JPS6199207A - High-permeability porcelain composition - Google Patents
High-permeability porcelain compositionInfo
- Publication number
- JPS6199207A JPS6199207A JP59218533A JP21853384A JPS6199207A JP S6199207 A JPS6199207 A JP S6199207A JP 59218533 A JP59218533 A JP 59218533A JP 21853384 A JP21853384 A JP 21853384A JP S6199207 A JPS6199207 A JP S6199207A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- temperature
- dielectric constant
- composition
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、磁器組成物、特に1200℃程度の低温で焼
結でき、広い温度範囲にわたって誘電率の変化率が小さ
く、誘電率が大きく、かつ誘電損失め少ない優れた誘電
体磁器組成物に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention provides a ceramic composition that can be sintered at a low temperature of about 1200°C, has a small rate of change in dielectric constant over a wide temperature range, has a large dielectric constant, The present invention also relates to an excellent dielectric ceramic composition with low dielectric loss.
(従来の技術)
従来、誘電率が高<、誘電率の温度変化の小さな磁器組
成物として、BaTiO3にNb、O,−MnOを添加
したもの(特公昭57−41042)、Nb、0.−C
oO等を添加したもの(Electrocompone
nt 5cience andTec、、1976、V
ol、2 、P、241〜247)、Nb2O5MgO
を添加したもの(特開昭48−53297)、NbzO
s −MgO−CaTi0tを添加したもの(特公昭5
7−23366)、C0NbzObLaz03を添加し
たもの(特開昭57−88612)など多(のちのが知
られていた。(Prior Art) Conventionally, ceramic compositions with a high dielectric constant and a small temperature change in dielectric constant have been prepared by adding Nb, O, -MnO to BaTiO3 (Japanese Patent Publication No. 57-41042), Nb, 0. -C
oO etc. (Electrocomponent)
nt 5science and Tec, 1976, V
ol, 2, P, 241-247), Nb2O5MgO
(Japanese Unexamined Patent Publication No. 48-53297), NbzO
s -MgO-CaTi0t added (Special public interest
7-23366), one to which C0NbzObLaz03 was added (Japanese Patent Application Laid-Open No. 57-88612), and many others (later known).
しかしながら、それらの組成物を焼結する温度は、いず
れも1350〜1400℃の高温である。そのため、こ
れを積層形コンデンサーに利用する場合、内部電極材料
として、この高温の焼結温度に耐え得る白金、パラジウ
ム等の高価な貴金属を使うことが必要であり、コストア
ップの最大の原因になっていた。それ故、積層形コンデ
ンサーを安価に製造するには、銀を主成分とする安価な
金属を内部電極に使用できるような、1200℃程度の
低温で焼結できる磁器組成物が望まれてきている。′現
在までに低温で焼結できる磁器組成物として、BaTi
O3にビスマス化合物を添加した組成物が知られている
が、それらは焼成時に成分の蒸発が著しく安定した性能
が得られに(いこと、さらに、高周波特性における誘電
損失が大きいこと等の欠点があ”す、積層形コンデンサ
ー用の磁器組成物として未だ満足できるものではない。However, the temperature at which these compositions are sintered is a high temperature of 1350 to 1400°C. Therefore, when using this in multilayer capacitors, it is necessary to use expensive noble metals such as platinum and palladium that can withstand this high sintering temperature as the internal electrode material, which is the biggest cause of cost increase. was. Therefore, in order to manufacture multilayer capacitors at low cost, there is a desire for a porcelain composition that can be sintered at a low temperature of about 1200°C, which allows the use of inexpensive metals mainly composed of silver for the internal electrodes. . 'Currently, BaTi is a porcelain composition that can be sintered at low temperatures.
Compositions in which a bismuth compound is added to O3 are known, but these have drawbacks such as extremely stable performance due to the evaporation of the components during firing (in addition, large dielectric loss in high frequency characteristics). Yes, it is still not satisfactory as a ceramic composition for multilayer capacitors.
