JPS6197837A - Semiconductor etching device - Google Patents
Semiconductor etching deviceInfo
- Publication number
- JPS6197837A JPS6197837A JP22002884A JP22002884A JPS6197837A JP S6197837 A JPS6197837 A JP S6197837A JP 22002884 A JP22002884 A JP 22002884A JP 22002884 A JP22002884 A JP 22002884A JP S6197837 A JPS6197837 A JP S6197837A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- ammonia
- pressure
- ammonia water
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 28
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 43
- 229910021529 ammonia Inorganic materials 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体素子の製造工程において用いられる半導
体エツチング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor etching apparatus used in the manufacturing process of semiconductor devices.
従来例の構成とその問題点
近年、半導体素子の集積密度を上げるため半導体基板に
局所的な凹部を設は半導体基板を三次元的に利用するこ
とが重要視されておシ、ダイナミックメモリーやＶ溝形
ＭＯ８ＦＥＴなどに用いられている。シリコン基板を異
方性エツチングして凹部を形成するためにエチレンジア
ミ／やヒドラジンなどのエツチング液が知られているが
、アンモニア水はエツチングされた面の平坦さやエッチ
ピットなどの点で前者よシも優れている。Conventional configurations and their problems In recent years, in order to increase the integration density of semiconductor elements, it has become important to create local recesses in semiconductor substrates and use semiconductor substrates three-dimensionally. It is used in groove-type MO8FETs, etc. Etching solutions such as ethylene diamide and hydrazine are known for anisotropically etching a silicon substrate to form recesses, but ammonia water is better than the former in terms of flatness of the etched surface and etch pits. Are better.
以下、図面を参照しながら、上述したアンモニア水を用
いて半導体をエツチングする際のエツチング装置につい
て説明する。Hereinafter, an etching apparatus for etching a semiconductor using the above-mentioned ammonia water will be described with reference to the drawings.
第１図は従来の半導体エツチング装置の断面図を示すも
のである。第１図において１は局所的に窓あけのされた
二酸化シリコン膜を表面に有するシリコン基板、２はシ
リコン基板１を異方性エツチングするアンモニア水、３
はアンモニア水２を満したエツチング槽、４はアンモニ
ア水の温度を上げ一定温度に保つための電気ヒータ、６
は蒸発するアンモニアを補充するためのアンモニアガス
バブラー、６はシリコン基板を保持するラック、７はア
ンモニアガスを供給するガスボンベ、８は圧力調整器、
９はガス流量を調整する流量調整器である。FIG. 1 shows a cross-sectional view of a conventional semiconductor etching apparatus. In FIG. 1, 1 is a silicon substrate having a locally apertured silicon dioxide film on its surface, 2 is ammonia water for anisotropically etching the silicon substrate 1, and 3 is
is an etching tank filled with ammonia water 2, 4 is an electric heater to raise the temperature of the ammonia water and keep it at a constant temperature, 6
is an ammonia gas bubbler for replenishing evaporated ammonia; 6 is a rack that holds a silicon substrate; 7 is a gas cylinder that supplies ammonia gas; 8 is a pressure regulator;
9 is a flow rate regulator that adjusts the gas flow rate.
以上のように構成された半導体エツチング装置について
以下その動作を説明する。アンモニア水２が二酸化シリ
コン膜をエツチングする速度はンリコンに対するそれに
対して極めて小さいので、シリコン基板の露出している
部分だけ選択的にエツチングが進行しシリコン基板１の
面方位と二酸化／リコ／膜の開孔方向によって特有の方
位を有する工、チ／グ面を生じる。電気ヒータ４はアン
モニア水の温度を上げエツチング速度を高める働きをす
る。アンモニア水の温度を上げるとアンモニア水よりア
ンモニアガスの蒸発が激しくなりアンモニア濃度が低下
するためアンモニアガスバブラー５よりたえずアンモニ
アガスを補充しエツチング速度が低下しないようにして
いる。The operation of the semiconductor etching apparatus constructed as described above will be explained below. Since the rate at which ammonia water 2 etches the silicon dioxide film is extremely low compared to that of silicon dioxide, etching progresses selectively only on the exposed portions of the silicon substrate, and the surface orientation of the silicon substrate 1 and the carbon dioxide/lico/film etching speed progresses selectively. Depending on the direction of the hole opening, a machining/chip surface with a specific orientation is produced. The electric heater 4 serves to raise the temperature of the ammonia water and increase the etching rate. When the temperature of ammonia water is raised, ammonia gas evaporates more rapidly than ammonia water and the ammonia concentration decreases, so ammonia gas is constantly replenished from the ammonia gas bubbler 5 to prevent the etching rate from decreasing.
