CN105448816B - Pre-wetting method of semiconductor substrate - Google Patents
Pre-wetting method of semiconductor substrate Download PDFInfo
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- CN105448816B CN105448816B CN201410512510.7A CN201410512510A CN105448816B CN 105448816 B CN105448816 B CN 105448816B CN 201410512510 A CN201410512510 A CN 201410512510A CN 105448816 B CN105448816 B CN 105448816B
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Abstract
The invention relates to a pre-wetting process of a semiconductor substrate in a TSV (through silicon via) process. The invention discloses a prewetting method of a semiconductor substrate, wherein the substrate is subjected to prewetting treatment through a prewetting cavity, and the prewetting method comprises the following steps: placing a substrate to be wetted in a pre-wetting cavity; step two, vacuumizing the pre-wetting cavity to reach a vacuum state; step three: introducing soluble gas into the pre-wetting cavity in a vacuum state, and monitoring the pressure change in the pre-wetting cavity; step four, when the air pressure in the pre-wetting cavity reaches a desired threshold range, filling liquid is injected into the pre-wetting cavity; dissolving soluble gas in the filling liquid, wetting the filling liquid and infiltrating the substrate; and step six, enabling the pre-wetting cavity to be recovered to a normal pressure state, and finishing pre-wetting treatment. The method can ensure that the filling liquid can penetrate into the bottom of the deep hole on the surface of the substrate, thereby greatly improving the pre-wetting effect.
Description
Technical Field
The invention relates to the field of semiconductor production and manufacturing, in particular to a pre-wetting process for performing pre-wetting treatment on a semiconductor substrate in a TSV (through silicon Via) process.
Background
The semiconductor industry has been developing rapidly, especially in recent years. The Ultra Large Scale Integrated Circuit (ULSIC) manufacturing industry has followed moore's law, doubling the degree of integration every 1.5 years. As device dimensions shrink to around 60nm, manufacturers of semiconductor substrates have encountered troublesome technical problems, such as: too thin gate oxide thickness is approaching physical limits, higher leakage current affects device performance, insufficient carrier mobility reduces device speed, etc. With the success of these problems, practitioners in the art have also searched out solutions with great degree of intelligence, and new technologies such as strain engineering, High-k Gate, laser annealing, etc. are also in use, which also includes the TSV technology with great significance.
The three-dimensional stacked integrated circuit packaging technology (3D IC) based on the through-silicon via (TSV) technology is the latest packaging technology at present, and has the advantages of minimum size and quality, effective reduction of parasitic effect, improvement of chip speed, reduction of power consumption, and the like. The TSV technology is the latest technology for realizing interconnection between chips by making vertical conduction between the chips, and as an alternative technology of wire bonding, the TSV technology forms a through hole structure penetrating through a silicon wafer, which can greatly shorten the interconnection distance, thereby eliminating the limitation on the number of chip stacks. So that the three-dimensional lamination of the chip can be applied in wider fields.
The existing silicon through hole uses metal copper as a metal layer, and the front surface process of the copper metal layer mainly comprises the following steps of a copper seed layer PVD process, a copper film electroplating process, an annealing process and a CMP planarization process. Because of the large aspect ratio of vias in TSV technology, the ratio of the depth to the width is generally from 5: 1 to 10: 1, even 20: 1. the diameter of the small hole with the large depth-to-width ratio can cause that the deep hole cannot be completely filled by pre-wetting in the copper plating process, and the deep hole is filled by electroplating liquid in the subsequent electroplating process, so that the substrate fails.
Disclosure of Invention
The defects of the prior art limit the further development of the industry to a great extent, the card shell of a manufacturer in the process can make the competitive situation more severe, and the technical scheme provided by the invention can effectively fill the small holes with the pre-wetting solution, thereby providing conditions for the subsequent full affinity with the electroplating solution.