また、ビスマス化合物を含有せずに比較的低温で焼結で
きる組成物として、BaTrO3にNdzO,、Nb、
o5SrO□、MnO□、CoOを添加したものが知ら
れている(特開昭57−92!575)。しかし、該組
成物の焼結温度は1250°Cであり、さらに、得られ
る磁器の誘電損失(tan δ)の値は1%と大きく、
特性的にも満足できるものではない。In addition, as a composition that does not contain a bismuth compound and can be sintered at a relatively low temperature, BaTrO3 is combined with NdzO, Nb,
Those to which o5SrO□, MnO□, and CoO are added are known (Japanese Unexamined Patent Publication No. 57-92!575). However, the sintering temperature of the composition is 1250°C, and the dielectric loss (tan δ) of the resulting porcelain is as large as 1%.
The characteristics are also not satisfactory.
(発明が解決しようとする問題点)
本発明者らは、ビスマス化合物を含有することなく低温
で焼結でき、なおかつ誘電率が高く、誘電率の温度変化
率が、JISの特級YのB特あるいはEIAのX7R特
性のように小さく、誘電損失の小さい誘電体磁器組成物
を得ることを目的とし、以下の発明に至った。(Problems to be Solved by the Invention) The present inventors have discovered an object that can be sintered at low temperatures without containing a bismuth compound, has a high dielectric constant, and has a temperature change rate of dielectric constant of B characteristic of JIS special grade Y. Alternatively, with the aim of obtaining a dielectric ceramic composition having a small dielectric loss similar to the X7R characteristic of EIA, the following invention was achieved.
(問題点を解決するための手段)
特開昭57−208003の明細書には、組成物中のC
eO□は焼成温度を低下せしめる効果があると記載され
ている。しかし、実施例においてCeO□を0.10〜
0.29重量%添加したBaTiOs Coz03
NbzOs−CeOz −TiO:+の配合物の焼結
温度は1350〜1400°Cであり、低温焼結の点で
満足できるものではない。(Means for solving the problem) The specification of JP-A-57-208003 describes that C in the composition
It is stated that eO□ has the effect of lowering the firing temperature. However, in the examples, CeO□ is 0.10~
BaTiOs Coz03 added at 0.29% by weight
The sintering temperature of the NbzOs-CeOz-TiO:+ blend is 1350 to 1400°C, which is not satisfactory in terms of low-temperature sintering.
、 また、BaTi0:+にNbzOs /MgOの
モル比を2.3〜4の範囲になるようにNbzosとF
′I、、oを加え、これに希土類を0.1〜0.5重量
%添加した組成物が特公昭55−19007に示され、
実施例において、焼結の温度は1200〜1380°C
と記載されている。しかし、該発明の組成を用いても、
1200°Cでは焼結は不十分で、絶縁抵抗値も小さい
ものであった。該発明の組成で希土類酸化物を0.5重
量%以上に増やすことにより、1200℃で十分焼結し
、絶縁抵抗値も大きくなる。しかし、誘電率の温度変化
率は大きくなり、望ましい温度特性のものは得られない
。In addition, Nbzos and F were added to BaTi0:+ so that the molar ratio of NbzOs/MgO was in the range of 2.3 to 4.
A composition in which 0.1 to 0.5% by weight of a rare earth element is added to this is disclosed in Japanese Patent Publication No. 55-19007.
In the examples, the sintering temperature is 1200-1380°C
It is stated that. However, even if the composition of the invention is used,
At 1200°C, sintering was insufficient and the insulation resistance value was low. By increasing the rare earth oxide to 0.5% by weight or more in the composition of the invention, sufficient sintering can be achieved at 1200° C., and the insulation resistance value can also be increased. However, the temperature change rate of the dielectric constant becomes large, and desirable temperature characteristics cannot be obtained.
そこで、本発明者らは、低温焼結性を保ち、なおかつ高
い誘電率と良好な温度特性、低いtan δ値を持つ組
成について鋭意研究を重ねた結果、本発明の組成物を見
出した。すなわち、本発明の磁器組成物は、チタン酸バ
リウム95.20〜98.58重量%、酸化セリウム0
.52〜1.50重量%、酸7化ニオブ0.85〜3.
