JPH03126201A - Resistor composition - Google Patents
Resistor compositionInfo
- Publication number
- JPH03126201A JPH03126201A JP1265744A JP26574489A JPH03126201A JP H03126201 A JPH03126201 A JP H03126201A JP 1265744 A JP1265744 A JP 1265744A JP 26574489 A JP26574489 A JP 26574489A JP H03126201 A JPH03126201 A JP H03126201A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- glass
- parts
- powder
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 14
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract 2
- 239000000843 powder Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052791 calcium Inorganic materials 0.000 abstract description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 abstract description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910000480 nickel oxide Inorganic materials 0.000 description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- -1 alkaline earth metal carbonates Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- BIOOACNPATUQFW-UHFFFAOYSA-N calcium;dioxido(dioxo)molybdenum Chemical compound [Ca+2].[O-][Mo]([O-])(=O)=O BIOOACNPATUQFW-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は抵抗体組成物に関し、特にたとえば非酸化雰
囲気中で焼成することによって、厚膜抵抗体またはこれ
に類似の抵抗体を形成することができる、抵抗体組成物
に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a resistor composition, and particularly to a resistor composition for forming a thick film resistor or similar resistor by firing in a non-oxidizing atmosphere, for example. The present invention relates to a resistor composition that can be used.
（従来技術）
従来の抵抗体組成物としては、たとえばモリブデン酸カ
ルシウム、フン化カルシウムおよびガラスを含有したも
のがあった。このような抵抗体組成物を用いて多層セラ
ミクス回路基板を作製する方法が、特開昭６２−９２４
０３〜９２４０８号公報、特開昭６２−１０４００１〜
１０４００５号公報および特開昭６３−２７２００２〜
２７２００４号公報に示されている。これらの明細書中
には、セラミクスグリーンシートに卑金属である銅の導
体ペーストを塗布し、さらに上述の抵抗体組成物からな
る抵抗体ペーストを塗布したものを非酸化雰囲気中で焼
成する方法が示されている。(Prior Art) Conventional resistor compositions include, for example, calcium molybdate, calcium fluoride, and glass. A method for producing a multilayer ceramic circuit board using such a resistor composition is disclosed in Japanese Patent Laid-Open No. 62-924.
Publication No. 03-92408, JP-A-62-104001~
Publication No. 104005 and JP-A-63-272002~
It is shown in the No. 272004 publication. These specifications describe a method in which a ceramic green sheet is coated with a conductor paste of copper, which is a base metal, and then a resistor paste made of the above-mentioned resistor composition is coated, and then fired in a non-oxidizing atmosphere. has been done.
このように、非酸化雰囲気中で焼成することによって、
厚膜導体と厚膜抵抗体とを同時に形成した多層セラミク
ス回路基板を得ることができる。In this way, by firing in a non-oxidizing atmosphere,
A multilayer ceramic circuit board in which a thick film conductor and a thick film resistor are formed simultaneously can be obtained.
（発明が解決しようとする課題）
しかしながら、このような抵抗体組成物を用いた厚膜抵
抗体では、抵抗値が最大でも４３５にΩ７口である。と
ころが、回路が低消費電力化する中で、より大きな抵抗
値を得ることができる抵抗体組成物が求められている。(Problem to be Solved by the Invention) However, a thick film resistor using such a resistor composition has a maximum resistance value of 435Ω and 7Ω. However, as the power consumption of circuits becomes lower, there is a need for a resistor composition that can obtain a larger resistance value.
それゆえに、この発明の主たる目的は、非酸化雰囲気中
で焼成して抵抗体を形成することができ、かつ１００に
Ω／口〜ＩＯＭΩ／口の抵抗値を存する抵抗体を得るこ
とができる、抵抗体組成物を提供することである。Therefore, the main object of the present invention is to form a resistor by firing in a non-oxidizing atmosphere, and to obtain a resistor having a resistance value of 100 Ω/mm to IOM Ω/mm. An object of the present invention is to provide a resistor composition.
（課題を解決するための手段）
この発明は、ＮｉＯを５０〜９５重量部と、−般式がａ
Ｌｉ、Ｏ＋ｂＲＯ＋ｃＢｚ Ｏｓ ＋（１００ａ ｂ
ｃ）ＳｉＯｚ （ただし、ＲはＭｇ。(Means for Solving the Problems) This invention provides 50 to 95 parts by weight of NiO, and the general formula is a.
Li, O+bRO+cBz Os+(100a b
c) SiOz (R is Mg.
Ｃａ、Ｓｒ、Ｂａの中から選ばれる少なくとも１種類、
ａ、ｂおよびＣはモル％）で表され、ａ。At least one type selected from Ca, Sr, and Ba,
a, b and C are expressed in mol%); a.