In order to achieve the above object, the present invention provides a pre-wetting method, which is specifically characterized as follows:
a method for prewetting a semiconductor substrate, wherein the substrate is subjected to prewetting treatment through a prewetting cavity, the method comprising the following steps of:
the method comprises the following steps: placing a substrate to be wetted in a pre-wetting cavity;
step two: vacuumizing the pre-wetting cavity to reach a vacuum state;
step three: under the vacuum state, introducing soluble gas into the pre-wetting cavity, and monitoring the pressure change in the pre-wetting cavity;
step four: when the air pressure in the pre-wetting cavity reaches a desired threshold interval, filling liquid is injected into the pre-wetting cavity;
step five: the soluble gas is dissolved in the filling liquid, and the filling liquid wets and soaks the substrate;
step six: and recovering the pre-wetting cavity to a normal pressure state to finish the pre-wetting treatment.
Preferably, between the step five and the step six, the method further comprises the following steps: increasing the gas pressure within the pre-wetting chamber to increase the solubility of the soluble gas.
Optionally, the gas pressure in the pre-wetting chamber is increased by introducing a poorly soluble gas into the pre-wetting chamber or by mechanical pressing.
Furthermore, the filling liquid is water or deionized water, and the filling liquid wets and soaks the substrate in a spraying, fog wetting, immersing or pouring mode.
Further, the soluble gas is a gas having a solubility in water of 0.1mol/L or more in a gas standard state, and the soluble gas is a rare gas or carbon dioxide.
Optionally, the sparingly soluble gas comprises nitrogen, oxygen or hydrogen.
Further, the vacuum state is a state in which the air pressure in the pre-wetting chamber is 2torr or less.
Further, the desired threshold interval is in a range of 5torr or more in pressure.
Further, a temperature sensor and an air pressure sensor are arranged in the pre-wetting cavity and used for quantitatively sensing and transmitting temperature data and air pressure data in the process environment.
Furthermore, a temperature control device and an air pressure control device are arranged outside or inside the pre-wetting cavity, and the temperature control device is connected with the temperature sensor and used for carrying out feedback regulation on the temperature in the pre-wetting cavity; the air pressure control device is connected with the air pressure sensor and used for carrying out feedback regulation on the air pressure in the pre-wetting cavity; the feedback regulation maintains the fill fluid in a liquid phase during pre-wet processing and increases the solubility of the soluble gas.
The invention has the advantages that the technical scheme of filling soluble gas can be adopted under the condition of not greatly changing the prior pre-wetting equipment, so that the semiconductor substrate is subjected to pre-wetting treatment by simpler process steps, and the outstanding improvement effect is achieved.
Drawings
FIG. 1 is a simplified schematic diagram of a pre-wetting apparatus according to a first embodiment of the method of the present invention;
FIG. 2 is a block diagram of the steps of a first embodiment of the method of the present invention;
FIG. 3 is a schematic view of the structure of a substrate to be wetted in a first embodiment of the method according to the invention;
FIG. 4 is a microscopic view of the deep hole of the substrate filled with a soluble gas in the first embodiment of the method of the present invention;
FIG. 5 is a microscopic view of the substrate incompletely wetted by the fill fluid in a first embodiment of the method of the invention;
FIG. 6 is a schematic microscopic view of the pre-wetting chamber filled with a sparingly soluble gas according to the first embodiment of the method of the present invention;
FIG. 7 is a microscopic view of the substrate being fully wetted in a first embodiment of the method of the present invention;
FIG. 8 is a simplified schematic diagram of a pre-wetting apparatus according to a second embodiment of the method of the present invention;
FIG. 9 is a microscopic view of a substrate being wetted in a second embodiment of the method of the present invention.