00重量%、酸化マグネシウム0.05〜0.35重量
%を含み、かつ酸化マグネシウムに対する酸化ニオブの
モル比がl:o、4ないし1:2.2の範囲にあること
を特徴とする。Therefore, the present inventors conducted extensive research on a composition that maintains low-temperature sinterability, yet has a high dielectric constant, good temperature characteristics, and a low tan δ value, and as a result, they discovered the composition of the present invention. That is, the porcelain composition of the present invention contains 95.20 to 98.58% by weight of barium titanate and 0% by weight of cerium oxide.
.. 52-1.50% by weight, niobium heptaoxide 0.85-3.
00% by weight, 0.05-0.35% by weight of magnesium oxide, and the molar ratio of niobium oxide to magnesium oxide is l:o, in the range of 4 to 1:2.2.
本発明の組成範囲および組成比のものは、1200℃程
度の低温で焼結が可能となり、比誘電率も2000程度
と高く、広い温度範囲で誘電率の温度変化率も小さい。The composition range and composition ratio of the present invention can be sintered at a low temperature of about 1200° C., has a high dielectric constant of about 2000, and has a small temperature change rate of dielectric constant over a wide temperature range.
さらに驚くべきことには、誘電損失(tan δ)も0
.7%以下と小さく、従来報告されているものに比べ著
しく改善されたものである。Even more surprisingly, the dielectric loss (tan δ) is also 0.
.. It is small at 7% or less, which is a significant improvement compared to what has been previously reported.
積層コンデンサーの場合には、tan δのとくに小さ
い組成物が望まれており、その点においても、本発明の
磁器組成物は工業的価値の大きいものである。In the case of multilayer capacitors, compositions with particularly low tan δ are desired, and in this respect as well, the ceramic composition of the present invention has great industrial value.
本発明で使用されるチタン酸バリウムは、固相法、液相
法、蓚酸塩法、アルコキシド法等のいずれの製法より得
られるものでもよい。平均粒径が0.07〜065 μ
mで粒径のそろったものを用いた場合、均一な微構造の
磁器が得られ、絶縁抵抗値がさらに大きくなり、その値
のばらつきも小さいものになる。また、本発明では、酸
化セリウム、酸化ニオブ、酸化マグネシウムとして酸化
物をそのまま用いることができるが、水酸化物、炭酸塩
、硝酸塩、蓚酸塩、アルコキシド等、焼結温度以下で分
解し酸化物となるものであれば、いずれのものも使用で
きる。酸化物となった時の平均粒径が3μm以下である
ものが、より好適に使用できる。The barium titanate used in the present invention may be obtained by any production method such as a solid phase method, a liquid phase method, an oxalate method, or an alkoxide method. Average particle size is 0.07~065μ
When using particles with uniform particle size m, a porcelain with a uniform microstructure is obtained, the insulation resistance value becomes even larger, and the variation in the value becomes smaller. In the present invention, oxides such as cerium oxide, niobium oxide, and magnesium oxide can be used as they are, but hydroxides, carbonates, nitrates, oxalates, alkoxides, etc. decompose below the sintering temperature and form oxides. Any one can be used as long as it is suitable. Those having an average particle size of 3 μm or less when converted into oxides can be used more preferably.
本発明における磁器組成物中のチタン酸バリウムの割合
は、BaTrO:+とじて95.20〜98.58重量
%であり、その割合が98.58重量%を超えると焼結
困難で、さらに、誘電率の温度変化率も太き(なる。9
5.20重量%未満では誘電率が小さく、実用的でない
。酸化セリウムの割合は、CeO□として0.52〜1
.50重重景であり、その割合が0.52重量%未満で
は焼結困難で、絶縁抵抗値が低くなる。1.50重量%
を超えると誘電率の温度変化率が大きくなる。酸化ニオ
ブの割合は、NbzOsとして0.85〜3.00重量
%であり、その割合が0.85重量%未満では焼結困難
となり、3.00重量%を超えると誘電率が小さく、温
度変化率も大きくなる。酸化マグネシウムの割合は、M
gOとして0.05〜0.35重重量であり、その割合
が0.05重量%未満では温度変化率が大きく 、0.
