JPS619744B2 - - Google Patents

Info

Publication number
JPS619744B2
JPS619744B2 JP53012411A JP1241178A JPS619744B2 JP S619744 B2 JPS619744 B2 JP S619744B2 JP 53012411 A JP53012411 A JP 53012411A JP 1241178 A JP1241178 A JP 1241178A JP S619744 B2 JPS619744 B2 JP S619744B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53012411A
Other languages
Japanese (ja)
Other versions
JPS54105977A (en
Inventor
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1241178A priority Critical patent/JPS54105977A/ja
Publication of JPS54105977A publication Critical patent/JPS54105977A/ja
Publication of JPS619744B2 publication Critical patent/JPS619744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/111Field plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP1241178A 1978-02-08 1978-02-08 Semiconductor device Granted JPS54105977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1241178A JPS54105977A (en) 1978-02-08 1978-02-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1241178A JPS54105977A (en) 1978-02-08 1978-02-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54105977A JPS54105977A (en) 1979-08-20
JPS619744B2 true JPS619744B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-03-25

Family

ID=11804510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1241178A Granted JPS54105977A (en) 1978-02-08 1978-02-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54105977A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123161A (en) * 1979-03-16 1980-09-22 Nec Corp Darlington-connection semiconductor device
JPS57102065A (en) * 1980-12-16 1982-06-24 Mitsubishi Electric Corp Semiconductor device
JPS57148369A (en) * 1981-03-09 1982-09-13 Toshiba Corp Composite semiconductor device
JPS57162462A (en) * 1981-03-31 1982-10-06 Toshiba Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPH04218955A (ja) * 1990-12-19 1992-08-10 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPS54105977A (en) 1979-08-20

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