Detailed Description
The technical solutions provided by the present invention will be further described in detail with reference to the accompanying drawings and the detailed description. The advantages and features of the present invention will become more fully apparent from the following detailed description when taken in conjunction with the accompanying claims. It is to be noted that the drawings are in a simplified form, and some non-critical elements are omitted in the drawings, so that the understanding and comprehension of the invention are not affected:
fig. 1 is a simplified schematic diagram of the apparatus involved in the practice of the present invention, and is also a pre-wetting apparatus commonly used in the industry. The apparatus comprises a pre-wet chamber 101, wherein a clamp 103 for placing and holding the substrate 102 is arranged in the pre-wet chamber 101, and the clamp 103 is preferably designed to be rotatable, which facilitates a faster and more uniform wetting of the substrate 102. However, the rotation speed of the clamp 103 is not too high, and is preferably controlled below 100RPM, so as to avoid that all water is thrown off and the pre-wetting is not complete. Also, to enable the filling liquid to enter the pre-wetting chamber 101, the pre-wetting apparatus is further provided with a liquid delivery head 104. Depending on the pre-wetting process, the infusion head 104 may also operate differently, for example, if it is an immersion pre-wetting, the infusion head 104 may only need to be a conventional faucet-like device to deliver the fill fluid into the pre-wetting chamber 101 until the substrate 102 is completely submerged; if the substrate 102 is pre-wetted by spraying, the delivery head 104 needs to be designed like a shower head, and the liquid is preferably uniform from place to achieve good pre-wetting. In general, the manner in which the fill fluid wets and wets the substrate 102 may include spraying, misting, immersing, or pouring, among others. In order to control the air pressure and temperature in the pre-wetting chamber 101, the pre-wetting chamber 101 should be further equipped with a temperature control device 106 and an air pressure control device 108, wherein the air pressure control device 108 is connected to the discharge port 107 of the pre-wetting chamber 101 to evacuate or inflate the pre-wetting chamber 101. The air pressure control device 108 and the temperature control device 106 can perform feedback adjustment on the process environment in the pre-wetting chamber 101, and are respectively connected with an air pressure sensor and a temperature sensor, which are not shown in the figure, for transmitting data and issuing an adjustment instruction for feedback adjustment. The temperature sensor and the air pressure sensor can accurately monitor the air pressure and the temperature parameters in the pre-wetting cavity 101, give corresponding specific numerical values and quantitatively reflect the process environment in the pre-wetting cavity 101. The pre-wet chamber 101 should also be left with an access opening 105 for accessing the substrate 102.
Fig. 2 is a block diagram of the steps of the first embodiment of the present invention. The following first embodiment is given in conjunction with fig. 1 and 2:
a method for pre-wetting a semiconductor substrate, wherein the substrate 102 is pre-wetted by a pre-wetting chamber 101, comprising the steps of:
the method comprises the following steps: putting a substrate 102 to be wetted into a pre-wetting cavity 101 through an inlet and outlet 105, fixedly placing the substrate on a clamp 103, adjusting and maintaining the temperature in the pre-wetting cavity 101 at about 5 ℃ by a sensor and a temperature control device 106, wherein the pre-wetting cavity 101 provides a required process environment for a pre-wetting process;
step two: the inside of the pre-wetting cavity 101 is vacuumized by the air pressure control device 108 through the discharge port 107, so that the pre-wetting cavity 101 reaches a vacuum state under a corresponding process environment, for example, the air pressure value in the pre-wetting cavity 101 can be in a state of 1.5torr, and the air pressure change in the pre-wetting cavity 101 can also be monitored in real time by an air pressure sensor at the moment;
step three: introducing a soluble gas, such as xenon, into the pre-wetting chamber 101, and monitoring the pressure change in the pre-wetting chamber 101;
step four: when the air pressure in the pre-wet chamber 101 gradually increases and reaches a range of a desired threshold interval, for example, when the air pressure in the pre-wet chamber 101 increases to about 6torr, the filling liquid, i.e., DIW (deionized water), is continuously injected by the liquid delivery head 104, and the substrate 102 is driven by the clamp 103 to rotate at a speed of 50 RPM;
step five: the soluble gas Xe in the pre-wet chamber 101 is dissolved in the filling liquid DIW, the substrate 102 is completely immersed in the DIW, the substrate 102 is wetted by the DIW, and the clamp 103 can stop rotating;
step six: the inside of the pre-wetting chamber 101 is filled with a poorly soluble gas, such as nitrogen gas, to increase the pressure inside the pre-wetting chamber 101, thereby increasing the Xe solubility,
step seven: the air pressure in the pre-wetting chamber 101 is returned to normal pressure, and the pre-wetting treatment is ended.