しかしながら上記のようなエツチング装置ではエツチン
グ速度が小さくアンモニア水温度を高めてもエツチング
速度はさほど大きくならないという欠点を有してい火。However, the etching apparatus described above has the disadvantage that the etching rate is low and even if the temperature of the ammonia water is increased, the etching rate does not increase significantly.
またたえずアンモニアガスを供給し続けなければならず
半導体素子のコスト高、排気処理方法などの問題点を有
していた。第１の欠点はアンモニア水温度が高いほどア
ンモニアの水に対する溶解度が減少しアンモニア濃度が
減少してしまうために生じる。このため（１００１面／
リコンに対する最大エツチング速度は約２００人／分で
あり、例えば３μｍの工、チ／グ陳さを得るには３時間
近い長時間の処理が必要であった。このためエツチング
速度が大きくまた大址のアンモニアガスを消費せずにす
む半導体エツチング装置が強く望まれていた。In addition, ammonia gas must be continuously supplied, resulting in problems such as high cost of semiconductor devices and exhaust treatment method. The first drawback arises because the higher the ammonia water temperature, the lower the solubility of ammonia in water and the lower the ammonia concentration. For this reason (page 1001/
The maximum etching speed for reconning is about 200 people/min, and a long process time of nearly 3 hours is required to obtain, for example, a 3 .mu.m etching/etching pattern. For this reason, there has been a strong desire for a semiconductor etching apparatus that has a high etching rate and does not require the consumption of a large amount of ammonia gas.
発明の目的
本発明は上記欠点に鑑み、アンモニア水を用いながら大
きなエツチング速度が得ら゛れ、かつわず〃≧のアンモ
ニアガスしか必要としない半導体エツチング装置を提供
するものである。OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a semiconductor etching apparatus which can obtain a high etching rate while using aqueous ammonia, and which requires only ammonia gas of ≧≧.
発明の構成
この目的を達成するために本発明の半導体エツチング装
置はガス導入口および圧力調節器を有する密閉エツチン
グ槽とそのエツチング槽に満たされたアンモニア水とア
ンモニア水温Ｋｔ一定に保つ温度調節器から４放されて
いる。この構成によって密閉エツチング僧門にアンモニ
アガスを導入して槽内の圧力を大気圧よりも高くするこ
とによってアンモニアの水に対する溶解度を高めアンモ
ニア濃度を増大させることができる。したがってエツチ
ング速度が増大し同じ量だけエツチングするために要す
る処理時間が短縮され、かつエツチング槽が密閉されて
いるので補充に要するアンモニアガスはわずかでよいこ
ととなる。Structure of the Invention To achieve this object, the semiconductor etching apparatus of the present invention includes a closed etching tank having a gas inlet and a pressure regulator, ammonia water filled in the etching tank, and a temperature regulator to keep the ammonia water temperature Kt constant. 4 is released. With this configuration, ammonia gas is introduced into the sealed etching gate to make the pressure inside the tank higher than atmospheric pressure, thereby increasing the solubility of ammonia in water and increasing the ammonia concentration. Therefore, the etching rate is increased, the processing time required to etch the same amount is shortened, and since the etching tank is sealed, only a small amount of ammonia gas is required for replenishment.