ｂおよびＣが、それぞれ、０≦ａく２０．１０≦ｂく５
５．０≦Ｃ〈４０の範囲にあるガラスを５〜５０重量部
とを含む、抵抗体組成物である。b and C are each 0≦a×20.10≦b×5
A resistor composition containing 5 to 50 parts by weight of glass in the range of 5.0≦C<40.
（発明の効果）
この発明の抵抗体組成物をペースト状にした抵抗体材料
を絶縁体セラミクスからなるグリーンシート上に印刷し
、非酸化雰囲気中で焼成すれば、１００にΩ／口〜ＩＯ
ＭΩ／口の抵抗値を有する厚膜抵抗体を得ることができ
る。したがって、卑金属である銅の導体ペーストによる
厚膜導体の形成と同時に、大きな抵抗値を有する厚膜抵
抗体を形成することができる。(Effects of the Invention) If a resistor material made of a paste of the resistor composition of the present invention is printed on a green sheet made of insulating ceramics and fired in a non-oxidizing atmosphere, the resistance can be reduced to 100 Ω/unit to IO.
Thick film resistors with resistance values of MΩ/mouth can be obtained. Therefore, a thick film resistor having a large resistance value can be formed simultaneously with the formation of a thick film conductor using conductor paste of copper, which is a base metal.
この発明の上述の目的、その他の目的、特徴および利点
は、図面を参照して行う以下の実施例の詳細な説明から
一層明らかとなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
（実施例）
まず、ガラスの原料として、二酸化珪素（ＳｉＯ□）、
酸化ホウ素（Ｂ２０３ ） 、炭酸リチウム（Ｌ ｉ、
Ｃｏ：ｌ）およびアルカリ土類金属の炭酸塩を準備した
。これらの原料を別表に示す割合となるように秤量し、
ボールミルで１６時間混式混合した後、蒸発乾燥して混
合粉末を得た。得られた混合粉末をアルミナ類のるつぼ
に入れて１３００℃で１時間放置し、急冷してガラス化
した。そして、２００メツシユの篩を通過するようにボ
ールミルを用いて粉砕し、ガラス粉末を得た。(Example) First, silicon dioxide (SiO□),
Boron oxide (B203), lithium carbonate (L i,
Co:l) and alkaline earth metal carbonates were prepared. Weigh these raw materials in the proportions shown in the attached table,
After mixing in a ball mill for 16 hours, the mixture was evaporated and dried to obtain a mixed powder. The obtained mixed powder was placed in an alumina crucible and left at 1300° C. for 1 hour, then rapidly cooled and vitrified. Then, the powder was ground using a ball mill so as to pass through a 200-mesh sieve to obtain a glass powder.
得られたガラス粉末と酸化ニッケル（Ｎｉｐ）粉末とを
別表に示す重量部となるように秤量し、ボールミルで４
時間湿式混合した後、蒸発乾燥してガラス粉末と酸化ニ
ッケル粉末との混合粉末を得た。また、有機結合剤とし
てのエチルセルロース１ｏｘｉｔ部を溶剤としてのブチ
ルカルピトール９０重量部に溶かしたものからなる有機
バインダ溶液を準備した。そして、ガラス粉末と酸化ニ
ッケル粉末との混合粉末１００重量部に有機バインダ溶
液２５重量部を加えて、３本ロールミルで混練して抵抗
体ペーストを得た。The obtained glass powder and nickel oxide (Nip) powder were weighed so that the weight parts were as shown in the attached table, and 4 parts were mixed in a ball mill.
After wet mixing for a period of time, the mixture was evaporated and dried to obtain a mixed powder of glass powder and nickel oxide powder. In addition, an organic binder solution was prepared in which 1 oxit part of ethyl cellulose as an organic binder was dissolved in 90 parts by weight of butylcarpitol as a solvent. Then, 25 parts by weight of an organic binder solution was added to 100 parts by weight of a mixed powder of glass powder and nickel oxide powder, and the mixture was kneaded in a three-roll mill to obtain a resistor paste.