The substrate 102 may then be removed.
During the above process, it is necessary to control the temperature in the chamber by the temperature sensor and the temperature control device 106 provided in the pre-wetting chamber 101 to ensure that the filling liquid, i.e. water or DIW, is always in the liquid phase. The temperature in the chamber is preferably maintained at about 5 c, preferably not below 5 c, otherwise the filling liquid may solidify and freeze during the subsequent pressure adjustment.
Since the first embodiment employs a general immersion pre-wetting method, there is no special requirement for the delivery head 104, and it is only necessary to directly pour the DIW onto the substrate 102 through the delivery head 104, the substrate 102 rotates at a low speed along with the clamp 103, and the DIW is spread and uniformly coated on the surface of the substrate 102, and finally, the DIW completely immerses the substrate 102 for pre-wetting.
In step six of this embodiment, the method of increasing the air pressure in the pre-wetting chamber 101 is not limited to the method of introducing the poorly soluble gas, but may be realized by a mechanical pressing method, and for example, the pre-wetting chamber 101 may be designed to have a piston, and the pressure in the pre-wetting chamber 101 may be increased by pushing the piston, thereby promoting the dissolution of Xe. However, the air tightness of the pre-wetting chamber 101 is very high by means of mechanical pressure, which requires complex design and is not very precise to control, so that this solution is not as easy to implement as the introduction of the insoluble gas.
The various states traversed by the invention in the first embodiment and the working principle of the invention will be further explained below with reference to fig. 3 to 7:
fig. 3 shows the microstructure of the substrate 102, the recess 301 being exaggerated for the sake of representation. In the TSV field, it is well known that the seemingly flat substrate 102 actually has a large number of recesses 301 for connecting lines, and in these μm-level recesses 301, the space is occupied by air, and when the substrate 102 is subjected to pre-wetting treatment by a conventional process, water or DIW as a filling liquid can wet only the surface and the peripheral positions of the substrate 102; if the process is more sophisticated, it will at best only end up slightly entering a short section of the recess 301, and in any case will not reach the recess 301 completely, resulting in incomplete pre-wetting of the substrate 102.
In order to solve the problem, the scheme provided by the invention is that the pre-wetting cavity 101 is vacuumized, most of air is exhausted, then the soluble gas is introduced into the pre-wetting cavity, the space in the original deep hole 301 is occupied by the soluble gas, then the filling liquid is introduced into the pre-wetting cavity 101 to dissolve the soluble gas, and the filling liquid can completely enter the deep hole 301 of the substrate 102, so that the purpose of full pre-wetting is achieved. The reason why the soluble gas is introduced is that the air in the deep hole 301 cannot be completely expelled by simply vacuumizing, and a part of air always remains in the deep hole 301 to cause incomplete pre-wetting; after the soluble gas is introduced, the displacement effect of the soluble gas can catch up or dilute the air in the deep hole 301, so that the pre-wetting effect is effectively improved, and the beneficial effect is finally reflected to the improvement of the yield of the product.
Further, the gas pressure in the pre-wetting chamber 101 can be increased by applying external intervention, so as to improve the solubility of the soluble gas, which helps the pre-wetting process to be performed faster and better. However, whether external intervention is applied or not is optional because, if the soluble gas is selected appropriately, it has a high solubility per se, for example, the solubility of Xe in the first embodiment in water can reach 110.9mol/L under a standard state, that is, 1L of water can dissolve 110.9mol of Xe, in which case the external intervention is not applied and a natural solution is fully possible. Even if the solubility of the soluble gas is slightly low, the soluble gas can be completely dissolved in the filling liquid by prolonging the pre-wetting time, and the purpose of pre-wetting can be achieved. However, the solubility of the soluble gas in the standard state should be at least 0.1mol/L, otherwise the pre-wetting effect is difficult or impossible to achieve; the soluble gas is preferably selected from rare gases such as helium, neon, argon, krypton, etc. because these gases have very high solubility and do not react with water.
