JPS6197864U - - Google Patents
Info
- Publication number
- JPS6197864U JPS6197864U JP18829785U JP18829785U JPS6197864U JP S6197864 U JPS6197864 U JP S6197864U JP 18829785 U JP18829785 U JP 18829785U JP 18829785 U JP18829785 U JP 18829785U JP S6197864 U JPS6197864 U JP S6197864U
- Authority
- JP
- Japan
- Prior art keywords
- region
- concentration
- carrier concentration
- deep level
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案の一実施態様を示す図、第２図
は、第１図の構造の素子の電荷密度分布を示す図
、第３図は第２図の電荷密度分布をもつた素子の
電圧−容量特性を示す図、第４図、第５図及び第
６図は本考案素子の機能を示す特性図である。な
お、図において、１０はｐ型半導体、１１は深い
準位を有するｎ型半導体、１２は低濃度のｎ型半
導体、１３は高濃度のｎ型半導体、１４はｎ型半
導体基板、１５及び１６は、電極、１７は受光面
をそれぞれ示す。
FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing the charge density distribution of an element having the structure shown in FIG. 1, and FIG. 3 is a diagram showing the charge density distribution of an element having the structure shown in FIG. 4, 5, and 6 are characteristic diagrams showing the functions of the device of the present invention. In the figure, 10 is a p-type semiconductor, 11 is an n-type semiconductor with a deep level, 12 is a low concentration n-type semiconductor, 13 is a high concentration n-type semiconductor, 14 is an n-type semiconductor substrate, 15 and 16 1 represents an electrode, and 17 represents a light-receiving surface, respectively.
Claims (1)
いて、接合面に近い順に、エネルギーレベルの浅
い不純物及び深い準位を有し、前記深い準位の濃
度が、前記エネルギーレベルの浅い不純物の濃度
と同程度かそれ以上であつて、前記深い準位の荷
電状態により、キヤリヤ濃度が、１ケタ程度かそ
れ以上変化しうる高濃度の深い準位を有する領域
１と、前記領域１に接し、前記領域１のキヤリヤ
濃度の最小値程度かそれ以下のキヤリヤ濃度を有
する領域２と、前記領域２に接し、前記領域２の
キヤリヤ濃度より１ケタ以上高いキヤリヤ濃度を
有する領域３の３領域を有し、前記領域１の一部
に光を入射しうる受光面を形成した可変容量半導
体受光素子。 On one side of the p-n junction (or Schottky junction), there is an impurity with a shallow energy level and a deep level in order of proximity to the junction surface, and the concentration of the deep level is about the same as the concentration of the impurity with a shallow energy level. A region 1 which is in contact with the region 1 and has a deep level with a high concentration and whose carrier concentration can change by about one digit or more depending on the charge state of the deep level; A region 2 having a carrier concentration of about or below the minimum value of the carrier concentration, and a region 3 adjacent to the region 2 and having a carrier concentration one or more orders of magnitude higher than the carrier concentration of the region 2, the region A variable capacitance semiconductor light-receiving element in which a light-receiving surface through which light can enter is formed in a part of the semiconductor light-receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18829785U JPS6138208Y2 (en) | 1985-12-05 | 1985-12-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18829785U JPS6138208Y2 (en) | 1985-12-05 | 1985-12-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6197864U true JPS6197864U (en) | 1986-06-23 |
| JPS6138208Y2 JPS6138208Y2 (en) | 1986-11-05 |
Family
ID=30745770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18829785U Expired JPS6138208Y2 (en) | 1985-12-05 | 1985-12-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6138208Y2 (en) |
-
1985
- 1985-12-05 JP JP18829785U patent/JPS6138208Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6138208Y2 (en) | 1986-11-05 |
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