, which is at least one of the following. 3. The resistance material according to claim 1 or 2, wherein the glass has a working point in the range of 900 to 1200°C.
JP59197655A 1984-09-20 1984-09-20 Resistance material Granted JPS6175501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59197655A JPS6175501A (en) 1984-09-20 1984-09-20 Resistance material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59197655A JPS6175501A (en) 1984-09-20 1984-09-20 Resistance material

Publications (2)

Publication Number Publication Date
JPS6175501A JPS6175501A (en) 1986-04-17
JPH027161B2 true JPH027161B2 (en) 1990-02-15

Family

ID=16378110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59197655A Granted JPS6175501A (en) 1984-09-20 1984-09-20 Resistance material

Country Status (1)

Country Link
JP (1) JPS6175501A (en)

Also Published As

Publication number Publication date
JPS6175501A (en) 1986-04-17

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