Alternatively, if it is decided to apply external intervention to increase the solubility of the soluble gas, the means of introducing the sparingly soluble gas is relatively superior to the means of mechanical compression. The advantages are three: 1. the air pressure of the pre-wetting chamber 101 is more easily and accurately controlled; 2. the requirements on the airtightness of the equipment and the pre-wetting chamber 101 are not so strict; 3. after the mechanical pressing is finished, it is still necessary to ventilate the inside of the pre-wetting chamber 101 to return the chamber to normal pressure, and the gas pressure inside the pre-wetting chamber 101 can be directly increased to normal pressure by introducing the insoluble gas.
Fig. 4 shows the first embodiment in which the inside of the pre-wet chamber 101 is evacuated to a vacuum state with a pressure of 1.5torr and then filled with Xe gas. The shaded portion with black dots in FIG. 4 indicates the incoming Xe 401. Since most of the air in the pre-wet chamber 101 is pumped out, after the pre-wet chamber 101 is filled with the Xe401, the deep hole 301 of the substrate 102 is easily almost completely occupied by the incoming Xe401, and is ready for the subsequent pre-wetting.
Fig. 5 shows the case where the DIW501 immersed substrate 102 is poured into the pre-wet chamber 101 when Xe401 is continuously introduced into the pre-wet chamber 101 until the pressure in the chamber reaches 6 torr. After the processes of vacuumizing and introducing the Xe401, when the air pressure in the pre-wetting chamber 101 reaches within the desired threshold interval, it can be basically considered that the Xe401 is enough to completely occupy the deep hole 301 of the substrate 102, and then the filling liquid can be injected into the pre-wetting chamber 101. The desired threshold interval is within an interval of approximately 5torr and 5torr or more. In the first embodiment, the DIW501 is poured into the pre-wetting chamber 101 at a time point when the pressure in the pre-wetting chamber 101 reaches 6 torr. At the same time, the substrate 102 is rotated at a low speed with the chuck 103 at 50RPM to spread the DIW501 more quickly and uniformly over the surface of the substrate 102. In fig. 5, DIW501 is shown gradually penetrating deep hole 301 of substrate 102, dissolving Xe401 located within deep hole 301.
In fig. 6, the pre-wetting chamber 101 is pressurized with a poorly soluble gas to promote Xe401 dissolution. When the poured DIW501 has completely submerged the substrate 102, the rotation of the clamp 103 may be stopped. At this time, if it is desired to allow DIW501 to reach the bottom of deep hole 301 as quickly as possible to achieve a complete pre-wetting effect, nitrogen 601 may be introduced. The hatched portion indicated by oblique lines in the drawing is DIW501, and the hatched portion indicated by a grid indicates nitrogen 601. Since the volume of the pre-wetting chamber 101 is generally fixed, when the nitrogen gas 601 is continuously filled into the pre-wetting chamber 101 filled with the Xe401, the gas pressure in the pre-wetting chamber 101 increases, and it can be known from the relationship between the gas solubility and the gas pressure that the solubility of the Xe401 increases, thereby increasing the pre-wetting speed. In addition, the increase in gas pressure also acts to compress the Xe401, and in conclusion the introduction of nitrogen 601 helps to complete the pre-wetting process faster and better.