一方、上述の抵抗体ペーストを印刷するためのグリーン
シートを次の方法で作製した。まず、酸化珪素５５重世
部、酸化バリウム３０重量部、酸化アルミニウム５重量
部、酸化ホウ素５重量部および酸化カルシウム５重量部
からなるセラミクス原料粉末、アクリル系バインダおよ
び有機溶剤としてのトルエンを準備した。これらの材料
を秤量してボールミルで２４時間混合した後脱泡処理し
、ドクターブレード法によって厚さ２００μｍのグリー
ンシートを作製した。そして、このグリーンシートから
２０ｉ＋■×２０ｍｍのグリーンシート片を切り抜いた
。On the other hand, a green sheet for printing the above-mentioned resistor paste was produced by the following method. First, ceramic raw material powder consisting of 55 parts by weight of silicon oxide, 30 parts by weight of barium oxide, 5 parts by weight of aluminum oxide, 5 parts by weight of boron oxide, and 5 parts by weight of calcium oxide, an acrylic binder, and toluene as an organic solvent were prepared. . These materials were weighed and mixed in a ball mill for 24 hours, followed by defoaming treatment, and a green sheet with a thickness of 200 μm was produced using a doctor blade method. Then, a green sheet piece of 20i+■×20mm was cut out from this green sheet.
また、次のような方法で銅の導体ペーストを作製した。In addition, a copper conductor paste was produced by the following method.
まず、銅粉末と有機バインダ溶液とを準備した。有機バ
インダ溶液は、有機結合剤としてのエチルセルロース１
０重量部を溶剤としてのテレピン油９０重量部に溶かし
て作製した。そして、銅粉末１００重量部に有機バイン
ダ溶液２５重量部を加えて、３本ロールミルで混練して
導体ペーストを得た。First, copper powder and an organic binder solution were prepared. The organic binder solution contains ethyl cellulose 1 as an organic binder.
It was prepared by dissolving 0 parts by weight in 90 parts by weight of turpentine oil as a solvent. Then, 25 parts by weight of an organic binder solution was added to 100 parts by weight of copper powder, and the mixture was kneaded in a three-roll mill to obtain a conductor paste.
次に、第１図に示すように、グリーンシート片１０の一
方主面上に、間隔を隔てて導体ペースト１２を印刷した
。導体ペースト１２は、２００メツシユのスクリーンを
用いて印刷し、１２０℃で５分間乾燥した。その後、一
部分が２つの導体ペースト１２に重なるように、グリー
ンシート片１０上に抵抗体ペースト１４を印刷した。抵
抗体ペースト１４は、２００メツシユのスクリーンを用
いて印刷し、１２０℃で５分間乾燥した。なお、抵抗体
ペースト１４の導体ペースト１２に重なっていない部分
の大きさは４１ｍ×６ｍｌであり、厚さは２０．ｃｒｍ
である。Next, as shown in FIG. 1, conductor pastes 12 were printed on one main surface of the green sheet piece 10 at intervals. The conductive paste 12 was printed using a 200 mesh screen and dried at 120° C. for 5 minutes. Thereafter, a resistor paste 14 was printed on the green sheet piece 10 so that a portion thereof overlapped with the two conductor pastes 12. The resistor paste 14 was printed using a 200 mesh screen and dried at 120° C. for 5 minutes. The size of the portion of the resistor paste 14 that does not overlap the conductor paste 12 is 41 m x 6 ml, and the thickness is 20 mm. crm
It is.
さらに、第２図に示すように、グリーンシート片１０の
上に別のグリーンシート片１６を積層し、８０℃、
４００ ｋｇ／ｃｒＡで熱圧着して化ユニ・ノドを形成
した。この化ユニ・ントのグリーンシート片１６の導体
ペースト１２に対応する部分に、スル−ホール１８を形
成した。そして、スルーホール８の内壁とグリーンシー
ト片１６のスルーホール１８周辺部に導体ペーストを２
００メツシユのスクリーンで印刷し、電極バ・ノド２０
を形成した。Furthermore, as shown in FIG. 2, another green sheet piece 16 is laminated on top of the green sheet piece 10, and
A chemical bond was formed by thermocompression bonding at 400 kg/crA. A through hole 18 was formed in a portion of the green sheet piece 16 of this chemical unit corresponding to the conductive paste 12. Then, apply two coats of conductive paste on the inner wall of the through hole 8 and around the through hole 18 of the green sheet piece 16.
Printed with 00 mesh screen, electrode base 20
was formed.
得られた生ユニットをＮ２およびＨ．Ｏの混合ガスを用
いて電気炉中で９４０〜１０２０℃で２時間焼成し、厚
膜抵抗体を内蔵したセラミクス基板を作製した。そして
、セラミクス基板内の抵抗体の抵抗値をデジタルマルチ
メータで２５℃において測定し、抵抗体の焼成後の寸法
からシート抵抗を算出して別表に示した。The resulting raw unit was exposed to N2 and H. The ceramic substrate was baked at 940 to 1020° C. for 2 hours using a mixed gas of O in an electric furnace to produce a ceramic substrate with a built-in thick film resistor. Then, the resistance value of the resistor in the ceramic substrate was measured at 25° C. with a digital multimeter, and the sheet resistance was calculated from the dimensions of the resistor after firing and is shown in the attached table.