実施例の説明
以下本発明の一実施例について、図面を参照しながら説
明する。第２図は本発明の一実施例における半導体エツ
チング装置の断面図を示すものである。第２図において
、１は局所的に開孔した二酸化シリコン膜を有するシリ
コン基板、２はアンモニア水、３はアンモニア水の満た
されたエツチング槽、４は電気ヒータ、６は半導体基板
保持用ラック、了はアンモニアガスボンベ、８は圧力調
整器で以上は第１図の構成と同じものである。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 2 shows a sectional view of a semiconductor etching apparatus in one embodiment of the present invention. In FIG. 2, 1 is a silicon substrate having a locally opened silicon dioxide film, 2 is ammonia water, 3 is an etching tank filled with ammonia water, 4 is an electric heater, 6 is a rack for holding semiconductor substrates, Reference numeral is an ammonia gas cylinder, 8 is a pressure regulator, and the above structure is the same as that shown in Fig. 1.
１ｏはエツチング槽３との組み合わせで内部を密閉状態
にするためのふたである。1o is a lid that is used in combination with the etching bath 3 to seal the inside.
以上のように構成された半導体エツチング装置を用いた
シリコンのエツチングについて説明する。Etching of silicon using the semiconductor etching apparatus configured as described above will be explained.
本実施例ではエツチング槽が密閉されているのでアンモ
ニアガスポンベ７よシアンモニアガスを導入するとエツ
チング槽内部の圧力は圧力調整器８で決められる圧力に
高められる。アンモニアの水に対する溶解度は雰囲気圧
力によって変化し、圧力が高いほどアンモニア濃度は増
大する。本実施例のアンモニア温度が９０℃の場合従来
例（圧力１ａｔｍ ）で２．９チであったアンモニア濃
度が圧力を２ ａｔｍにすることで１０．０％、４ ａ
ｔｍでは１９４％と大幅に増大する。したがって（１０
０３面シリコンに対するエツチング速度および３μｍの
エツチングに要する処理時間は表のようになり従来例に
比べ本実施例では大幅な処理時間の短縮が達成された。In this embodiment, the etching tank is sealed, so when cyanmonia gas is introduced from the ammonia gas pump 7, the pressure inside the etching tank is increased to a pressure determined by the pressure regulator 8. The solubility of ammonia in water changes depending on the atmospheric pressure, and the higher the pressure, the higher the ammonia concentration. When the ammonia temperature in this example is 90°C, the ammonia concentration, which was 2.9 in the conventional example (pressure 1 atm), becomes 10.0% by increasing the pressure to 2 atm, 4 a
In tm, it increases significantly to 194%. Therefore (10
The etching speed for 03-plane silicon and the processing time required for etching of 3 μm are shown in the table, and a significant reduction in processing time was achieved in this example compared to the conventional example.
表
以上のように本実施例によれば、アンモニア水が満たさ
れたガス導入口のついた密閉エツチング槽とガス導入口
に接続された圧力調整器とアンモニア水温度を制御する
温度調節器からエツチング装置を構成することによシ、
エツチング速度を大きくすることができ処理時間を短縮
することができる。As shown in the table above, according to this embodiment, etching is performed using a sealed etching tank with a gas inlet filled with ammonia water, a pressure regulator connected to the gas inlet, and a temperature regulator that controls the temperature of the ammonia water. By configuring the device,
Etching speed can be increased and processing time can be shortened.
なお本実施例ではエツチング槽を密閉構造にしガス導入
口を設けたが、ガス導入口のついた密閉容器内にエツチ
ング槽を設置した構造でもよい。In this embodiment, the etching tank is of a closed structure and provided with a gas inlet, but the etching tank may be placed in a closed container with a gas inlet.