Shown in fig. 7 is the process in which deep hole DIW501 reaches the bottom of deep hole 301 and substrate 102 is fully pre-wetted. Since the step of pressurizing by introducing the nitrogen gas 601 is employed in the first embodiment, after the pressurization is continued, the Xe401 in the deep hole 301 is sufficiently dissolved in the DIW501 at a fast rate, and the space originally occupied by the Xe401 in the deep hole 301 is naturally replaced by the DIW501, so that the entire substrate 102 is sufficiently pre-wet-treated. Meanwhile, after the pre-wetting process is finished, the air pressure in the pre-wetting chamber 101 needs to be restored to the normal pressure, so that the nitrogen 601 can be directly introduced until the air pressure in the pre-wetting chamber 101 is the same as the air pressure outside the pre-wetting chamber 101, that is, the chamber is restored to the normal pressure state, thereby not only achieving the purpose of increasing the air pressure in the pre-wetting chamber 101, but also directly opening the pre-wetting chamber 101 after the pre-wetting process is finished and taking away the substrate 102.
Next, a second embodiment of the present invention will be described with reference to fig. 8 and 9:
fig. 8 shows a pre-wetting apparatus according to a second embodiment, which also includes a pre-wetting chamber 801, and a clamp 803 is provided in the pre-wetting chamber 801 for supporting and fixing a substrate 802. The clamp 803 cannot be rotated nor is it required. A liquid delivery head 804 is provided at a central position above the pre-wetting chamber 801 for delivering a filling liquid, more specifically, purified water 808, into the pre-wetting chamber 801. The delivery head 804 is an ultrasonically vibrating nozzle capable of atomizing water 808 as a fill fluid, delivering the water 808 to the surface 801 of the substrate 802 uniformly and continuously in a manner similar to an air humidifier, and eventually wetting the substrate 802 as the water 808 continues to accumulate. The pre-wetting chamber 801 is also provided with a vent 806 above for air suction and ventilation. An air pressure control device 807 is connected to the end of the discharge port 806 to adjust the air pressure of the pre-wetting chamber 801. The air pressure sensor installed in the pre-wetting chamber 801 is not shown, and the air pressure sensor is connected with the air pressure control device 807 for feeding back and adjusting the air pressure control device 807. Pre-wet chamber 801 is left with access 805 for substrate 802 to and from. Since the temperature of the external environment of the second embodiment can be adjusted, the pre-wetting chamber 801 itself is not equipped with a temperature control device and a temperature sensor, for example, the pre-wetting chamber 801 can be placed in an external environment of 5 ℃, and then the air pressure in the pre-wetting chamber 801 is controlled, so long as the water 808 is always in a liquid phase state, that is, the pre-wetting process is not affected.
In a second embodiment, the soluble gas selected is carbon dioxide. Fig. 9 shows a microscopic view of the gradual dissolution of carbon dioxide 901 in the deep pores of the substrate 802 by water 808 in the second embodiment. The reason for the selection of carbon dioxide 901 is that because of its relatively high solubility, 1g of water can dissolve 1.79 cubic centimeters of carbon dioxide in the standard state of the gas, which is sufficient for the purposes of the present invention. In addition, although the carbon dioxide 901 is partially reacted with the water 808 to generate carbonic acid, the carbon dioxide 901 is not so much affected by the plating liquid in the subsequent process after the end of the pre-wetting process, and thus the carbon dioxide 901 is optional. However, it is preferable to select a more stable noble gas if possible.
Since the solubility of the carbon dioxide 901 is smaller than that of the Xe401 in the first embodiment, and no external intervention is performed to pressurize the pre-wetting chamber 801 filled with the carbon dioxide 901 and the water 808 in the second embodiment, the pre-wetting process takes a longer time than the first embodiment.