次に、ガラスに対して酸化二・ノケルの組成範囲を限定
した理由について説明する。Next, the reason for limiting the composition range of di-Nokel oxide with respect to glass will be explained.
試料番号１のように、ガラスに対する酸化ニッケルの含
有量が９５重量部より多くなると、抵抗値が大きくなり
すぎ、緻密に焼結することができなくなる。また、試料
番号６のように、ガラスに対する酸化ニッケルの含有量
が５０重量部より少ないと、抵抗値が大きくなりすぎる
。If the content of nickel oxide to the glass is more than 95 parts by weight, as in sample number 1, the resistance value becomes too large and dense sintering becomes impossible. Moreover, when the content of nickel oxide in the glass is less than 50 parts by weight, as in sample number 6, the resistance value becomes too large.
さらに、ガラスにおけるＬｉ２０成分，ＲＯ酸成分よび
Ｂ２ ０ｈ成分の組成範囲ａ，ｂおよびＣを限定した理
由について説明する。つまり、試料番号８のようにａが
２０モル％以上になるか、試料番号２２〜２５のように
ｂが５５モル％以上になるか、または試料番号２８のよ
うにＣが４０モル％以上になると、抵抗値が大きくなり
すぎる。Furthermore, the reason for limiting the composition ranges a, b, and C of the Li20 component, RO acid component, and B20h component in the glass will be explained. In other words, a is 20 mol% or more as in sample number 8, b is 55 mol% or more as in sample numbers 22 to 25, or C is 40 mol% or more as in sample number 28. Then, the resistance value becomes too large.
また、試料番号１４〜１７のようにｂが１０モル％より
少ないと、抵抗体が緻密に焼結しない。Further, when b is less than 10 mol % as in sample numbers 14 to 17, the resistor is not sintered densely.
それに対して、この発明の抵抗体組成物を用いれば、非
酸化雰囲気中で焼成して抵抗体を形成することができ、
しかも１００にΩ／口から１０Ｍ９７口の抵抗値を有す
る抵抗体を得ることができる。On the other hand, if the resistor composition of the present invention is used, a resistor can be formed by firing in a non-oxidizing atmosphere.
Furthermore, it is possible to obtain a resistor having a resistance value of 100Ω/Ω to 10M97Ω.
第１図はグリーンシート片上に導体ペーストおよび抵抗
体ペーストを印刷した状態を示す斜視図である。
第２図はこの発明の抵抗体組成物を用いた抵抗体の抵抗
値を測定するために作製された生ユニットの斜視図であ
る。
図において、１０および１６はグリーンシート片、１２
は導体ペースト、１４は抵抗体ペースト、１日はスルー
ホール、２０は電極パッドを示す。FIG. 1 is a perspective view showing a state in which conductor paste and resistor paste are printed on a piece of green sheet. FIG. 2 is a perspective view of a raw unit manufactured for measuring the resistance value of a resistor using the resistor composition of the present invention. In the figure, 10 and 16 are green sheet pieces, 12
14 is a conductor paste, 14 is a resistor paste, 1 is a through hole, and 20 is an electrode pad.
Claims (1)
００−ａ−ｂ−ｃ）ＳｉＯ＿２（ただし、ＲはＭｇ，Ｃ
ａ，Ｓｒ，Ｂａの中から選ばれる少なくとも１種類、ａ
，ｂおよびｃはモル％）で表され、ａ，ｂおよびｃが、
それぞれ ０≦ａ＜２０ １０≦ｂ＜５５ ０≦ｃ＜４０ の範囲にあるガラスを５〜５０重量部含む、抵抗体組成
物。[Claims] 50 to 95 parts by weight of NiO, and the general formula is aLi_2O+bRO+cB_2O_3+(1
00-a-b-c) SiO_2 (where R is Mg, C
At least one type selected from a, Sr, Ba, a
, b and c are expressed as mol%), and a, b and c are
A resistor composition containing 5 to 50 parts by weight of glass in the ranges of 0≦a<20, 10≦b<55, and 0≦c<40, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265744A JPH03126201A (en) | 1989-10-11 | 1989-10-11 | Resistor composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265744A JPH03126201A (en) | 1989-10-11 | 1989-10-11 | Resistor composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03126201A true JPH03126201A (en) | 1991-05-29 |
Family
ID=17421396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1265744A Pending JPH03126201A (en) | 1989-10-11 | 1989-10-11 | Resistor composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03126201A (en) |
-
1989
- 1989-10-11 JP JP1265744A patent/JPH03126201A/en active Pending
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