発明の効果
以上のように本発明はアンモニア水が満たされガス導入
口のついた密閉エツチング槽とエツチング槽に接続され
た圧力調整器と温度調整器から構成されることにより、
エツチング速度の大きいエツチングができエツチングに
要する処理時間を短縮できるため処理能力の大きい半導
体エツチング装置としてその実用的効果は大なるものが
ある。Effects of the Invention As described above, the present invention comprises a sealed etching tank filled with ammonia water and equipped with a gas inlet, and a pressure regulator and a temperature regulator connected to the etching tank.
Since etching can be performed at a high etching speed and the processing time required for etching can be shortened, it has a great practical effect as a semiconductor etching apparatus with a large processing capacity.
第１図は従来のアンモニア水を用いた半導体エツチング
装置の構造断面図、第２図は本発明の一実施例における
アンモニア水を用いた半導体エツチング装置の構造断面
図である。
１・・・・・・局所的に開孔した二酸化シリコン膜を有
スルシリコン基板、２・・・・アンモニア水、３・・・
・・・エツチング槽、４・・・・・電気ヒータ、６・・
・・・・アンモニアガスバブラー、６・・・・・ラック
、７・・・・・・アンモニアガスボ／べ、８・・・・・
・圧力調整器、９・・・・・ガス流量調整器、１ｏ・・
・・・エツチング槽ふた。FIG. 1 is a structural cross-sectional view of a conventional semiconductor etching apparatus using ammonia water, and FIG. 2 is a structural cross-sectional view of a semiconductor etching apparatus using ammonia water according to an embodiment of the present invention. 1...Silicon substrate with locally opened silicon dioxide film, 2...Ammonia water, 3...
...Etching bath, 4...Electric heater, 6...
...Ammonia gas bubbler, 6...Rack, 7...Ammonia gas bottle/vehicle, 8...
・Pressure regulator, 9...Gas flow regulator, 1o...
...Etching tank lid.
Claims (1)
器を有する密閉エッチング槽と、前記アンモニア水の温
度を一定にする温度調節器をそなえたことを特徴とする
半導体エッチング装置。A semiconductor etching apparatus comprising: a closed etching tank filled with ammonia water and having a gas inlet and a pressure regulator; and a temperature regulator that keeps the temperature of the ammonia water constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22002884A JPS6197837A (en) | 1984-10-18 | 1984-10-18 | Semiconductor etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22002884A JPS6197837A (en) | 1984-10-18 | 1984-10-18 | Semiconductor etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197837A true JPS6197837A (en) | 1986-05-16 |
Family
ID=16744798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22002884A Pending JPS6197837A (en) | 1984-10-18 | 1984-10-18 | Semiconductor etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197837A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498051B1 (en) | 1999-01-27 | 2002-12-24 | Citizen Watch Co., Ltd. | Method of packaging semiconductor device using anisotropic conductive adhesive |
| US20130012028A1 (en) * | 2011-07-08 | 2013-01-10 | Alvin Gabriel Stern | High purity, environmentally clean method and apparatus, for high rate, liquid anisotropic etching of single crystal silicon or etching of polycrystalline silicon, using an overpressure of ammonia gas above aqueous ammonium hydroxide |
-
1984
- 1984-10-18 JP JP22002884A patent/JPS6197837A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498051B1 (en) | 1999-01-27 | 2002-12-24 | Citizen Watch Co., Ltd. | Method of packaging semiconductor device using anisotropic conductive adhesive |
| US20130012028A1 (en) * | 2011-07-08 | 2013-01-10 | Alvin Gabriel Stern | High purity, environmentally clean method and apparatus, for high rate, liquid anisotropic etching of single crystal silicon or etching of polycrystalline silicon, using an overpressure of ammonia gas above aqueous ammonium hydroxide |
| US8790531B2 (en) * | 2011-07-08 | 2014-07-29 | Alvin Gabriel Stern | High purity, environmentally clean method and apparatus, for high rate, liquid anisotropic etching of single crystal silicon or etching of polycrystalline silicon, using an overpressure of ammonia gas above aqueous ammonium hydroxide |
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