The specific process of the second embodiment can be described as follows:
a method for pre-wetting a semiconductor substrate, wherein the substrate 802 is pre-wetted by a pre-wetting chamber 801, comprising the steps of:
the method comprises the following steps: putting a substrate 802 to be wetted into a pre-wetting cavity 801 through an inlet and an outlet 805, and fixedly placing the substrate on a clamp 803, wherein the pre-wetting cavity 801 provides a required process environment for a pre-wetting process;
step two: the inside of the pre-wetting cavity 801 is vacuumized through a discharge port 806 by an air pressure control device 807, and the air pressure change in the pre-wetting cavity 801 is monitored in real time through an air pressure sensor;
step three: when the pre-wetting cavity 801 reaches a vacuum state in a corresponding process environment, for example, the pressure in the pre-wetting cavity 801 may be 2torr, a soluble gas, for example, carbon dioxide 901, is introduced into the pre-wetting cavity 801, and the pressure change in the pre-wetting cavity 801 is continuously monitored;
step four: when the air pressure in the pre-wetting cavity 801 gradually rises and reaches the range of the expected threshold interval, for example, the air pressure in the pre-wetting cavity 801 rises to about 8torr, the infusion head 804 continuously injects the filling liquid, that is, the water 808;
step five: carbon dioxide 901 in the pre-wetting cavity 801 is dissolved in water 808, the water 808 completely wets the substrate 802 and forms a water layer on the surface of the substrate 802, and the substrate 802 is wetted;
step six: the air pressure in the pre-wetting chamber 801 is returned to normal pressure, the pre-wetting process is ended, and the substrate 802 is taken out.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A pre-wetting method of a semiconductor substrate based on a through hole of a silicon wafer is characterized in that the substrate is subjected to pre-wetting treatment through a pre-wetting cavity, and the method comprises the following steps:
the method comprises the following steps: placing a substrate to be wetted in a pre-wetting cavity;
step two: vacuumizing the pre-wetting cavity to reach a vacuum state;
step three: under the vacuum state, introducing soluble gas into the pre-wetting cavity, and monitoring the pressure change in the pre-wetting cavity;
step four: when the air pressure in the pre-wetting cavity reaches a desired threshold interval, filling liquid is injected into the pre-wetting cavity;
step five: the soluble gas is dissolved in the filling liquid, and the filling liquid wets and soaks the substrate;
step six: and recovering the pre-wetting cavity to a normal pressure state to finish the pre-wetting treatment.
2. The method of prewetting of claim 1, wherein between said step five and said step six, further comprising: increasing the gas pressure within the pre-wetting chamber to increase the solubility of the soluble gas.
3. The method of prewetting according to claim 2, wherein the gas pressure in the prewetting chamber is increased by feeding a gas with a poor solubility or by mechanical pressing.
4. The method of claim 1, wherein the filling liquid is water or deionized water, and the filling liquid wets and wets the substrate by spraying, misting, immersing or pouring.
5. The prewetting method according to claim 1, wherein the soluble gas is a gas having a solubility in water of 0.1mol/L or more in a gas standard state, and the soluble gas is a rare gas or carbon dioxide.
6. The method of claim 3, wherein said poorly soluble gas comprises nitrogen, oxygen, or hydrogen.
7. The method of claim 1, wherein the vacuum state is a state in which an air pressure in the pre-wetting chamber is below 2 torr.
8. The method of claim 1, wherein the desired threshold interval is in a range of 5torr and above.
9. The pre-wetting method according to claim 1, wherein a temperature sensor and an air pressure sensor are disposed in the pre-wetting chamber for quantitatively sensing and transmitting temperature data and air pressure data within a process environment provided by the pre-wetting chamber.
10. The pre-wetting method according to claim 9, wherein a temperature control device and an air pressure control device are arranged outside or inside the pre-wetting chamber, the temperature control device is connected with the temperature sensor, and the temperature in the pre-wetting chamber is subjected to feedback regulation; the air pressure control device is connected with the air pressure sensor and used for carrying out feedback regulation on the air pressure in the pre-wetting cavity; the feedback regulation maintains the fill fluid in a liquid phase during pre-wet processing and increases the solubility of the soluble gas.
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| CN102486618A (en) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Method for development of water-resistant surface coating-free immersed photoresist |
| CN103474379A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | Wafer holding device in vacuum prewet cavity |
| CN103474378A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | Vacuum pre-wetting device and vacuumizing pre-wetting method based on TSV manufacture procedure |
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