35重量%を超えると誘電率が小さい。MgOとNb2
O5のモル比は0.4〜2.2の範囲であり、そのモル
比が0.4未満では誘電率が小さく 、2.2を超える
と誘電率の温度変化率が大きく、tan δも大きくな
る。また、MgOとCeO,のモル比は3/4〜5/4
の範囲にある場合、高誘電率で、温度特性も良好になり
好ましい。The proportion of barium titanate in the porcelain composition of the present invention is 95.20 to 98.58% by weight including BaTrO:+, and if the proportion exceeds 98.58% by weight, sintering is difficult; The temperature change rate of the dielectric constant also increases (becomes 9).
If it is less than 5.20% by weight, the dielectric constant is too small to be practical. The proportion of cerium oxide is 0.52 to 1 as CeO□
.. If the proportion is less than 0.52% by weight, sintering is difficult and the insulation resistance value becomes low. 1.50% by weight
If it exceeds , the rate of change in dielectric constant with temperature increases. The proportion of niobium oxide is 0.85 to 3.00% by weight as NbzOs. If the proportion is less than 0.85% by weight, sintering becomes difficult, and if it exceeds 3.00% by weight, the dielectric constant is small and temperature changes The rate also increases. The proportion of magnesium oxide is M
It is 0.05 to 0.35% by weight as gO, and if the proportion is less than 0.05% by weight, the rate of temperature change will be large;
If it exceeds 35% by weight, the dielectric constant will be low. MgO and Nb2
The molar ratio of O5 is in the range of 0.4 to 2.2, and when the molar ratio is less than 0.4, the dielectric constant is small, and when it exceeds 2.2, the temperature change rate of the dielectric constant is large, and tan δ is also large. Become. Also, the molar ratio of MgO and CeO is 3/4 to 5/4
If it is within this range, the dielectric constant is high and the temperature characteristics are also good, which is preferable.
(実施例) 以下、本発明を実施例によって詳細に説明する。(Example) Hereinafter, the present invention will be explained in detail with reference to Examples.
出発原料として、SEM粒径の平均粒径が0.2〜0.
3μmで、比表面積が5〜8rd/gであるチタン酸バ
リウムに、酸化ニオブ、酸化セリウム2、 お
よび酸化−グネシウムを第1表の割合で添加し、純水番
加え混合する。混合物を乾燥した後に、粘結剤としてポ
リビニルアルコールを適当量加え、’l t / cr
lの成形圧力で直径15mm、厚さ0.6mmの円板状
成形物を作成した。次に、これを1200℃で3時間焼
結した。焼結した円板の両端面に10mmφの銀電極を
740℃で焼付け、それぞれの電気特性を評価した。こ
こで、誘電率と誘電損失(tan δ)をLCRメータ
ーを用いて1kHzで測定した。絶縁抵抗値は高絶縁抵
抗計を用い、500 Vの電圧を印加した場合の読み取
り値である。誘電率の変化率%は20℃を基準とした。As a starting material, the average particle size of SEM particle size is 0.2 to 0.
Niobium oxide, cerium 2 oxide, and gnesium oxide are added to barium titanate having a diameter of 3 μm and a specific surface area of 5 to 8 rd/g in the proportions shown in Table 1, and the pure water number is added and mixed. After drying the mixture, add an appropriate amount of polyvinyl alcohol as a binder and make 'lt/cr
A disc-shaped molded product with a diameter of 15 mm and a thickness of 0.6 mm was produced at a molding pressure of 1. Next, this was sintered at 1200°C for 3 hours. Silver electrodes with a diameter of 10 mm were baked on both end faces of the sintered disk at 740° C., and the electrical properties of each electrode were evaluated. Here, the dielectric constant and dielectric loss (tan δ) were measured at 1 kHz using an LCR meter. The insulation resistance value is a value read when a voltage of 500 V is applied using a high insulation resistance meter. The rate of change in dielectric constant (%) was based on 20°C.
第1表において、試料階1,2,3,9,10,11,
17.18は本発明の範囲外のものである。In Table 1, sample floors 1, 2, 3, 9, 10, 11,
17.18 are outside the scope of this invention.
第1表より明らかなように、本発明の範囲内のものは1
200℃で焼結可能で、その磁器特性も比誘電率が20
00程度と高い値を示し、誘電率の変化率も小さく、か
つ誘電損界が小さいことがわかる。As is clear from Table 1, those within the scope of the present invention are 1
It can be sintered at 200℃, and its porcelain properties have a relative permittivity of 20.
It can be seen that the value is as high as about 00, the rate of change in dielectric constant is small, and the dielectric loss field is small.
(発明の効果)
以下のように、零発−により次の効果が見出された。
1(1)ビスマス化合物を含まず、1200″C程
度の低温焼結が可能である。(Effects of the Invention) As described below, the following effects were found by zero firing.
1(1) Does not contain bismuth compounds and can be sintered at a low temperature of about 1200″C.
(2)特性面において比誘電率が2000以上と高く、
しかも、その温度による変化率が小さい。(2) In terms of characteristics, the dielectric constant is high at over 2000,
Moreover, the rate of change due to temperature is small.
(3)誘電損失が小さい。(3) Low dielectric loss.
したがって、本発明の磁器組成物は、電気特性的にもき
わめて優れており、コスト面からもきわめて有利である
ので、工業上価値の大きいものである。Therefore, the ceramic composition of the present invention has excellent electrical properties and is very advantageous in terms of cost, so it is of great industrial value.
Claims (1)
セリウム0.52〜1.50重量%、酸化ニオブ0.8
5〜3.00重量%、酸化マグネシウム0.05〜0.
35重量%を含み、かつ酸化マグネシウムに対する酸化
ニオブのモル比が1:0.4ないし1:2.2の範囲に
あることを特徴とする高誘電率系磁器組成物。Barium titanate 95.20-98.58% by weight, cerium oxide 0.52-1.50% by weight, niobium oxide 0.8%
5-3.00% by weight, magnesium oxide 0.05-0.
A high dielectric constant ceramic composition containing 35% by weight of niobium oxide and having a molar ratio of niobium oxide to magnesium oxide in the range of 1:0.4 to 1:2.2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59218533A JPS6199207A (en) | 1984-10-19 | 1984-10-19 | High-permeability porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59218533A JPS6199207A (en) | 1984-10-19 | 1984-10-19 | High-permeability porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6199207A true JPS6199207A (en) | 1986-05-17 |
JPH0510765B2 JPH0510765B2 (en) | 1993-02-10 |
Family
ID=16721414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59218533A Granted JPS6199207A (en) | 1984-10-19 | 1984-10-19 | High-permeability porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6199207A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0256405A1 (en) * | 1986-08-11 | 1988-02-24 | TDK Corporation | Semiconductive ceramic composition |
US5250481A (en) * | 1991-12-28 | 1993-10-05 | Samsung Electro-Mechanics Co., Ltd. | High dielectric ceramic composition |
-
1984
- 1984-10-19 JP JP59218533A patent/JPS6199207A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0256405A1 (en) * | 1986-08-11 | 1988-02-24 | TDK Corporation | Semiconductive ceramic composition |
US4861736A (en) * | 1986-08-11 | 1989-08-29 | Tdk Corporation | Semiconductive ceramic composition |
US5250481A (en) * | 1991-12-28 | 1993-10-05 | Samsung Electro-Mechanics Co., Ltd. | High dielectric ceramic composition |
Also Published As
Publication number | Publication date |
---|---|
JPH0510765B2 (en) | 1993-02-10 |
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